Annealing Of Films Research Articles

Tensile strain-induced disorder and weak localization in SrRuO3 thin films on (100) KTaO3 substrates

Abstract SrRuO3 (SRO) thin (∼12 nm) films have been grown on KTaO3 (001) substrates by RF magnetron sputtering. The as-prepared films are under enormous in-plane tensile strain, which corresponds to the elastic energy of ∼1.5 MJ. Annealing in oxygen at 900 °C for 6 h relaxes strain, partially lowering the elastic energy. The surface topography shows a transition from granularity as the Ar+O2 pressure increases from 5 mTorr to 200 mTorr, with a simultaneous change in the average surface roughness from 4 nm to 0.8 nm. Annealing transforms the topography to island-type and enhances surface roughness. The films deposited at 5 mTorr are semiconducting, and annealing further enhances the resistivity. The ρ-T of films grown at 200 mTorr shows a metallic behavior with an inflection in the ρ-T at TC ∼ 150 K, FM transition. The low-temperature resistivity upturn shows the disordered nature of these films. The eq. ρ T = 1 σ 0 + a T 1 2 + a 1 T p 2 + b T α (p = 2 & α = 2) describes the transport behavior from 2 K to 300 K of 5 mTorr deposited films. In the 200 mTorr deposited film, the above eq. is valid at T < 95 K with p = 2 and α = 1.5. At TC < T ≤ 300 K, the ρ-T follows eq. ρ T = ρ 0 + ρ 1 T α with α = 1.3 and 1.5 for the as-grown and annealed films. The lower temperature ρ-T upturn appears to have contributions from the disorder-enhanced renormalized e-e interaction (REEI) and weak localization (WL) effects. The magnetoresistance behavior supports a substantial WL effect in the films grown at 200 mTorr. Our results establish a strong correlation between the nature of strain, surface topography, and carrier transport mechanisms.

Effect of thermal annealing on the luminescent and structural properties of the SiOxCy thin films by organic catalytic chemical vapor deposition

Photoluminescent silicon oxycarbide (SiOxCy) thin films were deposited on n-type (100) silicon substrates using the organic catalytic chemical vapor deposition (O-Cat-CVD) technique employing tetra-ethyl orthosilicate (TEOS) as an organic-based precursor. These films were annealed at a temperature of 500, 800 and 1000°C for 30 minutes in a nitrogen (N2) environment. The as-deposited and annealed SiOxCy films were analyzed using optical and structural characterizations, such as photoluminescence (PL), Fourier transform infrared (FTIR), X-ray photoelectron spectroscopy (XPS), Secondary ion mass spectrometry (SIMS) and scanning electron microscopy (SEM). The PL spectrum of the as-deposited film showed emission in the blue-green region, while the annealed SiOxCy films showed strong emission from blue to near-infrared. The PL in all the films was attributed to different structural defects related to oxygen and carbon that act as radiative centers in the SiOxCy network. The annealed films showed an increase in the emission intensity, where the annealed film at 800°C displayed the highest emission intensity. This is related to an increase in the amount of radiative defects in the films due to structural and compositional changes after the thermal annealing (TA). XPS and SIMS measurements showed an oxygen incorporation with the TA, increasing from 54.59 at. % to 63.5 at. % for the as-deposited and annealed at 1000°C films, respectively. FTIR spectra showed an increase in the Si-O-C and Si-O-Si bonds and the hydrogen and other radicals desorption. These results support the creation of radiative centers due to structural changes in the films after the thermal annealing.

Enhancing the emissive film quality: a new role of TADF materials for high-performance blue perovskite light-emitting diodes

Thermally activated delayed fluorescence (TADF) materials are widely used in the field of organic light-emitting diodes (OLEDs) because they can capture both singlet and triplet excitons for light emission. However, only scare attention has been paid to the application of TADF materials in perovskite LEDs (PeLEDs) and the understanding of effects of TADF materials in PeLEDs is limited. In this study, a new role of TADF materials for achieving high-quality perovskite films to enhance the performance of PeLEDs is emphasized. TADF materials are introduced into quasi-2D blue PeLEDs to assist in the crystallization of perovskites during film annealing and ensure the formation of high-quality films with reduced defects, enhancing device performance. Additionally, a step-like hole transport layer has been constructed to reduce the hole transport barrier, which can further enhance the performance of PeLEDs. The resultant blue PeLEDs exhibits an external quantum efficiency of 5.44%, which is 12.7-fold higher than that of the control device. Furthermore, a turn-on voltage of 2.6 V is achieved, which is the lowest for TADF-based blue PeLEDs. The findings may not only unlock a new role of TADF materials in blue PeLEDs, but also provide an alternative pathway to achieve high-performance PeLEDs.

On the structural and bandgap properties of mist-CVD-grown κ-Ga2O3 post continuous temperature annealing

We investigate the continuous annealing of orthorhombic κ-Ga2O3 films on AlN/c-plane sapphire templates grown by Mist Chemical Vapor Deposition (mist-CVD) using in situ high-temperature x-ray diffraction (HT-XRD). Increasing the annealing temperature from 400 to 1100 °C in both vacuum and ambient air reveals a phase transition onset at 825 °C. High-resolution transmission electron microscopy and XRD demonstrated that annealing within the stability window of 650 to 775 °C effectively improves the crystal quality of the κ-Ga2O3 thin film. Optical transmittance and low-loss electron energy loss spectroscopy (EELS) show the pristine film’s bandgaps to be 4.96 and 4.67 eV, respectively, with reduced bandgaps in annealed films due to increased defect density. EELS-derived optical joint density of states indicates that air-annealing fosters sub-bandgap radiative processes, while vacuum annealing suppresses them, qualitatively correlated with the observed photoluminescence intensity variations. The results of this comprehensive high-temperature annealing study offer crucial insight into the influence of annealing ambient conditions on the crystallographic properties of κ-Ga2O3 films and the associated evolution of extended sub-bandgap states.

Enhanced Impact Resistance, Oxygen Barrier, and Thermal Dimensional Stability of Biaxially Processed Miscible Poly(Lactic Acid)/Poly(Butylene Succinate) Thin Films.

This study investigates the crystallization, microstructure, and performance of poly(lactic acid)/poly(butylene succinate) (PLA/PBS) thin films processed through blown film extrusion and biaxial orientation (BO) at various blend ratios. Succinic anhydride (SA) was used to enhance interfacial adhesion in PLA-rich blends, while blends near 50/50 formed co-continuous phases without SA. Biaxial stretching and annealing, adjusted according to the crystallization behavior of PLA and PBS, significantly influenced crystallinity, crystallite size, and molecular orientation. Biaxial stretching induced crystallization and ordered chain alignment, particularly at the cold crystallization temperature (Tcc), leading to a 70-80-fold increase in impact resistance compared to blown films. Annealing further enhanced crystallinity, especially at the Tcc of PLA, resulting in larger crystallite sizes. BO films demonstrated reduced thermal shrinkage due to improved PLA crystalline structure, whereas PLA-rich blown films showed higher shrinkage due to PLA's lower thermal resistance. The SA-miscibilized phase reduced oxygen transmission in blown films, while BO films exhibited higher permeability due to anisotropic crystal orientation. However, the annealing of BO films, especially at high temperature (Tcc of PLA), further lowered oxygen permeability by promoting the crystallization of both PLA and PBS phases. Overall, the combination of SA compatibilization, biaxial stretching, and annealing resulted in substantial improvements in mechanical strength, dimensional stability, and oxygen barrier properties, highlighting the potential of these films for packaging applications.

Improving the photoswitching performance of a transistor with amorphous metal oxide semiconductor thin film by a gradient annealing approach

Metal oxides are attracting attention as electronic mate rials in research and industry. Thin films of amorphous indium gallium zinc oxide (a-IGZO) exhibit low absorbance in the visible spectrum, making them ideal components in transparent electronics. To widen the scope of use for thin film transistor (TFT) devices based on a-IGZO in on-chip sensing applications, photoresponsive behavior has been achieved by proper engineering of the active layers by either introducing a photosensitive top layer or using a method to generate localized states inside the band gap. In this paper, we propose a bilayer structured with the use of thermal annealing of a-IGZO film at different temperatures. Thermal annealing has been shown to improve the electrical performance of the TFT devices because of the improved film quality but negatively affects the photoresponsivity by removing tarp sites that play an important role in both charge generation and photomultiplication via the photogating effect. Therefore, here we propose an a-IGZO film with a high temperature-annealed bottom layer and pristine top layer. The bottom layer plays a vital role in the charge transport behavior, resulting in a low threshold voltage and subthreshold swing similar to the device with a fully annealed film, while the photoresponse of the device is driven by the higher density of gap states in the pristine top layer. This proposed method is advantageous to previously published procedures due to the simplicity of using no additional materials and complex steps to introduce trap sites into the photoactive layer, but only differential annealing temperature.

Exploring Platinum Thin Films as Electrodes for High‐Temperature and ‐Pressure Electrochemical Studies in Aqueous Systems

ABSTRACTThis work reports a methodology for the fabrication of Pt thin‐film electrodes for electrochemical studies in hydrothermal systems. The research process was meticulous, with particular attention paid to the multilayer Ti/Pt/Ti/Al2O3 film structure and annealing conditions that are expected to impact the morphology of the films, surface composition and electrochemical response. The findings of this study are significant, as they provide valuable insights into the behaviour of Pt thin‐film electrodes in various media and conditions. Two different approaches were adopted for the preparation of the electrodes: in one case, the Ti/Pt/Ti/Al2O3 films deposited on sapphire wafers were exposed to rapid thermal annealing at 900°C under argon for 5 min, followed by argon ion milling to etch the final electrode pattern (Pt‐RA(900)), while in the other case, uncapped Pt films were annealed, after etching, in a tubular oven under argon at specific temperatures between 200°C and 900°C (Pt‐TO). Rapid annealing at 900°C on capped films resulted in the formation of a Pt3Ti intermetallic alloy with remarkable mechanical and chemical stability even after 10 h of immersion in deionised water, acid (0.1 M H2SO4) and alkaline media (0.1 M KOH) conditions at temperatures up to 150°C, despite the dissolution of the Al2O3 top layer at 150°C and long immersion times (> 10 h). In the case of uncapped Pt films, diffusion and oxidation of Ti through the Pt film at high temperature resulted in the formation of TiO2 on the surface of Pt. The results were confirmed by using a comprehensive suite of ex‐situ characterisation techniques to follow changes in the Pt electrode surface morphology and composition before and after immersion in H2O, 0.1 M H2SO4 and 0.1 M KOH solutions under argon. Ex‐situ electrochemical characterisation studies were also conducted to correlate the changes in the electrode surface properties, including the electrochemical surface area, with different annealing conditions and after various hydrothermal treatments in neutral, alkaline and acidic media.

Preparation and Characterization of Nanostructured ITO Thin Films by Spray Pyrolysis Technique: Dependence on Annealing Temperature

Transparent conducting oxides (TCOs) like Indium tin oxide (ITO) have wide attention from all scientists which have low resistance and high visible light transmittance, used as transparent electrodes in many optoelectronic devices such as liquid crystal displays, touch screens, light emitting diodes, and solar cells. In this research, the relationship between the crystallization, optical transmittance, and surface roughness of nanostructured ITO thin films and the change in annealing temperature was investigated. To enhance the efficiency of this material in optoelectronic applications, both the optical transmittance in the visible region and the crystallite size must be increased. These results can be obtained by the heat treatment of the films. Nanostructured ITO thin layer films have been successfully prepared at a substrate temperature equal to (350)℃ by chemical spray pyrolysis (CSP) technique. The physical characterizations of nanostructured ITO thin layer films were investigated at different annealing temperatures (400,450 and 500)℃. The presence of diffraction peaks indicates that the as-deposited and post annealed films are polycrystalline cubic structure and the peak (400) is a preferred growth orientation. For all samples the value of intensity of diffraction peaks increases with increasing substrate temperature. The crystallite size of nanostructured ITO thin films is strongly related to the annealing temperature. The crystallite size estimated from XRD was found to rise with rising annealing temperature. The surface roughness of nanostructured ITO thin layer films increases with rising annealing temperature. High values of transmittance have been measured in the visible region 550 nm equal to (70, 82, 84 and 88)% corresponding to annealing temperature (350,400,450 and 500)℃ respectively.

Enhancement of carrier concentration in chemical bath deposited copper sulfide (CuxS) thin film by post-growth annealing treatment

Copper sulfide thin films (CuxS, 1 ≤ x ≤ 2), owing to their unique optical and electrical properties, have attracted enormous attention in recent research. As one of the chalcogenide semiconductors, CuxS is used in several applications such as chemical sensors, photo-absorbing layers, photovoltaics, and lithium-ion batteries. In this study, copper sulfide thin film (CuxS; where 1 ≤ x ≤ 2) has been deposited by the chemical bath deposition method (CBD) at 27 °C with the molar ratio for copper and sulfur as 1:5, respectively. The structural, compositional, morphological, optical, and electrical properties of as-deposited and annealed CuxS thin films are investigated. From XRD plots, the presence of a mixture of two co-existing polycrystalline phases is observed, i. e. covellite phase with CuS stoichiometry and digenite phase with Cu1.8S stoichiometry up to an annealing temperature of 200 °C. At higher annealing temperatures, i.e. at 300 °C and 400 °C, the phase of CuxS thin film gets completely converted to digenite phase with Cu1.8S stoichiometry and chalcocite phase with Cu2S stoichiometry respectively. There is an enhancement in the crystallinity of CuxS thin film with an increase in annealing temperature as confirmed by XRD and Raman results. The optical bandgap of CuxS thin film is found to be decreased from 2.81 eV to 1.66 eV with an increase in the annealing temperature. The CuxS thin films are found to be p-type in nature, and the film annealed at 400 °C possesses the highest carrier concentration as revealed from the Hall effect measurement. This study aims to investigate the improvement of electrical properties of CuxS thin film with the variation in annealing temperature for optoelectronic applications such as photodetector.

Formation of n-type polycrystalline silicon with controlled doping concentration by flash lamp annealing of catalytic CVD amorphous silicon films

We investigated the properties of polycrystalline silicon (poly-Si) films formed by the flash lamp annealing (FLA) of hydrogenated amorphous Si (a-Si:H) films. Phosphorus- (P-) doped a-Si:H films with a thickness of several micrometers deposited by catalytic chemical vapor deposition (Cat-CVD) on a silicon nitride- (SiN x -) coated textured glass substrate are crystallized by FLA. P doping was achieved by flowing phosphine (PH3) during Cat-CVD, and the P concentration was controlled within a range of 1016–1021 cm−3, which was measured by secondary ion mass spectrometry. We also fabricated simple back-contact Si heterojunction solar cells to estimate a potential of flash-lamp-crystallized poly-Si as an absorption layer. The current-density–voltage (J–V) characteristics of the cells measured under 1 Sun light irradiation show an open-circuit voltage (V OC) of >0.4 V.

Characterization and linear / nonlinear optical aspects of polyaniline (PANI) films incorporated with Ethylenediamine for low-cost limiting optical technologies

Polymer composite combined film with Polyaniline (PANI) and Ethylenediamine (EDA) were successfully synthesized via the spin coating technique on a glass substrate followed by different thermal annealing degrees and times. Successful incorporation of EDA into the PANI polymer matrix and the effect of the annealing temperature have been demonstrated by XRD, FTIR, FESEM and TEM. Using UV–Vis optical spectroscopy, we determine the absorption coefficient, band edge, and Urbach energy. The effects of different annealing temperatures and times on linear/nonlinear optical characteristics were investigated. The band gap of EDA-doped PANI films is reduced with the different thermal annealing from 3.43 eV to 3.19 eV, while the Urbach tail of the 100 °C/4h film which is 0.492 eV was decreased to 0.469 eV for 150 °C/1h sample. However, the absorbance and optical conductivity were both increased. Besides, the optical limiting effect assesses their potential to mitigate intense light. It was found from the study that for green wavelength 100 °C/4h film decreases the input power by 16.5 % whereas the 150 °C/1h sample shows superior limiting behavior of 99.96 %. It has been found that thermal annealing of the EDA-doped PANI films enhances the synthetic composite's optical characteristics, making the 150 °C/1h sample of EDA-doped PANI films appropriate for utilization in both energy applications and optoelectronics.

Third-order non-linear optical switching and threshold limiting of NiO thin films

This study discusses the nonlinear optical properties of as-grown and annealed NiO thin films using the Z-scan technique utilizing the femtosecond laser pulses at a repetition rate of 100 kHz of wavelength 1030 nm with a pulse duration of 370 fs. In open aperture measurements, pristine reveal saturable absorption (SA) with a negative sign of nonlinearity, while annealed samples exhibit reverse saturable absorption (RSA) with a positive sign of nonlinearity. In closed aperture conditions, all samples show prefocal minima and postfocal maxima, indicating self-focusing behavior. The observed RSA phenomena are attributed to the indirect two-photon absorption (TPA) process. The influence of surface plasmon resonance on nonlinear absorption is successfully ruled out due to insufficient excitation energy (1.20 eV) to induce resonance in the samples. The increase in bandgap with annealing temperature, associated with indirect TPA, is elucidated with the shifting of Ni-dx2-y2\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$d_{x^2-y^2}$$\\end{document} and Ni-dz2\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$d_{z^2}$$\\end{document} orbitals in the conduction band, under the framework of Density Functional Theory (DFT). The DFT results are correlated with the observed nonlinear SA and RSA processes. The Ni d-d and Ni-d to O-p transitions contribute to the modulation of nonlinearity in the indirect TPA process. The study suggests that the sample annealed at 400 °C exhibits superior optical limiting properties with the highest nonlinear absorption coefficients compared to the other annealed sample, while the as-grown sample is suitable for passive Q-switching applications.

Comprehensive analysis of chemical composition, electronic, luminescent, and electrical properties of amorphous graphite-silicon carbide thin films: A comparative study of as-deposited and post-annealed states

Graphite/SiC (GSC) thin films were synthesized on silicon substrates via a spray method, depositing a Si-graphite solution on preheated silicon samples at 350 °C, followed by annealing at 800 °C for 4 h. A systematic approach was employed to ensure the effective incorporation of graphite into the SiC material during solution preparation. Various analytical techniques, including XPS, UPS, Reflection Energy Electron Loss Spectroscopy (REELS), PL, AFM, and Hall effect measurements, were employed for comparative analysis of the chemical composition, morphological, electrical, and optoelectronic properties of as-deposited and annealed GSC films. XPS analysis revealed the presence of Si—C and graphitic bonds in the as-deposited GSC, with a significant compositional shift to oxygen-rich graphite oxide/oxycarbides after annealing. REELS demonstrated increased bandgap and bulk plasmon energy due to surface oxidation, while UPS highlighted a high electronic density in the as-deposited film, diminishing after annealing. AFM revealed a tendency of as-deposited GSC grains to form smaller, sharper structures after annealing, resulting in smoother and more homogeneous surface morphology. Phase AFM confirmed graphite incorporation at grain boundaries and within the bulk, forming a composite structure. PL spectra of the as-deposited film exhibited a broad visible emission with distinct sub-peaks linked to SiC bandgap transitions and carbon-rich defects. Chromaticity diagrams indicated suitability for white LED applications. Hall effect measurements showed excellent electrical properties of the as-deposited GSC film, with high carrier density and mobility, which reduced significantly after annealing, transitioning the material to a more insulating state. These findings collectively provide a comprehensive understanding of GSC thin films’ properties and their potential applications.

A facile route derived solar selective nickel-cobalt oxide thin films via spraying process

Abstract This work focuses on understanding the role of annealing temperature on the solar selective performance of nickel-cobalt oxide thin films successfully sprayed onto Al substrates using the spray pyrolysis technique. The synthesized nickel-cobalt oxide thin films (~ 725± 20 nm thick) were post annealed at (400, 500 and 600) °C. The XRD and FESEM outcomes appeared high crystalline quality with crystal grains in the range of (27 – 52) nm and improved surface morphology for the sprayed thin films. The optical properties reflect solar absorptance ~ (85.2 %) and the thermal emittance ~ (4.45 %). The hardness and the Young’s modulus were (19.1 GPa) and (104 GPa) respectively. The aforementioned results are for the film annealed at 600 °C. The prepared and post annealed nickel-cobalt oxide thin films show band gap energies in the range of (1.15 – 1.38) eV. The nickel-cobalt oxide thin films also possess excellent thermal stability at higher temperature which makes them interesting candidate for solar absorbing and thermal collector applications.

Growth of CuO NPs layers on TiO2 NTs using vacuum thermal evaporation

CuO/TiO2 composites have been reported to exhibit higher potential for various applications (electronics, energy storage, and sensor technology…). This study investigates the impact of different film thicknesses on the properties of CuO NPs on TiO2 NTs. CuO NPs were deposited onto TiO2 NTs using vacuum thermal evaporation, with thicknesses ranging from 5 to 30 nm. A quartz crystal monitor measured evaporation rate and film thickness at a substrate temperature of 350 °C. Following the deposition process, the samples were thermally treated through air annealing at 400 °C for 1 h.XRD analysis showed that all films had an anatase phase. The annealed sample also had a confirmed CuO phase, indicating good crystallinity. Crystallite size and strain varied with film thickness, assessed using the Williamson-Hall method and Rietveld refinement. The deposition and distribution of CuO on TiO2 NTs were verified using Scanning Electron Microscopy (SEM) combined with energy dispersive spectroscopy (EDS). Optimizing the materials nanostructures requires controlling film thickness and annealing. Insights from this study can improve nanomaterial fabrication techniques, which could enhance their performance in technological applications.

A new way to tune photocatalytic activity, surface morphology, and structural/optical parameters of ZrO2 thin films using different Zr sources along with annealing temperature and film thickness

A new way to tune photocatalytic activity, surface morphology, and structural/optical parameters of ZrO2 thin films using different Zr sources along with annealing temperature and film thickness

Effects of implementing dual-step nitrogen ambient for growth and post-deposition annealing of Ga2O3 films sputtered on silicon

Effects of implementing dual-step nitrogen ambient for growth and post-deposition annealing of Ga2O3 films sputtered on silicon

Plasmonic Ag Nanoparticles on SiC for Use as SERS Substrate and in Integrated Optical Sensors for Bio-Chemical Applications

Development of optical chemical sensors for the detection of specific toxic chemicals at ultratrace levels and analysis of complex mixtures is crucial for new green and safe technologies [1, 2]. Metallic structures confined at the nanoscale acquire interesting properties such as strongly localizing E fields on their surfaces through Plasmonic Resonance under stimuli of light at certain wavelengths. This nanostructures are called plasmonic structures [3–5]. This effect is exploited to amplify the optical signal obtained by the molecules of interest, located near plasmonic structures [3, 6]. Purpose of the work is the development of innovative, easy to manufacture and cheap optical active layer consisting of Plasmonic Ag Nanoparticles on a Wide Band Gap semiconductor material such as Silicon Carbide to be used as substrate for Surface Enhanced Raman Scattering or for the fabrication of integrated optical sensor for remote chemical and biological applications. In this contest, the phenomenon of Ag thin film thermal dewetting on SiC substrate was implemented to develop a simple nanoparticles synthetic approach. Scanning Electron Microscopy confirmed the formation of Ag nanoparticles by thermal annealing of thin silver film. 4-MBA was used as probe molecule for SERS phenomenon investigation. The formation of a covalent bond between the silver nanostructures, acting as plasmonic "hot spots", and the species of interest enable its detection at very low concentrations, in the range of 10-5 M or less, in both Raman and UV-Vis configurations.

High‐throughput study of X‐ray‐induced synthesis of flower‐like CuxO

AbstractCuxO with flower‐like hierarchical structures has attracted significant research interest due to its intriguing morphologies and unique properties. The conventional methods for synthesizing such complex structures are costly and require rigorous experimental conditions. Recently, the X‐ray irradiation has emerged as a promising method for the rapid fabrication of precisely controlled CuxO shapes in large areas under environmentally friendly conditions. Nevertheless, the morphological regulation of the X‐ray‐induced synthesis of the CuxO is a multi‐parameter optimization task. Therefore, it is essential to quantitatively reveal the interplay between these parameters and the resulting morphology. In this work, we employed a high‐throughput experimental data‐driven approach to investigate the kinetics of X‐ray‐induced reactions and the impact of key factors, including sputtering power, film thickness, and annealing of precursor Cu thin films on the morphologies of CuxO. For the first time, the flower‐like CuxO nanostructures were synthesized using X‐ray radiation at ambient condition. This research proposes an eco‐friendly and cost‐effective strategy for producing CuxO with customizable morphologies. Furthermore, it enhances comprehension of the underlying mechanisms of X‐ray‐induced morphological modification, which is essential for optimizing the synthesis process and expanding the potential applications of flower‐like structures.

The effect of Ar+ and N+ ion irradiation on the thermally induced evolution of the structural and magnetic properties of Co/Pt and Pt/Co bilayered stacks

The application of Co–Pt thin films as functional elements of novel nanoelectronics and spintronics devices requires the formation of a homogeneous ferromagnetic CoPt phase with tunable magnetic properties. A diffusion-controlled synthesis of this ferromagnetic phase can be implemented through the annealing of deposited Co/Pt bilayers. Apart from thermal treatment, both structural and magnetic properties of such layered stacks can be affected by ion preirradiation. In this work, we, therefore, studied the effect of a two-stage process consisting of preirradiation with 110 keV Ar+/N+ ions followed by post-annealing in vacuum at 550°С for 30 min on the evolution of the structural, chemical, and magnetic properties of Co/Pt/substrate and Pt/Co/substrate heterostructures. The results obtained for such two-stage processing were compared to those received after single-stage vacuum annealing. It was found that when ion preirradiation is followed by annealing, the diffusion-driven intermixing of Pt and Co leading to the formation of the ferromagnetic Co–Pt phase is slowed down compared to the non-irradiated samples, which is associated with the barrier effect of implanted projectiles. Furthermore, we demonstrate that preirradiation does not compromise the magnetic properties of the samples. For instance, preirradiation leads to a coercivity increase of up to 38 % compared to the non-irradiated annealed samples which is attributed to the presence of remaining paramagnetic Pt between the grains of the ferromagnetic A1-CoPt phase. We demonstrate that the applied two-stage processing (consisting of ion preirradiation followed by thermal annealing) of magnetic thin films is a promising approach for tailoring their magnetic properties such as the in-plane coercivity, saturation, and effective magnetization.