Device Applications Research Articles

TERMOELEKTRIK GENERATOR DAN FUNGSINYA

This article summarizes and reviews various journals on the performance, applications, and development of Thermoelectric Generators (TEG) that convert temperature differences into electrical energy through the Seebeck effect. The aim of this review is to provide a comprehensive overview of advancements in TEG technology and its potential in enhancing energy efficiency and renewable energy utilization. The methodology includes a literature review of research methods applied in previous studies, including simulations and experiments aimed at improving TEG efficiency. Some studies also integrate TEG with phase change materials (PCM) to harvest energy from ambient temperature fluctuations. The review findings indicate that innovations in TEG materials and design can significantly improve the efficiency and sustainability of this technology. Additionally, this article discusses the applications of TEG in various fields, such as waste heat recovery from industrial processes and vehicles, as well as in wearable devices to harvest energy from body heat. A table presenting research methods and comparisons of previous studies is included to offer a thorough view of current developments in TEG technology. The conclusion of this review is that TEG has significant potential as a solution for waste heat recovery, wearable device applications, and as an efficient renewable energy source. The article also provides recommendations for future research, including the development of new materials and more optimal designs, to address existing challenges and maximize the potential of TEG.

Optical, structural, and vibrational properties of In2S3 thin films by Sputtering-RF for applications in optoelectronics devices.

Abstract Experimental results on the crystalline orientation properties, energy band gap, and Raman vibrational modes of Indium Sulfide (In2S3) thin films grown by Sputtering in Radio Frequency mode are presented. The In2S3 thin films were grown at 25, 200, and 300°C; thereafter the samples were thermally annealed in air for 30 min at 450°C, in order to improve their crystalline and physical properties. Energy dispersive X-ray spectroscopy results showed that the β-In2S3 crystallographic phase became predominant as the substrate temperature increased. For the optical transmittance spectra, it was observed that the deposited In2S3 thin films at 300°C and with thermal annealing showed an increase in their band gap energy of nearly 60 meV. The direct energy band gap of In2S3 films varied in the range of 2.76–2.82 eV. The scanning electron microcopy image and elemental analysis shows a better morphology, and an increase in O and Sn when the In2S3 samples were subjected to thermal annealed and the substrate temperature increased, respectively. Photoluminescence spectra were obtained at room temperature and showed two emission bands around 1.75 (709 nm) and 2.35 eV (527 nm), one related to interstitial indium donor sites (Ini) and oxygen acceptor vacancies (OVs), and the second to an emission band corresponding to the transition sulfur donor-indium acceptor. As the substrate temperature increased and thermal annealing of In2S3 was performed, the 1.75 eV emission bands increased in intensity with respect to the 2.35 eV band. From the Raman measurements, it was observed that the vibrational peaks were better defined as the substrate temperature increased and In2S3 underwent thermal annealing. In addition, to study the spinel-like defect structure, the peaks corresponding to the five main vibrational modes of In2S3 were identified as the Alg mode, Eg mode, and three modes of the F2g.

Origin of the contrasting magnetic stability of antiferromagnetic CuMnAs and CuMnSb

Antiferromagnetic (AFM) materials exhibit great potential for next-generation spintronic applications because they have some unique characteristics compared to ferromagnetic (FM) materials. For example, the successful electrical manipulation and detection of the Néel vector at room temperature was recently realized for AFM CuMnAs in its tetragonal phase. The Néel temperature (TN) for tetragonal CuMnAs is about 480 K. In contrast, cubic half-Heusler CuMnSb, despite it is isovalent to CuMnAs, exhibits a notably lower TN of about 50 K, limiting its applicability in spintronic devices. The physical origin behind the stark difference in TN between the two compounds remains unclear. In this study, we investigate both CuMnAs and CuMnSb in both tetragonal and cubic phases. We find that the band crossing between the valence band and conduction band is more pronounced in CuMnSb compared to CuMnAs. This disparity arises from the higher energy level of the Sb 5p orbital relative to the As 4p orbital, resulting in a greater abundance of carriers in CuMnSb than in CuMnAs. Utilizing the effective band coupling model, we establish a relationship between carrier concentration and magnetic stability and confirm that the elevated carrier concentration is the origin of the weakened antiferromagnetism observed in both phases of CuMnSb.

Low temperature catalytic growth graphene with V2O5 prepared with the oxidation method and its application in optoelectronic devices

Based on our previous research on the phase transition property of non-metallic vanadium oxide for low-temperature catalytic growth of graphene, we further propose that V thin films can be deposited by sputtering and then V2O5 thin films can be prepared by oxidizing the V thin films at 400 °C in a rapid annealing furnace with oxygen, which has a better crystalline structure and surface than the V2O5 thin films directly deposited by sputtering. The V2O5 prepared by oxidation was used to catalyze the growth of graphene at 300 °C in a PECVD furnace. During the growth process, a 10-fold increase in the H2 flow rate (200 sccm) was used to repair and eliminate the suspension bonds and defects of graphene, and the quality of graphene films was improved. Due to the high resistivity of V2O5 at room temperature, V2O5 can be directly used as the interlayer of the device, and the graphene-V2O5-Si (GVS) structure photodetector is proposed, which avoids the damage and impact of the transfer process and catalytic layer removal process in the conventional graphene device process. Additionally, because of the negative temperature coefficient of resistance (TCR) of vanadium oxide materials, the optical response of the GVS device is further extended to 1550 nm.

Engineering the band structure of type-II MoSe2/WSe2 van der Waals heterostructure by electric field and twist angle: a first principles perspective

Type-II heterostructures composed of transition-metal dichalcogenides have attracted enormous attention due to their facilitation in efficient electron-hole separation. In this work, we performed density-functional theory calculations to systematically investigate the atomic and electronic structures of MoSe2/WSe2van der Waals heterostructure. Its six high-symmetry configurations with different interlayer coupling under external electric field and twist angle were addressed. Our results reveal that all the configurations exhibit type-II band alignment and their band gaps can be effectively modulated by the electric field. Notably, the direct to indirect band gap transition only occurs in the configurations with strong interlayer coupling. Moreover, twist-induced symmetry breaking weakens the interlayer interactions, thus decreasing interlayer charge transfer. Owing to large interlayer distance and weak interlayer coupling, the band structure of the heterostructure remained unchanged for the twist angles ranging from 13.2° to 46.8°. These findings demonstrate the great potential of the MoSe2/WSe2heterostructure for applications in optoelectronic and nanoelectronic devices.

Alloying Ga2O3 with Fe2O3 on Corundum‐Structured rh‐ITO by Mist CVD and Its Demonstration of Photodetector and Photoelectrode Applications

Corundum‐structured α‐Ga2O3 is an ultrawide bandgap semiconductor with a bandgap of 5.3 eV and is actively investigated for applications in power electronics and optoelectronic devices. This study explores bandgap engineering of α‐Ga2O3 to broaden its application field. By alloying α‐Fe2O3, which has the same corundum structure as α‐Ga2O3, the bandgap can be tuned from 2.2 to 5.3 eV. This allows α‐Ga2O3 to be used as a visible‐light‐driven photocatalyst by narrowing its bandgap. Herein, (Ga, Fe)2O3 alloy thin films are grown on corundum‐structured indium tin oxide (rh‐ITO) electrodes for photocatalytic applications. X‐ray diffraction 2θ–ω measurements reveal that corundum‐structured α‐(Ga, Fe)2O3 thin films are grown on rh‐ITO electrodes with up to ≈20% Ga composition. At higher Ga compositions, orthorhombic ε‐GaFeO3 and amorphous Ga2O3 are observed on the rh‐ITO electrode. Photoresponsivity measurements using a photodetector structure confirm that the thin films exhibit visible light sensitivity upon alloying Fe2O3 with Ga2O3. Linear sweep voltammetry measurements indicate that the α‐(Ga, Fe)2O3 thin film grown on rh‐ITO can serve as a visible light‐driven photoelectrode. The findings contribute to the bandgap engineering of α‐Ga2O3 and its application in photocatalysis.

Low temperature growth of single-phase and preferentially oriented ɛ-Ga2O3 films on sapphire substrates via atomic layer deposition

As an ultrawide-bandgap semiconductor, Ga2O3 has promising applications in electronics and optoelectronics. ɛ-Ga2O3 has attracted much attention as it performs the polarization effect, whereas single-phase and preferentially oriented ɛ-Ga2O3 films have not been prepared by the atomic layer deposition (ALD) method at low temperatures. In this paper, Ga2O3 films are prepared on sapphire substrates through the ALD method at different substrate temperatures and using different O sources. The x-ray reflectivity measured thicknesses and x-ray photoelectron spectroscopy spectra both demonstrate that the Ga source of triethylgallium cannot reacts continuously with the O source of H2O layer-by-layer. The growth rates of Ga2O3 films using O3 or PE-O2 as the O source range from 0.342 to 0.448 Å/cycle. X-ray diffraction (XRD) results indicate that the as-grown Ga2O3 films at 250 °C are amorphous, no matter using O3 or PE-O2 as the O source. They both crystallize into the single-phase and (−201) preferentially oriented β-Ga2O3 films after a high-temperature annealing of 900 °C. When the growth temperature rises to 350 °C, single-phase and (0002) preferentially oriented ɛ-Ga2O3 films occur if using PE-O2 as the O source. The full width at half maximum for the (0004) plane of ɛ-Ga2O3 from the XRD rocking curve is 0.937° while the atomic force microscopy measured surface roughness RMS is 1.24 nm. The crystal structure of the as-grown ɛ-Ga2O3 films can be maintained at an annealing temperature of 700 °C and they transform into polycrystalline β-Ga2O3 films at 900 °C. The results are beneficial for the applications of Ga2O3-based microelectronic devices.

Photoinduced Electron-Nuclear Dynamics of Fullerene and Its Monolayer Networks in Solvated Environments.

The recently synthesized monolayer fullerene network in a quasi-hexagonal phase (qHP-C60) exhibits superior electron mobility and optoelectronic properties compared to molecular fullerene (C60), making it highly promising for a variety of applications. However, the microscopic carrier dynamics of qHP-C60 remain unclear, particularly in realistic environments, which are of significant importance for applications in optoelectronic devices. Unfortunately, traditional ab initio methods are prohibitive for capturing the real-time carrier dynamics of such large systems due to their high computational cost. In this work, we present the first real-time electron-nuclear dynamics study of qHP-C60 using velocity-gauge density functional tight binding, which enables us to perform several picoseconds of excited-state electron-nuclear dynamics simulations for nanoscale systems with periodic boundary conditions. When applied to C60, qHP-C60, and their solvated counterparts, we demonstrate that water/moisture significantly increases the electron-hole recombination time in C60 but has little impact on qHP-C60. Our excited-state electron-nuclear dynamics calculations show that qHP-C60 is extremely unique and enable exploration of time-resolved dynamics for understanding excited-state processes of large systems in complex, solvated environments.

Single ion effect on material and electrical properties of deposited and annealed Al2O3 film on 4H-SiC by atomic layer deposition

Abstract It is preferable for the use of highly radiation tolerant SiC devices in space applications due to the strong covalent bond of SiC material. In particular, the MOS devices using SiO2 as a gate dielectric still exhibits a high density of interface states, which enables huge difficulties in accounting for the formation of latent gate damage generated along the heavy ion incidence path. High-k materials represented by Al2O3 gate dielectric offer the most promise to replace the current SiO2 gate dielectric. Al2O3 is a promising high-k material for application in radiation-resistant gate dielectrics on 4H-SiC. The effects of heavy ion irradiation via linear energy transfer (LET) of 99.8 MeV·cm²/mg Bi ions on the surface morphology and interfacial properties of Al2O3 gate dielectric on 4H-SiC were investigated and demonstrated by various characterization methods. It is found that the uniformity of refractive index of 1100 °C annealed Al2O3 films is less affected by radiation compared to as deposited films. Also, the roughness of Rq for the annealed films is varied from 0.28 nm to 0.34 nm before and after irradiation, which shows less degree of increment as compared to as deposited films with increase from 0.24 nm to 0.54 nm. The bombarded pores can be hardly observed in annealed Al2O3. Additionally, the formation of oxygen vacancies or interstitial oxygen contributes to a decrease of Al-O and Al-O-Si bonds after irradiation. Fortunately, the crystallized Al2O3 induced by annealing exhibits a more robust and stable bonding between Al and O and shows less damaged elemental components. These film characterization and underlying mechanisms behind heavy ion irradiation is of meaningful use for development of SiC metal-oxide-semiconductor field effect transistor (MOSFET) irradiation hardening process.

Magnetization reversal of perpendicular magnetic anisotropy multilayers on polymeric substrates for flexible spintronics applications

Earlier demonstrations of spintronic functionality on flexible substrates have highlighted the potential for spintronics in flexible electronics applications. However, for device applications, the relationship between global magnetization reversal, as measured by hysteresis, and the local reversal processes of nucleation and growth of magnetic domains need to be understood for magnetic systems on flexible substrates. This study compares the local magnetization reversal behavior of perpendicularly magnetized Pt/CoFeB/Pt and Pt/Co/Pt on rigid and flexible polymeric substrates using magneto-optical Kerr effect magnetometry and microscopy. It is shown that while the magnetic hysteresis is comparable, the local details of the nucleation and field driven reversal are quite different and are attributed to the greater variability of the surface structures of the polymeric substrates, which has implications for consistency in device performance.

Orbitronics: Mechanisms, Materials and Devices

AbstractSpintronics has been extensively explored over the past decades, focusing primarily on the spin characteristic of the electron, while the orbital feature of the electron has been conventionally assumed to be quenched by the crystal field effect. Recently, studies have unveiled a fascinating discovery that orbital current, originating from orbital effects, can be generated in materials with weak spin‐orbit coupling by applying electric fields, enabling the manipulation of the ferromagnetic magnetization and induction of terahertz emission. This review highlights recent achievements in orbital effects, materials, and devices, beginning by discussing the mechanisms underlying orbital effects, e.g. the orbital Hall effect, orbital Rashba‐Edelstein effect, inverse orbital Hall effect, and inverse orbital Rashba‐Edelstein effect. Subsequently, a wide range of materials exhibiting orbital effects are classified and the orbital sources in them are identified. Furthermore, the review introduces the orbital torque devices and the orbital terahertz emitters, summarizing the in‐depth mechanisms of the orbital torque, orbital torque efficiency, and orbital diffusion length across various material structures. Additionally, the review presents strategies for enhancing orbital torque efficiency and driving magnetization switching. These efforts aim to explore the potential applications for orbitronic memory devices, computing components, and terahertz emitters.

Self-healing Micro-Supercapacitor Based on Robust Liquid Metal-CNT-PEDOT:PSS Film for Wireless Powering of Integrated Strain Sensor.

The limited energy density of micro-supercapacitors (MSCs) and challenges in their integration significantly impede the advancement of MSCs in wearable electronic devices. Here, this work designs a robust and wrinkled liquid metal-CNT-PEDOT:PSS film with high capacity and self-healing properties (defined as LM-CNT-PEDOT:PSS). The wrinkled structure further enhances tensile properties of LM-CNT-PEDOT:PSS and increases its active specific surface area per unit. Simultaneously, the incorporation of liquid metal (LM) enhances both the mechanical and healing properties of the LM-CNT-PEDOT:PSS electrode. The flexible and self-healing MSC based on wrinkled LM-CNT-PEDOT:PSS shows a remarkable specific capacitance of 114.29 mF cm-2 and a high areal energy density of 15.47 µW h cm-2. Furthermore, the electrochemical performance of the healed MSC retained 90.01% of its initial performance, and the MSC unit can be arbitrarily integrated according to various energy and voltage requirements through the healing properties of LM-CNT-PEDOT:PSS, widening the range of applications in next-generation microelectronic devices. The wrinkled LM-CNT-PEDOT:PSS film is utilized for the fabrication of a highly sensitive strain sensor. Simultaneously, the prepared sensor can be seamlessly integrated with wireless charging and MSC to facilitate convenient monitoring of physiological signals, thereby offering an effective solution for the advancement of wearable technology and self-powered systems.

Ferroelectric Domains Engineering in 2D Van Der Waals Ferroelectric α‑In2Se3 Via Flexoelectric Effect.

2D) Van der Waals ferroelectrics offer the opportunity for developing novel nanoelectronics devices. For device applications, it is necessary to generate controllable ferroelectric polarization domains and achieve non-destructive polarization switching. However, it is very challenging to use the electric field to manipulate the domain state of ultra-thin ferroelectric film due to the large leakage current and even electric breakdown. Here, the flexoelectric effect on the manipulation of polarization states at bending α-In2Se3 flakes is explored via piezoresponse force microscopy (PFM). By introducing patterned Si trench substrates, the stripe micron-scale ferroelectric domains with alternating arrangements of the out of-plane polarization in the curved α-In2Se3 are observed. It is found that the polarization at the bending region of α-In2Se3 can be directly reversed by the large flexoelectric field. The controllable mechanical modulation of α-In2Se3 ferroelectric domains opens up potential applications of ferroelectrics in strain engineering functional devices.

A Comprehensive Review of MXene-Based Emerging Materials for Energy Storage Applications and Future perspectives.

MXenes is a rapidly emerging class of two-dimensional (2D) materials. It exhibits unique properties that make it suitable for a wide range of applications. This review provides a comprehensive overview of the synthesis and processing techniques for MXenes including both bottom-up and top-down approaches. The synthesis of MXene-based composites is explored in detail focusing on MXene-carbon composites, MXene-metal oxides, MXene-metal sulfides, MXene-polymer composites and MXene-ceramic composites. Key properties of MXenes are examined including structural, electrical, morphological, optical, mechanical, chemical stability, electrical and thermal properties, conductivity, magnetic properties, dielectric charge and catalytic properties. Characterization techniques used to study these properties are also reviewed. Their 2D structure provides a high surface area and unique interlayer spacing, making MXenes ideal for applications in energy storage devices (like supercapacitors and batteries) where surface area and ion transport are critical for performance. The diverse applications of MXenes are presented emphasizing their use in batteries, catalysis, sensors, environmental remediation and supercapacitors. Special attention is given to the supercapacitor applications of MXenes of their potential in energy storage devices. Due to their high capacitance, fast charge/discharge rates, and excellent stability, MXenes are used in supercapacitors, lithium-ion batteries, and sodium-ion batteries.

Innovative Ultralow Thermal Budget ZrHfOx Ferroelectric Films with Low-Temperature Phase Transition for Next-Generation High-Speed Multifunctional Devices.

By design of the element concentration, regulating the ratio of the t phase and the energy difference between t and o phases, the ZrHfOx (ZHO) film demonstrated the highest polarization value at a maximum processing temperature of only 280 °C without an annealing process, and it can withstand over 1010 polarization cycles without breakdown. The ZHO film maintains good ferroelectric performance in extreme temperature environments (4.55 to 473 K). Even under high-temperature conditions, the ZHO film shows exceptional endurance performance (>1010 at 423 K). These parameters represent the best overall performance reported in the literature to date. The polarization switching process can be accurately described by the nucleation limited switching (NLS) model, and the polarization switching time is expected to reach the sub-ns level as the device size decreases. The ZHO film demonstrates great potential in both process simplification and performance optimization, providing new possibilities for the application of ferroelectric devices.

Ion Redistribution Gel Electrolyte Dissipates Interfacial Turbulence for Aqueous Zinc‐Ion Batteries

AbstractAqueous zinc‐ion batteries (AZBs) degrade under a high current density due to the existence of interfacial turbulence with severe concentration polarization. Herein, an ion redistribution gel electrolyte is introduced to stabilize the electrode‐electrolyte interface by regulating the ion density gradient. Negatively charged carboxymethyl groups in carboxymethyl starch ether polymer (PCMS) electrolytes can preferentially regulate the ion concentration at the anode interface. The quasi‐solid PCMS gel electrolytes can dissipate the charge accumulation caused by ion concentration differences, which is beneficial for achieving excellent electrochemical stability at high current densities. As a result, the symmetric Zn cells with PCMS gel electrolyte can be cycled for more than 2000 h at a high current density of 40 mA cm−2. Furthermore, the Zn//I2 cell using PCMS gel electrolyte also sustained cycling for over 8000 cycles, and the pouch cell with PCMS gel electrolyte exhibited practical deformable applications in flexible devices. This work highlights an effective gel electrolyte approach for enhancing interfacial stability, potentially advancing the development of highly reversible AZBs.

Double-Oxidant-Induced Slurry Reaction Mechanism and Performance on Chemical Mechanical Polishing of 4H-SiC (0001) Wafer.

Single-oxidant slurries are prevalently utilized in chemical and mechanical polishing (CMP) of 4H-SiC crystal. Nevertheless, it is a challenge to achieve a high material removal rate (MRR) and surface quality using single oxidant slurries to meet the needs of global planarization and damage-free nanoscale surface processing of SiC wafers. To solve this challenge, a novel method is proposed for SiC CMP processing using the double oxidant slurry. This slurry mainly consists of alumina (Al2O3) abrasive particles, potassium permanganate (KMnO4), potassium persulfate (K2S2O8), and deionized water. Post CMP, MRR is 1045 nm/h calculated by scratch method, and surface roughness Sa is 0.33 nm measured by 3D optical surface morphometer, with the measurement area of 868 μm × 868 μm. Both the MRR and Sa are far better than those under the single oxidant slurry condition. CMP mechanism with double-oxidant slurry conditions is elucidated by energy dispersive spectrometer and X-ray photoelectron spectrometer. Initially, the Si-C bond on the SiC wafer surface was oxidized by KMnO4, then MnO2 as the reduction product of KMnO4 can also catalyze the S2O82- to further oxidize SiC wafer surface, and eventually the oxidation layers were removed by mechanical action of nano-Al2O3 abrasive particles during CMP processing. These findings offer a pioneering approach and novel perspectives to achieve a higher MRR of 4H-SiC CMP, with potential implications for the application in high-performance SiC devices.

Fabrication of PVTF Films with High Piezoelectric Properties Through Directional Heat Treatment

Piezoelectric materials can realize the mutual conversion of mechanical energy and electric energy, so they have excellent application prospects in the fields of sensors, energy collectors and biological materials. The poly(vinylidene fluoride) (PVDF)-based polymers have the best piezoelectric properties in the piezoelectric polymer, but they still have a large room for improvement compared with the piezoelectric ceramics. Improving their content of the polar β phase has become a consensus to polish up the piezoelectric performance. Most available studies construct hydrogen bonds or coulomb interactions between the surface of the dopant and molecular chains by doping, which promotes the molecular chains arrangement and thus facilitates the formation of the polar β phase. Recent studies show that the ordered arrangement of molecular chains is also important for piezoelectric properties. At present, the main way to improve the piezoelectric performance of PVDF is through doping or complex heat treatment process. Here, the poly(vinylidene fluoride-co-trifluoroethylene) (P(VDF-TrFE)) film was treated by directional heat treatment which used a heating table. Compared with uniform heat treatment like muffle furnace heat treatment, this simple vertical temperature gradient has many advantages for the content of the β phase and the crystallinity of P(VDF-TrFE). The results of the experiment showed that the content of the β phase of films remained at about 88%. When the film thickness was limited to 100 μm and the heat treatment temperature was limited to 200 °C, its crystallinity could reach 75% and the highest piezoelectric coefficient could reach 33.5 ± 0.7 pC/N. P(VDF-TrFE) films based on the experimental methods described above that show great potential for future applications in electronic devices and biomedical applications.

Application of 3D-Printed External Cranial Protection in the Treatment of Contralateral Subdural Effusion After Decompressive Craniectomy: A Technical Note.

This technical note introduces the application of a 3D-printed external cranial protection device for contralateral subdural effusion after decompressive craniectomy (CSEDC). By applying this device over the cranial defect, the authors observed significant effects in reducing CSEDC formation, alleviating midline shift, and promoting neurological recovery. This report details the design and manufacturing process and presents comparative computed tomography images of a representative patient to demonstrate its efficacy.

Competing technologies: determining the geographical origin of strawberries (Fragaria × ananassa) using laboratory based near-infrared spectroscopy compared to a simple portable device.

The application and development of fast and simple screening methods for the authentication of foods has increased continuously in recent years. A widely used analytical technique is Fourier transform near-infrared spectroscopy (FT-NIR). Despite the simple application of FT-NIR analysis, the analyses are usually carried out on benchtop devices in the laboratory. However small, inexpensive and mobile NIR devices could be used on-site. Despite the simple use of FT-NIR analysis, the examinations are usually carried out on a stationary benchtop device in a laboratory. However, in order to be able to perform the application directly on site, the application of small, cost-effective and mobile NIR devices for food analysis is crucial. In this study, both, a benchtop NIR instrument and a handheld NIR device with a lower resolution and analyzed wavenumber range were applied for the differentiation of strawberries from different geographical origins. Distinguishing German and non-German strawberries using linear discriminant analysis (LDA) yielded an accuracy of 91.9% and 84.0% using the benchtop and the handheld devices, respectively. Relevant variables could be assigned to lipids, carbohydrates and proteins. Overall, our study demonstrated for the first time that analyzing the geographical origin of strawberries using NIR spectroscopy is also possible by means of a handheld device.