Anisotropy In Amorphous Films Research Articles

Quantification of residual stress governing the spin-reorientation transition (SRT) in amorphous magnetic thin films

Soft magnetic thin films with in-plane uniaxial magnetic anisotropy are of significant importance for a broad range of technological applications, including high-frequency power conversion. In-plane uniaxial anisotropy in amorphous films is of particular interest for ultra-low materials loss and MHz frequency operations. The present work is focused on one of the fundamental mechanisms, i.e., residual stress, that can negate the uniaxial anisotropy in amorphous films by engendering perpendicular magnetisation and hence, undermining the soft magnetic performance. It is quantified how the nature of residual stress, compressive or tensile, transforms the magnetisation from an in-plane to an out-of-plane configuration, also well-known as spin-reorientation transition (SRT). A correlation between engineered residual stress in multilayer stacks, induced by the uneven expansion of metallic/dielectric layers following a thermal-shock scheme, and SRT mechanism demonstrates tensile stress inside the films undermines the soft magnetic performance. We suggest the magnetic softness can be retained by eluding sources of tensile stress during fabrication or post-processing of the amorphous films.

Spectral Photosensitization of Optical Anisotropy in Solid Poly(Vinyl Cinnamate) Films

The possibility and features of formation of sensitized photoinduced optical anisotropy in amorphous films of poly(vinyl cinnamate) and its derivative poly(vinyl-4-metoxicinnamate) under the action of polarized light (including light that is not absorbed by polymer macromolecules themselves) have been investigated. It is found that the effect of induced optical anisotropy is based on the transfer of electron excitation energy from donor (sensitizer) molecules to acceptor molecules and is observed in the course of phototopochemical biomolecular cyclization reaction of cinnamate fragments in polymer macromolecules. The detected photoinduced anisotropy in solid films of poly(vinyl cinnamate) and its derivative poly(vinyl-4-metoxicinnamate) ensures sensitized photo-orientation of low-molecular thermotropic liquid crystals.

Anisotropy in amorphous films of cross-shaped molecules with an accompanying effect on carrier mobility: Ellipsometric and sum-frequency vibrational spectroscopic studies

Variable angle spectroscopic ellipsometry and sum-frequency vibrational spectroscopy have been used to study molecular orientations in thin films used in an organic light-emitting-diode. The films consist of sterically bulky and cross-shaped molecules that have small anisotropy in shape, 2-methyl-9,10-di(2-naphthyl)anthracene (MADN). As a result, anisotropic molecular orientation in the amorphous films has been observed with respect to the surface normal. The short axis of anthracene in MADN molecules, more or less, slightly tilts from the surface plane but preferentially close to the surface with a certain orientational distribution, while the long axis of anthracene is, on average, oriented close to the magic angle from the surface normal. This anisotropic molecular orientation gives rise to better carrier transportation properties than the isotropic orientation.

Effect of rapid thermal annealing on microstructural, magnetic, and microwave properties of FeGaB alloy films

We have performed rapid thermal annealing (RTA) experiments on crystalline and amorphous (Fe70Ga30)1−xBx films in order to understand and reduce the linewidth of ferromagnetic resonance (FMR). In the absence of cubic anisotropy in amorphous films, the effective anisotropy is small, resulting in a narrow FMR linewidth. The FMR linewidth in both crystalline and amorphous films can be further reduced by RTA. In crystalline films, a minimum FMR linewidth can be achieved by annealing the samples at a relatively high temperature for a short time. The effect is attributed to the reduction in the uniaxial anisotropy. In amorphous films, the reduction in FMR linewidth is achieved at low temperature and short annealing time. Elevated temperatures and prolong time may crystallize the amorphous structure and introduce a much large cubic anisotropy, resulting in a large FMR linewidth.

Local setting of magnetic anisotropy in amorphous films by Co ion implantation

The local setting of magnetic anisotropy by low fluence Co ion implantation in amorphous magnetic thin films is demonstrated. For a wide range of ion fluences no structural changes occur and the adjustment of anisotropy is reversible. A quantitative relationship between the anisotropy change and the atomic displacements is found. Magnetic domain investigations of the purely magnetically patterned stripes reveal an effective quasi-cubic anisotropy below a critical width for orthogonal magnetic anisotropy alignment. The method of ion-annealing allows for a local setting of anisotropy without irreversible structural and magnetic alterations.

Selective resputtering-induced anisotropy in amorphous films

Resputtering effect on the uniaxial magnetic anisotropy in amorphous GdCo films has been investigated. A sputtering apparatus has been constructed which is able to change the energy and the accommodation rate of the resputtering Ar ions independently of each other. The energy of Ar ions bombarding the substrate electrode or the film has been measured by means of a Faraday cup and has been found to be smaller than the bias voltage applied to the substrate electrode. The deposition rate of the film has been found to decrease linearly with an increase in the accommodation rate of the resputtering Ar ions. The product of the uniaxial anisotropy constant and the deposition rate has been found to be proportional to the accommodation rate of Ar ions with constant energy. This result agrees with the selective resputtering-induced anisotropy model.

3964. Selective resputtering-induced anisotropy in amorphous films. (USA)

3964. Selective resputtering-induced anisotropy in amorphous films. (USA)

Selective resputtering-induced anisotropy in amorphous films

A model will be presented to explain the bias voltage dependence of magnetic anisotropy in sputtered amorphous films of gadolinium cobalt alloys. It has been found that the magnetic anisotropy increases with bias voltage up to a critical bias voltage (∠150 V depending on the sputter gas) then decreases precipitously at higher voltages. The model used to explain this behavior is based on selective resputtering of atoms in different surface sites causing an anisotropic distribution of Gd and Co atoms with respect to the growth direction. For example, a Gd adatom in contact with three surface atom neighbors can have 0, 1, 2, or 3 cobalt neighbors. The sputtering threshold for each type of Gd adatom will be different so those with a low threshold will be selectively removed giving a structural anisotropy. This anisotropic atomic distributions can cause different kinds of anisotropy with respect to the growth direction depending on the type of amorphous film. For example, both easy-axis (GdCo) and hard-axis (GdFe) magnetic anisotropies have been observed. It may be possible to extend this model to other types of anisotropy in amorphous films.