Anisotropic Magnetoresistance Research Articles

Observation of planar Hall effect in the topological insulator NaCd4As3

The observation of the planar Hall effect (PHE) illuminates the spin textures and topological properties of materials, indicating potential applications in quantum computing and electronic devices. Here, we present a study on the planar Hall transport of topological insulator NaCd4As3 single crystals. When the magnetic field is rotated within the sample plane relative to the current direction, we observe remarkable planar Hall resistivity and giant planar anisotropic magnetoresistance (AMR), both consistent with the theoretical expression of the PHE. Further analysis reveals that the orbital magnetoresistance effect, unrelated to surface electrons from topological surface states or bulk electrons from nontrivial Berry phases, lays a dominant role in the PHE in NaCd4As3. Additionally, the AMR ratio reaches −43% at 3 K under 14 T and remains −9% at room temperature, markedly exceeding that of traditional ferromagnetic metals. These findings provide a platform for understanding the PHE mechanism in topological insulators and highlight the potential of NaCd4As3 for angle and magnetic field detection applications.

Design and implementation of a nondestructive testing system for magnetic field imaging based on machine learning

This study presents the design of a nondestructive testing (NDT) system for detecting metal defects using a magnetic field sensor array. The system integrates a hardware-software detection framework that includes parallel computation and processing cores, along with multiple anisotropic magnetoresistance (AMR) sensors. These AMR sensors capture subtle variations in the magnetic field, which serve as the foundation for defect identification. The system enables synchronized data acquisition from multiple AMR sensors, achieving multi-axis data fusion and parallel signal processing. Furthermore, the detection system gathers defect features to train an NDT system based on machine learning (ML). Subsequently, ML-generated defect imaging features are processed through an imaging framework, producing magnetic field imaging (MFI) for precise defect localization. The study tested six different metal samples with various defect sizes and types to validate the system. The results demonstrate the system’s ability to accurately detect and identify different defects, highlighting the high precision of magnetic field detection and the overall effectiveness of the proposed system for NDT.

Separate magnetic and structural phase transitions in Mn50-xFexRh50 films grown on MgO

Abstract The investigation of the magnetic and structural characteristic of Mn50-xFexRh50 alloy is of physical importance due to the phase transition behavior. In this study, a series of highly ordered epitaxial films with varying Fe concentrations are grown on MgO (001) substrate. At low Fe concentrations (x=0, 2, 6), a separation between the structural phase transition and magnetic phase transition is observed. Different with the structural phase transition, the temperature-dependent magnetization presents a quite large temperature hysteresis behavior. In addition, the structural transition induces further tetragonal distortion and forms intermediate phase between B2 and L10 structure. This separated magnetic and structural phase transition has been further validated through XRD, anisotropic magnetoresistance and spin pumping measurements. Moreover, with the further increase in the Fe concentration, the Mn50-xFexRh50 films shows ferromagnetic behaviors due to the competitive magnetic exchange interaction, while the structural phase transition is suppressed.

The role of Rh spacer layer thickness on the noncollinear interlayer exchange coupling

Abstract The relationship between noncollinear interlayer exchange coupling (IEC) and magnetic anisotropic behavior in Fe/Rh/Fe trilayers is studied in detail by using magneto-optical Kerr effect (MOKE) and anisotropic magnetoresistance (AMR) techniques. It is found that the Rh spacer layer thickness strongly affects IEC and magnetic anisotropy in these trilayers. The role of Rh spacer layer thickness is shown in the oscillatory behavior in the magnitude of the magnetic anisotropy, the transition from uniaxial to four-fold anisotropy, the shift of easy axis for magnetic anisotropy, and the unusual increase in the sheet resistance. As an outcome of this study, we discuss the underlying mechanism based on the noncollinear IEC across the Fe/Rh/Fe interlayer. As a result, it has been shown that the noncollinear IEC can be controlled by the various Rh spacer thicknesses among nonmagnetic transition layers.

Electrical properties of completely compensated single-crystal Ge-on-GaAs films with two-dimension Coulomb disorder

We present electrical properties of heavily doped and completely compensated Ge films grown on semiinsulating GaAs(100) substrates by vacuum evaporation. The thin (∼100 nm) Ge films are single-crystal and characterized using temperature-dependent transport measurements, with anomalously large activation energy up to half the Ge bandgap, anisotropy of the transverse magnetoresistance, high resistivity (up to 140 Ω cm), low free charge carrier mobility (∼50 cm2/V·s), and concentration (∼1014–1015 cm−3). This behaviour is attributed to a completely compensated semiconductors arising from Ga and As impurity incorporation and large-scale potential fluctuations. Analysis suggests a two-dimensional percolative transport mechanism in Ge-on-GaAs heterostructures.

Quantifying spin-torque efficiency and magnetoresistance coefficient by microwave photoresistance in spin-torque ferromagnetic resonance

During the spin-torque ferromagnetic resonance (ST-FMR) measurement, the magnetization precession driven by the microwave field yields the radio frequency (rf) oscillating magnetoresistance and its time-averaged change (photoresistance). Here, we find that the strength of photoresistance can be directly determined by using dc bias current Idc modulating the symmetric component VS of the ST-FMR voltage spectrum. By measuring the angular dependence of photoresistance, we can quantify the in-plane and out-of-plane precession angles of ST-FMR, the actual rf current distribution in the magnetic and non-magnetic sublayers, and the magnitude of spin-torque and various magnetoresistance coefficients. These experimentally obtained values and analysis methods can more accurately quantify the spin-torque efficiency of both in-plane and out-of-plane spin polarizations by self-consistent calculation of the precession angle without harsh assumptions. And, we further confirm this universal method in three spintronic systems: the prototypical Pt/Py bilayer with anisotropic magnetoresistance (AMR), Py/Cu/Co20Tb80 spin valve trilayer with AMR and giant magnetoresistance, and [Co/Ni]3/Co/Pt multilayer with AMR and anisotropic interface magnetoresistance. This method eliminates potential deviation in calculating spin-torque efficiency by previously reported line shape analyzation and linewidth modulation methods of the ST-FMR technique and significantly extends its application range in characterizing spintronic materials and nanodevices.

Carrier-density-determined Magnetoresistance in Semimetal SrIrO3

Abstract SrIrO3, a Dirac material with a strong spin-orbit coupling (SOC), is a platform for studying topological properties in strongly correlated systems, where its band structure can be modulated by multiple factors, such as crystal symmetry, elements doping, oxygen vacancies, magnetic field, and temperature. Here, we discover that the engineered carrier density plays a critical role on the magnetoelectric transport properties of the topological semimetal SrIrO3. The decrease of carrier density subdues the weak localization (WL) and the associated negative magnetoresistance, while enhancing the SOC-induced weak anti-localization (WAL). Notably, the sample with the lowest carrier density exhibited high-field positive magnetoresistance, suggesting the presence of a Dirac cone. In addition, the anisotropic magnetoresistance (AMR) indicates the anisotropy of the electronic structure near the Fermi level. The engineering of carrier density provides a general strategy to control the Fermi surface and electronic structure in topological materials.

Anisotropic magnetoresistance of GaMnAs:Be

The effect of co-doping with Be on the magnetic anisotropy in Ga0.972Mn0.028As epitaxial layers has been studied by magnetoresistance measurements. Co-doping with Be has been shown to lead to reorientation of both easy and hard magnetic axes in GaMnAs. Measurements of the temperature dependence of the anisotropic magnetoresistance demonstrate no changes in the type of the magnetic anisotropy with the increase in temperature. The results of the study of the anisotropic magnetoresistance indicate that the parameters of the magnetic anisotropy in GaMnAs are significantly influenced by the magnitude of the compressive strain.

Impact of orbital hybridization on spin-polarized electronic transport through Ni-MAPbI3 interfaces

The solution-processed methylammonium lead tri-iodine (MAPbI3), with long spin lifetimes and large spin diffusion lengths, has merit for developing stable perovskite spin valves (PeSV) with low saturation fields. By far, it remains challenging to avoid ill-defined ferromagnet-MAPbI3 interfaces during device fabrications using solution methods and to quantify the hybridized interfacial electronic and magnetic structures. Herein, an annealing-free method was developed for the fabrication of MAPbI3 based PeSV. In comparison to a thermally annealed device, an improved room temperature magnetoresistance (MR) was achieved. We found remarkable interfacial contributions to anisotropic magnetoresistance and MR. The first-principles calculation was further adopted to quantify the interfacial spin and orbital moments. Our results suggest that the orbital hybridization and the spin transfer are remarkable for the formation of the spin-dependent interfacial density of states. It consequently affects magnetic switching behaviors. This study holds an exceptionally important role for a deep understanding of the spin-polarized electronic transport through the Ni-MAPbI3 hybridized interface.

Spin Transport Modulation of 2D Fe3O4 Nanosheets Driven by Verwey Phase Transition.

Realizing spin transport between heavy metal and two-dimensional(2D) magnetic materials at high Curie temperature (TC) is crucial to advanced spintronic information storage technology. Here, environmentally stable 2D nonlayered Fe3O4 nanosheets are successfully synthesized using a reproducible process and found that they exhibit vortex magnetic domains at room temperature. A Verwey phase transition temperature (TV) of ≈110 K is identified for ≈3nm thick nanosheet through Raman characterization and spin Hall device measurement of the Pt/Fe3O4 bilayer. The anisotropic magnetoresistance ratio decreases near TV, while both the spin Hall magnetoresistance ratio and spin mixing conductance (Gr) increase at TV. As the temperature approaches 112 K, the anomalous Hall effect ratio tends to become zero. The maximum Gr reaches ≈5 × 1015 Ω-1m-2 due to the clean and flat interface between Pt and 2D nanosheet. The observed spin transport behavior in Pt/Fe3O4 spin Hall devices indicates that 2D Fe3O4 nanosheets possess potential for high-power micro spintronic storage devices applications.

Enhanced fourfold anisotropic magnetoresistance in FeRh films through Mn doping

Anisotropic magnetoresistance (AMR) in magnetic materials is a fundamental magnetoelectric phenomenon with applications in spintronics. This study investigates AMR in FeRh and Fe0.9Mn0.1Rh alloy films. During the ferromagnetic- antiferromagnetic phase transition in pure FeRh, domain wall scattering leads to a pronounced fourfold AMR. This fourfold AMR is a unique occurrence in certain materials where the resistance varies with an angular dependence on the applied magnetic field and the direction of electrical current, exhibiting a 90-degree periodicity as opposed to the typical 180-degree periodicity observed in twofold AMR. Similarly, when 10 % of the Fe is replaced by Mn in FeRh (yielding Fe0.9Mn0.1Rh), the alloy undergoes a phase transition from ferromagnetism to ferrimagnetism. Notably, the Fe0.9Mn0.1Rh alloy exhibits more pronounced fourfold AMR during this phase transition. The enhancement of the fourfold AMR by domain wall scattering during the phase transition is a crucial factor. The magnitude of the fourfold AMR can be altered by modifying these domains with a magnetic field. Interestingly, the Fe0.875Mn0.125Rh exhibits a considerable fourfold AMR even in the ferromagnetic state, attributed to the modified electronic band structure induced by Mn doping. First-principles calculations confirm this intrinsic origin. Importantly, at low temperatures after the phase transition, the magnetic field can greatly control the fourfold AMR. These findings provide insights into the manipulation of AMR in magnetic materials and the potential applications of fourfold AMR in spintronics.

Field‐Induced Butterfly‐Like Anisotropic Magnetoresistance in a Kagome Semimetal Co3In2S2

AbstractWith the interplay between magnetism and topological bands, magnetic kagome semimetals provide promising platforms for exploring exotic correlated electronic states and quantum phenomena such as anomalous Hall effect, quantum spin liquid, and unconventional magnetoresistance, as well as driving advances in electronic and spintronic applications. Here, a field‐induced butterfly‐like anomalous anisotropic magnetoresistance (AMR) effect in an intriguing kagome semimetal Co3In2S2 is reported. The kagome‐lattice Co3In2S2 single crystals are synthesized via a polycrystal‐source chemical vapor transport approach, possessing a high carrier mobility reaching 104 cm2V−1s−1. The Co3In2S2 single crystal exhibits a canted antiferromagnetic state below 5 K, but intriguingly, it is easily transformed into a ferromagnetic state under a small external magnetic field. Furthermore, the planar Hall effect (PHE) is detected, stemming from the complex contribution of field‐induced ferromagnetism and orbital magnetoresistance. Remarkably, as the magnetic field increases, the low‐temperature magnetoresistance behavior of the Co3In2S2 reveals a butterfly‐like AMR effect with a maximum value of 850%, exhibiting a superposition of the two‐, four‐, and six‐fold AMR terms. Band structure calculations suggest that such a field‐induced butterfly‐like AMR effect may originate from the modulations of the electronic structure near the Fermi level by the magnetic moment. The findings offer a valuable platform for understanding the anomalous AMR effect and for the development of advanced spintronic devices.

In-plane anisotropic magnetoresistance and planar Hall effect in off-stoichiometric single crystal Mn3Ga

We report the observation of in-plane anisotropic magnetoresistance (AMR) and planar Hall effect in our recently discovered kagome antiferromagnetic off-stoichiometric single crystal of Mn3Ga. We found that the in-plane AMR is dominated by a sixfold symmetry at low temperature due to the kagome lattice magnetocrystalline anisotropy. However, an unusual fourfold symmetry is also revealed by the angular-dependent AMR measurements, which originates from the little distortion of the crystal accompanying the slight ferromagnetic transition. Moreover, we also found a clear planar Hall effect signal in off-stoichiometric single crystal of Mn3Ga, which may be related to the chiral anomaly, one of the signatures of the magnetic Weyl fermions.

Giant Anisotropic Magnetoresistance in Few-Layer α-RuCl3 Tunnel Junctions.

The spin-orbit-assisted Mott insulator α-RuCl3 is proximate to the coveted quantum spin liquid (QSL) predicted by the Kitaev model. In the search for the pure Kitaev QSL, reducing the dimensionality of this frustrated magnet by exfoliation has been proposed as a way to enhance magnetic fluctuations and Kitaev interactions. Here, we perform angle-dependent tunneling magnetoresistance (TMR) measurements on ultrathin α-RuCl3 crystals with various layer numbers to probe their magnetic, electronic, and crystal structures. We observe a giant change in resistance, as large as ∼2500%, when the magnetic field rotates either within or out of the α-RuCl3 plane, a manifestation of the strongly anisotropic spin interactions in this material. In combination with scanning transmission electron microscopy, this tunneling anisotropic magnetoresistance (TAMR) reveals that few-layer α-RuCl3 crystals remain in the high-temperature monoclinic phase at low temperatures. It also shows the presence of a zigzag antiferromagnetic order below the critical temperature TN ≃ 14 K, which is twice the one typically observed in bulk samples with rhombohedral stacking. Our work offers valuable insights into the relation between the stacking order and magnetic properties of this material, which helps lay the groundwork for creating and electrically probing exotic magnetic phases such as QSLs via van der Waals engineering.

Anisotropic magnetoresistance in altermagnetic MnTe

Recently, MnTe was established as an altermagnetic material that hosts spin-polarized electronic bands as well as anomalous transport effects like the anomalous Hall effect. In addition to these effects arising from altermagnetism, MnTe also hosts other magnetoresistance effects. Here, we study the manipulation of the magnetic order by an applied magnetic field and its impact on the electrical resistivity. In particular, we establish which components of anisotropic magnetoresistance are present when the magnetic order is rotated within the hexagonal basal plane. Our experimental results, which are in agreement with our symmetry analysis of the magnetotransport components, showcase the existence of an anisotropic magnetoresistance linked to both the relative orientation of current and magnetic order, as well as crystal and magnetic order. Altermagnetism is manifested as a three-fold component in the transverse magnetoresistance which arises due to the anomalous Hall effect.

Sign reversal and symmetry change of anisotropic magnetoresistance in antiferromagnetic LSMO films

The study of anisotropic magnetoresistance (AMR) holds dual significance in both theoretical and applied contexts. The underlying mechanisms of AMR remain unclear, and the phenomenon of AMR sign reversal (positive and negative transitions in values) has garnered multiple interpretations, demanding experimental verification. In this work, the effect of epitaxial strain on magnetic and transport properties of perovskite manganese oxide La0.35Sr0.65MnO3 films is investigated. The AMR demonstrates sign reversal and symmetry change behaviors. The symmetry changes of AMR stem from the competition between Zeeman energy, exchange interaction energy, and magnetocrystalline anisotropy energy. The sign reversal of AMR is attributed to the change in the density of states of spin up and spin down of conduction electrons during the magnetic phase transition induced by epitaxial strain. Our work offers experimental evidence and a reasonable explanation for the origin of the sign reversal of AMR.

Unconventional Magnetic and Magneto-Transport Properties in Quasi-2D Ni0.28TaSeS Single Crystal.

Van der Waals (vdW) magnetic materials have broad application prospects in next-generation spintronics. Inserting magnetic elements into nonmagnetic vdWmaterials can introduce magnetism and enhance various transport properties. Herein, the unconventional magnetic and magneto-transport phenomena is reported in Ni0.28TaSeS crystal by intercalating Ni atoms into nonmagnetic 2H-TaSeS matrix. Magnetic characterization reveals a canted magnetic structure in Ni0.28TaSeS, which results in an antiferromagnetic (AFM) order along the c-axis and a ferromagnetic (FM) moment in the ab-plane. The presence of spin-flop (SF) behavior can also be attributed to the canted magnetic structure. Temperature-dependent resistivity exhibits a metallic behavior with an abrupt decrease corresponding to the magnetic transition. Magneto-transport measurements demonstrate a positive magnetoresistance (MR) with a plateau that is different from conventional magnetic materials. The field-dependent Hall signal exhibits nonlinear field dependence when the material is in magnetically ordered state. These unconventional magneto-transport behaviors are attributed to the field-induced formation of a complex spin texture in Ni0.28TaSeS. In addition, it further investigated the angle dependence of MR and observed an unusual fourfold anisotropic magnetoresistance (AMR) effect. This work inspires future research on spintronic devices utilizing magnetic atom-intercalated quasi-2D materials.

Unusual Janus Bi2TeSe2 Topological Insulators Displaying Second-Harmonic Generation, Linear-in-Temperature Resistivity, and Weak Antilocalization.

Well-established knowledge about inversion-symmetric Bi2TexSe3-x topological insulators characterizes the promising new-generation quantum device. Noticeably, the inversion asymmetric phase containing different surface electronic structures may create an extra topological phenomenon pointing to a new device paradigm. Herein, Janus Bi2TeSe2 single-crystal nanosheets with an unconventional stacking sequence of Se-Bi-Se-Bi-Te are realized via chemical vapor deposition growth, which is clarified by atomically resolved AC-STEM and elemental mapping. An obvious polarization-dependent second-harmonic generation with a representative 6-fold rotational symmetry is detected due to the broken out-of-plane mirror symmetry in this system. Low-temperature transport measurements display a strange metal-like linear-in-temperature resistivity. Anomalous conductance peaks under low magnetic fields induced by the weak antilocalization effect of topological surface states and the two-dimensional transport-dominated anisotropic magnetoresistance are revealed. These findings correlate the Janus Bi2TeSe2 phase with emerging physics topics, which would inspire fresh thoughts in well-developed Bi3TexSe3-x topological insulators and open up opportunities for exploring hybrid nonlinear optoelectronic topological devices.

Enhancing atomic ordering, magnetic and transport properties of Mn2VGa Heusler alloy thin films toward negatively spin-polarized charge injection

Magnetic materials with negative spin polarization have attracted attention for their potential to increase the design freedom of spintronic devices. This study investigated the effects of off-stoichiometry on the atomic ordering, microstructure, and magneto-transport properties in Mn2+xV1−xGa (x = −0.2, 0, +0.2, +0.4) Heusler alloy films, which are predicted to have large negative spin polarization derived from a pseudo band gap in the majority spin channel. The Mn2+xV1−xGa films epitaxially grown on MgO(001) substrates exhibits variations of B2 and L21 order with the Mn concentration. A high-quality L21 ordered film was achieved in the Mn-rich composition (x = +0.2) with B2 and L21 order parameters of 0.97 and 0.86, respectively, and a saturation magnetization of 1.4 μB/f.u., which agrees with the Slater-Pauling rule. Scanning transmission electron microscopy observations showed that B2 and L21 phases coexist in Mn-poor and stoichiometric films, while the L21 phase is dominant in the Mn-rich film with small amounts of Mn–V and Mn–Ga disorders, as revealed by laboratory and anomalous X-ray diffraction. Combined first-principles calculations and anisotropic magnetoresistance analysis confirms that the addition of excess Mn preserves the high spin polarization by suppressing the formation of detrimental antisites of V atoms occupying Mn sites. Therefore, the Mn-rich composition is promising for negatively spin-polarized charge injection in Mn2VGa-based spintronic applications.

An antiferromagnetic spin phase change memory

The electrical outputs of single-layer antiferromagnetic memory devices relying on the anisotropic magnetoresistance effect are typically rather small at room temperature. Here we report a new type of antiferromagnetic memory based on the spin phase change in a Mn-Ir binary intermetallic thin film at a composition within the phase boundary between its collinear and noncollinear phases. Via a small piezoelectric strain, the spin structure of this composition-boundary metal is reversibly interconverted, leading to a large nonvolatile room-temperature resistance modulation that is two orders of magnitude greater than the anisotropic magnetoresistance effect for a metal, mimicking the well-established phase change memory from a quantum spin degree of freedom. In addition, this antiferromagnetic spin phase change memory exhibits remarkable time and temperature stabilities, and is robust in a magnetic field high up to 60 T.