Antiferromagnetic Switching Research Articles

Ultrafast antiferromagnetic switching of Mn2Au with laser-induced optical torques

Ultrafast manipulation of the Néel vector in metallic antiferromagnets most commonly occurs by generation of spin-orbit (SOT) or spin-transfer (STT) torques. Here, we predict another possibility for antiferromagnetic domain switching by using novel laser optical torques (LOTs). We present results of atomistic spin dynamics simulations from the application of LOTs for all-optical switching of the Néel vector in the antiferromagnet Mn2Au. The driving mechanism takes advantage of the sizeable exchange enhancement, characteristic of antiferromagnetic dynamics, allowing for picosecond 90 and 180-degree precessional toggle switching of the Néel vector with laser fluences on the order of mJ/cm2. A special symmetry of these novel torques greatly minimises the over-shooting effect common to precessional spin switching by SOT and STT methods. We demonstrate the opportunity for LOTs to produce deterministic, non-toggle switching of single antiferromagnetic domains. Lastly, we show that even with sizeable ultrafast heating by laser in metallic systems, there exist a large interval of laser parameters where the LOT-assisted toggle and preferential switchings in magnetic grains have probabilities close to one. The proposed protocol could be used on its own for all-optical control of antiferromagnets for computing or memory storage, or in combination with other switching methods to lower energy barriers and/or to prevent over-shooting of the Néel vector.

Electrical 180° switching of Néel vector in spin-splitting antiferromagnet.

Antiferromagnetic spintronics have attracted wide attention due to its great potential in constructing ultradense and ultrafast antiferromagnetic memory that suits modern high-performance information technology. The electrical 180° switching of Néel vector is a long-term goal for developing electrical-controllable antiferromagnetic memory with opposite Néel vectors as binary "0" and "1." However, the state-of-art antiferromagnetic switching mechanisms have long been limited for 90° or 120° switching of Néel vector, which unavoidably require multiple writing channels that contradict ultradense integration. Here, we propose a deterministic switching mechanism based on spin-orbit torque with asymmetric energy barrier and experimentally achieve electrical 180° switching of spin-splitting antiferromagnet Mn5Si3. Such a 180° switching is read out by the Néel vector-induced anomalous Hall effect. On the basis of our writing and readout methods, we fabricate an antiferromagnet device with electrical-controllable high- and low-resistance states that accomplishes robust write and read cycles. Besides fundamental advance, our work promotes practical spin-splitting antiferromagnetic devices based on spin-splitting antiferromagnet.

Mechanisms of Electrical Switching of Ultrathin CoO/Pt Bilayers.

We study current-induced switching of the Néel vector in CoO/Pt bilayers to understand the underlying antiferromagnetic switching mechanism. Surprisingly, we find that for ultrathin CoO/Pt bilayers electrical pulses along the same path can lead to an increase or decrease of the spin Hall magnetoresistance signal, depending on the current density of the pulse. By comparing these results to XMLD-PEEM imaging of the antiferromagnetic domain structure before and after the application of current pulses, we reveal the details of the reorientation of the Néel vector in ultrathin CoO(4 nm). This allows us to understand how opposite resistance changes can result from a thermomagnetoelastic switching mechanism. Importantly, our spatially resolved imaging shows that regions where the current pulses are applied and regions further away exhibit different switched spin structures, which can be explained by a spin-orbit torque-based switching mechanism that can dominate in very thin films.

Photocurrents, inverse Faraday effect, and photospin Hall effect in Mn2Au

Among antiferromagnetic materials, Mn2Au is one of the most intensively studied, and it serves as a very popular platform for testing various ideas related to antiferromagnetic magnetotransport and dynamics. Since recently, this material has also attracted considerable interest in the context of optical properties and optically-driven antiferromagnetic switching. In this work, we use first principles methods to explore the physics of charge photocurrents, spin photocurrents, and the inverse Faraday effect in antiferromagnetic Mn2Au. We predict the symmetry and magnitude of these effects and speculate that they can be used for tracking the dynamics of staggered moments during switching. Our calculations reveal the emergence of large photocurrents of spin in collinear Mn2Au, whose properties can be understood as a result of a non-linear optical version of the spin Hall effect, which we refer to as the photospin Hall effect, encoded into the relation between the driving charge and resulting spin photocurrents. Moreover, we suggest that even a very small canting in Mn2Au can give rise to colossal spin photocurrents that are chiral in flavor. We conclude that the combination of staggered magnetization with the structural and electronic properties of this material results in a unique blend of prominent photocurrents, which makes Mn2Au a unique platform for advanced optospintronics applications.

Disentangling electrical switching of antiferromagnetic NiO using high magnetic fields

Recent demonstrations of the electrical switching of antiferromagnets (AFs) have given an enormous impulse to the field of AF spintronics. Many of these observations are plagued by non-magnetic effects that are very difficult to distinguish from the actual magnetic ones. Here, we study the electrical switching of thin (5 nm) NiO films in Pt/NiO devices using magnetic fields up to 15 T to quantitatively disentangle these magnetic and non-magnetic effects. We demonstrate that these fields suppress the magnetic components of the electrical switching of NiO, but leave the non-magnetic components intact. Using a monodomainization model the contributions are separated, showing how they behave as a function of the current density. These results show that combining electrical methods and strong magnetic fields can be an invaluable tool for AF spintronics, allowing for implementing and studying electrical switching of AFs in more complex systems.

Spin-transfer and spin-orbit torques in the Landau–Lifshitz–Gilbert equation

Dynamic simulations of spin-transfer and spin-orbit torques are increasingly important for a wide range of spintronic devices including magnetic random access memory, spin-torque nano-oscillators and electrical switching of antiferromagnets. Here we present a computationally efficient method for the implementation of spin-transfer and spin-orbit torques within the Landau–Lifshitz–Gilbert equation used in micromagnetic and atomistic simulations. We consolidate and simplify the varying terminology of different kinds of torques into a physical action and physical origin that clearly shows the common action of spin torques while separating their different physical origins. Our formalism introduces the spin torque as an effective magnetic field, greatly simplifying the numerical implementation and aiding the interpretation of results. The strength of the effective spin torque field unifies the action of the spin torque and subsumes the details of experimental effects such as interface resistance and spin Hall angle into a simple transferable number between numerical simulations. We present a series of numerical tests demonstrating the mechanics of generalised spin torques in a range of spintronic devices. This revised approach to modelling spin-torque effects in numerical simulations enables faster simulations and a more direct way of interpreting the results, and thus it is also suitable to be used in direct comparisons with experimental measurements or in a modelling tool that takes experimental values as input.

Direct visualization and control of antiferromagnetic domains and spin reorientation in a parent cuprate

We report magnetic optical second-harmonic generation (SHG) polarimetry and imaging on Sr$_2$Cu$_3$O$_4$Cl$_2$, which allows direct visualization of the mesoscopic antiferromagnetic (AFM) structure of a parent cuprate. Temperature- and magnetic-field-dependent SHG reveals large domains with 90$^{\circ}$ relative orientations that are stabilized by a combination of uniaxial magnetic anisotropy and the Earth's magnetic field. Below a temperature $T_R$ $\sim$ 97 K, we observe an unusual 90$^{\circ}$ spin reorientation transition, possibly driven by competing magnetic anisotropies of the two copper sublattices, which swaps the AFM domain states while preserving the domain structure. This allows deterministic switching of the AFM states by thermal or laser heating. Near $T_R$, the domain walls become exceptionally responsive to an applied magnetic field, with the Earth's field sufficient to completely expel them from the crystal. Our findings unlock opportunities to study the mesoscopic AFM behavior of parent cuprates and explore their potential for AFM technologies.

Control of Néel Vector with Spin-Orbit Torques in an Antiferromagnetic Insulator with Tilted Easy Plane.

Injecting spin currents into antiferromagnets and realizing efficient spin-orbit-torque switching represents a challenging topic. Because of the diminishing magnetic susceptibility, current-induced antiferromagnetic dynamics remain poorly characterized, complicated by spurious effects. Here, by growing a thin film antiferromagnet, α-Fe_{2}O_{3}, along its nonbasal plane orientation, we realize a configuration where the spin-orbit torque from an injected spin current can unambiguously rotate and switch the Néel vector within the tilted easy plane, with an efficiency comparable to that of classical ferrimagnetic insulators. Our study introduces a new platform for quantitatively characterizing switching and oscillation dynamics in antiferromagnets.

Third harmonic characterization of antiferromagnetic heterostructures

Electrical switching of antiferromagnets is an exciting recent development in spintronics, which promises active antiferromagnetic devices with high speed and low energy cost. In this emerging field, there is an active debate about the mechanisms of current-driven switching of antiferromagnets. For heavy-metal/ferromagnet systems, harmonic characterization is a powerful tool to quantify current-induced spin-orbit torques and spin Seebeck effect and elucidate current-induced switching. However, harmonic measurement of spin-orbit torques has never been verified in antiferromagnetic heterostructures. Here, we report harmonic measurements in Pt/α-Fe2O3 bilayers, which are explained by our modeling of higher-order harmonic voltages. As compared with ferromagnetic heterostructures where all current-induced effects appear in the second harmonic signals, the damping-like torque and thermally-induced magnetoelastic effect contributions in Pt/α-Fe2O3 emerge in the third harmonic voltage. Our results provide a new path to probe the current-induced magnetization dynamics in antiferromagnets, promoting the application of antiferromagnetic spintronic devices.

Current-induced N\xe9el order switching facilitated by magnetic phase transition

Terahertz (THz) spin dynamics and vanishing stray field make antiferromagnetic (AFM) materials the most promising candidate for the next-generation magnetic memory technology with revolutionary storage density and writing speed. However, owing to the extremely large exchange energy barriers, energy-efficient manipulation has been a fundamental challenge in AFM systems. Here, we report an electrical writing of antiferromagnetic orders through a record-low current density on the order of 106 A cm−2 facilitated by the unique AFM-ferromagnetic (FM) phase transition in FeRh. By introducing a transient FM state via current-induced Joule heating, the spin-orbit torque can switch the AFM order parameter by 90° with a reduced writing current density similar to ordinary FM materials. This mechanism is further verified by measuring the temperature and magnetic bias field dependences, where the X-ray magnetic linear dichroism (XMLD) results confirm the AFM switching besides the electrical transport measurement. Our findings demonstrate the exciting possibility of writing operations in AFM-based devices with a lower current density, opening a new pathway towards pure AFM memory applications.

Terahertz pulse-induced Néel vector switching in α-Fe2O3/Pt heterostructures

The increasing interest in antiferromagnetic electronics is driven by the vision of the operation in the terahertz regime and ultrahigh density memories. The use of a terahertz wave to scale up the writing speed to terahertz has been reported in the antiferromagnetic single layer CuMnAs with sublattice symmetry broken. Here, a reversible and reproducible switching in antiferromagnetic insulators α-Fe2O3 is achieved in α-Fe2O3/Pt heterostructures by a terahertz wave pulse, and the switching capability is consistent with the current pulse-induced switching counterpart. The temperature variation during the terahertz pulse is simulated by finite element simulation analysis, for extreme (∼1.5 ps) short terahertz pulses, the thermal effect can be negligible and the mechanism responsible for the terahertz pulse-induced antiferromagnetic switching points to the dampinglike spin–orbit torque. Our finding paves the way for the antiferromagnet/heavy metal bilayers for ultrahigh density memories and high-frequency devices up to terahertz operation.

Antiferromagnetic switching driven by the collective dynamics of a coexisting spin glass

The theory behind the electrical switching of antiferromagnets is premised on the existence of a well-defined broken symmetry state that can be rotated to encode information. A spin glass is, in many ways, the antithesis of this state, characterized by an ergodic landscape of nearly degenerate magnetic configurations, choosing to freeze into a distribution of these in a manner that is seemingly bereft of information. Here, we show that the coexistence of spin glass and antiferromagnetic order allows a novel mechanism to facilitate the switching of the antiferromagnet Fe1/3 + δNbS2, rooted in the electrically stimulated collective winding of the spin glass. The local texture of the spin glass opens an anisotropic channel of interaction that can be used to rotate the equilibrium orientation of the antiferromagnetic state. Manipulating antiferromagnetic spin textures using a spin glass' collective dynamics opens the field of antiferromagnetic spintronics to new material platforms with complex magnetic textures.

Direct Imaging of Current-Induced Antiferromagnetic Switching Revealing a Pure Thermomagnetoelastic Switching Mechanism in NiO.

We unravel the origin of current-induced magnetic switching of insulating antiferromagnet/heavy metal systems. We utilize concurrent transport and magneto-optical measurements to image the switching of antiferromagnetic domains in specially engineered devices of NiO/Pt bilayers. Different electrical pulsing and device geometries reveal different final states of the switching with respect to the current direction. We can explain these through simulations of the temperature-induced strain, and we identify the thermomagnetoelastic switching mechanism combined with thermal excitations as the origin, in which the final state is defined by the strain distributions and heat is required to switch the antiferromagnetic domains. We show that such a potentially very versatile noncontact mechanism can explain the previously reported contradicting observations of the switching final state, which were attributed to spin-orbit torque mechanisms.

Systematic study of nonmagnetic resistance changes due to electrical pulsing in single metal layers and metal/antiferromagnet bilayers

Intense current pulses are often required to operate microelectronic and spintronic devices. Notably, strong current pulses have been shown to induce magnetoresistance changes attributed to domain reorientation in antiferromagnet/heavy metal bilayers and non-centrosymmetric antiferromagnets. In such cases, nonmagnetic resistivity changes may dominate over signatures of antiferromagnetic switching. We report systematic measurements of the current-induced changes of the transverse and longitudinal resistance of Pt and Pt/NiO layers deposited on insulating substrates, namely, Si/SiO2, Si/Si3N4, and Al2O3. We identify the range of pulse amplitude and length that can be used without affecting the resistance and show that it increases with the device size and thermal diffusivity of the substrate. No significant difference is observed in the resistive response of Pt and NiO/Pt devices, thus precluding evidence on the switching of antiferromagnetic domains in NiO. The variation of the transverse resistance is associated to a thermally activated process in Pt that decays following a double exponential law with characteristic timescales of a few minutes to hours. We use a Wheatstone bridge model to discriminate between positive and negative resistance changes, highlighting competing annealing and electromigration effects. Depending on the training of the devices, the transverse resistance can either increase or decrease between current pulses. Furthermore, we elucidate the origin of the nonmonotonic resistance baseline, which we attribute to training effects combined with the asymmetric distribution of the current. These results provide insight into the origin of current-induced resistance changes in metal layers and a guide to minimize nonmagnetic artifacts in switching experiments of antiferromagnets.

Ultrafast antiferromagnetic switching in NiO induced by spin transfer torques

NiO is a prototypical antiferromagnet with a characteristic resonance frequency in the THz range. From atomistic spin dynamics simulations that take into account the crystallographic structure of NiO, and in particular a magnetic anisotropy respecting its symmetry, we describe antiferromagnetic switching at THz frequency by a spin transfer torque mechanism. Sub-picosecond S-state switching between the six allowed stable spin directions is found for reasonably achievable spin currents, like those generated by laser induced ultrafast demagnetization. A simple procedure for picosecond writing of a six-state memory is described, thus opening the possibility to speed up current logic of electronic devices by several orders of magnitude.

Concurrent magneto-optical imaging and magneto-transport readout of electrical switching of insulating antiferromagnetic thin films

We demonstrate stable and reversible current induced switching of large-area (>100 μm2) antiferromagnetic domains in NiO/Pt by performing concurrent transport and magneto-optical imaging measurements in an adapted Kerr microscope. By correlating the magnetic images of the antiferromagnetic domain changes and magneto-transport signal response in these current-induced switching experiments, we disentangle magnetic and non-magnetic contributions to the transport signal. Our table-top approach establishes a robust procedure to subtract the non-magnetic contributions in the transport signal and extract the spin-Hall magnetoresistance response associated with the switching of the antiferromagnetic domains, enabling one to deduce details of the antiferromagnetic switching from simple transport measurements.

Giant magnetoresistance in antiferromagnetic Mn2Au-based tunnel junction

Recent studies on the electrical switching of tetragonal antiferromagnet (AFM) via Neel spin-orbit torque have paved the way for the economic use of antiferromagnetic materials. The most difficult obstacle that presently limits the application of antiferromagnetic materials in spintronics, especially in memory storage applications, could be the small and fragile magnetoresistance (MR) in the AFM-based nanostructure. In this study, we investigated the spin transports in Mn$_2$Au-based tunnel junctions based on the first-principle scattering theory. Giant MRs more than $1000%$ are predicted in some Fe/MgO/Ag/Mn$_2$Au/Ta junctions that are about the same order as that in an MgO-based ferromagnetic tunnel junction with same barrier thickness. The interplay of the spin filtering effect, the quantum well resonant states, and the interfacial resonant states could be responsible for the unusual giant and robust MRs observed in these Mn$_2$Au-based junctions.

Berry curvature engineering by gating two-dimensional antiferromagnets

Recent advances in tuning electronic, magnetic, and topological properties of two-dimensional (2D) magnets have opened a new frontier in the study of quantum physics and promised exciting possibilities for future quantum technologies. In this study, we find that the dual-gate technology can well tune the electronic and topological properties of antiferromagnetic (AFM) even septuple-layer (SL) MnBi$_2$Te$_4$ thin films. Under an out-of-plane electric field that breaks $\mathcal{PT}$ symmetry, the Berry curvature of the thin film could be engineered efficiently, resulting in a huge change of anomalous Hall (AH) signal. Beyond the critical electric field, the double-SL MnBi$_2$Te$_4$ thin film becomes a Chern insulator with a high Chern number of 3. We further demonstrate that such 2D material can be used as an AFM switch via electric-field control of the AH signal. These discoveries inspire the design of low-power memory prototype for future AFM spintronic applications.

Spin-orbit torque induced electrical switching of antiferromagnetic MnN

Electrical switching and readout of antiferromagnets allows to exploit the unique properties of antiferromagnetic materials in nanoscopic electronic devices. Here we report experiments on the spin-orbit torque induced electrical switching of a polycrystalline, metallic antiferromagnet with low anisotropy and high N\'eel temperature. We demonstrate the switching in a Ta / MnN / Pt trilayer system, deposited by (reactive) magnetron sputtering. The dependence of switching amplitude, efficiency, and relaxation are studied with respect to the MnN film thickness, sample temperature, and current density. Our findings are consistent with a thermal activation model and resemble to a large extent previous measurements on CuMnAs and Mn$_2$Au, which exhibit similar switching characteristics due to an intrinsic spin-orbit torque.

Electrical Switching of Tristate Antiferromagnetic Néel Order in α-Fe_{2}O_{3} Epitaxial Films.

We demonstrate nondecaying, steplike electrical switching of tristate Néel order in Pt/α-Fe_{2}O_{3} bilayers detected by the spin-Hall induced anomalous Hall effect. The as-grown Pt/α-Fe_{2}O_{3} bilayers exhibit sawtooth switching behavior generated by current pulses. After annealing by a high pulse current, the Hall signals reveal single-pulse saturated, nondecaying, steplike switching. Together with control experiments, we show that the sawtooth switching is due to an artifact of Pt while the actual spin-orbit torque induced antiferromagnetic switching is steplike. Our MonteCarlo simulations explain the switching behavior of α-Fe_{2}O_{3} Néel order among three in-plane easy axes.