Performance Of Amplifier Research Articles

A Method for Reducing Offset in CMOS Operational Amplifiers

In the development of integrated circuits, operational amplifiers are indispensable basic units CMOS operational amplifiers are the core components in analog integrated circuits, which are widely used in signal acquisition, data processing, communications and other fields. components in analog integrated circuits, which are widely used in signal acquisition, data processing, communications and other fields, and their performance has a direct impact on the accuracy and stability of the entire system. With the continuous development of electronic technology, CMOS operational amplifiers play a vital role. operational amplifiers play a vital role in many fields. However, the misalignment problem has been one of the key factors affecting the performance of However, the misalignment problem has been one of the key factors affecting the performance of CMOS operational amplifiers. This paper introduces the basic principles of CMOS operational amplifiers, thoroughly studies the phenomenon of CMOS operational amplifiers' misalignment. This paper introduces the basic principles of CMOS operational amplifiers, thoroughly studies the phenomenon of CMOS operational amplifiers' misalignment, the definition and sources of the misalignment voltage and its effects, and analyzes the main reasons for its generation, including device mismatch, process deviation, and so on. In this paper, we summarize several methods to reduce distortion from dynamic distortion elimination technology and design and process optimization, which can effectively reduce the distortion voltage of CMOS op amps. The main dynamic misalignment elimination techniques are chopping and auto-zeroing, as well as a special form of auto-zeroing, i.e., correlation dual- sampling technique. Design and process optimization includes two methods of device selection and matching optimization and circuit topology design.

Methods and Designs for Improving Operational Amplifier Performance

This paper reviews recent improvements in operational amplifier design, focusing on key performance aspects such as noise reduction, gain enhancement, gain-bandwidth product improvement, accuracy enhancement, slew rate improvement, and bandwidth increase. The article begins by explaining the fundamental principles of operational amplifiers, including open-loop gain, bandwidth, and noise sources. It then explores various design modifications aimed at enhancing specific characteristics. Five innovative designs are presented: a CMOS operational amplifier with high gain and output swing, a two-stage amplifier with improved unity gain bandwidth, a highly linear and high-gain operational amplifier using cross-coupled differential pairs and positive feedback, a high-gain rail-to-rail operational amplifier with folded cascade structure, and an operational transconductance amplifier with enhanced gain-bandwidth product and slew rate. Each design is described in terms of its unique features, circuit structure, and performance improvements. The paper highlights the continuous evolution of operational amplifier technology to meet the increasing demands of modern electronic applications across various fields.

High-temperature ultraviolet photodetector and amplifying integrated circuits based on AlGaN/GaN heterostructure

Abstract In this work, an ultraviolet (UV) photodetection and amplifying integrated circuit (IC) based on an AlGaN/gallium nitride (GaN) heterostructure is demonstrated. The IC consists of a metal-heterostructure-metal photodetector (MHM-PD) and a high-electron-mobility transistor (HEMT)-based amplifier. The photoresponse of the MHM-PD increases at elevated temperatures due to the spatial separation of the photocarriers under the polarization electric field at the AlGaN/GaN heterointerface, as well as the photo-enhanced leakage current through the metal-heterostructure junction. At 250 °C, MHM-PD achieves a peak photoresponsivity of 14.5 A W−1 and a UV-to-visible rejection ratio of 104. As the thermal chuck temperature increases from 25 °C to 250 °C, the performance of the HEMT-based amplifier shows good thermal stability. Finally, the IC achieves a photoresponse of over 106 V W−1 and a switching frequency of 50 kHz at 250 °C with rise and decay time constants of 3.95 μs and 2.8 μs, respectively. These results show that the IC has a high-sensitivity and high-speed UV detection capability.

Suppression of parasitic lasing in erbium doped thin film lithium niobate waveguide amplifier by integrated wavelength division multiplexer

Photonic integrated circuits based erbium doped amplifiers have attracted great interest due to their compact footprint, high gain in the telecom C-band, and high scalability for functional integration. In this work, a wavelength division multiplexer integrated erbium doped waveguide amplifier fabricated on the thin film lithium niobate on insulator platform is demonstrated. An on-chip saturated power of 10 dBm with the net gain around 10 dB is achieved from the monolithically integrated amplifier chip with the footprint of only 3 × 5 mm2. In particular, the suppression of parasitic lasing in the waveguide amplifier is realized thanks to the spectral response of the integrated wavelength division multiplexer. Theoretical analysis of parasitic lasing on amplifier performance is also conducted. The demonstrated integrated erbium doped waveguide amplifier will find great use in various applications based on the thin film lithium niobate on an insulator platform.

Improving a Ka-Band Integrated Balanced Power Amplifier Performance by Compensating Quadrature Hybrid Mismatch Effects

Improving a <i>Ka</i>-Band Integrated Balanced Power Amplifier Performance by Compensating Quadrature Hybrid Mismatch Effects

Design and Analysis of Miller Compensated Two-Stage Operational Amplifier

Abstract. With the development of integrated circuit technology, the size of electronic equipment continues to reduce, and speed continues to increase. Operational amplifiers are the key circuit in analog ICs, and the required performance of operational amplifiers is also increasingly high, research and design of high-performance operational amplifiers has become one of the key topics of today's research. A CMOS two-stage operational amplifier with high unity-gain bandwidth is analysed and designed with an appropriate Miller-compensation technique in this research to improve the frequency characteristics and stability. The design is based on 180nm CMOS process. Its performance is simulated and analysed in Cadence software environment. The performance parameters are shown by simulation results that the amplifier has a gain of 61.81dB, a GB (unity-gain bandwidth) of 907.42MHz and a phase margin of 75.02. The experimental results show that it achieves high unity-gain bandwidth while ensuring gain and stability. Through this study, the principles of two-stage operational amplifiers and their compensation as well as the design and simulation are shown in detail in both theoretical and experimental sections.

A Review of Ku-Band GaN HEMT Power Amplifiers Development.

This review article investigates the current status and advances in Ku-band gallium nitride (GaN) high-electron mobility transistor (HEMT) high-power amplifiers (HPAs), which are critical for satellite communications, unmanned aerial vehicle (UAV) systems, and military radar applications. The demand for high-frequency, high-power amplifiers is growing, driven by the global expansion of high-speed data communication and enhanced national security requirements. First, we compare the main GaN HEMT process technologies employed in Ku-band HPA development, categorizing the HPAs into monolithic microwave integrated circuits (MMICs) and internally matched power amplifier modules (IM-PAMs) and examining their respective characteristics. Then, by reviewing the literature, we explore design topologies, major issues like oscillation prevention and bias circuits, and heat sink technologies for thermal management. Our findings indicate that silicon carbide (SiC) substrates with gate lengths of 0.25 μm and 0.15 μm are predominantly used, with ongoing developments enabling MMICs and IM-PAMs to achieve up to 100 W output power and 30% power-added efficiency. Notably, the performance of MMIC power amplifiers is advancing more rapidly than that of IM-PAMs, highlighting MMICs as a promising direction for achieving higher efficiency and integration in future Ku-band applications. This paper can provide insights into the overall key technologies for Ku-band GaN HPA design and future development directions.

Design of low noise amplifier based on tuneable active inductor and capacitor for bluetooth applications

Active components such as active inductors and active capacitors have been used to replace their passive counterparts, especially in radio frequency modules. Besides saving colossal silicon area, active inductors are power saviors, tuneable, and provide large inductance ranges. This paper presents the evaluation and performance of a low noise amplifier (LNA) implemented using only active components. The active inductor has a high inductance tunability range from 848 nH to 1660 nH, resulting in a frequency range from 1.85 GHz to 3.02 GHz. The active inductor's quality factor is 11, with a maximum power dissipation of 208.1 µW from a 0.5 V DC power supply. The LNA provides a voltage gain of 8.76 dB with a noise figure of 8.21 dB while consuming 779.16 µW from a 0.85 V supply. The achieved frequency range is commonly used for various wireless communication applications, including Wi-Fi and Bluetooth.

Investigation of Device- and Circuit-Level Reliability of Inverse-Mode Silicon-Germanium Heterojunction Bipolar Transistors.

The reliability of inverse-mode silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) under dc stress and its potential impact on the performance of basic analog amplifiers are investigated. In order to properly reflect the stress effects in various circuit applications, the degradations under three different configurations (active bias, diode connection, and off state) were experimentally characterized with the stress voltages applied up to 3000 s for each case. Based on the changes in the Gummel response, the degradations in device parameters such as current gain (β), transconductance (gm), and base-to-emitter resistance (rπ) were extracted and compared with the forward-mode counterpart. In addition, with the use of a small-signal equivalent model of a SiGe HBT, simple single-stage analog amplifiers were simulated as representative examples and their circuit-level performance metrics including gain and bandwidth were studied to estimate degradation characteristics with accumulated stress. It was found that transimpedance gain decreases and operation bandwidth increases to different levels due to device degradation, whereas a voltage amplifier exhibited much less changes.

PAPR reduction of OTFS using an automatic amplitude reduction neural network with vendermonde matrix-based PTS and SLM algorithms

Orthogonal time frequency selectivity is considered one of the most promising advanced waveforms for high-mobility conditions in beyond-fifth-generation networks. A high peak-to-average power ratio in orthogonal time frequency introduces nonlinearity and degrades the power amplifier performance. In this work, we propose a novel automatic amplitude reduction neural network algorithm combined with partial transmission sequence and selective mapping methods using the Vendermonde matrix for generating phase sequences. In a conventional selective mapping methods or partial transmission sequence, selecting an optimal phase increases the complexity, which is overcome via Vendermonde matrix in a proposed framework. The minimization of the peak-to-average power ratio is obtained at the double-stage process: in the first stage, the threshold amplitude is set, and the amplitude exceeding the threshold is reduced by using an automatic amplitude reduction neural network and then the partial transmission scheme or selective mapping methods. The simulation results reveal that, compared with the conventional algorithms, the proposed algorithms yield a significant peak average-to-power ratio, bit error rate, and power spectrum density performance.

Smith Chart-Based Design of High-Frequency Broadband Power Amplifiers

This paper presents a comprehensive study on the design and performance of a high-power amplifier (PA) covering a broad frequency band from 0.1 to 4.8 GHz. Leveraging a 10 W GaN device, the amplifier achieves output power levels surpassing 10 W across the entire frequency band. Furthermore, the power-added efficiency (PAE) of the amplifier ranges from 47% to 59%, indicating its energy-efficient operation. With consistent gain characteristics varying between 7 and 15 dB, the design ensures reliable signal amplification for diverse applications. Notably, the approach introduces a simplified output matching network based on an LC network, prioritizing practicality without sacrificing performance. Additionally, comprehensive guidance is provided on utilizing the Smith chart for streamlined amplifier design, enabling engineers with an accessible methodology. Through a meticulous analysis, this work contributes to advancing the field of high-power amplification, offering enhanced performance and usability for next-generation wireless communication systems.

Radiation influence on planar reconfigurable field effect transistor low noise amplifier performance

Abstract Many novel devices have been proposed in the literature to mitigate the short channel effect and the reconfigurable FET (RFET) is one of them. The circuits based on new devices need to be investigated when they are introduced. This work has two parts: (i) designing cascoded RFET low noise amplifiers (LNA) and their performance analysis; and (ii) single-event performance analysis of RFET-LNAs. The designed LNA has a gain of 12 dB and a noise figure of 2.42 dB. The device in the common gate configuration mode is more susceptible to heavy ion radiation and collects more charge (QC) compared to the device in the common source configuration mode. Through temporal and frequency analysis, the irradiation disturbance is examined. In the temporal analysis, the collected charge (QC) is used as a metric, and the spectrogram is used in the frequency analysis.

Improving the Performance of Bidirectional Communication System Using Second-Order Raman Amplifiers

In order to achieve low-cost scalability, the same-wavelength bidirectional (SWB) fiber communication system is a better solution. We present a detailed investigation of the performance of the different orders Raman amplifiers in same-wavelength bidirectional fiber communication systems. We discuss how to suppress the main factor affecting system performance which is Rayleigh scattering noise (RSN). By using different Raman amplifiers to construct different quasi-lossless transmission, the performance changes in the same-wavelength bidirectional fiber optic communication system were studied. On this basis, multi-channel and same-wavelength single fiber bidirectional system experiments were conducted to compare the performance of second-order Raman systems and first-order Raman systems. The results indicate that the Rayleigh scattering suppression effect of second-order Raman systems is better, and compared to first-order Raman systems, the average signal-to-noise ratio (SNR) can be increased by 2.88 dB.

Design of highly efficient filtering power amplifier with a wideband response for sub-6 GHz 5G applications

This paper presents the design of a filtering power amplifier (PA) with extra-high power-efficiency and wide bandwidth. To accomplish this, a novel approach is adopted by utilizing a wideband bandpass filter (BPF) as the output matching network (OMN) for the PA. The BPF compromises two paths, where each path consisting of two identical coupled lines that are interconnected to form a ring structure. The suggested configuration eliminates the need for a conventional OMN by integrating the input port of the filter with the drain node of the transistor, resulting in reduced size and losses and improved amplifier performance. The filter concept is illustrated using coupling matrix synthesis. A proof-of-concept filtering PA has been designed using a commercially available 10 W GaN HEMT. This amplifier was designed to operate in the frequency range of 3.0–5.0 GHz, yielding a fractional bandwidth of 50 %. According to achieved results, the drain efficiency and output power are 43.8–70.5 % and 40.2–41.8 dBm, respectively. As a result, the suggested filtering PA demonstrates significant performance in terms of filter bandwidth response and power amplification. Additionally, the proposed filtering PA has a broad operational bandwidth of 3.0–5.0 GHz, which covers the 5G New Radio (NR) n77 (3.3–4.2 GHz), n78 (3.3–3.8 GHz), and n79 (4.4–5.0 GHz) frequency bands.

Unlocking superior performance of broadband powerful mid-IR optical parametric amplifiers with a BaGa2GeS6 crystal pumped at 1.24 µm.

We report on the development of a tunable (1.5-6.5 µm) femtosecond optical parametric amplifier (OPA) based on a novel, to the best of our knowledge, BaGa2GeS6 (BGGS) crystal with a Cr:Forsterite pumping laser. Total conversion efficiency as high as 28% is achieved in a robust two-stage setup resulting in the generation of a 340-µJ 1.67-µm signal and 100-µJ 4.65-µm idler pulses. A 5-optical-cycles 94-fs 6-µm idler pulses are demonstrated with a propriate dispersion compensation by Ge and GaAs plates. An experimental estimate is given for the effective nonlinearity of a BGGS material, which for our nonlinear process reaches 19.5 pm/V for Type II phase matching. The crystal is additionally tested as a final amplifier in a high-energy OPA, where total output reaches 1.2 mJ with more than 40% conversion efficiency. The demonstrated high nonlinearity, high damage threshold, and chemical stability of the polished surface make BGGS crystal an ideal candidate for the development of high-energy OPAs with multi-millijoule pumping lasers.

Analysis of the Impact of the Inductive Peaking Bandwidth Enhancement Technique on the Noise Performance of CMOS Optical Amplifiers

Analysis of the Impact of the Inductive Peaking Bandwidth Enhancement Technique on the Noise Performance of CMOS Optical Amplifiers

Cryogenic bipolar low noise dc amplifier for low frequency applications

A low-noise bipolar differential dc amplifier was studied at temperatures of 300 and 77 K. It was shown that to ensure the best amplifier performance in terms of noise figure when the operating temperature decreases from 300 to 77 K, it is advisable to use the transistor in the mode of low currents not exceeding 2 mA. It has been established that lowering the operating temperature to 77 K leads to a decrease in the input resistance of the amplifier from a value of several kiloohms to 100 Ohms, the dynamic range increases from 80 to 85 dB, and the harmonic coefficient increases from 0.09% to 1%. In addition, lowering the operating temperature to 77 K has a significant effect on the noise properties of the amplifier: the spectral density of voltage noise decreases from 1 to 0.4 nV/Hz1/2, the spectral density of current noise increases from 2.5 to 9 pA/Hz1/2, while also The threshold frequencies of 1/f noise increase: for voltage from (0.1...10) to 20 Hz and for current from (10...100) to 1000 Hz. The possibility of using an amplifier for low-temperature measurements of samples with low input resistance is substantiated.

Effect of off-axis electron beam on the performance of a gyroklystron amplifier

A crucial part of a gyroklystron is an electron beam. For the efficient operation of the gyroklystron, effective interaction between the radio frequency wave and the electron beam is necessary. Although the manufacturing and assembly of the gyroklystron are complicated, during the assembly process of various components of the gyroklystron, there is some possibility that the components may be misaligned from their actual positions. The operation of a gyroklystron is very sensitive if its components are misaligned. Electron beam misalignment is one type of such misalignment. This paper studies the effect of an off-axis electron beam on gyroklystron performance. Due to misalignment, the electron beam radius will vary in its position as the electron beam gyrates. First, the nonlinear single-mode analysis describing the beam–wave interaction process within the gyroklystron amplifier is discussed. As reported in the literature, an experimental, two-cavity 35 GHz fundamental harmonic gyroklystron amplifier has been used to conduct the present study. The results obtained from the analytically developed approach are benchmarked by the results of the experimental device. Subsequently, the analysis developed has been extended to investigate the impact of the misaligned electron beam on the gyroklystron performance characteristics. The study shows that efficiency, output power and gain decrease with misalignment, whereas bandwidth does not change due to such misalignments. These findings demonstrate the critical role that the misaligned electron beam plays in the operation of a gyroklystron amplifier.

Design of Digital Lock-in Amplifier based on FPGA

Abstract In order to achieve high-precision measurement of strong noise background signal, a digital lock-in amplifier based on field programmable gate array (FPGA) is designed. The core of the lock-in amplifier consists of a signal processing module, an acquisition and quantisation module and a digital demodulation module. The signal processing module completes the amplification and gain adjustment of the input signal and modulates the signal to be measured into a specific frequency band, which is digitally quantised by the analog to digital converter (ADC) after anti-aliasing filtering and transmitted to the FPGA, and the signal to be measured is extracted by phase-sensitive detection through the mutual-correlation digital demodulation method, thus realising the detection of the weak signal. The performance of the lock-in amplifier is evaluated with a signal generator as the input source, and the results show that the signal-to-noise improvement ratio is 35dB and the relative measurement error of voltage is less than 0.03% after the digital lock-in amplifier is processed, which accurately restores the direct current (DC) signals in the noisy background, and provides an effective technical way for the accurate measurement of weak signals.

Crystal field effects of Al doping on the Stark splitting and gain bandwidth of erbium doped silica fibers

In this study, erbium-doped silica fibers (EDFs) with different Al/Er ratios were prepared by high-temperature source combined with the modified chemical vapor deposition (MCVD) method. The effects of different Al/Er ratios on the gain performance of erbium-doped silica fiber amplifiers (EDFA) were investigated. The EDFA demonstrated in this paper achieves a maximum gain of 45 dB at 1560 nm when the signal power is −20 dB, while the bandwidth of 20 dB gain is up to 68 nm (1532∼1600 nm). Additionally, the effect of Al doping on the crystal field around the Er ion was analyzed and the Stark energy level distribution of the Er ions was further derived. Our approach offers a feasible solution for C + L band amplification from the perspective of Stark effect and crystal field analysis.