Molecular dynamics (MD) simulation is used to study the subsurface quality and material removal of single crystal silicon with a diamond tool during ultrasonic elliptical vibration assisted cutting (UEVAC), 1D ultrasonic vibration assisted cutting (1D UVAC) and traditional cutting (TC) process. In the simulations, a long-range analytical bond order potential is used to describe the interaction inside the silicon specimen, providing a more accurate depiction of the atomic scale mechanisms of ductile plasticity, brittle fracture, and structural changes in silicon. The results show that UEVAC and 1D UVAC in cutting brittle material silicon causes a much smaller cutting force, much lower von Mises stress at the subsurface, larger material remove rate, lower compressive normal stress and and smaller shear stress In addition, the hydrostatic stress of subsurface for TC and 1D UVAC is much higher than that for UEVAC, which results in fewer Si-II and bct5-Si formed from the original Si-I in UEVAC. Moreover, the number of other atoms for UEVAC is overall smaller than those of using TC and 1D UVAC, which confirms that UEVAC produces a better subsurface. And atomic flow field analysis shows that the UEVAC tends to cut silicon in a more ductile mode. Besides, the temperature in front of tool edge and below the tool flank face of TC is much higher. This means that 1D UVAC and UEVAC have a positive effect on the tool life. However, the temperature in subsurface zone is overall larger, which reveals that 1D UVAC and UEVAC have a negative effect on the subsurface temperature.