Anisotropic Hall Research Articles

In-plane anisotropic magnetoresistance and planar Hall effect in off-stoichiometric single crystal Mn3Ga

We report the observation of in-plane anisotropic magnetoresistance (AMR) and planar Hall effect in our recently discovered kagome antiferromagnetic off-stoichiometric single crystal of Mn3Ga. We found that the in-plane AMR is dominated by a sixfold symmetry at low temperature due to the kagome lattice magnetocrystalline anisotropy. However, an unusual fourfold symmetry is also revealed by the angular-dependent AMR measurements, which originates from the little distortion of the crystal accompanying the slight ferromagnetic transition. Moreover, we also found a clear planar Hall effect signal in off-stoichiometric single crystal of Mn3Ga, which may be related to the chiral anomaly, one of the signatures of the magnetic Weyl fermions.

Anisotropic three-dimensional quantum Hall effect in topological nodal-line semimetals

Anisotropic three-dimensional quantum Hall effect in topological nodal-line semimetals

Flexible anisotropic magnetoresistive sensors for novel magnetic flux leakage testing capabilities

Rigid magnetic field sensors such as anisotropic magnetoresistive (AMR), giant magnetoresistive (GMR) and Hall sensors have been used for years and have become industry standard for electromagnetic non-destructive testing (NDT). Recent technological developments in the field of flexible electronics allow for the fabrication of reshapeable magnetic field sensors on flexible substrates via thin-film deposition or printing. The magnetic properties of these sensors have comparable characteristics to industry-standard rigid magnetic field sensors, with the added ability of adapting to the surface of complex components and scanning in contact with the sample surface. This improves defect detectability and magnetic signal strength by minimizing the scanning lift-off (LO) distance. In this article flexible AMR sensors mounted on a rotative mechanical holder were used to scan a semi-circular ferromagnetic sample with 3 reference defects via magnetic flux leakage (MFL) testing, thus demonstrating the applicability of this type of sensors for the scanning of curved samples. In order to benchmark the performance of these sensors in comparison to industry standard rigid magnetic field sensors, a ferromagnetic sample with 10 reference defects of different depths was scanned employing flexible AMR and rigid GMR sensors. Defects with depths ranging from 110μm up to 2240μm were detected with an signal-to-noise ratio (SNR) of 2.7 up to 27.9 (for flexible AMR sensors) and 6.2 up to 72.3 (for rigid GMR sensors), respectively. A 2D magnetometer mapping of the sample with a spatial scanning step of 10×50μm2 (flexible AMR) and 16×100μm2 (rigid GMR) was obtained. The results show that this type of sensor can be used for high-resolution and high-detail mapping of defects on the surface of planar and non-planar ferromagnetic samples since the scanning lift-off distance is equal to the substrate thickness of 20μm for in-contact scanning. The SNR comparison between flexible and rigid sensors shows that the performance of the flexible AMR sensors employed is not very far behind the performance of the rigid GMR sensors used.

Anomalous Hall effect and magnetic transition in the kagome material YbMn6Sn6

We investigate the magnetic and transport properties of a kagome magnet YbMn6Sn6. We have grown YbMn6Sn6 single crystals having a HfFe6Ge6 type structure with ordered Yb and Sn atoms, which is different from the distorted structure previously reported. The single crystal undergoes a ferromagnetic phase transition around 300 K and a ferrimagnetic transition at approximately 30 K, and the magnetic transition at low temperature may be correlated to the ordered Yb sublattice. Negative magnetoresistance has been observed at high temperatures, while the positive magnetoresistance appears at 5 K when the current is oriented out of kagome plane. We observe a large anisotropic anomalous Hall effect with the intrinsic Hall contribution of 141 Ω−1cm−1 for σzxint and 32 Ω−1cm−1 for σxyint , respectively. These values are similar to those in YMn6Sn6 with the same anisotropy. The magnetic transition and anomalous Hall behavior in YbMn6Sn6 highlights the influence of the ordered Yb atoms and rare earth elements on its magnetic and transport properties.

Anisotropic magnetoresistance probed by non-resonant microwave absorption in exchange-biased NiFe/IrMn structures

Sharp change of non-resonant microwave absorption was found in exchange-biased NiFe/IrMn and NiFe/Cu/IrMn structures possessing anisotropic magnetoresistance (AMR) and planar Hall effect (PHE). Angular dependence of the microwave detected AMR and contribution of the domain expansion to AMR microwave signal were analyzed. Decrease in the microwave absorption signal caused by Cu spacer between ferromagnetic NiFe and antiferromagnetic IrMn layers was observed, when NiFe and IrMn layers become exchange decoupled. Additional characterization of the electric transport was proved by asymmetry of resonant line. Sensitivity of the microwave AMR method is enough high to detect magnetic fields of microTesla level, that provides remote detection with a sensitivity corresponding to standard galvanic sensors. Developed technique is promising for wireless AMR sensor technology providing coordinate and angular field measurements through remote microwave absorption.

Quadrupole anomalous Hall effect in magnetically induced electron nematic state

Berry phases in both momentum and real space cause transverse motion in itinerant electrons, manifesting various off-diagonal transport effect such anomalous and topological Hall effects. Although these Hall effects are isotropic within the plane perpendicular to the fictitious magnetic field, here, we report the manifestation of the anisotropic linear anomalous Hall effect (AHE) in the spinel oxide NiCo2O4 epitaxial film. The unconventional Hall effect indicates a quadrupole dependence on the in-plane current direction being added to the uniform AHE. Moreover, its sign can be manipulated just by magnetic-field cooling. The anisotropic effect is attributed to an electron nematic state originating from a deformed electronic state owing to an extended magnetic toroidal quadrupole and ferrimagnetic order.

Cluster-assembled superatomic crystals for chirality-dependent charge-to-spin conversion

In chiral materials, spins and chirality are coupled via spin-orbit interaction, provoking a fast-growing field of chiral spintronics. Compared with the widely explored chiral molecules, exploration of chirality-dependent spin effects in crystals and supramolecules remain limited. Here we assemble chiral superatomic crystals MXTe4 (M = transition metal; X = Ga or Ge) using telluride tetrahedra clusters as building blocks. Distinct from atomic crystals, these assembled monolayers have tunable symmetries and electronic characteristics by tilting the tetrahedral units through the variation of inter-cluster interaction. Dresselhaus-type spin textures and anisotropic spin Hall effect with inversed sign of spin current under opposite geometrical handedness are demonstrated in these chiral monolayers by symmetry analysis and verified by ab initio calculations. These results provide an innovative paradigm for assembling superatomic crystals with designated symmetry and hierarchical structures to access the chirality-driven quantum effects.

Spin transport properties of spinel vanadate-based heterostructures

Spin–orbit coupling and breaking of inversion symmetry are necessary ingredients to enable a pure spin current-based manipulation of the magnetization via the spin–orbit torque effect. Currently, magnetic insulator oxides with non-dissipative characteristics are being explored. When combined with non-magnetic heavy metals, known for their large spin–orbit coupling, they offer promising potential for energy-efficient spin-orbitronics applications. The intrinsic electronic correlations characterizing those strongly correlated oxides hold the promises to add extra control-knobs to the desired efficient spin-wave propagation and abrupt magnetization switching phenomena. Spinel vanadate FeV2O4 (FVO) exhibits several structural phase transitions, which are accompanied by an intricate interplay of magnetic, charge, and orbital orderings. When grown as a thin film onto SrTiO3, the compressive strain state induces a perpendicular magnetic anisotropy, making FVO-based heterostructures desirable for spin-orbitronics applications. In this study, we have optimized the deposition of stoichiometric and epitaxial Pt/FVO heterostructures by pulsed laser deposition and examined their spin-related phenomena. From angle-dependent magnetotransport measurements, we observed both anisotropic magnetoresistance and spin Hall magnetoresistance (SMR) effects. Our findings show the SMR component as the primary contributor to the overall magnetoresistance, whose high value of 0.12% is only comparable to properly optimized oxide-based systems.

Highly Anisotropic Even-Denominator Fractional Quantum Hall State in an Orbitally Coupled Half-Filled Landau Level.

The even-denominator fractional quantum Hall states (FQHSs) in half-filled Landau levels are generally believed to host non-Abelian quasiparticles and be of potential use in topological quantum computing. Of particular interest is the competition and interplay between the even-denominator FQHSs and other ground states, such as anisotropic phases and composite fermion Fermi seas. Here, we report the observation of an even-denominator fractional quantum Hall state with highly anisotropic in-plane transport coefficients at Landau level filling factor ν=3/2. We observe this state in an ultra-high-quality GaAs two-dimensional hole system when a large in-plane magnetic field is applied. By increasing the in-plane field, we observe a sharp transition from an isotropic composite fermion Fermi sea to an anisotropic even-denominator FQHS. Our data and calculations suggest that a unique feature of two-dimensional holes, namely the coupling between heavy-hole and light-hole states, combines different orbital components in the wave function of one Landau level, and leads to the emergence of a highly anisotropic even-denominator fractional quantum Hall state. Our results demonstrate that the GaAs two-dimensional hole system is a unique platform for the exploration of exotic, many-body ground states.

Enhanced magnetic anisotropy induced by praseodymium ferromagnetic order and anomalous transport properties in PrMn2Ge2 single crystals

Anisotropic magnetization and anomalous electrical transport properties of flux-grown $\mathrm{Pr}{\mathrm{Mn}}_{2}{\mathrm{Ge}}_{2}$ single crystals were investigated. The grown crystals exhibit strong magnetic anisotropy with easy magnetization along the $c$ axis. Linear magnetoresistance (MR) and a conventional anomalous Hall effect (AHE) are observed for $H\text{//}c$ and $I\text{//}b$ in contrast to a nonlinear positive MR and a large planar topological Hall effect (PTHE) observed for $H\text{//}a$ and $I\text{//}b$. The anisotropy of the magnetic and electrical transport properties is increased as temperature decreases because magnetic ordering of Pr atoms brings about an increase of the saturation magnetic field of nonlinear MR and the critical field for the maximum values of PTHE. A scaling analysis using the Tian-Ye-Jin model suggests that the AHE in this compound has a larger intrinsic contribution compared to the extrinsic contribution. The nonlinear positive MRs are attributed to the field-induced nontrivial spin textures. The PTHE is related to the real-space skyrmionic bubbles and the noncoplanar spin texture with nonzero spin chirality. These results demonstrate a magnetic field induced anisotropic magnetoresistance and Hall resistivity and its tunability by the ferromagnetic ordering of rare earth atoms in conical-ordered magnets.

Planar Hall effect in the quasi-two-dimensional topological semimetal candidate In0.93TaSe2

Here, we report the systematic study on the planar transport properties of the quasi-two-dimensional (quasi-2D) topological nodal-line semimetal candidate In0.93TaSe2. When rotating magnetic field in the plane, the anisotropic longitudinal resistance and planar Hall resistance are clearly observed and can be well described by the theoretical formulation of the planar Hall effect (PHE). Further analysis demonstrates that the anisotropic orbital resistance rather than the topological-nontrivial chiral anomaly plays a dominant role on the PHE in In0.93TaSe2. Our study provides another platform for understanding the mechanism of PHE, which may also be valuable for future planar Hall sensors based on quasi-2D materials.

Comparing spin injection in Fe75Co25/Bi2Te3 at GHz and optical excitations

Spin-to-charge conversion (S2CC) processes in thin-film heterostructures have attracted much attention in recent years. Here, we describe the S2CC in a 3D topological insulator Bi2Te3 interfaced with an epitaxial film of Fe75Co25. The quantification of spin-to-charge conversion is made with two complementary techniques: ferromagnetic resonance based inverse spin Hall effect (ISHE) at GHz frequencies and femtosecond light-pulse induced emission of terahertz (THz) radiation. The role of spin rectification due to extrinsic effects like anisotropic magnetoresistance (AMR) and planar Hall effects (PHE) is pronounced at the GHz timescale, whereas the THz measurements do not show any detectible signal, which could be attributed to AMR or PHE. This result may be due to (i) homodyne rectification at GHz, which is absent in THz measurements and (ii) laser-induced thermal spin current generation and magnetic dipole radiation in THz measurements, which is completely absent in GHz range. The converted charge current has been analyzed using the spin diffusion model for the ISHE. We note that regardless of the differences in timescales, the spin diffusion length in the two cases is comparable. Our results aid in understanding the role of spin pumping timescales in the generation of ISHE signals.

Modulating Exchange Bias, Anisotropic Magnetoresistance, and Planar Hall Resistance of Flexible Co/MnN Epitaxial Bilayers on Mica by Bending Strain.

The integration of ferromagnetic/antiferromagnetic bilayers with exchange bias effect on flexible substrates is crucial for flexible spintronics. Here, the epitaxial Co/MnN bilayers are deposited on mica by facing-target sputtering. A large in-plane exchange bias field (HEB) of 1800 Oe with a coercive field (HC) of 2750 Oe appears in the Co (3.8 nm)/MnN (15.0 nm) bilayer at 5 K after field cooling from 300 to 5 K. Effective interfacial exchange energy Jeff of the Co/MnN bilayer is 0.83 erg/cm2. The strain-induced maximum increase of HEB and HC reaches 18% and 21%, respectively, in the Co(3.8 nm)/MnN(15.0 nm) bilayer. Strain-modulated HEB is attributed to the change of interfacial exchange coupling between Co and MnN layers. HEB is inversely proportional to Co thickness but independent of MnN thickness. The change of HEB is less than 5% after 100 bending cycles, indicating mechanical durability. The out-of-plane exchange bias also appears since Co spins are not fully reversed due to the strong pinning effect. Anisotropic magnetoresistance (AMR) and planar Hall resistance (Rxy) show obvious hysteresis due to HEB. Exchange bias-induced phase difference of AMR and Rxy almost remains unchanged at different bending strains. The results provide the basis for understanding the bending strain tailored exchange bias.

Highly anisotropic geometrical Hall effect via f−d exchange fields in doped pyrochlore molybdates

When a conduction electron couples with a non-coplanar localized magnetic moment, the realspace Berry curvature is exerted to cause the geometrical Hall effect, which is not simply proportional to the magnetization. So far, it has been identified in the case mostly where the non-coplanar magnetic order is present on the sublattice of conduction electrons. Here, we demonstrate that the geometrical Hall effect shows up even without long-range magnetic order of conduction electrons, as induced by non-coplanar exchange fields from the localized magnetic moments, in hole-doped phyrochlore molybdates. We find that the geometrical Hall effect is markedly anisotropic with respect to the applied magnetic field direction, which is in good accordance with the field-dependent magnitude and sign change of the real-space scalar spin chirality of local Tb moments. These results may facilitate the understanding of emergent electromagnetic responses induced by the Kondo-like coupling between conduction electrons and local spins in a broad material class.

Berry curvature induced antisymmetric in-plane magneto-transport in magnetic Weyl EuB6

In-plane transport properties, including anisotropic magnetoresistance (AMR) and planar Hall effect (PHE), are of great interest in electrical transport and spintronic applications. Unconventional transport behavior emerging from the topological physics has been intensively studied and very much desired. In this study, a large AMR of −18% at a very low magnetic field of 0.2 T is observed in a soft magnetic Weyl semimetal EuB6 based on the characteristics of both high magnetization and large magnetoresistance. Furthermore, the intrinsic antisymmetric AMR and PHE are unambiguously observed and interpreted as the modification in conductivity owing to the Berry curvature in a tilted Weyl system instead of the out-of-plane magnetic field component. Our study provides a strategy for low-magnetic-field applications of large AMR and enriches the transport physics of spintronic devices.

Disorder driven variations in magnetoresistance and planar Hall effect in Bi2Te3 thin films

The degenerately doped sesquichalcogenide Bi2Te3, a well-known thermoelectric material, has attracted much attention in recent years as a topological insulator in which conducting surface states lead to exotic electronic transport. Here we report the observation of anisotropic magnetoresistance (AMR) and planar Hall effect (PHE) in polycrystalline thin films of Bi2Te3 over a broad range of temperature and magnetic field strength. The values of AMR, PHE and the Hall mobility (μH) are compared with results of similar measurements on single crystals and epitaxial films of Bi2Te3, where these properties are understood in the framework of electronic transport in the topologically protected conducting surface states. Our textured polycrystalline films show a robust metallic character with a carrier density (ns) and mobility μH of 9×1020 cm−3 and 16.7 cm2V−1s−1 respectively. This carrier density is higher and the mobility lower by an order of magnitude compared to the reported values of ns and μH in epitaxial films and single crystals. However, we see a comparable AMR and PHE in our films for which the concept of conducting surface states is ill-defined due to their polycrystallinity and disordered structure. We suggest that an anisotropic backscattering of charge carriers in the strongly spin – orbit coupled electronic states of this heavy-metal-based non-magnetic compound may lead to the measured resistivity anisotropy. The observation of AMR and PHE in polycrystalline films may be important for scalable production of Bi2Te3 based AMR and PHE sensors of magnetic fields.

Manipulating the magnetic and transport properties by CuIr thickness in CoFeB/CuIr/IrMn multilayers

In this study, it was investigated how the magnetic and electrical properties of the exchange biased multilayers are affected by the Pt and CuIr spacer layer thicknesses. For this purpose, CoFeB/NM/IrMn sample stacks which can be used as magnetic field sensors based on the anisotropic magnetoresistance and planar Hall effect (PHE) were designed. The magnetic and electrical results showed an unexpected behavior to the variations in the spacer layer thickness when a CuIr spacer layer was used instead of a Pt spacer layer in terms of the properties of exchange bias, anisotropic magneto-resistance voltage and PHE voltage. This phenomenon is explained by the layer interdiffusion between CuIr and IrMn layers.

High-harmonic spectroscopy of light-driven nonlinear anisotropic anomalous Hall effect in a Weyl semimetal

Weyl semimetals are promising quantum materials that offer unique topological properties. Lately, it has been shown that laser-driven electron dynamics have characteristic signatures in two-dimensional and three-dimensional Dirac semimetals. The transition from Dirac to Weyl semimetal requires the breaking of either inversion or time-reversal symmetry. The present work shows that the laser-driven electron dynamics in a Weyl semimetal with broken time-reversal symmetry has intriguing features in its high-harmonic spectrum. It is found that the parity and magnitude of the non-zero Berry curvature's components control the direction and strength of the anomalous current, which leads to the generation of the anomalous odd harmonics. We demonstrate that the non-trivial topology of the Berry curvature in time-reversal symmetry broken quantum materials can be probed by measuring the polarisation of the emitted anomalous odd harmonics. Our findings unequivocally illustrate that laser-driven electron dynamics leads to the generation of nonlinear anisotropic anomalous Hall effect in time-reversal symmetry broken quantum materials on an ultrafast timescale.

Tunable spin–charge conversion in class-I topological Dirac semimetals

We theoretically demonstrate that class-I topological Dirac semimetals (TDSMs) can provide a platform for realizing both electrically and magnetically tunable spin–charge conversion. With time-reversal symmetry, the spin component along the uniaxial rotation axis (z axis) is approximately conserved, which leads to an anisotropic spin Hall effect; the resulting spin Hall current relies on the relative orientation between the external electric field and the z axis. The application of a magnetic field, on the other hand, breaks time-reversal symmetry, driving the TDSM into a Weyl semimetal phase and, consequently, partially converting the spin current to a charge Hall current. Using the Kubo formulas, we numerically evaluate the spin and charge Hall conductivities based on a low-energy TDSM Hamiltonian together with the Zeeman coupling. Besides the conventional tensor element of the spin Hall conductivity σxyz, we find that unconventional components, such as σxyx and σxyy, also exist and vary as the magnetic field is rotated. Likewise, the charge Hall conductivity also exhibits appreciable tunability upon variation of the magnetic field. We show that such tunability—as well as large spin–charge conversion efficiency—arises from the interplay of symmetry and band topology of the TDSMs.

Temperature dependent magnetostatic and dynamic properties of soft magnetic FeGaB/Al2O3 thin films for microwave applications

Iron Gallium Boron (FeGaB) thin film is one of the low-loss self-biased soft magnetic films. In this report, the temperature dependent magnetostatic and dynamic properties of FeGaB/Al2O3 composite soft magnetic thin films were studied. The analysis of surface roughness, crystal orientation and magnetostatic properties indicate that the grain size and anisotropy of the thin film increase after annealing which temperature is from 573 K to 773 K. The ferromagnetic resonance spectra of different annealed thin films suggest the damping factor, linewidth and resonance magnetic fields all increase with the increased annealing temperature, which is attributed to the change of film crystallization. Moreover, the angle dependent anisotropic magnetoresistance and planar Hall effect show the percentage of magnetoresistance change increased due to the high annealing temperature.