Amorphous Silicon Thin-film Transistor Gate Research Articles

High-reliability and low-noise amorphous-silicon gate with a novel clock-driving methodology

In this paper, for the first time, a novel amorphous-silicon thin-film transistor gate drive circuit and its successfully improved dynamic characteristics are presented. Not only was the output ripple suppressed; the rate of threshold voltage shift was also reduced by up to 20%. About 50% power-saving was also estimated. The amorphous-silicon gate driver circuit was further fabricated, and the measured results show the high practicability of the achieved design.

Optimal power consumption design of the amorphous silicon thin-film transistor gate driver circuit for 10.1-in. display panel manufacturing

In this paper, the dynamic characteristics of the novel amorphous silicon thin-film transistor gate drive circuit applied on a 10.1-in. panel are optimized by using a multi-objective optimization method. Simultaneously, considering the multiple electrical characteristics of the tested circuit, the achieved results reveal interesting properties as well as good sensitivity of the optimized design parameters. The optimal specifications not only suppress the output ripple, but also reduce the dynamic and static power consumptions.