Future electronics hold a special promise for flexible, optically translucent thermoelectric devices. Here, we demonstrate the better thermoelectric performance of p-type transparent CuCrO2 crystallites by the insertion of non-magnetic Zn2+ in magnetic Cr3+ site at room and high temperatures. Doping induced increase in charge carrier density generally leads to elevated carrier scattering, which in turn diminishes the voltage generated per unit tem-perature difference and causes a decrease in the Seebeck coefficient. Balancing the Seebeck coefficient and conductivity is a crucial challenge in the design of thermoelectric materials. By introducing non-magnetic doping, the anti-ferromagnetic order of Cr3+ ions is destabilized, resulting in a modification of the spin configuration. This alteration gives rise to spin chiral interactions, which, in turn, contribute to the generation of an exceptionally large Seebeck coefficient of 582 μV/K at 100 °C. The insertion also generates anisotropic microstrains in the structure and the structural changes were investigated by XRD analysis, FTIR, and Raman spectroscopy. Carrier concentration and carrier mobility were measured by Hall measurements techniques and has shown increasing and decreasing trend respectively with the increase of the doping percentage of Zn2+. Optical studies were done by UV–Vis analysis and found the maximum band gap of 3.04 eV for 0.5 wt% doped CuCrO2 and the absorption spectra revealed the defect induced in the structure comprehending the Raman analysis. The enhancement of carrier concentration and mobility led to increased conductivity of 2096 S/m and power factor of 411 μW/mK2 for the sample 0.3 wt% at 700 °C. The Seebeck coefficient of the sample dropped as the temperature rose, but it was maintained in the range of 440–580 μV/K, which is found as the primary characteristic of Zn doping. Thermal conductivity is found as decreased with doping and the highest ZT obtained is 0.199 for 0.3 wt% doped sample at 700 °C. The higher thermoelectric performance and optical transmission at visible wavelength can be put together in optoelectronic devices.
Read full abstract