Abstract
The local setting of magnetic anisotropy by low fluence Co ion implantation in amorphous magnetic thin films is demonstrated. For a wide range of ion fluences no structural changes occur and the adjustment of anisotropy is reversible. A quantitative relationship between the anisotropy change and the atomic displacements is found. Magnetic domain investigations of the purely magnetically patterned stripes reveal an effective quasi-cubic anisotropy below a critical width for orthogonal magnetic anisotropy alignment. The method of ion-annealing allows for a local setting of anisotropy without irreversible structural and magnetic alterations.
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