High-reliability and low-noise amorphous-silicon gate with a novel clock-driving methodology

Abstract

In this paper, for the first time, a novel amorphous-silicon thin-film transistor gate drive circuit and its successfully improved dynamic characteristics are presented. Not only was the output ripple suppressed; the rate of threshold voltage shift was also reduced by up to 20%. About 50% power-saving was also estimated. The amorphous-silicon gate driver circuit was further fabricated, and the measured results show the high practicability of the achieved design.