Amorphous Silicon Layers Research Articles

Third harmonic generation enhancement from silicon-based multilayer guided mode resonance structures under a conical mounting condition

We experimentally demonstrate more than four-orders of magnitude enhancement in third harmonic generation from an amorphous silicon layer as thin as 10 nm deposited above silicon nitride guided mode resonance (GMR) structures under a conical mounting condition using a rectangular aperture as a pupil plane mask for the fundamental excitation. The multilayer GMR structure studied here consists of shallow etched one-dimensional silicon dioxide gratings with a silicon nitride intermediate layer and an amorphous silicon nonlinear medium. Under conical mounting, by restricting the fundamental excitation angles along the grating vector direction, while retaining the angles supported by the objective lens along the grating lines, the resonances are made angle insensitive. The forward detected THG enhancement increases from 2860 in the absence of any pupil plane mask, with a uniform fundamental excitation angular span of 2.3° to 4740 and 1.7 × 104 in the presence of rectangular apertures that selectively reduce the excitation angular span along the grating vector direction to 0.86° and 0.43°, respectively. Conical mounting using rectangular aperture pupil masks to engineer the fundamental excitation is a promising approach to enhance nonlinear optical processes from angle sensitive GMR structures.

Diode Laser‐Crystallization for the Formation of Passivating Contacts for Solar Cells

A new method of diode laser treatment of passivating contacts for solar cells application based on electron beam evaporated highly doped amorphous silicon (a‐Si) layers deposited on solar‐grade Czochralski wafers with SiOx tunneling layers is investigated. In a first step, an interface oxide is grown and a highly doped n‐type a‐Si layer is deposited on both sides by electron beam evaporation. In a next step, the laser treatment is applied. Two different scanning speeds of 15 and 20 mm s−1 are used. Electron backscattering diffraction and quasi‐steady‐state photo conductance measurements indicate that the a‐Si layer can be crystallized without breaking up the thin oxide layer. To determine the best parameters, the lifetime and the implied open‐circuit voltage for each laser power are measured. The first results show a fitted lifetime of 4.06 ms and an implied open‐circuit voltage up to 711 mV after a passivation step.

Performance Evaluation of an Improved Double Intrinsic Layer CdTe/a-Si Thin Film Photovoltaic Cell

This paper presents a 1μm×1.25μm×1μm heterojunction thin film photovoltaic cell having “p-i1-i2-n” cell structure. The designed “ITO/p-CdTe/i1-CdTe/i2-a-Si/n-a-Si/ITO” photovoltaic cell is investigated, optimized and simulated in Silvaco TCAD. Finite Element Analysis (FEA) has been carried out to cater all physical and numerical models to generate practical results. For improvement in cell efficiency, a 1.52 eV wide-bandgap p-layer of CdTe is used which specifically improves the short circuit current (JSC). JSC is directly involved in the improvement of conversion efficiency. For the active region, an intrinsic CdTe layer is combined with an intrinsic amorphous silicon (a-Si) layer. This combination of intrinsic layers in active region is responsible for maximum absorption of photons with a wide range of energies and results in additional electron hole pair generation. Selective absorption is used to maximize light trapping and strong scattering of incident light into active region. Indium Tin Oxide (ITO) is used as front layer and back contact layer with Aluminum (Al) because it offers low resistivity of ~10-4 Ωcm and a transmittance of greater than 90%. Results have been validated by implementing two reported cells with p-i-i-n and p-i-n structures. The results indicate achievement of 28.05% conversion efficiency of the proposed heterojunction cell. The achieved efficiency is better than the efficiencies of the related cells compared in this work and also higher than that of the 25.6% of conventional Heterojunction Intrinsic Thin-film (HIT) silicon solar cells.

Design and Simulation of Highly Efficient One-Sided Short PIN Diode Silicon Heterojunction Solar Cell

Performance of highly efficient one-sided short PIN diode heterojunction solar cell model is studied using AFORS-HET simulation software. Here, <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">p</i> -type crystalline silicon is used as an absorber layer, <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">n</i> -type amorphous silicon as emitter layer, and a thin intrinsic amorphous silicon (i-a-Si:H) layer is sandwiched in between, which acts as a passivation layer. The diode model concept has been introduced mainly to lower the reverse saturation current by appropriate selection of the cell parameters. Short diode reduces recombination phenomenon in the short quasi-neutral region (n-a-Si:H in this article), and one-sided junction allows the maximum amount of light absorption in the absorber layer (p-c-Si in this article). The one-sided junction nature has been confirmed by capacitance–voltage ( <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">C–V</i> ) analysis. Further thickness variation of layers and role of the carrier concentration of n-a-Si layer on various parameters, such as short-circuit current density ( <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">J</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">sc</sub> ), open-circuit voltage ( <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">oc</sub> ), and fill factor (FF) have also been studied. The structure has exhibited an open circuit voltage of 0.714 V, fill factor 0.80, and maximum efficiency of 24.2%. Further, experimental validation is also established by comparing the theoretical results with the fabricated NIP structure.

Numerical simulations on a-Si:H/SnS/ZnSe based solar cells

A new solar cell structure (a-Si:H/SnS/ZnSe/ITO) is proposed using numerical modelling which has shown an improvement in the experimentally confirmed efficiency of a hydrogenated a-Si based solar cells. The results are obtained by using SCAPS – 1D solar simulator. The thicknesses of both the absorber layers, buffer layer, and window layer are varied to model and optimise the performance of the proposed cell. The optimized structure is also simulated by varying the donor and acceptor densities of the hydrogenated amorphous silicon layer, the operating temperature, and bulk defects. The variation in Voc, Jsc, fill factor, and efficiency of the proposed cell is investigated through simulation. The I-V characteristics and quantum efficiencies of the experimental reference cell (p-i-n a-Si:H), and the optimised proposed cell are compared. The optimised cell shows a considerable increase in efficiency from 11.6 % to 26.91 % and it also shows higher quantum efficiency in larger wavelength bandwidth than the reference model.

Effect of oxygen and hydrogen flow ratio on indium tin oxide films in rear-junction silicon heterojunction solar cells

The influence of the oxygen flow ratio (fO2) and hydrogen flow ratio (fH2) on the optoelectronic properties of the indium tin oxide (ITO) films are studied together. An increase of the carrier density and mobility can be achieved by using hydrogen during the sputtering process, resulting in an improvement of the film conductivity. Compared with reducing the oxygen gas flow, putting small amount of hydrogen into the sputtering mixture gases could be a better strategy to balance the electrical and optical properties of the ITO layers. Quokka3 simulation demonstrates 0.1 %abs improvement of power conversion efficiency (η) at 2% of fH2 compared to reference based on the ITO material properties. Full-size M2 solar cells with various ITO layers were fabricated. A degradation of passivation quality for the devices with hydrogenated ITO (ITO:H) was observed after sputtering process, ascribed to the etching effect of hydrogen radicals on the amorphous silicon (a-Si:H) layer and the extraction of hydrogen from a-Si:H (i) to ITO layers. It is proved that this sputter damage can be eliminated by increasing the pressure of ITO:H above 0.5 Pa. Finally, a ∼ 0.18% gain of η was obtained at fH2 of 2% and pressure of 0.8 Pa and the best cell shows the η of 22.97%, Voc of 735 mV, FF of 82.15% and Jsc of 38.03 mA/cm2.

Amorphous Silicon Thin Film Deposition for Poly-Si/SiO2 Contact Cells to Minimize Parasitic Absorption in the Near-Infrared Region

Tunnel oxide passivated contact (TOPCon) solar cells are key emerging devices in the commercial silicon-solar-cell sector. It is essential to have a suitable bottom cell in perovskite/silicon tandem solar cells for commercial use, given that good candidates boost efficiency through increased voltage. This is due to low recombination loss through the use of polysilicon and tunneling oxides. Here, a thin amorphous silicon layer is proposed to reduce parasitic absorption in the near-infrared region (NIR) in TOPCon solar cells, when used as the bottom cell of a tandem solar-cell system. Lifetime measurements and optical microscopy (OM) revealed that modifying both the timing and temperature of the annealing step to crystalize amorphous silicon to polysilicon can improve solar cell performance. For tandem cell applications, absorption in the NIR was compared using a semitransparent perovskite cell as a filter. Taken together, we confirmed the positive results of thin poly-Si, and expect that this will improve the application of perovskite/silicon tandem solar cells.

Resonant mode engineering in silicon compatible multilayer guided-mode resonance structures under Gaussian beam excitation condition

In this work we present detailed electromagnetic design, fabrication, and experimental study of silicon-compatible, step-index, multilayer guided-mode resonance structures. The proposed multilayer stack consists of an amorphous silicon overlayer deposited above a silicon nitride layer on top of one-dimensional sub-wavelength silicon dioxide grating structures. The silicon nitride layer combined with the underlying silicon dioxide gratings define the high-quality factor resonances in the 1500–1600 nm wavelength range. The addition of the amorphous silicon overlayer with varying thickness further red-shifts the resonance combined with the ability to engineer the resonant field profile and its evanescent field fraction. Realistic Gaussian beam excitation with increasing angular spread exciting finite extent gratings results in reduced contrast and quality factor of the designed resonances are found to decrease. We experimentally study the linear transmission spectra for the fabricated structures with amorphous silicon overlayer thickness of 10, 50 and 100 nm. The measured optical resonances are at 1580, 1813 and 2104 nm respectively, showing good agreement with Gaussian-beam excitation studies. As an application of the proposed structures, we demonstrate third-harmonic generation (THG) enhancement from the 10 nm amorphous silicon overlayer showing 19 and 178-times enhancement in THG for fundamental excitation with 11° and 4° angular spread respectively. The present work utilizes the thinnest amorphous silicon layer to achieve optical resonances in the near-infrared wavelength and consequently ensures minimum absorption of the generated THG signal when used for nonlinear optical enhancement studies.

Phosphorus-doped polysilicon passivating contacts deposited by atmospheric pressure chemical vapor deposition

In this work, we present a high quality tunnel oxide passivating, electron-selective contact that is formed using an in-situ phosphorus-doped polycrystalline silicon (poly-Si) layer deposited using an in-line atmospheric pressure chemical vapor deposition (APCVD) process. In-line APCVD is a single-sided deposition process that does not require vacuum systems and is well suited for high volume manufacturing. To fabricate this tunnel oxide passivating contact (TOPCon), we deposit an amorphous silicon (a-Si) layer on silicon oxide (SiO) passivated n-type crystalline silicon (c-Si) followed by an annealing step at around 910 ∘C, which provides solid phase crystallization. The contact shows an excellent surface passivation quality with an effective minority carrier lifetime of ≈4.2 ms and an implied open circuit voltage (iV ) of ≈717 mV after annealing without any additional hydrogenation process. Saturation current density (J ) of ≈18 fA cm−2 is recorded for this contact. Contact resistivity () of ≈50 mΩ·cm−2 and junction resistivity of ≈0.24 Ω·cm−2 are realized with e-beam evaporated aluminium (Al) metal contact.

Comparative study on crystallinity of laser-annealed polysilicon thin films for various laser sources

In this study, we compared the crystallinities of polycrystalline silicon thin films annealed using green laser annealing (GLA) with a 532-nm pulsed laser, near-ultraviolet laser annealing (NULA) with a 355-nm pulsed laser, and blue laser diode annealing (BLDA) with 450-nm continuous-wave (CW) lasers. Three-dimensional heat transfer simulations were performed to obtain the temperature distributions in a 100 nm-thick amorphous silicon layer, and optimum laser conditions were determined for each laser annealing. GLA, NULA, and BLDA experiments were conducted based on the thermal simulation results, and the crystallinity of the annealed samples was quantitatively analyzed via spectroscopic ellipsometry. The analysis results indicated that GLA and BLDA resulted in good crystallinity that was comparable to the result of furnace annealing, whereas NULA resulted in a relatively poor crystal quality. The difference in the crystallinities produced by the annealing lasers could be explained using the thermal simulation results. This study provides an insight into the optimum laser annealing conditions for realizing high-quality poly-silicon thin films.

High-performance anode of lithium ion batteries with plasma-prepared silicon nanoparticles and a three-component binder

The crystalline silicon nanoparticles coated with an amorphous silicon layer was prepared by continuously pyrolysing the mixture of silane and hydrogen in a non-thermal arc plasma reactor. The hydrogen in the gas mixture effectively controls the thickness of the amorphous silicon layer and further improves the electrochemical performance of the silicon anode. The mechanism of the hydrogen was investigated by experiments. At the same time, a three-component polymer binder was concocted and introduced to tolerate the volume expansion of silicon effectively. Combining the silicon nanoparticles prepared at the optimal conditions with the novel polymer binder, the resulting silicon anode exhibits excellent electrochemical performance of 2120 mAh g−1 at 400 mA g−1 after 100 cycles.

Colored, Covert Infrared Display through Hybrid Planar‐Plasmonic Cavities

AbstractArtificial covert infrared (IR) displays have recently emerged as an anti‐counterfeiting method for spontaneous thermal emissive surfaces and optically encoded information. However, the unnatural appearance of a conventional thermal emissive label in the visible region limits the widespread application of an artificial covert IR display. This paper presents a colored, covert IR display exhibiting visible color patterns and thermally encoded data simultaneously based on a hybrid planar‐plasmonic cavity (HPPC). The HPPC is composed of two spectrally distinguished resonant structures: 1) an ultrathin planar cavity with an amorphous silicon (a‐Si) layer on gold (Au) for visible coloration and 2) an IR plasmonic cavity with hole‐patterned Au on a polymer substrate with a back mirror for thermal data encoding. Such hybridization of multi‐band resonance can not only enhance the vivid coloration but also enhance the data storage capacity per unit. Camouflage labels with encrypted thermal data are successfully demonstrated for practical applications using a flexible HPPC. Collectively, the proposed HPPC enables a new type of anti‐counterfeiting method that achieves both esthetic, visibly encoded data, and covert, thermally encoded data.

Influence of the Dopant Gas Precursor in P-Type Nanocrystalline Silicon Layers on the Performance of Front Junction Heterojunction Solar Cells

Silicon heterojunction solar cells can employ p-type hydrogenated nanocrystalline silicon nc-Si:H(p) on their front side, since these can provide better transparency and contact resistance compared to hydrogenated p-type amorphous silicon layers. We investigate here the influence of trimethyl boron (TMB) and BF3 as dopant source on the layer properties and its performance in solar cells. Both gases enable high efficiencies but yield a different crystallinity and effective doping. A high BF3 flow lowers the series resistance through a low activation energy of dark lateral conductivity and maintains a high crystallinity. This allows fill factors up to 83%, however with the apparition of a parasitic absorption in the UV. A low TMB flow enables simultaneously a high crystallinity and a low activation energy. As an illustration of this layer potential, a 23.9%-certified efficiency is achieved with a 2 × 2 cm2 screen-printed device. We finally suggest that similar transport versus transparency trade-offs can be reached for both dopant types for front junction application, while high BF3 flow allowing lower series resistance might be of interest when placed on the rear side.

Polarizable High‐Index Nanoparticles Used for Light‐Induced Crystal‐Silicon Passivation and Dielectric Antenna for High‐Efficiency Solar Cell

Heterojunction crystal‐silicon (c‐Si) solar cells generate current from harvesting light via sweeping excited carriers away under built‐in asymmetry through amorphous silicon layers. However, loss of energy beyond the bandgap is known to hinder their efficiency. Herein, a strategy is provided to convert short‐wavelength energy into a polarization electrical field and the light dielectric antenna effect, where enhanced surface passivation and carrier collection occur simultaneously. By depositing an ultrathin polarizable nanoparticle layer on a transparent conducting oxide (TCO), a light‐induced electrical field is built up by light‐harvesting accumulation, which benefits for c‐Si surface passivation. An enchanting open‐circuit voltage (Voc) of 736.6 mV for the light‐induced field‐effect solar cell is achieved. In addition, the high‐index dielectric nanoparticles generate more photons to be absorbed in the long‐wavelength in c‐Si solar cells, which results in enhanced short‐circuit current (Jsc). As a result, benefiting from the light‐induced building‐up extra field and dielectric antenna effect, the device yields a power conversion efficiency of 22.41%, with the maximal improvement of Voc (≈4 mV), Jsc (≈0.4 mA cm−2), and fill factor (≈1%), respectively. This work provides a strategy to enhance solar cell efficiency by continuously harvesting beyond‐bandgap light to offer an additional asymmetrical field and the light antenna effect.

The Influence of Wire Speed on Phase Transitions and Residual Stress in Single Crystal Silicon Wafers Sawn by Resin Bonded Diamond Wire Saw.

Lower warp is required for the single crystal silicon wafers sawn by a fixed diamond wire saw with the thinness of a silicon wafer. The residual stress in the surface layer of the silicon wafer is the primary reason for warp, which is generated by the phase transitions, elastic-plastic deformation, and non-uniform distribution of thermal energy during wire sawing. In this paper, an experiment of multi-wire sawing single crystal silicon is carried out, and the Raman spectra technique is used to detect the phase transitions and residual stress in the surface layer of the silicon wafers. Three different wire speeds are used to study the effect of wire speed on phase transition and residual stress of the silicon wafers. The experimental results indicate that amorphous silicon is generated during resin bonded diamond wire sawing, of which the Raman peaks are at 178.9 cm−1 and 468.5 cm−1. The ratio of the amorphous silicon surface area and the surface area of a single crystal silicon, and the depth of amorphous silicon layer increases with the increasing of wire speed. This indicates that more amorphous silicon is generated. There is both compressive stress and tensile stress on the surface layer of the silicon wafer. The residual tensile stress is between 0 and 200 MPa, and the compressive stress is between 0 and 300 MPa for the experimental results of this paper. Moreover, the residual stress increases with the increase of wire speed, indicating more amorphous silicon generated as well.

Investigation of Thermal Stability Effects of Thick Hydrogenated Amorphous Silicon Precursor Layers for Liquid‐Phase Crystallized Silicon

The thermal stability of thick (≈4 μm) plasma‐grown hydrogenated amorphous silicon (a‐Si:H) layers on glass upon application of a rather rapid annealing step is investigated. Such films are of interest as precursor layers for laser liquid‐phase crystallized silicon solar cells. However, at least half‐day annealing at T ≈550 °C is considered to be necessary so far to reduce the hydrogen (H) content and thus avoid blistering and peeling during the crystallization process due to H. By varying the deposition conditions of a‐Si:H, layers of rather different thermal stability are fabricated. Changes in the surface morphology of these a‐Si:H layers are investigated using scanning electron microscopy and profilometry measurements. Hydrogen effusion, secondary‐ion mass spectrometry (SIMS) depth profiling, and Raman spectroscopy measurements are also carried out. In summary, amorphous silicon precursor layers are fabricated that can be heated within 30 min to a temperature of 550 °C without peeling and major surface morphological changes. Successful laser liquid‐phase crystallization of such material is demonstrated. The physical nature of a‐Si:H material stability/instability upon application of rapid heating is studied.

Numerical Analysis of Selective ITO/a-Si:H Contacts in Heterojunction Silicon Solar Cells: Effect of Defect States in Doped a-Si:H Layers on Performance Parameters

The effects of defect states in doped thin-film amorphous-silicon layers (p-a-Si:H and n-a-Si:H) and at heterointerfaces of the passivated crystalline-silicon (c-Si) wafer on the performance of heterojunction silicon solar cells are investigated using optoelectrical simulations. We used a state-of-the-art numerical model of a silicon heterojunction solar cell, including indium-tin-oxide (ITO) contacts as semiconductor layers, applying the accompanying tunneling mechanisms. We show that increasing the dangling-bond density in the p-a-Si:H reduces the conversion efficiency of the device more than in the n-a-Si:H, independent of the doping type of the c-Si wafer and illumination side of the device. Simulations revealed that this is due to: a larger ITO work-function mismatch with the p-a-Si:H than the n-a-Si:H; a larger valence-band offset at i-a-Si:H/n-c-Si interface at the p-side compared to the conduction-band offset at the n-side i-a-Si:H/n-c-Si; and asymmetric distribution of defects in the doped a-Si:H layers. The effects of individual defect-state parameters in doped a-Si:H layers and c-Si heterointerfaces are shown. We demonstrate that the decrease in conversion efficiency due to increased dangling-bond states in doped layers is primarily a consequence of a reduced fill-factor and open-circuit voltage. We explain the phenomenon by charge-redistribution linked to increased dangling-bond density in p-a-Si:H, whereas the increased free-charge recombination has only little effect on the short-circuit-current density over a wide range of defect-state variation. Besides quantitative results of defect-state variation on solar cell performance, this article aims to offer a thorough understanding of the physical processes in the device, governing these effects.

Potential high efficiency of GaAs solar cell with heterojunction carrier selective contact layers

Advanced configurations of gallium arsenide (GaAs) solar cells are proposed, using hydrogenated amorphous silicon (a-Si: H) and zinc oxide (ZnO) layers as passivation and carrier selective contacts (CSC), as alternatives to the conventional epitaxial GaInP CSC layers. The cell operation is simulated based on the AFORS-HET simulation program. The results show that with a wide-gap ZnO window layer, single-junction GaAs solar cells can reach a higher short-circuit current density (Jsc) and open-circuit voltage (Voc) than that obtained with conventional GaInP CSC layers without affecting the fill factor (FF). Notably, wide-gap and n-type doping ZnO layers show great potential as electron selective contacts in GaAs solar cells with high barriers at the valence band for blocking hole-transport. An efficiency of 30% is reached for a single-junction GaAs cell with a front ZnO electron selective contact. A 4-terminal GaAs/c-Si tandem solar cell configuration with an estimated conversion performance of 35.16% is proposed. These results indicate enormous potential for the development of low-cost and high-efficiency GaAs-based solar cells in the future.

Structural mechanism of plastic deformation of Al/а-Si multilayer foils at heating under load

Abstract Al/Si multilayer foils were produced by layer-by-layer vacuum deposition of component vapour phases on the substrate at 150°С temperature. It is shown that the structure of as-deposited foils is characterized by alternation of layers of aluminium and amorphous silicon. At foil heating under load in the temperature range of 180 … 230°С, an increase of plastic deformation rate is observed. Investigations of the change of foil structure showed that increased plasticity can be due to aluminium-induced silicon crystallization. The process of silicon crystallization is accompanied by fragmentation of its layers and formation of a composite structure, consisting of aluminium matrix, crystalline silicon particles and pores. When temperature of the order of 450–500°С is reached, the rate of foil plastic deformation rises abruptly. Analysis of structural changes in the foil leads to the assumption that intensive plastic deformation of the foil is realized by the mechanism of intergranular slipping of aluminium grains, accommodation of their displacement being facilitated by presence of pores.

An integrated actuating and sensing system for light-addressable potentiometric sensor (LAPS) and light-actuated AC electroosmosis (LACE) operation.

To develop a lab on a chip (LOC) integrated with both sensor and actuator functions, a novel two-in-one system based on optical-driven manipulation and sensing in a microfluidics setup based on a hydrogenated amorphous silicon (a-Si:H) layer on an indium tin oxide/glass is first realized. A high-intensity discharge xenon lamp functioned as the light source, a chopper functioned as the modulated illumination for a certain frequency, and a self-designed optical path projected on the digital micromirror device controlled by the digital light processing module was established as the illumination input signal with the ability of dynamic movement of projected patterns. For light-addressable potentiometric sensor (LAPS) operation, alternating current (AC)-modulated illumination with a frequency of 800 Hz can be generated by the rotation speed of the chopper for photocurrent vs bias voltage characterization. The pH sensitivity, drift coefficient, and hysteresis width of the Si3N4 LAPS are 52.8 mV/pH, -3.2 mV/h, and 10.5 mV, respectively, which are comparable to the results from the conventional setup. With an identical two-in-one system, direct current illumination without chopper rotation and an AC bias voltage can be provided to an a-Si:H chip with a manipulation speed of 20 μm/s for magnetic beads with a diameter of 1 μm. The collection of magnetic beads by this light-actuated AC electroosmosis (LACE) operation at a frequency of 10 kHz can be easily realized. A fully customized design of an illumination path with less decay can be suggested to obtain a high efficiency of manipulation and a high signal-to-noise ratio of sensing. With this proposed setup, a potential LOC system based on LACE and LAPS is verified with the integration of a sensor and an actuator in a microfluidics setup for future point-of-care testing applications.