This paper deals with the analysis of the dynamic behavior of a hydrogenated amorphous silicon based thin-film transistor and with amorphous silicon technology as an alternative technique for the implementation of amorphous silicon based digital systems for active matrix liquid crystal displays and solar cells. It presents a model that considers the channel charge and its transient characteristics using the charge oriented model. The calculated dependences of capacitances on bias voltages are given taking into account the density of states of the amorphous silicon. An amorphous silicon based inverter is taken as a case study. The proposed analysis will contribute to develop accurate and efficient models that help simulators to target amorphous silicon devices in a practical design.