Ferroelectric Domains Engineering in 2D Van Der Waals Ferroelectric α‑In2Se3 Via Flexoelectric Effect.

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2D) Van der Waals ferroelectrics offer the opportunity for developing novel nanoelectronics devices. For device applications, it is necessary to generate controllable ferroelectric polarization domains and achieve non-destructive polarization switching. However, it is very challenging to use the electric field to manipulate the domain state of ultra-thin ferroelectric film due to the large leakage current and even electric breakdown. Here, the flexoelectric effect on the manipulation of polarization states at bending α-In2Se3 flakes is explored via piezoresponse force microscopy (PFM). By introducing patterned Si trench substrates, the stripe micron-scale ferroelectric domains with alternating arrangements of the out of-plane polarization in the curved α-In2Se3 are observed. It is found that the polarization at the bending region of α-In2Se3 can be directly reversed by the large flexoelectric field. The controllable mechanical modulation of α-In2Se3 ferroelectric domains opens up potential applications of ferroelectrics in strain engineering functional devices.