Abstract
Rutherford backscattering (RBS), dechanneling and angular scan measurements with 2 MeV 4He + ions have been performed to investigate molecular-beam epitaxially (MBE)-grown cubic GaN and In x Ga 1 − x N layers on semi-insulating GaAs (0 0 1) substrates. The thickness of the epitaxial layers and the In concentration were determined by RBS, the crystalline quality by ion-channeling measurements. The predominant defect type was determined to be dislocations. Due to the lack of a perfect crystal we used an approximation for the minimum yield given by Lindhard and Barrett to normalize the measured minimum yields. The determined concentration of dislocations varies between 6×10 10 and 2.2×10 11 cm −2. Furthermore, a mosaic spread of crystallites was detected with angular scan measurements. Both the concentration of dislocations and the distribution of crystallite orientations do not show a significant dependence on the In concentration.
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