AbstractAnomalous photoresponse with negative photoconductance (NPC) is rarely observed which is quite different from the common semiconductor with positive photoconductance (PPC) as the light can induce additional carriers. NPC effect is not widely studied because the performance of the NPC is limited and the device fabrication is uncontrollable. Here, a controllable way is reported to fabricate an anomalous photoresponse device through asymmetric metal contact with the PdSe2. A mirror electrode‐enhanced vertical asymmetric contact (VAC) PdSe2 device is designed. The VAC PdSe2 device demonstrated the NPC effect in an ultra‐broadband spectral range from 637 nm to the long‐wave infrared (LWIR) 10.6 µm. Notably, the device exhibits excellent uncooled mid‐wave infrared (MWIR) and LWIR detection ability with a high photoresponsivity (R) of 128.4 AW−1 and 38.2 AW−1, respectively. Furthermore, the lateral asymmetric contact (LAC) PdSe2 device is also investigated. The LAC PdSe2 device demonstrated competitive performance including high photovoltaic responsivity up to 0.22 AW−1 and external quantum efficiency (EQE) of 67.5%, fast photoresponse speed with rise time τr = 28.7 µs and decay time τd = 31.2 µs, and anisotropic dichroic ratio (γ) of ≈1.15. The results open a new platform for studying anomalous photoresponse with high performance in uncooled LWIR photodetection.
Read full abstract