Antiferromagnetic Insulator Research Articles

Atomistic Origins of Conductance Switching in an ε-Cu0.9V2O5 Neuromorphic Single Crystal Oscillator.

Building artificial neurons and synapses is key to achieving the promise of energy efficiency and acceleration envisioned for brain-inspired information processing. Emulating the spiking behavior of biological neurons in physical materials requires precise programming of conductance nonlinearities. Strong correlated solid-state compounds exhibit pronounced nonlinearities such as metal-insulator transitions arising from dynamic electron-electron and electron-lattice interactions. However, a detailed understanding of atomic rearrangements and their implications for electronic structure remains obscure. In this work, we unveil discontinuous conductance switching from an antiferromagnetic insulator to a paramagnetic metal in ε-Cu0.9V2O5. Distinctively, fashioning nonlinear dynamical oscillators from entire millimeter-sized crystals allows us to map the structural transformations underpinning conductance switching at an atomistic scale using single-crystal X-ray diffraction. We observe superlattice ordering of Cu ions between [V4O10] layers at low temperatures, a direct result of interchain Cu-ion migration and intrachain reorganization. The resulting charge and spin ordering along the vanadium oxide framework stabilizes an insulating state. Using X-ray absorption and emission spectroscopies, assigned with the aid of electronic structure calculations and measurements of partially and completely decuprated samples, we find that Cu 3d and V 3d orbitals are closely overlapped near the Fermi level. The filling and overlap of these states, specifically the narrowing/broadening of V 3dxy states near the Fermi level, mediate conductance switching upon Cu-ion rearrangement. Understanding the mechanisms of conductance nonlinearities in terms of ion motion along specific trajectories can enable the atomistic design of neuromorphic active elements through strategies such as cointercalation and site-selective modification.

Designing van der Waals layers for ferromagnetic quantum spin Hall phase

Most theoretically predicted and experimentally confirmed quantum spin Hall effects (QSHEs) are limited to zero-moment magnets. In this study, we theoretically anticipate the QSHE in ferromagnets and the quantum anomalous Hall effect (QAHE) in antiferromagnets through van der Waals stacked layers, where the magnetization direction is confined to the in-plane. We introduce a search rule for constructing ferromagnetic (FM) quantum spin Hall insulator (QSHI) and antiferromagnetic (AFM) quantum anomalous Hall insulator (QAHI) and further predict a real material of the LuN2/GaS/LuN2 van der Waals multilayer by first-principles calculations. Our results demonstrate the superposition and elimination of Chern numbers under mirror symmetry and time-reversal symmetry, and they further indicate that FM QSHI and AFM QAHI can be converted through deflection magnetization. These findings broaden the material class for QSHE and QAHE and propose a scheme for constructing FM QSHI and AFM QAHI.

Magnetic-Electrical Synergetic Control of Non-Volatile States in Bilayer Graphene-CrOCl Heterostructures.

Anti-ferromagnetic insulator chromium oxychloride (CrOCl) has shown peculiar charge transfer and correlation-enhanced emerging properties when interfaced with other van der Waals conductive channels. However, the influence of its spin states to the channel material remains largely unknown. Here, this issue is addressed by directly measuring the density of states in bilayer graphene (BLG) interfaced with CrOCl via a high-precision capacitance measurement technique and a surprising hysteretic behavior in the charging states of the heterostructure is observed. Such hysteretic behavior depends only on the history of magnetization, but not on the history of electrical gating; it can also be turned off electrically, providing a synergetic control of these non-volatile states. First-principles calculations attribute this observation to magnetic field-controlled charge transfer between BLG and CrOCl during the phase transition of CrOCl from antiferromagnetic (AFM) to ferrimagnetic-like (FiM) states. This magnetic-electrical synergetic control mechanism broadens the scope of proximity effects and opens new possibilities for the design of advanced 2D heterostructures and devices.

Field‐Free Spin‐Orbit Torque Switching in Perpendicularly Magnetized Ta/CoFeB/MgO/NiO/Ta with a Canted Antiferromagnetic Insulator NiO Interlayer

AbstractIn this study, deterministic current‐induced spin‐orbit torque (SOT) magnetization switching is achieved, particularly in systems with perpendicular magnetic anisotropy (PMA), without the need for a collinear in‐plane field, a traditionally challenging requirement. In a Ta/CoFeB/MgO/NiO/Ta structure, spin reflection at the MgO/NiO interface generates a spin current with an out‐of‐plane spin polarization component σz. Notably, the sample featuring 0.8 nm MgO and 2 nm NiO demonstrates an impressive optimal switching ratio approaching 100% without any in‐plane field. A systematic investigation of the effects of the MgO and NiO thickness demonstrates that the formation of noncollinear spin structures and canted magnetization in the ultrathin NiO interlayer plays a pivotal role to the field‐free SOT switching. The integration of NiO as an antiferromagnetic insulator effectively mitigates current shunting effects and enhances the thermal stability of the device. This advancement in the CoFeB/MgO system holds promise for significant applications in spintronics, marking a crucial step toward realizing innovative technologies.

Imprinted atomic displacements drive spin–orbital order in a vanadate perovskite

AbstractPerovskites with the generic composition ABO3 exhibit an enormous variety of quantum states, such as orbital order, magnetism and superconductivity. Their flexible and comparatively simple structure allows for straightforward chemical substitution and cube-on-cube combination of different compounds in atomically sharp epitaxial heterostructures. Many of the diverse physical properties of perovskites are determined by small deviations from the ideal cubic perovskite structure, which are challenging to control. Here we show that directional imprinting of atomic displacements in the antiferromagnetic Mott insulator YVO3 can be achieved by depositing epitaxial films on different facets of the same isostructural substrate. These facets were chosen such that other well-known control parameters, including lattice and polarity mismatch with the overlayer, remain nearly unchanged. We observe signatures of staggered orbital and magnetic order and demonstrate distinct spin–orbital ordering patterns on different facets. We attribute these results to the influence of specific octahedral rotation and cation displacement patterns, which are imprinted by the substrate facet, on the covalency of the bonds and the superexchange interactions in YVO3. Our results show that substrate-induced templating of lattice distortion patterns constitutes a pathway for materials design beyond established strain-engineering strategies.

Sr-Doping-Modulated Metal-Insulator Transition in NdNiO3 Epitaxial Films

Abstract Perovskite-structured nickelates, ReNiO3 (Re = rare earth), have long garnered significant research interest due to their sharp and highly tunable metal-insulator transitions (MITs). Doping the parent compound ReNiO3 with alkaline earth metal can substantially suppress this MIT. Recently, intriguing superconductivity has been discovered in doped infinite-layer nickelates (ReNiO2), while the mechanism behind A-site doping-suppressed MIT in the parent compound ReNiO3 remains unclear. To address this problem, we grew a series of Nd1−x Sr x NiO3 (NSNO, x = 0–0.2) thin films and conducted systematic electrical transport measurements. Our resistivity and Hall measurements suggest that Sr-induced excessive holes are not the primary reason for MIT suppression. Instead, first-principles calculations indicate that Sr cations, with larger ionic radius, suppress breathing mode distortions and promote charge transfer between oxygen and Ni cations. This process weakens Ni–O bond disproportionation and Ni2+/Ni4+ charge disproportionation. Such significant modulations in lattice and electronic structures convert the ground state from a charge-disproportionated antiferromagnetic insulator to a paramagnetic metal, thereby suppressing the MIT. This scenario is further supported by the weakened MIT observed in the tensile-strained NSNO/SrTiO3(001) films. Our work reveals the A-side doping-modulated electrical transport of perovskite nickelate films, providing deeper insights into novel electric phases in these strongly correlated nickelate systems.

Prediction of metal-free Stoner and Mott-Hubbard magnetism in triangulene-based two-dimensional polymers.

Ferromagnetism and antiferromagnetism require robust long-range magnetic ordering, which typically involves strongly interacting spins localized at transition metal atoms. However, in metal-free systems, the spin orbitals are largely delocalized, and weak coupling between the spins in the lattice hampers long-range ordering. Metal-free magnetism is of fundamental interest to physical sciences, unlocking unprecedented dimensions for strongly correlated materials and biocompatible magnets. Here, we present a strategy to achieve strong coupling between spin centers of planar radical monomers in π-conjugated two-dimensional (2D) polymers and rationally control the orderings. If the π-states in these triangulene-based 2D polymers are half-occupied, then we predict that they are antiferromagnetic Mott-Hubbard insulators. Incorporating a boron or nitrogen heteroatom per monomer results in Stoner ferromagnetism and half-metallicity, with the Fermi level located at spin-polarized Dirac points. An unprecedented antiferromagnetic half-semiconductor is observed in a binary boron-nitrogen-centered 2D polymer. Our findings pioneer Stoner and Mott-Hubbard magnetism emerging in the electronic π-system of crystalline-conjugated 2D polymers.

Electrical control of intrinsic nonlinear Hall effect in antiferromagnetic topological insulator sandwiches

Electrical control of intrinsic nonlinear Hall effect in antiferromagnetic topological insulator sandwiches

One-dimensional magnetic excitonic insulators

Abstract Dimensionality significantly affects exciton production and condensation. Despite the report of excitonic instability in one-dimensional materials, it remains unclear whether these spontaneously produced excitons can form Bose–Einstein condensates. In this work, we first prove statistically that one-dimensional condensation exists when the spontaneously generated excitons are thought of as an ideal neutral Bose gas, which is quite different from the inability of free bosons to condense. We then derive a general expression for the critical temperature in different dimensions and find that the critical temperature increases with decreasing dimension. We finally predict by first-principles GW-Bethe–Salpeter equation calculations that experimentally accessible single-chain staircase Scandocene and Chromocene wires are an antiferromagnetic spin-triplet excitonic insulator and a ferromagnetic half-excitonic insulator, respectively.

Quantum Effects at a Spin-Flop Transition in the Antiferromagnetic Topological Insulator MnBi2Te4

It is shown that the experimentally detected features in the low-temperature behavior of the magnetization in an external magnetic field perpendicular to the layers of manganese ions of the topological antiferromagnet MnBi2Te4 are due to quantum effects induced by the off-diagonal nature of the trigonal component of the crystal field. In this case, the anomalous increase in the magnetization of the material before the spin-flop transition, as well as after it in the phase of “collapsed” sublattices, is explained by the suppression of contributions from quantum effects. The comparison of the results of the theoretical analysis with experimental data has made it possible to refine the parameters of the effective spin model of MnBi2Te4 and to establish the important role of the noted trigonal component.

Pressure-induced magnetic and topological transitions in non-centrosymmetric MnIn2Te4

In recent years, the study of magnetic topological materials, with their variety of exotic physics, has significantly flourished. In this work, we predict the interplay of magnetism and topology in the non-centrosymmetric ternary manganese compound MnIn2Te4under external hydrostatic pressure, using first-principles calculations and symmetry analyses. At ambient pressure, the ground state of the system is an antiferromagnetic insulator. With the application of a small hydrostatic pressure (∼0.50 GPa), it undergoes a magnetic transition, and the ferromagnetic state becomes energetically favorable. At ∼2.92 GPa, the ferromagnetic system undergoes a transition into a Weyl semimetallic phase, which hosts multiple Weyl points in the bulk. The presence of non-trivial Weyl points have been verified by Wilson bands computations and the presence of characteristic surface Fermi arcs. Remarkably, we discover that the number of Weyl points in this system can be controlled by pressure and that these manifest in an anomalous Hall conductivity (AHC). In addition to proposing a new candidate magnetic topological material, our work demonstrates that pressure can be an effective way to induce and control topological phases, as well as AHC, in magnetic materials. These properties may allow our proposed material to be used as a novel pressure-controlled Hall switch.

Ferrimagnetic second-order topological insulator with valley polarization in two-dimensional magnet

Two-dimensional (2D) ferromagnetic and antiferromagnetic second-order topological insulators (SOTIs) coexisting with valley polarization have received increasing attention recently, while 2D valley-polarized ferrimagnetic (ferri-valley) SOTI has not been reported yet. In this work, we propose an effective six-band tight-binding model based on structural symmetry to confirm the possibility of coexistence of ferrimagnetism, second-order topological corner states, and valley polarization in 2D systems, and predict Mo2CSCl monolayer as the robust 2D ferri-valley SOTI with good structural stability, considerable Curie temperature estimated to be 100 K, and distinct valley polarization up to 109 meV under out-of-plane exchange field based on our model and first-principles calculations. Also, we find that the spin polarization direction of corner states combined with valley polarization can be controlled by switching the direction of the magnetization direction using an external magnetic field. These findings of the combination of intrinsic ferrimagnetism, second-order topological properties, and valley polarization in single 2D materials provide an ideal platform for practical applications in multifield-control spintronic devices.

Quantum geometry quadrupole-induced third-order nonlinear transport in antiferromagnetic topological insulator MnBi2Te4

The study of quantum geometry effects in materials has been one of the most important research directions in recent decades. The quantum geometry of a material is characterized by the quantum geometric tensor of the Bloch states. The imaginary part of the quantum geometry tensor gives rise to the Berry curvature while the real part gives rise to the quantum metric. While Berry curvature has been well studied in the past decades, the experimental investigation on the quantum metric effects is only at its infancy stage. In this work, we measure the nonlinear transport of bulk MnBi2Te4, which is a topological anti-ferromagnet. We found that the second order nonlinear responses are negligible as required by inversion symmetry, the third-order nonlinear responses are finite. The measured third-harmonic longitudinal (Vxx3ω\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$${V}_{{xx}}^{3\\omega }$$\\end{document}) and transverse (Vxy3ω\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$${V}_{{xy}}^{3\\omega }$$\\end{document}) voltages with frequency 3ω\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$\\omega$$\\end{document}, driven by an a.c. current with frequency ω\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$\\omega$$\\end{document}, show an intimate connection with magnetic transitions of MnBi2Te4 flakes. Their magnitudes change abruptly as MnBi2Te4 flakes go through magnetic transitions from an antiferromagnetic state to a canted antiferromagnetic state and to a ferromagnetic state. In addition, the measured Vxx3ω\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$${V}_{{xx}}^{3\\omega }$$\\end{document} is an even function of the applied magnetic field B while Vxy3ω\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$${V}_{{xy}}^{3\\omega }$$\\end{document} is odd in B. Amazingly, the field dependence of the third-order responses as a function of the magnetic field suggests that Vxx3ω\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$${V}_{{xx}}^{3\\omega }$$\\end{document} is induced by the quantum metric quadrupole and Vxy3ω\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$${V}_{{xy}}^{3\\omega }$$\\end{document} is induced by the Berry curvature quadrupole. Therefore, the quadrupoles of both the real and the imaginary part of the quantum geometry tensor of bulk MnBi2Te4 are revealed through the third order nonlinear transport measurements. This work greatly advanced our understanding on the connections between the higher order moments of quantum geometry and nonlinear transport.

High temperature ferrimagnetic semiconductors by spin-dependent doping in high temperature antiferromagnets

To realize room temperature ferromagnetic (FM) semiconductors is still a challenge in spintronics. Many antiferromagnetic (AFM) insulators and semiconductors with high Neel temperature TN are obtained in experiments, such as LaFeO3, BiFeO3, etc. High concentrations of magnetic impurities can be doped into these AFM materials, but AFM state with very tiny net magnetic moments was obtained in experiments because the magnetic impurities were equally doped into the spin up and down sublattices of the AFM materials. Here, we propose that the effective magnetic field provided by a FM substrate could guarantee the spin-dependent doping in AFM materials, where the doped magnetic impurities prefer one sublattice of spins, and the ferrimagnetic (FIM) materials are obtained. To demonstrate this proposal, we study the Mn-doped AFM insulator LaFeO3 with FM substrate of Fe metal by the density functional theory (DFT) calculations. It is shown that the doped magnetic Mn impurities prefer to occupy one sublattice of the AFM insulator and introduce large magnetic moments in La(Fe, Mn)O3. For the AFM insulator LaFeO3 with high TN = 740 K, several FIM semiconductors with high Curie temperature TC > 300 K and the band gap less than 2 eV are obtained by DFT calculations when 1/8 or 1/4 Fe atoms in LaFeO3 are replaced by the other 3d, 4d transition metal elements. The large magneto-optical Kerr effect (MOKE) is obtained in these LaFeO3-based FIM semiconductors. In addition, the FIM semiconductors with high TC are also obtained by spin-dependent doping in some other AFM materials with high TN, including BiFeO3, SrTcO3, CaTcO3, etc. Our theoretical results propose a way to obtain high TC FIM semiconductors by spin-dependent doping in high TN AFM insulators and semiconductors.

Layer-polarized anomalous Hall effect in the MnBi[formula omitted]Te[formula omitted]/In[formula omitted]Se[formula omitted] (In[formula omitted]Te[formula omitted]) heterostructures

The layer-polarized anomalous Hall effect has emerged as a novel phenomenon in the field of condensed matter physics, holding significant promise for future applications in designing low-dissipation devices. Currently, the layer-polarized anomalous Hall effect has been theoretically predicted or experimentally demonstrated through the application of external electric fields or the utilization of sliding ferroelectricity in diverse systems. Here, through first-principles calculations, we propose a pathway to realize the layer-polarized anomalous Hall effect by constructing A-type antiferromagnetic topological insulator MnBi2Te4 based heterostructures with ferroelectric materials In2Se3/In2Te3. Our results firstly show that the sizeable band splitting (larger than 20 meV) appears in the antiferromagnetic 4 septuple layers MnBi2Te4/In2Se3 system due to broken inversion symmetry. Further calculations approve that the layer-polarized anomalous Hall conductivity with reversal signs can be observed in the antiferromagnetic 4 septuple layers MnBi2Te4/In2Se3 (In2Te3) systems by shifting the Fermi energy level. Additionally, it is also found that ferrimagnetic 4 septuple layers MnBi2Te4/In2Se3 (In2Te3) can be realized by controlling the direction of ferroelectric polarization of ferroelectric materials. Thus, the resulting layer-polarized anomalous Hall effect may be switchable in our suggested systems. This work provides feasible systems for the further experimental realization of the layer-polarized anomalous Hall effect.

Electrically tunable high-Chern-number quasiflat bands in twisted antiferromagnetic topological insulators

Electrically tunable high-Chern-number quasiflat bands in twisted antiferromagnetic topological insulators

Bridging the small and large in twisted transition metal dichalcogenide homobilayers: A tight binding model capturing orbital interference and topology across a wide range of twist angles

Many of the important phases observed in twisted transition metal dichalcogenide homobilayers are driven by short-range interactions, which should be captured by a local tight binding description since no Wannier obstruction exists for these systems. Yet, published theoretical descriptions have been mutually inconsistent, with honeycomb lattice tight binding models adopted for some twist angles, triangular lattice models adopted for others, and with tight binding models forsaken in favor of band projected continuum models in many numerical simulations. Here, we derive and study a minimal model containing both honeycomb orbitals and a triangular site that represents the band physics across a wide range of twist angles. The model provides a natural basis to study the interplay of interaction and topology in these heterostructures. It elucidates from generic features of the bilayer the sequence of Chern numbers occurring as twist angle is varied, and the microscopic origin of the magic angle at which flat-band physics occurs. At integer filling, the model successfully captures the Chern ferromagnetic and van Hove-driven antiferromagnetic insulators experimentally observed for small and large angles, respectively, and allows a straightforward calculation of the magnetoelectric properties of the system. Published by the American Physical Society 2024

Antiferromagnetic Chern insulator with large charge gap in heavy transition-metal compounds

Despite the discovery of multiple intrinsic magnetic topological insulators in recent years the observation of Chern insulators is still restricted to very low temperatures due to the negligible charge gaps. Here, we uncover the potential of heavy transition-metal compounds for realizing a collinear antiferromagnetic Chern insulator (AFCI) with a charge gap as large as 300 meV. Our analysis relies on the Kane-Mele-Kondo model with a ferromagnetic Hund coupling JH\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$J_{{\ extrm{H}}}$$\\end{document} between the spins of itinerant electrons and the localized spins of size S. We show that a spin-orbit coupling λSO≳0.03t\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$\\lambda _{{\ extrm{SO}}} \\gtrsim 0.03t$$\\end{document}, where t is the nearest-neighbor hopping element, is already large enough to stabilize an AFCI provided the alternating sublattice potential δ\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$\\delta$$\\end{document} is in the range δ≈SJH\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$\\delta \\approx SJ_{{\ extrm{H}}}$$\\end{document}. We establish a remarkable increase in the charge gap upon increasing λSO\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$\\lambda _{{\ extrm{SO}}}$$\\end{document} in the AFCI phase. Using our results we explain the collinear AFCI recently found in monolayers of CrO and MoO with charge gaps of 1 and 50meV\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$50\\,\\hbox {meV}$$\\end{document}, respectively. In addition, we propose bilayers of heavy transition-metal oxides of perovskite structure as candidates to realize a room-temperature AFCI if grown along the [111] direction and subjected to a perpendicular electric field.

Symmetry-driven anisotropic coupling effect in antiferromagnetic topological insulator: Mechanism for a quantum anomalous Hall state with a high Chern number

Symmetry-driven anisotropic coupling effect in antiferromagnetic topological insulator: Mechanism for a quantum anomalous Hall state with a high Chern number

Exchange bias in heterostructures combining magnetic topological insulator MnBi2Te4 and metallic ferromagnet Fe3GeTe2

Introducing magnetism into topological insulators enables exotic phenomena such as quantum anomalous Hall effect. By fabricating van der Waals (vdW) heterostructures using layered magnetic materials, we can not only induce a gap in the non-magnetic topological surface states through magnetic proximity but also further manipulate the magnetic properties of magnetic topological insulators. However, the scarcity of 2D ferromagnetic insulator materials limits the fabrication of such heterostructures. Here, we demonstrate the vdW heterostructure devices comprising metal ferromagnetic Fe3GeTe2 nanoflakes and few-layer antiferromagnetic topological insulator MnBi2Te4 separated by an insulating hexagonal-boron nitride spacer. These devices exhibit significant exchange bias with the exchange bias field of over 100 mT under certain conditions. Our results prove that besides magnetic insulators, metallic magnets can also effectively adjust the magnetic properties of topological insulators, thereby inspiring diverse configurations of the heterostructures between topological insulators and magnetic materials.