Applications In Photovoltaic Devices Research Articles

Using Imidazolium in the Construction of Hybrid 2D and 3D Lead Bromide Pseudoperovskites

The field of hybrid organic–inorganic perovskite materials continues to attract the interest of the scientific community due to their fascinating properties and the plethora of promising applications in photovoltaic and optoelectronic devices. To enhance the efficiency and stability of perovskite-based devices, it is essential to discover novel compounds but also to investigate their various physicochemical, structural, and thermal properties. In this work, we report the synthesis and structural characterization of two novel hybrid lead bromide perovskites, combining the imidazolium cation (IMI) with methylammonium (MA) or formamidinium (FA) cations. The isolated polycrystalline powders were studied with X-ray powder diffraction (XPRD) and were formulated as (IMI)(MA)Pb2Br6, a 3D structure consisting of dimers of face-sharing octahedra linked in corner-sharing mode, and (IMI)(FA)PbBr4, a 2D (110) oriented layer structure with zig-zag corner-sharing octahedra. The thermal stability of (IMI)(MA)Pb2Br6 and (IMI)(FA)PbBr4 was investigated with thermogravimetric (TG) and differential scanning calorimetry (DSC) experiments which showed that both compounds are chemically stable (at least) up to 250 °C. Variable-temperature X-ray diffractometric (VT-XRD) studies of (IMI)(FA)PbBr4 highlighted a structural modification occurring above 100 °C, that is a phase transformation from triclinic to orthorhombic, via an elusive monoclinic phase.

Solution epitaxy of polarization-gradient ferroelectric oxide films with colossal photovoltaic current

Solution growth of single-crystal ferroelectric oxide films has long been pursued for the low-cost development of high-performance electronic and optoelectronic devices. However, the established principles of vapor-phase epitaxy cannot be directly applied to solution epitaxy, as the interactions between the substrates and the grown materials in solution are quite different. Here, we report the successful epitaxy of single-domain ferroelectric oxide films on Nb-doped SrTiO3 single-crystal substrates by solution reaction at a low temperature of ~200 oC. The epitaxy is mainly driven by an electronic polarization screening effect at the interface between the substrates and the as-grown ferroelectric oxide films, which is realized by the electrons from the doped substrates. Atomic-level characterization reveals a nontrivial polarization gradient throughout the films in a long range up to ~500 nm because of a possible structural transition from the monoclinic phase to the tetragonal phase. This polarization gradient generates an extremely high photovoltaic short-circuit current density of ~2.153 mA/cm2 and open-circuit voltage of ~1.15 V under 375 nm light illumination with power intensity of 500 mW/cm2, corresponding to the highest photoresponsivity of ~4.306×10−3 A/W among all known ferroelectrics. Our results establish a general low-temperature solution route to produce single-crystal gradient films of ferroelectric oxides and thus open the avenue for their broad applications in self-powered photo-detectors, photovoltaic and optoelectronic devices.

Synthesis, crystal structure and optical properties of the quasi-0D lead-free organic-inorganic hybrid crystal (C6H14N)3Bi2I9·H2O

The organic-inorganic metal halide perovskite materials have remarkable semiconductor and light absorption characteristics. It shows excellent application prospects in the fields of optoelectronics and temperature sensors. In this work, zero-dimensional lead-free (C6H14N)3Bi2I9·H2O single crystals were synthesized by conventional solvothermal reaction. The crystal structure was analyzed using single crystal X-ray diffraction (SXRD). (C6H14N)3Bi2I9·H2O was crystallized in the orthorhombic crystal system with the space group Pmn21. The material is stable for long-term storage under ambient conditions and shows a reversible thermochromic phenomenon. Through ultraviolet–visible–near-infrared (UV–vis–NIR) absorption analysis, the band gap of (C6H14N)3Bi2I9·H2O at room temperature is found to be 2.12 ​eV and it gradually decreases as the temperature increases. This indicates that the thermochromism is probably caused by charge transfer. The response of material to optical signals was also studied and the maximum value of the responsivity (R) and external quantum efficiency (EQE) at 275 ​nm could reach 11 ​mA/W and 2.4%, respectively. It suggests that the material has a potential for applications in photovoltaic devices.

Re-emerging photo responsiveness enhancement under compression in (NH4)2SeBr6

Pressure has an essential role in the control of both the photo-responsive and electrical transport properties of halide perovskites. As a lead-free halide double perovskite material, (NH4)2SeBr6, which avoids the use of a toxic lead element, has become an ideal candidate for application in photovoltaic and photoelectric devices. In this paper, the photoelectric response and electrical transport response properties of (NH4)2SeBr6 have been studied by photocurrent and alternating current impedance spectroscopy measurements under high pressure up to 21.2 GPa, respectively. The current results indicate that in (NH4)2SeBr6, a second photo-responsiveness enhancement re-emerges above 11.2 GPa, after the photocurrent drops from the first maximum at 6.5 GPa and reaches the second maximum at 16.4 GPa. The photoelectric response of (NH4)2SeBr6 in phase II is better than that of phase I, and electron conduction rather than ion conduction plays a dominant role in the whole electrical transportation process under compression.

Electronic structures and molecular dynamics of gadolinium-doped FAPbI3 perovskite crystals

The additive effect of a gadolinium ion into a formamidinium lead iodide (FAPbI3) perovskite crystal on electronic structures and molecular dynamics was investigated for improving photovoltaic performance with stability. The electronic structures, band structure, partial density of state, and molecular dynamics were determined by first-principles calculation. The band distribution and charge transfer between the 5d orbital of the gadolinium atom, the 5p orbital of the iodine atom, and the 6p orbital of the lead atom promoted the carrier generation and diffusion related to short-circuit current density. The enthalpy and kinetic energy prompted stabilization of the gadolinium-doped crystal with a slight distortion of coordination structure, as compared with the decomposition of the FAPbI3 crystal. Diffusion coefficients of iodine and lead ions in the FAPbI3 crystal with defect were increased, predicting decomposition. The gadolinium-doped FAPbI3 perovskite crystal has great potential for applications in photovoltaic devices by improving photovoltaic performance.

Nucleation and growth of ZnTe thin layers electrodeposited on ITO substrate.

In order to develop materials able to guarantee optimal characteristics in terms of environmental compatibility, abundance, and photoactivity, zinc telluride (ZnTe) has become a great candidate for optoelectronic and photovoltaic device applications. In this work, on the basis of electrochemical techniques including cyclic voltammetry and chronoamperometry, it was found that the electrodeposition of zinc telluride (ZnTe) on indium tin oxide substrate (ITO) is a quasi-reversible reaction controlled by the diffusion process. The nucleation and growth mechanism follows the instantaneous three-dimensional process according to Scharifker and Hill model. The crystallographic structure and film morphology were studied by XRD and SEM analyses, respectively. ZnTe films have a cubic crystal structure, and they are characterized by good homogeneity. The optical measurements of the deposited films were performed, and a direct energy gap of 2.39eV was determined by UV-visible spectroscopy.

Pentacoordinated Organotin(IV) Complexes as an Alternative in the Design of Highly Efficient Optoelectronic and Photovoltaic Devices: Synthesis and Photophysical Characterization

The synthesis of four pentacoordinated organotin(IV) complexes prepared in a one-pot reaction from 2-hydroxy-1-naphthaldehyde, 2-amino-3-hydroxypyridine and organotin oxides is reported. The complexes were characterized by UV-Vis, IR, MS, 1H, 13C and 119Sn NMR techniques. The compound based on 2,2-diphenyl-6-aza-1,3-dioxa-2-stannanaphtho[1,2-h]pyrido[3,2-d]cyclononene revealed the formation of a monomeric complex with a distorted five-coordinated molecular geometry intermediate between the trigonal bipyramidal and square pyramidal. In order to find possible applications in photovoltaic devices, hybrid films of organotin(IV) complexes embedded in poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) with graphene were deposited. The topographic and mechanical properties were examined. The film with the complex integrated into the cyclohexyl substituent has high plastic deformation, with a maximum stress of 1.69 × 107 Pa and a Knoop hardness of 0.061. The lowest values of 1.85 eV for the onset gap and 3.53 eV for the energy gap were obtained for the heterostructure having the complex with the phenyl substituent. Bulk heterojunction devices were fabricated; these devices showed ohmic behavior at low voltages and a space-charge-limited current (SCLC) conduction mechanism at higher voltages. A value of 0.02 A was found for the maximum carried current. The SCLC mechanism suggests hole mobility values of between 2.62 × 10-2 and 3.63 cm2/V.s and concentrations of thermally excited holes between 2.96 × 1018 and 4.38 × 1018 m-3.

Optoelectronic studies of Copper sulfide selenide (CuSSe) nanorods for its application as a potential absorber layer in photovoltaics

CuSSe nanorods using Polyvinylpyrrolidone (PVP) as a capping agent are synthesized through chemical bath deposition for its fruitful application in photovoltaic devices. A design and simulation of photovoltaic characteristics using CuSSe as a potential absorber layer have been done employing SCAPS-1D. Material properties of CuSSe are optimized prior to simulation. XRD results confirm mixed hexagonal phases of CuSe and CuS in CuSSe nanorods. HRTEM as well as FESEM images clearly exhibit the rod-shaped morphology for CuSSe. The absorption edge is continuously shifted from 476 nm for the Cu50S10Se40 to 826 nm for Cu50S40Se10 and the optical band gap changes up to 1.5eV which is the optimum value for a light absorber layer. The change in absorption edge in CuSSe alloy is attributed to the phase transition of cubic CuSe to hexagonal CuSSe structure. Photoluminescence also shows a sharp reduction of intensity as we decrease the Se/S ratio for the CuSSe nanorods which makes it a suitable active material for the photovoltaic device. The conductivity noticeably enhanced for CuSSe rods over that of CuSe and CuS. Thus for a theoretical approach, a solar cell design Al/MgF2/ZnO: B/i-ZnO/CdS/Cu-S-Se/Mo/Substrate have been made for simulation studies. The J-Vcharacteristics of the simulation show efficiency of 16.58% and 13.49% for the ternary chalcogen of band gap 1.5eV–1.7eV at absorber thickness of 2000 nm. This study thus implies that chemically synthesized CuSSe nanorods may be used as a potential absorber layer for photovoltaic applications.

Carrier Transport Properties in Few-Layer WS0.3Se1.7/(WOx)WS0.3Se1.7 Lateral p+–n Junctions Using a Metal–Oxide–Semiconductor Field-Effect Transistor (MOSFET) Structure

The carrier transport properties of lateral p+–n junctions composed of few-layer WS0.3Se1.7/(WOx)WS0.3Se1.7 on thermally grown SiO2 or high-κ amorphous Al0.74Ti0.26Oy dielectric layers on p+-Si substrates were investigated and analyzed using field-effect transistor structures. Plasma-laser irradiation promoted selective oxidation near the few-layer WS0.3Se1.7 surface and improved the rectification behavior of the current–voltage characteristics. A photocurrent current density (Jph) of 4 × 10–7 A/cm2 was recorded for WS0.3Se1.7/(WOx)WS0.3Se1.7 lateral p+–n junctions under simulated solar-light (AM1.5G) irradiation. Subsequently, improved Jph values of 7.1 × 10–6 (∼17 times) and 1.23 × 10–5 A/cm2 (∼30 times) were obtained by inserting a silver (Ag) back-reflector layer between the amorphous Al0.74Ti0.26Oy dielectric layer and p+-Si and an adding an antireflection (AR) layer of SnO2, respectively. In addition, an enhanced Jph of 1.3 × 10–5 A/cm2 was achieved with a Voc of 0.84 V and an FF of 57% upon applying a gate bias of +12 V. Thus, the photonic and electronic design of lateral p+–n junctions composed of few-layer WS0.3Se1.7/(WOx)WS0.3Se1.7 structures contributes to further research on various types of 2D lateral heterostructures for the application in optoelectronic and photovoltaic devices.

Multilayer α′-4H-borophene growth on gallium arsenide towards high-performance near-infrared photodetector

Multilayer borophene was predicted to have a similar semiconductor property to its monolayer arise from the weak van der Waals interactions between the layers. Besides, multilayer borophene has a higher carrier mobility than monolayer ones, so it is placed great hopes in applications of photoelectric and photovoltaic devices. However, its preparation and application in experiments of multilayer borophene are still lacking. Here, multilayer α′-4H-borophene was synthesized on semiconducting n-type GaAs substrates using NaBH4 source as precursor and hydrogen as the carrier gas under controlled temperature and pressure conditions. The experimental results of the borophene are in good agreement with those of its theoretical prediction. The borophene is a semiconductor with a bandgap of 2.48 eV. To demonstrate the device application potential of the borophene, a near-infrared photodetector composed of p-type borophene and n-type GaAs was fabricated. The photodetector shows a high photoresponsivity of 0.31 mA·W−1, a high specific detectivity of 108 Jones, and a fast response or recovery speed of 117 or 109 ms under the irradiation with the wavelength of 940 nm at zero bias. The results prove that the α′-4H-borophene/GaAs photodetector can show high sensitivity and zero consumption, which is of great value in meeting the appeal of sustainable development of society.

First-principles calculations to investigate electronic structure and optical spectra of CdxZn1-xS ternary semiconductor alloys

The structural parameters, electronic band structure and optical spectra of CdxZn1-xS (0 ≤ x ≤ 1) ternary semiconductor alloys are studied. The calculations are realized using the full potential linearized augmented plane wave method. The modified local density approximation (LDA) and generalized gradient approximation (GGA) have been used for describing the exchange-correlation potential. The obtained results for zinc-blende CdxZn1-xS ternary alloys show a general wellness with the data shown in the literature. An inspection of electronic band structure indicates that zinc-blende CdxZn1-xS are (Г→Г) direct band gap semiconductors (from x = 0 up to x = 1). A predominant ionic type of the chemical bonding in these materials has been indicated. The density of states shows various peaks in both valence and conduction localities proposing that an abundance of conditions is obtainable for occupation. The alloys affect the optical features of interest. The results obtained from the present work show that the zinc-blende CdxZn1-xS is a promettant material for photovoltaic device applications. Moreover, the alloy of interest can be used in different devices from visible to ultraviolet light.

Electronic and optical properties of lead‐free double perovskites A2BCl6 (A = Rb, Cs; B = Si, Ge, Sn) for solar cell applications: A systematic computational study

AbstractIn recent years, lead‐free double perovskite materials have attracted much attention due to their probable applications in photovoltaic and optoelectronic devices. In this work, the electronic and optical properties of lead‐free double perovskites A2BCl6 (A = Rb, Cs; B = Si, Ge, and Sn) are studied using density functional theory (DFT) methodology. The result shows that the highest occupied molecular orbital–lowest unoccupied molecular orbital (HOMO‐LUMO) energy gaps of these compounds vary between 0.524 and 0.919 eV, which agrees with the previously reported data. HOMO‐LUMO gap for Rb2SiCl6 is observed as 0.919 eV, which falls in the optimal energy gap range, that is, 0.9 to 1.6 eV for double perovskite material. Conceptual DFT‐based descriptors—molecular hardness, softness, electronegativity, electrophilicity index, and dipole moment of these compounds—are studied. The tolerance factor of A2BCl6 is observed in the range of 1.00 to 1.26. Rb2SnCl6 is almost a perfect fit with a value of 1.00. Cs2SiCl6 shows the maximum value of the refractive index and dielectric constant. Optical electronegativity is found between 0.178 and 0.246 eV. The suitable band gap and high value of the refractive index and dielectric constant make double perovskites A2BCl6 effective for solar cells and optoelectronic devices.

Tuning anatase to rutile ratio in nanocrystalline titania enriched from sustainable beach sand from Cox's Bazar, Bangladesh

A sustainable source of titania (TiO2) is important in applications of photovoltaic devices, photocatalysts, sensors, and so forth. Beach sand from Cox's Bazar, Bangladesh, can be an excellent sustainable source of this titania as almost a quarter of it contains titania in the form of rutile and ilmenite. This study demonstrates the success of a sulfuric acid‐based hydrometallurgical process in enriching titania in Cox's Bazar beach sand. The route produces precursors that can be conveniently calcined into nanocrystalline phase‐pure anatase or anatase/rutile composites. We used both bulk and surface characterization to determine phase purity, crystallite size as well as surface chemistry, and morphology of the resulting anatase and rutile/anatase mixture. The proportion of anatase/rutile can be tuned by varying digestion times. This hydrometallurgical route can potentially lead to the scalable production of precursors used in producing high‐performance nanocrystalline titania from a sustainable source of beach sand from Cox's Bazar of Bangladesh.

Defect Passivation Results in the Stability of Cesium Lead Halide Perovskite Nanocrystals

Nanoheterostructures (NHSs) based on lead halide perovskites (LHPs) and chalcogenide quantum dots have proved to be promising candidates for photovoltaic device applications. However, understanding the defect chemistry at the interfaces of LHPs and chalcogenides is essential to stabilize them and further tune their optoelectronic properties. Here, we demonstrate a route for designing CsPbBr3–PbSe NHSs and other derivatives of LHP-based NHSs using defect-rich MoSe2 nanosheets (NSs) and study the effect of the size of PbSe NPs on their optical properties. In this synthesis route, PbSe nanoparticles (NPs) are formed at an early stage of the reaction through a unique cation displacement reaction, over which CsPbBr3 nanocrystals (NCs) are epitaxially grown. Using this methodology, a nearly 3-fold enhancement in photoluminescence (PL) is achieved, whereas other selenium precursors, which form larger PbSe NPs, result in negligible PL enhancement with respect to the pure CsPbBr3 NCs. Detailed density functional theory (DFT) calculations suggest that the PbSe NPs are responsible for passivating the surface defects that consequently enhance the PL intensity. However, in the case of larger PbSe NPs, the associated valence and conduction bands lie within the band-gap region of CsPbBr3, creating a type-I heterostructure between the two materials, thereby affecting the luminescence properties. Strong passivation of surface defects in CsPbBr3–PbSe NHSs is also evidenced from low-temperature PL studies. Furthermore, the resulting CsPbBr3–PbSe NHSs demonstrate enhanced stability in the presence of water and do not degrade under ambient conditions for several months.

Synthesis of sol-gel synthesized ZnO-CdO nanocomposite for photovoltaic applications

Nanocomposites comprising semiconductor materials hold immense potential for advancing photovoltaic technologies due to their unique optoelectronic properties. This research focuses on the synthesis and characterization of a ZnO-CdO (zinc oxide and cadmium oxide) nanocomposite using the sol-gel method for potential application in photovoltaic devices. The sol-gel approach provides a versatile platform for tailoring material properties to enhance photovoltaic performance. The structural, morphological, and optical characteristics of the ZnO-CdO nanocomposite were extensively analyzed using techniques including X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and UV-visible spectroscopy. The XRD analysis confirmed the crystalline nature of the nanoparticles and assessed potential changes in their crystal structure upon nanocomposite formation. SEM and TEM images provided insights into particle size, shape, and distribution, corroborating successful nanocomposite fabrication. This study underscores the significance of sol-gel synthesis in tailoring semiconductor nanocomposites for photovoltaic applications. The characterized structural, optical, and photovoltaic properties provide a foundation for further optimization and integration into advanced photovoltaic devices.

Design of Imide Oligomer-Mediated MOF Clusters for Solar Cell Encapsulation Systems by Interface Fusion Strategy.

Dielectric encapsulation materials are promising for solar cell areas, but the unsatisfactory light-management capability and relatively poor dielectric properties restrict their further applications in photovoltaic and microelectronic devices. Herein, an interface fusion strategy to engineer the interface of MOF (UiO-66-NH2 ) with anhydride terminated imide oligomer (6FDA-TFMB) is designed and a novel MOF cluster (UFT) with enhanced forward scattering and robust porosity is prepared. UFT is applied as an optical and dielectric modifier for bisphenol A epoxy resin (DGEBA), and UFT epoxy composites with high transmittance (>80%), tunable haze (45-58%) and excellent dielectric properties can be prepared at low UFT contents (0.5-1 wt%), which delivers an optimal design for dielectric encapsulation systems with efficient light management in solar cells. Additionally, UFT epoxy composites also show excellent UV blocking, and hydrophobic, thermal and mechanical properties. This work provides a template for the synthesis of covalent bond-mediated nanofillers and for the modulation of haze and dielectric properties of dielectric encapsulation materials for energy systems, semiconductors, microelectronics, and more.

Wafer-Scale Fabrication of Ultra-High Aspect Ratio, Microscale Silicon Structures with Smooth Sidewalls Using Metal Assisted Chemical Etching.

Silicon structures with ultra-high aspect ratios have great potential applications in the fields of optoelectronics and biomedicine. However, the slope and increased roughness of the sidewalls inevitably introduced during the use of conventional etching processes (e.g., Bosch and DRIE) remain an obstacle to their application. In this paper, 4-inch wafer-scale, ultra-high aspect ratio (>140:1) microscale silicon structures with smooth sidewalls are successfully prepared using metal-assisted chemical etching (MacEtch). Here, we clarify the impact of the size from the metal catalytic structure on the sidewall roughness. By optimizing the etchant ratio to accelerate the etch rate of the metal-catalyzed structure and employing thermal oxidation, the sidewall roughness can be significantly reduced (average root mean square (RMS) from 42.3 nm to 15.8 nm). Simulations show that a maximum exciton production rate (Gmax) of 1.21 × 1026 and a maximum theoretical short-circuit current density (Jsc) of 39.78 mA/cm2 can be obtained for the micropillar array with smooth sidewalls, which have potential applications in high-performance microscale photovoltaic devices.

Band gap engineering and optoelectronic properties of all-inorganic Ruddlesden-Popper halide perovskites Cs2B(X1-uYu)4 (B = Pb, Sn; X/Y = Cl, Br, I)

In this article two-dimensional Ruddlesden-Popper (2DRP) halide perovskites Cs2B(X1-uYu)4 where B = Pb, Sn; X/Y = Cl, Br, I; and u = 0, 0.25, 0.5, 0.75, 1 are investigated for potential applications in optoelectronic, photoemission and photovoltaic devices. In these compounds the corner sharing B-centered [BX2Y4]4- units build the 2D [BX2Y2]n2n− plane, where the halides occupy the in-plane bridging and out of plane apical site respectively, while the spacer cation (Cs+) balancing the charge and separate the octahedral layers. These compounds have direct band gaps and spin orbit (SOC) calculations split Pb/Sn p-orbital and reduce the band gaps. The wide (1.04–3.45) and direct band gaps enable these materials for futuristic applications in optoelectronics, high speed ultrathin transistors and photodetectors. The anti-bonding lone-pair Pb/Sn-s orbital at the valence band edge is excellent for light absorption and photovoltaic performance. These compounds are good dielectric and optically functional materials for photovoltaic and energy storage devices due to their small values of charge carrier effective masses and large exciton binding energies. Therefore, the optical coefficients like dielectric function (real and imaginary), absorption coefficient and index of refraction are calculated.

Recent progress in the stabilization of low band-gap black-phase iodide perovskite solar cells.

All-inorganic and organic-inorganic hybrid perovskite solar cells (PSCs) have taken a quantum leap owing to their high performance and low-cost solution processability. Their efficiency has been dramatically increased up to ∼26%, matching the conventional inorganic photovoltaics like monocrystalline Si (26.1%), polycrystalline Si (21.6%), CdTe (22.1%), and CIGS (22.3%). Such outstanding performance has been achieved due to their excellent optoelectronic properties, such as a direct bandgap in the visible region, a very high absorption coefficient, a long charge-carrier diffusion length, and ambipolar carrier transport characteristics. FAPbI3 (FA = formamidinium) and CsPbI3 perovskites among the pool of perovskites are recommended for solar cell applications because they meet all the requirements for photovoltaic applications. However, the fundamental problem of these perovskites is that their photoactive black phase is highly unstable under ambient conditions due to small and large sizes of Cs+ and FA+ ions, respectively. The instability of the black phase of these perovskites hinders their applications in photovoltaic devices as a high-quality light absorber layer. Several approaches have been employed to prevent the formation of the photo-inactive yellow phase or to enhance the stability of the black phase of perovskites, such as dimensional and compositional engineering, the addition of external additives, and dimensional engineering. This perspective summarizes the various methods for stabilizing the black phase of CsPbI3 and FAPbI3 perovskites at room temperature as well as their application in photovoltaic devices.

Tb- and Eu-doped yttrium oxyselenides as novel absorber layers for superstrate thin-film photovoltaics: improved spectral optical absorption and green-red phosphor activation.

To generate and deliver alternative sustainable energy in the face of the current energy crisis, new materials that can capture solar energy and transform it into other useful energies are required. Rare-earth (RE) oxychalcogenides are now being used more frequently as up/down-conversion materials in established photovoltaic (PV) devices to boost their PV performance. Here, through an efficient microwave assisted synthesis procedure, novel nanoplate/sheet shaped nanomaterials of yttrium oxyselenide (YOSe) and its analogues doped with Tb and Eu (YOSe:Tb and YOSe:Eu) were successfully synthesized. Analyses of the structure, stability, morphology, light absorption, and electrochemistry were performed. This work showed that the parent YOSe exhibited green (543 nm) and red (615 nm) emission luminescence when doped with Tb and Eu with a luminescence quantum yield (LQY) of 0.56 and 0.53 for YOSe:Tb and YOSe:Eu nanomaterials, respectively. The surface and material conductivity of YOSe improved with the addition of the dopant elements, with the best outcome shown in YOSe:Eu, according to electrokinetic research evidenced by the enhanced current peaks, reduced charge-transfer resistance (Rct) and low impedance magnitude (Zmag) through electrochemical experiments. These improvements were induced by the distinctive properties of the dopant elements. PCEs of 0.25%, 0.67%, and 1.20% were obtained for YOSe, YOSe:Tb, and YOSe:Eu-based PV devices, respectively, using the nanomaterials as novel absorber layers in a superstrate device design. Our results can initiate further exploitation of the doped host structure for effective down-conversion NIR luminescence for applications in PV devices and to boost the PV performance of existing solar cells.