The authors have measured the room-temperature Hall resistivity of electro-deposited amorphous Ni1-xPx samples for 0.15<or=x<or=0.26. The apparent Hall coefficient is observed to change sign as a function of P concentration at x approximately=0.23. The anomalous Hall coefficient was determined from the ferromagnetic saturation in the x=0.15 sample. Using recent values from the literature for the susceptibility of electro-deposited Ni-P, it it concluded that the anomalous Hall coefficient makes an insignificant contribution to the apparent Hall coefficient. The experimental results are discussed on the bases of an electronic structure calculation of Ni0.74P0.26 and it is suggested that the change in sign of the classical Hall coefficient of Ni1-xPx may be attributed to a decrease in the s-p density of states at the Fermi energy causing the d holes to begin to dominate the conductivity.