Data Storage Applications Research Articles

Measuring the magnetic topological spin structure of light using an anapole probe

Topological spin structures of light, including the Skyrmion, Meron, and bi-Meron, are intriguing optical phenomena that arise from spin–orbit coupling. They have promising potential applications in nano-metrology, data storage, super-resolved imaging and chiral detection. Aside from the electric part of optical spin, of equal importance is the magnetic part, particularly the H-type electromagnetic modes for which the spin topological properties of the field are dominated by the magnetic field. However, their observation and measurement remains absent and faces difficult challenges. Here, we design a unique type of anapole probe to measure specifically the photonic spin structures dominated by magnetic fields. The probe is composed of an Ag-core and Si-shell nanosphere, which manifests as a pure magnetic dipole with no electric response. The effectiveness of the method was validated by characterizing the magnetic field distributions of various focused vector beams. It was subsequently employed to measure the magnetic topological spin structures, including individual Skyrmions and Meron/Skyrmion lattices for the first time. The proposed method may be a powerful tool to characterize the magnetic properties of optical spin and valuable in advancing spin photonics.

Linear charging-discharging of an ultralong UVA persistent phosphor for advanced optical data storage and wide-wavelength-range detector

Ultraviolet persistent luminescence (UV PersL) phosphor is currently gaining considerable attention due to its promising potential for widespread advanced applications. However, the linear manipulation of electron charging-discharging and the prolongation of persistent time remains a huge challenge. Here, we report a novel Bi3+ doped Mg2GeO4 UVA PersL phosphor via a nonequivalent substitution strategy. The UVA PersL performance of Mg2GeO4:Bi3+ is significantly improved by introducing Li+ ions, yielding a superior UVA PersL property with afterglow lasting time beyond 100 h. The trap distribution management and the captured electron motion dynamics are revealed by the thermoluminescence technique under various external stimuli. Moreover, UVA PersL can be repeatedly rejuvenated by NIR and blue LED stimulation owing to the optically stimulated electrons from different depth traps to shallow traps. Due to the invisibility of UVA light, barcode information stored on the phosphor film can be read by NIR light and then erased by blue light, exhibiting the potential application in optical data storage with good concealment and security. Most remarkable is the electron charging-discharging linear functions of the irradiated power of UV, and blue and NIR light which was never reported, providing a feasible approach for optical power detection in a wide-wavelength-range. This work not only offers a guideline to develop novel high-performance UV PersL materials but also provides a route to effectively manipulate the electrons in the traps toward applications in advanced optical information storage and wide-wavelength-range light detection.

Probing laser-induced spin-current generation in synthetic ferrimagnets using spin waves

Several rare-earth transition-metal ferrimagnetic systems exhibit all-optical magnetization switching upon excitation with a femtosecond laser pulse. Although this phenomenon is very promising for future opto-magnetic data storage applications, the role of non-local spin transport in these systems is scarcely understood. Using Co/Gd and Co/Tb bilayers we isolate the contribution of the rare-earth materials to the generated spin currents by using the precessional dynamics they excite in an adjacent ferromagnetic layer as a probe. By measuring THz standing spin-waves as well as GHz homogeneous precessional modes, we probe both the high- and low-frequency components of these spin currents. The low-frequency homogeneous mode indicates a significant contribution of Gd to the spin current, but not from Tb, consistent with the difficulty in achieving all-optical switching in Tb-containing systems. Measurements on the THz frequency spin waves reveal the inability of the rare-earth generated spin currents to excite dynamics at the sub-ps timescale. We present modelling efforts using the $s$-$d$ model, which effectively reproduce our results and allow us to explain the behavior in terms of the temporal profile of the spin current.

Single-Molecule Magnetism in Linear Fe(I) Complexes with Aufbau and Non-Aufbau Ground States.

With the ongoing efforts on synthesizing mononuclear single-ion magnets (SIMs) with promising applications in high-density data storage and spintronics devices, the linear or quasi-linear Fe(I) complexes emerge as the enticing candidates possessing large unquenched angular momentum. Herein, we have studied five experimentally synthesized linear Fe(I) complexes to uncover the origin of single-molecule magnetic behavior of these complexes. To begin with, we benchmarked the methodology on the experimentally and theoretically well-studied complex [Fe(C(SiMe3)3)2]-1 (1) (SiMe3 = trimethylsilyl), which is characterized with a large spin-reversal barrier of 226 cm-1. Subsequently, the spin-phonon coupling coefficients are calculated for the low-frequency vibrational modes to understand the relaxation mechanism of the complex. Furthermore, the two Fe(I) complexes, that is, [Fe(cyIDep)2]+1 (2) (cyIDep = 1,3-bis(2',6'-diethylphenyl)-4,5-(CH2)4-imidazole-2-ylidene) and [Fe(sIDep)2]+1 (3) (sIDep = 1,3-bis(2',6'-diethylphenyl)-imidazolin-2-ylidene), are studied that are experimentally reported with no SIM behavior under ac or dc magnetic fields; however, they exhibit large opposite axial zero field splitting (-62.4 and +34.0 cm-1, respectively) from ab initio calculations. We have unwrapped the origin of this contrasting observation between experiment and theory by probing their magnetic relaxation pathways and the pattern of d orbital splitting. Additionally, the two experimentally synthesized Fe(I) complexes, that is, [(η6-C6H6)FeAr*-3,5-Pr2i] (4) (Ar*-3,5-Pr2i = C6H-2,6-(C6H2-2,4,6-Pr3i)2-3,5-Pr2i) and [(CAAC)2Fe]+1 (5) (CAAC = cyclic (alkyl) (amino)carbene), are investigated for SIM behavior, since there is no report on their magnetic anisotropy. To this end, complex 4 presents itself as the possible candidate for SIM.

Molecular-Shape-Controlled Binary to Ternary Resistive Random-Access Memory Switching of N-Containing Heteroaromatic Semiconductors.

In organic resistive random-access memory (ReRAM) devices, deeply understanding how to control the performance of π-conjugated semiconductors through molecular-shape-engineering is important and highly desirable. Herein, we design a family of N-containing heteroaromatic semiconductors with molecular shapes moving from mono-branched 1Q to di-branched 2Q and tri-branched 3Q. We find that this molecular-shape engineering can induce reliable binary to ternary ReRAM switching, affording a highly enhanced device yield that satisfies the practical requirement. The density functional theory calculation and experimental evidence suggest that the increased multiple paired electroactive nitrogen sites from mono-branched 1Q to tri-branched 3Q are responsible for the multilevel resistance switching, offering stable bidentate coordination with the active metal atoms. This study sheds light on the prospect of N-containing heteroaromatic semiconductors for promising ultrahigh-density data-storage ReRAM application.

Magnetic Thin Films used for Memory Devices: A Scientometric Analysis

Ultra-thin ferromagnetic films coupled with nonmagnetic layers are extensively studied for their potential applications in data storage. The conventional memory industry is currently in the spotlight, with researchers worldwide contributing toward better data storage technologies that can tackle the data storage problems posed by this era of big data. Various technologies such as perpendicular magnetic recording (PMR) and heat-assisted magnetic recording (HAMR) have been introduced since Poulson’s idea of storing signals was conceptualized. With the introduction of new technologies, like PMR and HAMR, various materials have to be restudied for potential recording media implementation. It is vital to carry out scientometric/bibliometric studies before extensive research. It gives us an insight into the significance of the topic and the gap in the research work. This paper presents a scientometric study from 2010 to 2022 of all the magnetic thin films used for various applications. It provides an overview of the technologies and literature study of their development in data storage applications. The study discusses the analytic results from different comprehensive high indexed databases such as Scopus, Web of Science (WoS), Google Scholar, and the Institute of Electrical and Electronics Engineers (IEEE). To contribute meaningful insights and the perfect representation of the extracted data, various tools like iMapbuilder, Gephi and RAWgraphs are used in this article.

Making and breaking of chemical bonds in single nanoconfined molecules.

Nanoconfinement of catalytically active molecules is a powerful strategy to control their chemical activity; however, the atomic-scale mechanisms are challenging to identify. In the present study, the site-specific reactivity of a model rhenium catalyst is studied on the subnanometer scale for complexes confined within quasi–one-dimensional molecular chains on the Ag(001) surface by scanning tunneling microscopy. Injection of tunneling electrons causes ligand dissociation in single molecules. Unexpectedly, while half of the complexes show only the dissociation, the confined molecules show also the reverse reaction. On the basis of density functional theory calculations, this drastic difference can be attributed to the limited space in confinement. That is, the split-off ligand adsorbs closer to the molecule and the dissociation causes less structural disruption. Both of these facilitate the reverse reaction. We demonstrate formation and disruption of single chemical bonds of nanoconfined molecules with potential application in molecular data storage.

A COMPARISON BETWEEN NOSQL AND RDBMS: STORAGE AND RETRIEVAL

Relational database management systems (RDBMS) emerged as the solution for data storage in the past decades. All data storage systems and applications utilize a RDBMS in the heart of the system to store and retrieve the data. In the past few years a new data storage model, named Not Only Structured Query Language (NOSQL), has emerged to produce less complex data storage systems and to tackle the data's massive volume performance degradation of used systems. In this work, a comparison study is conducted between MySQL as an example of RDBMS and Monogodb as an example of NOSQL systems using threading and machine resources to show the differences for developers to select one of these models for their applications. The results show that the performance of NoSQL is less than MySQL for small datasets and few database operations, such as few thousands of records and hundreds of operations per day. However, with the introduction of threads and volumes of data, the performance of Mongodb overcomes My Structured Query Language (MySQL). In addition, the results have shown that Mongodb requires more memory usage and CPU resources than MySQL to complete their tasks. Finally, the images were saved as byte data inside both platforms. The storing process for this data inside Mongodb was faster than the MySQL platform

Organic Near‐Infrared Luminescent Materials Based on Excited State Intramolecular Proton Transfer Process†

Comprehensive SummaryOrganic near‐infrared (NIR) luminescent materials have captured intense research interest owing to their potential applications in optical communication, data storage, bioimaging, sensing and night vision. Excited state intramolecular proton transfer (ESIPT) process with absorption in normal form while emission in tautomer form can lead to a distinct redshift emission, based on which, a lot of organic NIR luminescent materials were designed. Because of attractive features such as ultrahigh sensitivity to the surroundings, large Stokes shift, and inherent four level system, ESIPT based NIR luminescent materials are supposed to be ideal fluorescent probes and gain materials. In this review, first, organic near‐infrared luminescent materials based on ESIPT process are summarized according to the core structures. Second, recent advances of ESIPT‐based organic near‐infrared fluorescent probes and organic NIR lasers are reviewed. Finally, the current challenges and prospects of ESIPT‐based organic NIR luminescent materials are introduced.

Enhanced resistive switching performance of hafnium oxide-based devices: Effects of growth and annealing temperatures

Although hafnium oxide-based resistive switching (RS) devices have been explored extensively, extremely high operating voltages and currents hinder their application in low power operations. In this study, the growth temperature and annealing conditions have been varied to significantly improve the characteristics of hafnium oxide-based RS devices. Deposited using a rf magnetron sputtering at different temperatures, HfOx films are subsequently subjected to vacuum annealing to create a high density of oxygen vacancies. It is observed that the crystallinity, defect density, and RS device performance of these films are influenced by these thermal treatments. The HfOx film annealed at 450 ºC exhibited bipolar RS with the substantial improvement in the device performance, such as electroforming, set/reset voltages, and operating currents as low as ~1 V, 0.5/− 0.5 V, and ~1 µA, respectively, in addition to large ON/OFF ratio> 103, good endurance (>103 cycles), and retention capability (>104 s). The localized conductive filaments composed of oxygen vacancies are found to be responsible for the RS behavior in Al/HfOx/FTO devices, and the simple vacuum annealing approach considerably increases the proportion of oxygen vacancies. With the insights into the influence of annealing temperatures on the switching parameters, this work paves the way for the design of low-power devices for data storage applications.

Multifunctionality in ferromagnetic shape memory alloy-based resistive switching memory for flexible ReRAM application

Multifunctional flexible electronics is the ongoing demand for fabricating wearable data storage and communication devices. The magnetoelectric (ME) heterostructure consisting of piezoelectric (AlN) and ferromagnetic magnetic shape memory alloy [FSMA (Ni–Mn–In)] was fabricated over stainless steel (SS) substrate for resistive random access memory application. The Cu/AlN/FSMA/SS metal–insulator–metal based memory cell displays bipolar resistive switching (RS) behavior. The formation of Cu metallic filament at a particular SET voltage leads the memory cell in a low resistance state (LRS) from its pristine high resistance state (HRS). The LRS and HRS are explained well by Ohmic and space charge limited conduction mechanisms, respectively. The fabricated memory cell displays excellent endurance and data retention capability with a high OFF/ON ratio of ∼1.2 × 103. Furthermore, the multifunctionality of the ME heterostructure-based RAM was investigated by tuning the SET voltage with ambiance temperature and external magnetic field remotely. A significant change in the SET voltage could be ascribed to the temperature and magnetic field-induced strain transferred to the AlN piezoelectric layer from the magnetostrictive FSMA (Ni–Mn–In) bottom electrode. The residual Lorentz force explains the remotely tuned LRS and HRS in the transverse magnetic field for multi-bit data storage applications. Moreover, the RS characteristics remain stable even after 800 bending cycles as well as with bending angle (0°–180°). Hence, the present ME heterostructure integrated with flexible SS substrate can be a better choice for highly flexible, low-cost, and multifunctional futuristic RAM applications.

Spin manipulation by giant valley-Zeeman spin-orbit field in atom-thick WSe2

The phenomenon originating from spin–orbit coupling provides energy-efficient strategies for spin manipulation and device applications. The broken inversion symmetry interface and the resulting electric field induce a Rashba-type spin–orbit field (SOF), which has been demonstrated to generate spin–orbit torque for data storage applications. In this study, we found that spin flipping can be achieved by the valley-Zeeman SOF in monolayer WSe2 at room temperature, which manifests as a negative magnetoresistance in the vertical spin valve. Quantum transmission calculations based on an effective model near the K valley of WSe2 confirm the precessional spin transport of carriers under the giant SOF, which is estimated to be 650 T. In particular, the valley-Zeeman SOF-induced spin dynamics was demonstrated to be tunable with the layer number and stacking phase of WSe2 as well as the gate voltage, which provides a novel strategy for spin manipulation and can benefit the development of ultralow-power spintronic devices.

Turn-On Mode Circularly Polarized Luminescence in Self-Organized Cholesteric Superstructure for Active Photonic Applications.

Developing circularly polarized luminescence (CPL)-active materials with a large luminescence dissymmetry factor (glum) or stimulus responses has evoked a lot of interest in the past few years; however, the light-controllable "on/off" CPL still remains a challenge. Here, a novel diarylethene-based chiral fluorescent photoswitch featuring "turn-on" CPL characteristic is developed, designated as (S,S)-switch 6, which can undergo reversible photocyclization/cycloreversion upon irradiation with UV and visible light. (S,S)-Switch 6 shows completely reversible "off-on-off"-responsive CPL behavior in solution. By doping (S,S)-switch 6 into nematic liquid crystals (LCs), the consequent luminescent cholesteric LCs (CLCs) exhibit a larger glum value enhanced 2 orders of magnitude when irradiated with UV light, which can be attributed to the highly ordered helical arrangement of CLCs. The potentials of this turn-on type CPL material for anticounterfeiting and information encryption are illustrated. Furthermore, the visualization of circularly polarized (CP) fluorescent patterns can be successfully achieved by constructing the double-layer CPL system consisting of a CP luminescent layer and a polymer cholesteric reflective layer. The proposed concept establishes a light-controlled off-on-off CPL platform that is of tremendous potential for applications in multi-informational data storage and encryption devices.

Better colloidal lithography: Tilt-rotate evaporation overcomes the limits of plasma etching

Colloidal lithography (CL) is a promising method for large-area fabrication of nanohole and nanodot arrays with applications in optical biosensing, separations, and magnetic data storage. However, reducing the diameter of the polystyrene sphere mask by plasma etching unavoidably increases their coefficient of variation (CV) and deforms their shape, thereby limiting the pitch-to-hole-diameter ratio of the resulting nanohole array to less than 3:1 and the minimum hole size to 200 nm with a 10% or better CV. We show that tilt-rotate evaporation colloidal lithography (TRE-CL) breaks the trade-off between hole diameter and polydispersity by leveraging glancing angle evaporation, not plasma etching, to adjust the hole size. TRE-CL allows pitch-to-hole-diameter ratios as high as 7:1 and nanohole diameters down to 60 nm while maintaining a nearly constant CV below 10% and hole circularity above 91%. We transfer these hole arrays into ultrathin Si3N4 films to form nearly-monodisperse microsieves for separation applications. Furthermore, we extend TRE-CL to fabricate adhesion-layer-free plasmonic Au nanodot arrays down to 70 nm in diameter with 10% CV.

Multilevel halide perovskite memristors based on optical & electrical resistive switching effects

With the aim of addressing the growing challenge of approaching the end of Moore's law and von Neumann bottleneck, the evolution of neuromorphic computing based on memristors that emulate the behaviors of the brain has attracted great attention. Organic-inorganic hybrid lead halide perovskites with inherent hybrid ionic-electronic conduction ability have been proposed as promising candidates for memristors to replace traditional charge-based memory. Here we propose MA0.85Cs0.15PbI3 memristors with high surface crystallinity and stable operation in the atmospheric environment by mixing inorganic cation Cs+ and organic cation MA+. The prepared memristors present excellent resistive switching performances including low operation voltage, high ON/OFF ratio, stable endurance, long retention, and robustness under ambient condition. Besides that, four distinct resistance states have been obtained in the above devices by modifying the operation voltages. Moreover, the resistance switching processes can be controlled both by electrical field and light illumination. Finally, this research provides utilization potentiality in the optical and electrical two-dimension controlled multilevel information devices with a total of five stable resistance states. The present work would offer an effective way to develop multifunctional high-density data-storage applications by storing multiple resistance states in a single unit cell.

Single-Crystal to Single-Crystal Transformation of a Spin-Crossover Hybrid Perovskite via Thermal-Induced Cyanide Linkage Isomerization.

Linkage isomers involving changes in the bonding mode of ambidentate ligands have potential applications in data storage, molecular machines, and motors. However, the observation of the cyanide-linkage-isomerism-induced spin change (CLIISC) effect characterized by single-crystal X-ray diffraction remains a considerable challenge. Meanwhile, the high-spin and low-spin states can be reversibly switched in spin-crossover (SCO) compounds, which provide the potential for applications to data storage, switches, and sensors. Here, a new perovskite-type SCO framework (PPN)[Fe{Ag(CN)2}3] (PPN+ = bis(trisphenylphosphine)iminium cation) is synthesized, which displays the unprecedented aging and temperature dependences of hysteretic multistep SCO behaviors near room temperature. Moreover, the thermal-induced cyanide linkage isomerization from FeII-N≡C-AgI to FeII-C≡N-AgI is revealed by single-crystal X-ray diffraction, Raman, and Mössbauer spectra, which is associated with a transition from the mixed spin state to the low-spin state and a dramatic volume shrinkage. Considering the wide use of cyanogen in magnetic systems, the association of CLIISC and SCO opens a new dimension to modulate the spin state and realize a colossal negative thermal expansion.

Supercapacitor and magnetic properties of Fe doped SnS nanoparticles synthesized through solvothermal method

We report the synthesis of pure and Fe doped SnS nanoparticles through the solvothermal method. Fe with different contents (0, 2, 4, and 6 %) were doped in SnS and designated as N1, N2, N3 and N4, respectively. The samples were characterized using X-ray diffraction (XRD), Fourier transform infrared (FT-IR) spectroscopy, Raman, X-ray photoelectron spectroscopy (XPS), Scanning electron microscopy (SEM), Transmission electron microscopy (TEM), Cyclic voltammetry (CV), Charging/discharging (GCD) and Vibrating sample magnetometer (VSM) analysis. XRD patterns confirm that N 1, N2, N3, and N4 samples form an orthorhombic crystal structure. Based on the FT-IR and Raman results, a minor stretching vibration in Sn-S modes was observed in pure SnS and Fe doped SnS samples. SEM study shows samples exhibit ball-like spherical shapes, while the average particle size calculated from TEM images shows sizes between 25 and 30 nm. XPS confirm the chemical composition and binding energy of pure and Fe-doped SnS. Specific capacitance values for pure N1 electrode 419 F/g increases to 1242 F/g with Fe (%) doping which shows that doping has enhanced the electrochemical performance of SnS nanoparticles. The optimized assembled supercapacitor shows a high energy density of 34 Wh kg−1 at a power density of 3214 W kg−1 and owed 98.5 % columbic efficiency with 94.2 % capacitance retention after 5000 cycles. Room temperature Hysteresis measurement show samples exhibit weak ferromagnetism and the saturation magnetization increases with Fe doping. Magnetic studies suggest samples have the potential for data storage applications.

Predicting Laser-Induced Colors of Random Plasmonic Metasurfaces and Optimizing Image Multiplexing Using Deep Learning.

Structural colors of plasmonic metasurfaces have been promised to a strong technological impact thanks to their high brightness, durability, and dichroic properties. However, fabricating metasurfaces whose spatial distribution must be customized at each implementation and over large areas is still a challenge. Since the demonstration of printed image multiplexing on quasi-random plasmonic metasurfaces, laser processing appears as a promising technology to reach the right level of accuracy and versatility. The main limit comes from the absence of physical models to predict the optical properties that can emerge from the laser processing of metasurfaces in which random metallic nanostructures are characterized by their statistical properties. Here, we demonstrate that deep neural networks trained from experimental data can predict the spectra and colors of laser-induced plasmonic metasurfaces in various observation modes. With thousands of experimental data, produced in a rapid and efficient way, the training accuracy is better than the perceptual just noticeable change. This accuracy enables the use of the predicted continuous color charts to find solutions for printing multiplexed images. Our deep learning approach is validated by an experimental demonstration of laser-induced two-image multiplexing. This approach greatly improves the performance of the laser-processing technology for both printing color images and finding optimized parameters for multiplexing. The article also provides a simple mining algorithm for implementing multiplexing with multiple observation modes and colors from any printing technology. This study can improve the optimization of laser processes for high-end applications in security, entertainment, or data storage.

On the Decoding Performance of Spatially Coupled LDPC Codes With Sub-Block Access

We study spatially coupled LDPC codes that allow access to sub-blocks much smaller than the full code block. Sub-block access is realized by a semi-global decoder that decodes a chosen target sub-block by only accessing the target, plus a prescribed number of helper sub-blocks adjacent in the code chain. This paper develops a theoretical methodology for analyzing the semi-global decoding performance of spatially coupled LDPC codes constructed from protographs. The main result shows that semi-global decoding thresholds can be derived from certain thresholds we define for the single-sub-block graph. These characterizing thresholds are also used for deriving lower bounds on the decoder’s performance over channels with variability across sub-blocks, which are motivated by applications in data storage.

Systematic Evolution of Optical Bandgap and Local Chemical State in Transparent MgO and HfO2 Resistive Switching Materials

Herein, a comprehensive investigation into the optical, local chemical state, and electrical properties of the less explored magnesium oxide (MgO) are presented for resistive switching data storage applications in reference to the well‐documented hafnium oxide (HfO2). The observed local chemical state from X‐ray photoelectron spectroscopy (XPS) analysis yields a nonlattice oxygen peak in O 1s spectra, indicating the resistive switching potential of polycrystalline MgO analogous to the amorphous HfO2 as‐deposited thin films. The optical investigation through UV–visible spectroscopic and photoluminescence examination reveals the high transmissivity of HfO2 (84–98%) and MgO (86–88%) thin films in visible and near‐infrared domains, with a high bandgap of 5.6 and 4.2 eV, respectively, implying the possibility of two distinct stable states essential for resistive switching phenomena. Additionally, the electrical characterization manifests bipolar switching phenomena in HfO2 and MgO metal–oxide–metal stacks with SET transitions at 0.6 and 0.5 V, followed by RESET transitions at −0.6 and −0.5 V, respectively. Both oxides in respective stacks exhibit dominant Ohmic conduction in high‐resistive and low‐resistive regions during positive and negative bias. These observations propose MgO as a preferable resistive switching material for nonvolatile data storage applications, showing similar properties of widely studied HfO2.