Antiferroelectric Order Research Articles

A Frustrated Antipolar Phase Analogous to Classical Spin Liquids.

The study of magnetic frustration in classical spin systems is motivated by the prediction and discovery of classical spin liquid states. These uncommon magnetic phases are characterized by a massive degeneracy of their ground state implying a finite magnetic entropy at zero temperature. While the classical spin liquid state is originally predicted in the Ising triangular lattice antiferromagnet in 1950, this state has never been experimentally observed in any triangular magnets. The discovery of an electric analogue of classical spin liquids on a triangular lattice of uniaxial electric dipoles in EuAl12O19 is reported here. This new type of frustrated antipolar phase is characterized by a highly-degenerate state at low temperature implying an absence of long-range antiferroelectric order, despite short-range antipolar correlations. Its dynamics are governed by a thermally activated process, slowing down upon cooling toward a complete freezing at zerotemperature.

Revealing the role of B-site cations in the antiferroelectricity of NaNbO3-based perovskites

The promising prospects of antiferroelectric perovskite oxides in the realm of energy storage applications hinge on the unique field-induced phase transitions. Once the transition is triggered by the application of an electric field, characteristic double polarization loops appear. However, NaNbO3-based materials that exhibit a reversible phase transition are still rare, which hinders the practical applications of lead-free antiferroelectrics. Here, the impact of materials chemistry on the competition between antiferroelectric and ferroelectric states is demonstrated in a series of NaNbO3-based solid solutions with varying perovskite B-site cations, while the A-site is fixed as strontium. The crystal structure is analyzed on the basis of Rietveld refinement of high-energy X-ray diffraction data. The phase transition behavior as well as the antiferroelectric and ferroelectric properties are probed by a series of electrical measurements. The antiferroelectric phase is universally observed for all investigated materials in the virgin state. The SrTiO3-substituted system shows an irreversible phase transition similar to that of pure NaNbO3. In contrast, double polarization hysteresis loops are observed in the SrHfO3-, SrZrO3-, and SrSnO3-substituted systems. It is confirmed that compounds that can reduce the tolerance factor of the system contribute to the stabilization of the antiferroelectric order, while those that can reduce the electronegativity difference lead to more pronounced double loops. The competition between antiferroelectricity and ferroelectricity is linked to the competition between covalent and ionic bonding in perovskites.

Ultrahigh electromechanical response from competing ferroic orders

Materials with electromechanical coupling are essential for transducers and acoustic devices as reversible converters between mechanical and electrical energy1–6. High electromechanical responses are typically found in materials with strong structural instabilities, conventionally achieved by two strategies—morphotropic phase boundaries7 and nanoscale structural heterogeneity8. Here we demonstrate a different strategy to accomplish ultrahigh electromechanical response by inducing extreme structural instability from competing antiferroelectric and ferroelectric orders. Guided by the phase diagram and theoretical calculations, we designed the coexistence of antiferroelectric orthorhombic and ferroelectric rhombohedral phases in sodium niobate thin films. These films show effective piezoelectric coefficients above 5,000 pm V−1 because of electric-field-induced antiferroelectric–ferroelectric phase transitions. Our results provide a general approach to design and exploit antiferroelectric materials for electromechanical devices.

In situ X-ray diffraction evidence of field-induced transitions in a PbHfO3 single crystal

Antiferroelectric (AFE) materials are interesting due to recent discoveries of new prospective applications, although the mechanisms of the phase transitions that are at the heart of these applications remain incompletely understood. This work is devoted to the study of a single crystal of a model AFE, lead hafnate, by X-ray diffraction with in situ application of an electric field to trigger the transition to a polar phase. Two consecutive experiments were carried out on a 35 µm thick plate with [110] surface normal orientation over a field range from 0 to 330 kV cm−1 and back. A sharp drop in the intensity of R- and Σ-type reflections around 225 kV cm−1 was registered, with almost complete disappearance after 250 kV cm−1. This is compatible with a field-induced phase transition from the AFE to the R3m polar phase, which was suggested earlier on the basis of non-diffraction characterizations. X-ray diffraction reveals that the AFE domains with displacements parallel to the field direction react much more smoothly to the field, gradually reducing the AFE order at very small fields instead of holding it almost constant up to the critical field value, which is naturally expected. This expectation is fulfilled for domains with other orientations, but only for the first switching cycle; in the second switching cycle the AFE order already shows a notable decrease at subcritical fields. It is suggested that these observations could be linked with the antiphase domain wall population being affected by the field, which is consistent with the observation of diffuse rods between the Γ and Σ points. Another remarkable observation is the much smoother recovery of the AFE phase compared with its sharp disappearance at the critical field.

Heterogeneous Antiferroelectric Ordering in NaNbO3–SrSnO3 Ceramics Revealed by Direct Superstructure Imaging

Heterogeneous Antiferroelectric Ordering in NaNbO₃–SrSnO₃ Ceramics Revealed by Direct Superstructure Imaging

Emergent Antiferroelectric Ordering and the Coupling of Liquid Crystalline and Polar Order

Polar liquid crystals possess 3D orientational order coupled with unidirectional electric polarity, yielding fluid ferroelectrics. Such polar phases are generated by rod‐like molecules with large electric dipole moments. 2,5‐Disubstituted 1,3‐dioxane is commonly employed as a polar motif in said systems, and herein it is shown to suffer from thermal instability as a consequence of equatorial‐trans to axial‐trans isomerism at elevated temperatures. Isosteric building blocks are utilized as potential replacements for the 1,3‐dioxane unit, and in doing so new examples of fluid ferroelectric systems are obtained. For binary mixtures of certain composition, the emergence of a new fluid antiferroelectric phase, a finding not observed for either of the parent molecules, is observed. This study also reveals a critical tipping point for the emergence of polar order in otherwise apolar systems. These results hint at the possibility for uncovering new highly ordered polar liquid‐crystalline phases and delineate distinct transition mechanisms in orientational and polar ordering.

Similarities and differences in the ordering at short and long ranges in a NaNbO3 based Pb-free smart system: a key to functional properties

In this study, we have investigated the crystal structure of the solid solution of antiferroelectric NaNbO3(NN) with ferroelectric Ba0.9Ca0.1TiO3(BCT), i.e. (1−x)NN- xBCT for 0⩽x⩽1.0 using High-resolution powder x-ray diffraction (HR-XRD) data, dielectric measurements in conjunction with Raman spectroscopic studies. The investigation of long-range structural phase transitions as a function of composition(x) using x-ray diffraction is complemented by short-range structural insights from Raman spectroscopy. The incorporation of BCT disrupts the delicate antiferroelectric ordering of NN and stabilizes various ferroelectric phases with increasing BCT content(x). At x = 0.10, the simultaneous presence of two ferroelectric phases viz., Pmc21 and Amm2, results in a threefold rise in remanent polarization compared to off-boundary compositions. The composition with higher BCT content (i.e. x⩾0.50 ) has shown the anomalous existence of two long-range cubic structures, both of which are characterized by Pm 3¯ m space group. In spite of having a two-phase long-range centrosymmetric structure, we have observed a slim Polarization vs. Electric field(P-E) hysteresis loop for 0.50⩽x⩽0.80 . This contrapositive behavior (i.e. hysteresis loop in a centrosymmetric structure) has been attributed to the correlations among local static polar distortions of rhombohedral type ascertained using Raman spectroscopy. The coexistence of two ferroelectric phases at room temperature(for x = 0.10) and a slim hysteresis loop (for 0.50⩽x⩽0.80 ) make these compositions potential ingredients for applications in ferroelectric memory and energy storage devices.

Unconventional Polarization Response in Titanite-Type Oxides due to Hashed Antiferroelectric Domains.

Domains in a crystal, which have crystallographic uniformity and are geometrically segmented, typically arise from various phase transitions. The physical properties within individual domains are inherently the same as those in the homogeneous bulk. As a result, sufficiently large domains have little influence on the bulk properties. However, as the domains decrease in size to the nanoscale, for instance, due to multiple phase instabilities or spatial inhomogeneities, then the materials often acquire exceptional functionalities that are unattainable without these domains. This effect is exemplified by the ultrahigh dielectric and piezoelectric responses observed in ferroelectric oxides with nanoscale polar domains as well as in ferroelectric relaxors with polar nanoclusters. Here, we demonstrate that hashed nanoscale domains in an antiferroelectric material are also capable of boosting dielectric permittivity in an unconventional way. This discovery has been made in an antiferroelectric titanite-type oxide, CaTi(Si1-xGex)O5, in which the permittivity significantly increases when the antiferroelectric order becomes short-range. Our transmission electron microscopy observations have clarified that polar regions simultaneously appear around antiphase boundaries in the antiferroelectric phase of CaTi(Si1-xGex)O5. As the concentration of the antiphase boundary increases, the polar regions become denser and play a crucial role in boosting the permittivity. At the composition of x = 0.5, the value of the permittivity finally reaches double that in the bulk and shows excellent linearity, at least until an electric field of 500 kV/cm is applied. The present findings highlight the promise of domain engineering for boosting the permittivity in antiferroelectrics as a way to develop materials with excellent dielectric properties.

Ultrahigh energy storage performance in AN-based superparaelectric ceramics

Ceramics capacitors, especially featuring antiferroelectric (AFE) structure, are widely used in pulsed power electronic systems due to distinctive high-power density and external field stability. Lead-free AFE material AgNbO3 has seized substantial research attention owing to its unique temperature driven multi-level phase transitions, and many works have greatly improved the energy storage properties by engineering these temperature-dependent phase boundaries. In this work, an ever-unadopted strategy was proposed to modulate the relaxor structure in AgNbO3 by designing room-temperature (RT) superparaelectric phase via Bi incorporation into AN lattice matrix. Structural analysis shows M phase (space group Pbcm) evolves into O phase (space group Cmcm) with 12 mol.% Bi-substitution, breaking the long-range AFE order into polar nanoregions. Hence, an ultra-high recoverable energy density (7.6 J/cm3) and a high efficiency (79 %) are simultaneously achieved in the Ag0.64Bi0.12NbO3 ceramics under 52.2 kV/mm. Moreover, the excellent energy storage properties are accompanied with good temperature and frequency stability, with the variation of Wrec less than ± 15% (over 25–120 °C) and ± 10% (over 1–200 Hz) under 25 kV/mm, respectively. The novel approach reported herein provides a new guidance for designing AgNbO3-based and other AFE materials for high-performance energy storage applications.

Phase transition characteristics, electrical and optical properties of AgNbO<sub>3 </sub>crystals grown by flux method

<sec>AgNbO<sub>3</sub>, with the antiferroelectric ordering and huge polarization (>50 μC/cm<sup>2</sup>), has potential applications in smart electronic devices, such as energy storage dielectrics, large displacement actuators, and electrocaloric cooling device. Large electro-strain and excellent energy storage properties have been reported in AgNbO<sub>3</sub>-based ceramics. Nevertheless, the lack of systematic research on the AbNbO<sub>3</sub> single crystals increases the difficulty in further understanding their structure-property relationship.</sec><sec>In this work, <inline-formula><tex-math id="M3">\begin{document}${\left\langle {001} \right\rangle _c}$\end{document}</tex-math><alternatives><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="3-20230984_M3.jpg"/><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="3-20230984_M3.png"/></alternatives></inline-formula> oriented AgNbO<sub>3</sub> single crystals with a large size (maximum size 5 mm×4 mm×4 mm) and high quality are successfully grown by the flux method. The phase transition characteristics are studied by the X-ray diffraction, temperature dependence of dielectric data and AC impedance, polarized light microscope photos, and differential scanning calorimetry curves. The electrical and optical properties are studied by the ferroelectric response and electro-strain response, optical absorbance spectrum and photo-dielectric effect.</sec><sec>The AgNbO<sub>3</sub> single crystals with the <i>M</i> phase exhibit the same domain structure. When the structure changes from <i>M</i><sub>2</sub> to <i>M</i><sub>3</sub>, the contrast of the PLM image is darkened. Correspondingly, the conductivity and dielectric loss significantly increase, which relates to the dynamic behaviors of the carriers. Interestingly, neither exothermic peak nor endothermic peak relating to the <i>M</i><sub>2</sub>-<i>M</i><sub>3</sub> transition is observed. The active energy for the <i>M</i><sub>3</sub> phase AgNbO<sub>3</sub> single crystal is ~1.24 eV. When the structure changes from orthogonal <i>M</i><sub>3</sub> to paraelectric orthogonal <i>O</i>, the domain structure disappears and the contrast becomes darker. The finding indicates that the anisotropy of the crystals disappears. At the same time, an obvious thermal hysteresis observed in the DSC curve reveals that the <i>M</i><sub>3</sub>-<i>O</i> transition is first-order. At room temperature, the direct band gap of AgNbO<sub>3</sub> single crystal is ~2.73 eV, which is slightly narrower than that of AgNbO<sub>3</sub> ceramic. Below the critical electric field, AgNbO<sub>3</sub> single crystal shows an electro-strain of 0.076% under <i>E</i><sub>m</sub> = 130 kV/cm. The obtained electro-strain value is much higher than that of AgNbO<sub>3</sub> ceramic under the same electric field. The relative permittivity increases from 70 to 73 under the green laser irradiation, showing an apparent photo-dielectric effect. We believe that our study can assist in the further understanding of the phase transition characteristics and physical properties in AgNbO<sub>3</sub> single crystals.</sec>

In-Plane Ferrielectric Order in van der Waals β'-In2Se3.

van der Waals ferroic materials exhibit rich potential for implementing future generation functional devices. Among these, layered β'-In2Se3 has fascinated researchers with its complex superlattice and domain structures. As opposed to ferroelectric α-In2Se3, the understanding of β'-In2Se3 ferroic properties remains unclear because ferroelectric, antiferroelectric, and ferroelastic characteristics have been separately reported in this material. To develop useful applications, it is necessary to understand the microscopic structural properties and their correlation with macroscopic device characteristics. Herein, using scanning transmission electron microscopy (STEM), we observed that the arrangement of dipoles deviates from the ideal double antiparallel antiferroelectric character due to competition between antiferroelectric and ferroelectric structural ordering. By virtue of second-harmonic generation, four-dimensional STEM, and in-plane piezoresponse force microscopy, the long-range inversion-breaking symmetry, uncompensated local polarization, and net polarization domains are unambiguously verified, revealing β'-In2Se3 as an in-plane ferrielectric layered material. Additionally, our device study reveals analogous resistive switching behaviors of different types owing to polarization switching, defect migration, and defect-induced charge trapping/detrapping processes.

Direct observation of intrinsic room-temperature ferroelectricity in 2D layered CuCrP2S6

Multiferroic materials have ignited enormous interest owing to their co-existence of ferroelectricity and ferromagnetism, which hold substantial promise for advanced device applications. However, the size effect, dangling bonds, and interface effect in traditional multiferroics severely hinder their potential in nanoscale device applications. Recent theoretical and experimental studies have evidenced the possibility of realizing two-dimensional (2D) multiferroicity in van der Waals (vdW) layered CuCrP2S6. However, the incorporation of magnetic Cr ions in the ferroelectric framework leads to antiferroelectric and antiferromagnetic orderings, while macroscopic spontaneous polarization is always absent. Herein, we report the direct observation of robust out-of-plane ferroelectricity in 2D vdW CuCrP2S6 at room temperature with a comprehensive investigation. Modification of the ferroelectric polarization states in 2D CuCrP2S6 nanoflakes is experimentally demonstrated. Moreover, external electric field-induced polarization switching and hysteresis loops are obtained in CuCrP2S6 down to ~2.6 nm (4 layers). By using atomically resolved scanning transmission electron microscopy, we unveil the origin of the emerged room-temperature ferroelectricity in 2D CuCrP2S6. Our work can facilitate the development of multifunctional nanodevices and provide important insights into the nature of ferroelectric ordering of this 2D vdW material.

Intrinsic Atomic-Scale Antiferroelectric VOF3 Nanowire with Ultrahigh-Energy Storage Properties.

Antiferroelectrics with antiparallel dipoles are receiving tremendous attention for their technological importance and fundamental interest. However, intrinsic one-dimensional (1D) materials harboring antiferroelectric ordering have rarely been reported despite the promise of novel paradigms for miniaturized and high-density electronics. Herein, based on first- and second-principles calculations, we demonstrate the VOF3 atomic wire, exfoliated from an experimentally synthesized yet underexplored 1D van der Waals (vdW) bulk, as a new 1D antiferroelectric material. The energetic, thermal, and dynamic stabilities of the nanowire are confirmed theoretically. Moreover, the temperature-dependent phase transitions and double-hysteresis polarization-field loops are computed for the VOF3 nanowire by constructing the second-principles model. According to the hysteresis loops, high energy densities and efficiencies can be obtained simultaneously at room temperature in the VOF3 nanowire under moderate applied fields. Our identified 1D atomic wire not only expands the family of antiferroelectricity but also holds potential for novel high-power energy storage nanodevices.

Dielectric and antiferroelectric properties of Mn-doped CaZrO3-NaNbO3 ceramics

Mn doped CaZrO3-NaNbO3 solid solutions were prepared by a conventional solid reaction method. Mn doping can reduce leakage current significantly and the optimized content is 3% (mole). For Mn doped CaZrO3-NaNbO3 solid solutions, the antiferroelectricity is stabilized when the content of CaZrO3 is less than 6% (mole) When the content of CaZrO3 is higher than 6% (mole), the polarization decreases, the polarization-electric hysteresis loop becomes slim, and the antiferroelectric-antiferroelectric related dielectric peak disappears, indicating antiferroelectric ordering is destroyed.

Ferroelectric and negative piezoelectric properties in oxyhydroxide monolayers γ -XOOH (X = Al, Ga, and In)

Two-dimensional (2D) multiferroic materials with coexisting ferroelasticity (FA) and ferroelectricity (FE) have potential applications in high-density data storage and sonar detectors. Here, based on first-principles calculations, we predict a series of stable 2D FA-FE multiferroic structures, namely, γ-XOOH (X = Al, Ga, and In) monolayers. By analyzing the lattice symmetry and orientation distribution of hydroxyls, we find that XOOH monolayers possess both in-plane ferroelastic and ferroelectric polarization, as well as antiferroelectric ordering caused by the anti-parallel alignment of hydroxyls. Interestingly, the perpendicular reorientation of in-plane FE polarization accompanies 90° ferroelastic switching. Moreover, they show an unusual negative transverse piezoelectric effect originated from the clamped-ion term. The multiferroic properties of the XOOH monolayers provide an excellent platform to study electroelastic effects.

Polarization Switching and Correlated Phase Transitions in Fluorite-Structure ZrO2 Nanocrystals.

Unconventional ferroelectricity in fluorite-structure oxides enables tremendous opportunities in nanoelectronics owing to their superior scalability and silicon compatibility. However, their polarization order and switching process remain elusive due to the challenges of visualizing oxygen ions in nanocrystalline films. In this work, the oxygen shifting during polarization switching and correlated polar-nonpolar phase transitions are directly captured among multiple metastable phases in freestanding ZrO2 thin films by low-dose integrated differential phase-contrast scanning transmission electron microscopy (iDPC-STEM). Bidirectional transitions between antiferroelectric and ferroelectric orders and interfacial polarization relaxation are clarified at unit-cell scale. Meanwhile, polarization switching is strongly correlated with Zr-O displacement in reversible martensitic transformation between monoclinic and orthorhombic phases and two-step tetrahedral-to-orthorhombic phase transition. These findings provide atomic insights into the transition pathways between metastable polymorphs and unravel the evolution of polarization orders in (anti)ferroelectric fluorite oxides.

Highly mismatched antiferroelectric films: Transition order and mechanical state

Epitaxial ${\mathrm{PbZrO}}_{3}/{\mathrm{SrRuO}}_{3}/{\mathrm{SrTiO}}_{3}$ heterostructures are among the most widely studied thin-film antiferroelectrics. This paper explores their temperature-induced phase transitions and the characteristics of the domain structure by means of high-resolution synchrotron x-ray diffraction. The antiferroelectric transition order appears to change from the first to the second; peculiar in-plane $M$-point superstructures develop at high temperatures, manifesting a new phase; the $R$- and $\mathrm{\ensuremath{\Sigma}}$-point superstructure reflections demonstrate much reduced splitting as compared to the demands of the mechanical compatibility. We discuss the energetics of the reduced around-the-normal antiferroelectric domain tilts, its relation to the observed changes in phase transitions, and point to the possible contribution to the observed effect from an unusual diffraction mechanism related to the partial coherence between domains in a random nanodomain structure.

Giant Nonlinear Optical Response via Coherent Stacking ofIn-Plane Ferroelectric Layers.

Thin ferroelectric materials hold great promise for compact nonvolatile memory and nonlinear optical and optoelectronic devices. Herein, an ultrathin in-plane ferroelectric material that exhibits a giant nonlinear optical effect, group-IV monochalcogenide SnSe, is reported. Nanometer-scale ferroelectric domains with ≈90°/270° twin boundaries or ≈180° domain walls are revealed in physical-vapor-deposited SnSe by lateral piezoresponse force microscopy. Atomic structure characterization reveals both parallel and antiparallel stacking of neighboring van der Waals ferroelectric layers, leading to ferroelectric or antiferroelectric ordering. Ferroelectric domains exhibit giant nonlinear optical activity due to coherent enhancement of second-harmonic fields and the as-resulted second-harmonic generationwasobserved to be 100 times more intense than monolayer WS2 . This work demonstratesin-plane ferroelectric ordering and giant nonlinear optical activity in SnSe, which paves the way for applications in on-chip nonlinear optical components and nonvolatile memory devices.

Ferroelectric order in hybrid organic-inorganic perovskite NH4PbI3 with non-polar molecules and small tolerance factor

The appropriate theoretical picture of describing the ferroelectric order in hybrid organic-inorganic perovskite remains attractive and under intense debate. We rationalize the interaction between organic molecule sublattice and inorganic frame from first-principles. Through systematic investigations on the NH4PbI3, we show that the non-polar octahedral rotation dominates the process of stabilizing of the lattice with small value of tolerance factor. The direct coupling between molecules is negligible. With the help of hydrogen bonding to the inorganic cage, molecule sublattice will eventually build long-range ferroelectric or anti-ferroelectric order under the constrain of the inorganic cage and further polarize the inorganic frame as the feedback. These results also clarify that to build ferroelectricity the polar molecule is helpful but not crucial. As the general rule for hybrid organic-inorganic perovskite, we identified the fundamental mechanism that can be considered as a critical pre-step forward to further controlling the related physics in functional materials.

Crystal growth, exfoliation, and magnetic properties of quaternary quasi-two-dimensional CuCrP2S6

We report optimized crystal growth conditions for the quaternary compound ${\mathrm{CuCrP}}_{2}{\mathrm{S}}_{6}$ by chemical vapor transport. Compositional and structural characterization of the obtained crystals were carried out by means of energy-dispersive x-ray spectroscopy and powder x-ray diffraction. ${\mathrm{CuCrP}}_{2}{\mathrm{S}}_{6}$ is structurally closely related to the ${M}_{2}{\mathrm{P}}_{2}{\mathrm{S}}_{6}$ family ($M$: transition metal), which contains several compounds that are under investigation as 2D magnets. As-grown crystals exhibit a platelike, layered morphology as well as a hexagonal habitus. We present successful exfoliation of such as-grown crystals down to thicknesses of 2.6 nm corresponding to four layers. ${\mathrm{CuCrP}}_{2}{\mathrm{S}}_{6}$ crystallizes in the monoclinic space group $C2/c$. Magnetization measurements reveal an antiferromagnetic ground state with ${T}_{\text{N}}\ensuremath{\approx}30$ K and a positive Curie-Weiss temperature in agreement with dominant ferromagnetic intralayer coupling. Specific heat measurements confirm this magnetic phase transition and the magnetic order is suppressed in an external magnetic field of about 6 T (8 T) applied parallel (perpendicular) to the $ab$ plane. At higher temperatures between 140--200 K, additional broad anomalies associated with structural changes accompanying antiferroelectric ordering are detected in our specific heat studies.