Device Applications Research Articles

Circular photocurrents in centrosymmetric semiconductors with hidden spin polarization

Centrosymmetric materials with site inversion asymmetries possess hidden spin polarization, which remains challenging to be converted into spin currents because the global inversion symmetry is still conserved. This study demonstrates the spin-polarized circular photocurrents in centrosymmetric transition metal dichalcogenide semiconductors at normal incidence without applying electric bias. The global inversion symmetry is broken by using a spatially-varying circularly polarized light beam, which could generate spin gradient owing to the hidden spin polarization. The dependence of the circular photocurrents on electrode configuration, illumination position, and beam spot size indicates an emergence of circulating electric current under spatially inhomogeneous light, which is associated with the deflection of spin-polarized current through the inverse spin Hall effect. The circular photocurrents is subsequently utilized to probe the spin polarization and the inverse spin Hall effect under different excitation wavelengths and temperatures. The results of this study demonstrate the feasibility of using centrosymmetric materials with hidden spin polarization and non-vanishing Berry curvature for spintronic device applications.

Elastic mechanical thermodynamic and thermoelectric properties of pristine and titanium doped Mg2Si: a density functional theory study

Herein, we report a systematic investigation of the effect of Titanium doping on the structural, elastic, mechanical, thermodynamic, and thermoelectric (TE) dynamics of Mg2Si Compounds using first-principle investigation. The present study has been carried out using the full potential linearized augmented plane wave method as implemented inWien2kcode undermBJexchange potentials. The investigations revealed that Mg2-xTixSi compounds have structural stability with cubic phase (Fm-3msymmetry) and possess degenerate semiconducting nature. The analysis of elastic constants revealed mechanical stability of the investigated compounds following Born criteria. Thermodynamic investigations have been carried out in the temperature range of 100-1500 K at zero pressure and the quantities like heat capacity, Debye temperature, Grüneisen constant, and thermal expansion coefficient have been critically analyzed. Lastly, the TE performance of Mg2-xTixSi compounds has been predicted by estimating the thermopower (S2σ) and TE figure of merit (zT) in the temperature range of 300-1500 K. The predicted value ofzTmaxfor Mg2-xTixSi compound is 0.67 at 800 K forx= 0.25 titanium content, suggesting materials promising application for TE energy harvesting and mechanical devices.

Accordion-Structured Hydrogel Battery Capable of Maintaining Ion Gradients for Extended Periods.

Inspired by the electric eel, biomimetic, biocompatible energy storage, and power generation technologies show promise for applications in portable and wearable electronic devices by mimicking the electric cell tandem structure of the electric eel and utilizing ionic gradients between hydrogel compartments to generate electricity. Previously, inspired by the unique morphology of the torpedo fish, an artificial flexible power source that can output a large current was introduced. This power source uses a hydrogel-infused paper hybrid to create, accordionize, and reconfigure arbitrary-sized gel films in series and parallel, and the power output of the flexible battery was significantly enhanced. However, maintaining the ionic gradient of hydrogel batteries during storage remains a challenge. Here, by borrowing the isolation properties of the accordion structure, we propose a unique paper accordion structure design to fabricate an Accordion-Structured Hydrogel Battery (ASHB). Pretreatment of hydrogel-injected paper strips improved storage stability and maintained the ionic gradient of hydrogel cells in the nonworking state, so that the cell's gradient retention time after the assembly is completed is increased by at least 30 h compared to stacking, and its per-cell operating voltage is still able to reach. The design also makes the assembly and use of flexible batteries more modular and holistic. In the future, it may be possible to power the cells with ions generated by the human body or the metabolites of living organisms, leading to the development of more efficient, sustainable, and eco-friendly power solutions.

FPGA Realization of a Fractional-Order Model of Universal Memory Elements

This paper addresses critical gaps in the digital implementations of fractional-order memelement emulators, particularly given the challenges associated with the development of solid-state devices using nanomaterials. Despite the potentials of these devices for industrial applications, the digital implementation of fractional-order models has received limited attention. This research contributes to bridging this knowledge gap by presenting the FPGA realization of the memelements based on a universal voltage-controlled circuit topology. The digital emulators successfully exhibit the pinched hysteresis behaviors of memristors, memcapacitors, and meminductors, showing the retention of historical states of their constitutive electronic variables. Additionally, we analyze the impact of the fractional-order parameters and excitation frequencies on the behaviors of the memelements. The design methodology involves using Xilinx System Generator for DSP blocks to lay out the architectures of the emulators, with synthesis and gate-level implementation performed on the Xilinx Artix-7 AC701 Evaluation kit, where resource utilization on hardware accounts for about 1% of available hardware resources. Further hardware analysis shows successful timing validation and low power consumption across all designs, with an average on-chip power of 0.23 Watts and average worst negative slack of 0.6 ns against a 5 ns constraint. We validate these results with Matlab 2020b simulations, which aligns with the hardware models.

Random alloy growth of AlAs0.08Sb0.92 on GaSb under high Group-V flux condition

The growth of AlAsxSb1-x epilayers with x < 0.1 is crucial for various optoelectronic device applications. However, achieving the desired alloy composition and lattice-matched condition remains challenging. In this study, the epitaxial growth of the random alloy AlAsSb on GaSb was investigated using molecular beam epitaxy. The objective was to determine the optimal growth condition to obtain AlAs0.08Sb0.92 on GaSb (lattice-matched to GaSb) with a high growth rate and under a high group-V/III beam equivalent pressure (BEP) ratio. The growth parameters, including the group-V/III BEP ratio, growth rate, and temperature, were studied to monitor the change in the structural properties of the AlAsSb epilayer. It was shown that the As incorporation in AlAsSb was higher than expected at high growth rate and under high Sb BEP condition. The results demonstrated that increasing the growth temperature while decreasing the As BEP did not significantly improve the crystal quality where the optimization of group-V/III BEP ratio and As BEP is effective to obtain AlAs0.08Sb0.92 on GaSb and enhance the crystal quality. The findings provide valuable insights into the growth dynamics of AlAsSb to achieve high quality and lattice-matched epilayers grown on GaSb which is well-suited for a range of optoelectronic applications.

High performance Au/mix-phase MgZnO/Ga-doped ZnO/In heterojunction solar-blind UV detector with small work voltage

High performance UVC (220 nm–280 nm) detectors with low work voltage is key problem in wide application of UVC optoelectronic device. Here, Au/MgZnO/Ga-doped ZnO/In heterojunction detector is made with both high UVC sensitivity mix-phase MgZnO and high carrier density Ga-doped ZnO conductive layers. The heterostructure detector possess relative high response(0.36A/W)at 254 nm deep UV light without bias voltage. The avalanche breakdown phenomenon within the heterojunction detector, introduced high deep UV response (1390.3 A/W at 3.3 μW/cm2 230 nm) of the Au/MgZnO/Ga-doped ZnO/In heterojunction detector under 5 V bias voltage. The high response of Au/MgZnO/Ga-doped ZnO/In heterojunction detector under low work voltage, is not only much higher than MSM structure MgZnO detector under bias voltage over 25 V, but also higher than reported deep UV detector under small bias voltage. In addition, because of different internal breakdown mechanism, the peak response position of the Au/MgZnO/Ga-doped ZnO/In heterojunction detector is located at shorter wavelength position compared with MSM structure MgZnO detector. Therefore, Au/MgZnO/Ga-doped ZnO/In heterojunction detector is an ideal device structure in low voltage driven detector with relative high response at short wavelength UV light.

A new homologous series of semi-conducting liquid crystals based on phenyl-anthracene: synthesis and effect of the alkyloxy terminal chain on charge transport and photoconductive properties.

π-Conjugated systems are the key to the charge transport properties of organic semiconductors. Four multifunctional mesogenic materials were designed and synthesised from 2-amino anthracene and para-hydroxybenzaldehyde. Each material contains a central, rigid phenyl-anthracene core and one flexible alkyloxy chain with different lengths based on the concept of combining liquid crystal (LC) materials featuring facile processability, highly ordered alignment, and effective charge transport. (E)-N-(Anthracen-2-yl)-1-(4-(alkyloxy)phenyl) methanimine (n-OPIA) with n = 8, 10, 12, and 16 was chemically characterized by nuclear magnetic resonance spectroscopy and high-resolution mass spectrometry. Their thermal behaviours were performed by means of differential scanning calorimetry and polarised optical microscopy and showed differences in mesomorphic behaviours with respect to the alkyloxy chain length. Concerning their frontier molecular energy levels, they were studied by optical spectroscopy and cyclic voltammetry and compared to values obtained via ab initio density-functional theory (DFT) calculations. LC field-effect transistors (LC-FETs) using a solvent vapour enhanced drop casting based n-OPIA material showed efficient electrical parameters and interesting photoconductive properties, indicating their potential applications in multifunctional integrated devices. As the alkyloxy chain length of the n-OPIA compounds increased, the hole mobility, on/off current ratio, and responsivity decreased. The 8-OPIA homologue exhibits a mobility one order of magnitude larger than the previously studied homologue, namely 10-OPIA.

Artificial synapses based on HfOx/TiOy memristor devices for neuromorphic applications

As a result of enormous progress in nanoscale electronics, interest in artificial intelligence (AI) supported systems has also increased greatly. These systems are typically designed to process computationally intensive data. Parallel processing neural network architectures are particularly noteworthy for their ability to process dense data at high speeds, making them suitable candidates for AI algorithms. Due to their ability to combine processing and memory functions in a single device, memristors offer a significant advantage over other electronic platforms in terms of area scaling efficiency and energy savings. In this study, single-layer and bilayer metal-oxide HfOxand TiOymemristor devices inspired by biological synapses were fabricated by pulsed laser and magnetron sputtering deposition techniques in high vacuum with different oxide thicknesses. The structural and electrical properties of the fabricated devices were analysed using x-ray reflectivity, x-ray photoelectron spectroscopy, and standard two-probe electrical characterization measurements. The stoichiometry and degree of oxidation of the elements in the oxide material for each thin film were determined. Moreover, the switching characteristics of the metal oxide upper layer in bilayer devices indicated its potential as a selective layer for synapse. The devices successfully maintained the previous conductivity values, and the conductivity increased after each pulse and reached its maximum value. Furthermore, the study successfully observed synaptic behaviours with long-term potentiation, long-term depression (LTD), paired-pulse facilitation, and spike-timing-dependent plasticity, showcasing potential of the devices for neuromorphic computing applications.

A 36-nucleus silver-thiolate cluster encapsulating double sulfates and co-protected by cyclen

New type of cyclic multi-dentate ligand named, Cyclen (1,4,7,10-tetraazacyclododecane, [12]aneN4), was successfully introduced onto the surface of a 36-nucleus double sulfates templated silver-thiolate cluster [(SO4)2@Ag36(SPhtBu)24(cyclen)4(CF3CO2)6(OH)2] (1). The nanocluster was investigated and characterized by single-crystal X-ray crystallography (SXRD), infrared spectroscopy (IR), X-ray photoelectron spectroscopy (XPS), thermogravimetry (TG), ultraviolet−visible (UV) spectroscopy, and photoluminescence (PL). The cluster shows very good solution stability in four different solvents and excellent thermal stability in the solid-state. It shows orange-red emission in EtOAc/THF/CH2Cl2/CHCl3 at 77 K. The lifetime of 1 in four different solvents is over 140 μs, and the highest quantum yield of 1 is 25.46 %. The nanocluster shows temperature-dependent photoluminescence properties in different solvents, which make them potential candidates in the fields of optical devices for future applications.

Photo‐Induced Ultrafast Charge Transfer and Air‐Stable Radical Formation in Tetraphenylpyrene Derivatives

AbstractStable organic radicals generated by photo‐excitation hold applications in molecular switching devices and information storage. It remains challenging to develop photo‐generated radical materials with rapid response and air stability in the solid state. Here, we report a structure based on 1,3,6,8‐tetraphenylpyrene derivative (Py‐TTAc) displaying photo‐induced radicals with air stability in the solid state. Photo‐induced electron transfer, exposed to a 365 nm ultraviolet lamp for 1 minute, affords radicals in Py‐TTAc powder as confirmed by electron paramagnetic resonance (EPR) spectroscopy. The maximum radical concentration reaches 2.21 % after continuous irradiation for 1 hour and recurs more than 10 times without any chemical degradation. The mechanistic study according to the femtosecond transient absorption (fsTA) and X‐ray technology suggests that the radicals are derived from photo‐induced symmetry‐breaking charge separation (SB‐CS) and stabilized through non‐covalent interactions. The photo‐generated stable radical system is employed in anti‐counterfeiting paper and optoelectronic device applications. This study will provide insights into the development of photoactive organic radical materials.

Comparative VUV Synchrotron Excitation Study of YAG: Eu and YAG: Cr Ceramics

Using synchrotron radiation, a comparative VUV excitation study of YAG ceramics doped with Eu3+ and Cr3+ ions under VUV excitation (10.5–3.7 eV) at 9 K was conducted in this work. Both ceramics exhibit distinct excitation peaks in the VUV region, indicating high-energy transitions related to the internal electronic levels of the dopants and interband transitions within the YAG matrix. For YAG:Eu, the main excitation peaks at 6–7 eV correspond to transitions within the 4f-shell of Eu3+ and Eu3+-O2− charge transfer states, showing weak dependence on the crystal field and high energy conversion efficiency. In contrast, YAG:Cr shows broad excitation bands due to transitions between levels influenced by strong crystal field interactions, resulting in lower luminescence efficiency. The study highlights the importance of crystal structure and dopant interactions in determining the spectral characteristics of YAG-based ceramics, offering potential for their application in advanced optoelectronic devices.

Mn2+ doped aluminum-rich spinel transparent ceramic phosphor with higher performance for wide color-gamut backlight display

Due to the great potential of narrow-band green-emitting phosphors for wide color-gamut white light-emitting diodes (WLED) backlight displays, there is great interest in finding host materials with the desired luminescent properties and high quantum efficiency. Herein, a series of Mg0.98-xAl2(1+x/3)O4: 0.02Mn2+ (x = 0, 0.125, 0.25) powders were synthesized using high-temperature solid-phase reactions, followed by a combination of pressureless sintering and hot isostatic pressure sintering to fabricate transparent ceramic phosphors. The crystal structure refinement, NMR spectroscopy, and photoluminescence results show tetrahedral coordination of Mn2+ ions and an increase in cation vacancies and disorder with increasing x. These transparent ceramics exhibit narrow-band green emission, which shifts from 523 to 520 nm with increasing x. The Mg0.855Al2.08O4: 0.02Mn2+ ceramic sample has an in-line transmittance of over 80 % above 500 nm and internal quantum efficiencies as high as 96.2 %. The luminous intensity of the Mg0.855Al2.08O4: 0.02Mn2+ ceramic remains above 88.6 % at 425 K compared to room temperature, with a thermal conductivity of 12.4 W·m−1·K−1. A WLED device fabricated using the Mg0.855Al2.08O4: 0.02Mn2+ ceramic, K2SiF6:Mn4+ phosphors, and a blue chip show a wide color gamut of 126 % National Television System Committee standard. The results show that Mn2+-doped aluminum-rich spinel transparent ceramics have great potential for application in wide color gamut WLED backlight devices.

Multimode Luminescence Tailoring in PMA4Na(In,Sb)Cl8 Organic–inorganic Hybrid Metal Halide via Rigid Benzene Ring Induced Local Lattice Distortion

AbstractLow dimensional organic‐inorganic hybrid metal halide materials have attracted extensive attention due to their superior optoelectronic properties. However, low photoluminescence quantum yields (PLQYs) caused by parity‐forbidden transition hinder their further application in optoelectronic devices. Herein, a novel yellow‐emitting PMA4Na(In,Sb)Cl8 (C7H10N+, PMA+) low‐dimensional OIMHs single crystal with a PLQY as high as 88 % was successfully designed and synthesized, originating from the fact that the doping of Sb3+ effectively relaxes the parity‐forbidden transition by strong spin‐orbit (SO) coupling and Jahn‐Teller (JT) interaction. The as‐prepared crystal shows an efficient dual emission peaking 495 and 560 nm at low temperature, which are ascribed to different levels of 3P1→1S0 transitions of Sb3+ in [SbCl6]3− octahedral caused by JT deformation. Moreover, wide‐range luminescence tailoring from cyan to orange can be achieved through adjusting excitation energy and temperature because of flexible [SbCl6]3− octahedral in the PNIC lattice. Based on a relative stiff lattice environment, the 560 nm yellow emission under 350 nm light excitation exhibits abnormal anti‐thermal quenching from 8 to 400 K owing to the suppression of non‐radiative transition. The multimode luminescence regulation enriches PMA4Na(In,Sb)Cl8 great potential in the field of optoelectronics such as temperature sensing, low temperature anti‐counterfeiting and WLED applications.

A THEORETICAL STUDY OF THE PHYSICAL PROPERTIES OF HEXAGONAL GALLIUM NITRATE USING DENSITY FUNCTIONAL THEORY

First-principles calculations based on density functional theory (DFT) have been used to investigate structural, electronic, optical and thermodynamic aspects of the α-GaN crystal. Based on local density approximations (LDA), Generalized gradient approximation (GGA) and meta-generalized gradient approximation (m-GGA) functional methods, the band gap energies of α-GaN crystals have been estimated as 1.962 eV, 2.069 eV and 2.354 eV. The band gap energies that are presented in these studies are in accordance with the ones from the other experimental and theoretical studies. Besides, our findings give us knowledge about the electronic and optical properties of α-GaN crystal. The band gap energies in the α-GaN crystal are the key factors that define its electrical and optical characteristics. They are the energy range in which the electrons can be exited from the valence band to the conduction band, which in turn affects the material's conductivity and the ability of the material to absorb and emit light. The approximate of our results with the previous researches indicates the reliability of our findings and thus increases our knowledge of α-GaN's electronic and optical phenomena. The orbital characteristics of the Ga and N atoms were found by simulating the density of state and the partial density of state for α-GaN. Besides the analysis of the band structure, density of states and optical properties of the compound we also included. The results show that α-GaN has a direct bandgap, which is at the G point in the Brillouin zone. This is the reason for its great potential for the development of optoelectronic devices. Also, we use the three approximations that are given earlier to find the optical characteristics (the absorption coefficient) of the compound. In addition to that, the thermodynamic properties that can be calculated like Debye temperature, enthalpy, free energy, entropy and heat capacity enable us to understand the thermal behavior of the compound better. The heat capacity of α-GaN is detected to be 17.3 Jmole-1K-1, with a Debye temperature of 824.6K. This research will offer a detailed interpretation of α- G-N, covering all its basic properties and the possible applications in optoelectronic and electronic devices. The results of this study are very important and the new technologies that will be developed based on the α-GaN research will be very beneficial.

Photo-Induced Ultrafast Charge Transfer and Air-Stable Radical Formation in Tetraphenylpyrene Derivatives.

Stable organic radicals generated by photo-excitation hold applications in molecular switching devices and information storage. It remains challenging to develop photo-generated radical materials with rapid response and air stability in the solid state. Here, we report a structure based on 1,3,6,8-tetraphenylpyrene derivative (Py-TTAc) displaying photo-induced radicals with air stability in the solid state. Photo-induced electron transfer, exposed to a 365 nm ultraviolet lamp for 1 minute, affords radicals in Py-TTAc powder as confirmed by electron paramagnetic resonance (EPR) spectroscopy. The maximum radical concentration reaches 2.21 % after continuous irradiation for 1 hour and recurs more than 10 times without any chemical degradation. The mechanistic study according to the femtosecond transient absorption (fsTA) and X-ray technology suggests that the radicals are derived from photo-induced symmetry-breaking charge separation (SB-CS) and stabilized through non-covalent interactions. The photo-generated stable radical system is employed in anti-counterfeiting paper and optoelectronic device applications. This study will provide insights into the development of photoactive organic radical materials.

Gate-driven transition temperatures of electron hopping behaviors in Hubbard bands formed by dopant-induced QD array in silicon nanowire

Abstract Dopant atoms confined in silicon nanoscale channel can be ionized to form quantum dots (QDs). Several dopant atoms couple with each other forming energy bands, where the electron hopping behavior can be described by the Hubbard model. This characteristic renders dopant-induced quantum dots particularly appealing for applications in nanoelectronic and quantum devices. Herein we study the gate-driven transition temperatures of electron hopping behavior in upper and lower Hubbard bands formed by dopant-induced QD array in junctionless silicon nanowire transistors. The gate-dependent transition temperatures are calculated for three stages of electron hopping behaviors including Efros-Shklovskii Variable Range Hopping (ES-VRH), Mott Variable Range Hopping (Mott-VRH) and Nearest Neighbor Hopping (NNH). Our experimental results indicate that the ES-VRH in arrays of dopant atoms occurs in the domination of a long-range Coulomb interaction, in which the hopping distance relies on the Coulomb gap. Furthermore, the localization length of ES-VRH can be modulated by gate voltages.Those factors lead to the significant difference of transition temperatures between the upper and lower Hubbard bands. In addition, we find that the source-drain bias voltage can effectively modulate the transition temperatures between VRH and NNH by thermal activation energies under different bias voltages Vds.

Development of a Modular Adjustable Wearable Haptic Device for XR Applications

Development of a Modular Adjustable Wearable Haptic Device for XR Applications

Experimental testing of additively manufactured embedded fiber optic smart devices for clean energy applications

Abstract An additively manufactured prototype smart device was created to investigate in-flow temperature distributions using embedded high-definition fiber optic sensors within a component for clean energy systems. The devices were created using Ultrasonic Additive Manufacturing to create a unique embedded pathway within a flow conditioner for the high-definition fiber optic sensors to be placed within. The fibers used allowed for temperature measurements to be taken every 0.65 mm along the fiber. The high-resolution fibers were thermally calibrated enable the 2D reconstruction of the temperature profile in the flow path of the structure. This is due to the temperature-related strain response of the material and strain measurements of the fibers. Hot airflow testing of these devices showed the ability to identify localized temperature differences in the flow. The observed strain response within the smart device had higher strain concentrations in the thicker web regions than in the thinner web regions. These higher strain regions resulted in higher uncertainties for the temperature responses. Further calibration is needed to improve the accuracy of the smart devices, specifically within the inner web structures of a flow straightening component. Further investigations of the devices within flow showed the temperature sensing to be independent of the effects of flow velocity. The devices were able to distinguish temperature differences within single and two-phase flow and showed local sensitivity to the temperature changes with the identification of hot and cold spots. The presented results showed the viability of the smart device for obtaining detailed temperature distributions using common industrial components. Eventually, the goal for these smart devices will be to withstand higher temperature and pressure environments such as those experienced in nuclear, fusion, and concentrated solar energy systems.

Observation of kagome-like bands in two-dimensional semiconducting Cr8Se12

The kagome lattice is a versatile platform for investigating correlated electronic states. However, its realization in two-dimensional (2D) semiconductors for tunable device applications is still challenging. An alternative strategy to create kagome-like bands is to realize a coloring-triangle (CT) lattice in semiconductors through a distortion of a modified triangular lattice. Here, we report the observation of low-energy kagome-like bands in a semiconducting 2D transition metal chalcogenide—Cr8Se12 with a thickness of 7 atomic layers—which exhibits a CT lattice and a bandgap of 0.8 eV. The Cr-deficient layer beneath the topmost Se-full layer is partially occupied with 2/3 occupancy, yielding a √3 × √3 Cr honeycomb network. Angle-resolved photoemission spectroscopy measurements and first-principles investigations reveal the surface kagome-like bands near the valence band maximum, which are attributed to topmost Se pz orbitals modulated by the honeycomb Cr.

Black Phosphorus for Mid-Infrared Optoelectronics: Photophysics, Scalable Processing, and Device Applications.

High efficiency mid-infrared (λ = 3-8 μm) light emitters and photodetectors are pivotal for advancing next-generation optoelectronics. However, narrow-bandgap semiconductors face fundamental challenges such as pronounced nonradiative carrier recombination and thermally generated noise, which impede device performance. Recently, two-dimensional layered black phosphorus (BP) and its alloys have attracted substantial interest for mid-infrared device applications, demonstrating superior performance relative to conventional III-V and II-VI semiconductors with similar bandgaps. In this review, we discuss the optical properties of BP, contrasting these with those of covalent compounds. Owing to its inherently self-terminated surface structure and reduced nonradiative recombination, BP exhibits high performance in light emission and photodetection at room temperature. Furthermore, this review highlights recent advances in the large-area processing of BP thin films, paving the way for practical device applications and integration. Finally, we explore ongoing challenges and emerging opportunities in the utilization of BP for functional mid-infrared devices.