Исследование с помощью молекулярной динамики образования димеров на поверхности (001) GaAs при низких температурах

Abstract

The simulation of dimers formation during the low-temperature reconstruction of GaAs (001) surface terminated with Ga or As atoms was performed by the molecular dynamics method using the analytical Bond-Order Potential based on quantum mechanical theory incorporating both σ- and π- bonds between atoms. A decrease in values of potential energy of the atoms during formation of isolated surface dimer have been determined. It has been found that potential energy of an atom in As-dimer is several tenths of an eV lower than in Ga-dimer. Kinetics of the initial stages of Ga-dimers formation in the temperature range of 25 - 40 K was studied. It was found that the characteristic thermal activation energy of single isolated Ga-dimers formation is ~ 29 meV, which is lower than the same value for As-dimers (~ 38 meV). Time constants characterizing the average rate of transformation of one dimer into a chain of two dimers at temperature range of 28 - 37 K were estimated. Inverse values of these parameters for paired Ga- and As-dimers are in the ranges of 10^11 – 10^12 s^-1 and 10^9 – 10^10 s^-1, respectively, while corresponding parameters for the formation of single dimers are in the ranges of 4·10^6 – 10^8 s^-1 and 1.4·10^6 – 7.4·10^7 s^-1.