Sn ions of 260 keV and with doses between 5×1013 Sn+/cm2 and 6×1015 Sn+/cm2 were implanted into 〈001〉 and 〈100〉 oriented TiO2 single-crystals at 300 and 1100 K, either along the crystal axis or 16° off axis. Annealing experiments were performed at 900, 1000 and 1100 K. The Sn profiles and the lattice location of Sn were determined by Rutherford backscattering and channeling (RBS-C). Angular scan measurements for low dose implants revealed Sn dip curves, which were wider (about 10% in 〈001〉 and 5% in 〈100〉) and deeper (about 20% to 50%) than the Ti dip curves. With increasing Sn dose the absolute values of the widths and the minimum yields increased due to radiation damage. The difference in the angular widths decreased while the minimum yields of Sn were still smaller than those of Ti, especially for channeled implants with reduced damage levels at similar doses. Annealing to 900 and 1000 K restored the differences of the widths. Annealing to 1100 K and implantation at 1100 K lead to appreciable diffusion of Sn, and about 93% and 78%, respectively, of the diffused component in the tail region was substitutional on Ti lattice sites while the difference of the angular widths of the near-surface component increased to 20%. The dip curves of the as-implanted and near surface Sn component being wider and deeper than those of Ti indicate that coherent Sn-precipitates may form, revealing their own channeling pattern.