The temperature dependence of the sheet resistance of e-beam evaporated W/Si multilayers was investigated. A positive temperature coefficient of resistivity (TCR) 190–600 ppm/K was obtained for multilayers with crystalline tungsten layers ( d w > 4 nm). Multilayers with amorphous tungsten layers 1–4 nm thick revealed nom-metallic resistivity behaviour with a negative TCR, -(100–300) ppm/K in the temperature range 1.8–300 K, and were superconducting with the superconducting transition temperature T c up to 4.21 K. The resistivity behaviour of the amorphous W/Si multilayers with Si layer thicknesses 1–10 nm can be described within the framework of 3D weak localization and interaction models. At temperatures close to T c superconducting fluctuations decrease the resistance of these samples. At temperatures above T c both effects can be comparable, resulting in a maximum in the temperature dependence of the resistance. A relatively strong coupling between metallic layers was observed. This coupling could originate from mixing at the W/Si interfaces and interdiffusion during the deposition and subsequent annealing. The different resistivity behaviour of amorphous tungsten monolayers strongly supports this assumption.