Image retention can limit the upper operational frequency of ZnS-based alternating-current thin-®lm electro-luminescent (ACTFEL) devices. We studied the impact of indium-tin-oxide (ITO) electrodes pro®le, ZnS deposition conditions, the moisture content of the source material, and the drive conditions on image retention. Layer-by-layer etching and scanning electron microscopy (SEM) crosssectioning techniques were used for the investigation of this phenomenon. The failure was found to start at the column electrode edges of the pixel. Some peculiarities of the image-retention phenomenon are discussed, on the basis of an equivalent electrical scheme of the device and via crystalline properties of the active layer. The conditions for producing displays with a reduced occurrence of image retention are also discussed. ZnS:Mn-based alternating-current thin-®lm electroluminescent devices (ACTFEL) are being widely applied as high-contrast, lightweight, and rugged displays. Additional signi®cant advantages of these devices are their wide viewing angle, suf®ciently low power consumption, the capability to operate in wide temperature ranges, long life, and potentially high legibility in almost all ambient light conditions [1]. Many reports exist in the literature on the growth techniques of ACTFEL devices and the different ways to improve the ef®ciency of the structure [2, 3]. Much less attention has been paid to the appearance of destructive defects and aging phenomena, such as image retention or differential aging, which limit the operating potential of the device and ultimately hold back the exploitation of the displays. The available information is limited mostly by studies on domain electro-luminescence [4], localized destructive breakdown phenomenon [5], and the effect of moisture presence on some characteristics of the devices [6]. The appearance of the differential aging is usually explained by improper driving methods [7]. In this letter, we concentrate on the failure analysis of ZnS:Mn based ACTFEL devices, and present some important results that expand the understanding of image retention in ACTFEL devices. The typical ACTFEL structure, consisting of the glass substrate, indium-tin-oxide patterned layer, 6000 AE ZnS:Mn active layer sandwiched between two dielectrics, back aluminum electrode and packaging oxide layer, was used for this study. The dielectrics are typically yttrium oxide (Y2O3), aluminum oxide (Al2O3), and silicon oxi-nitride (SiON). The in uence of growth conditions, such as growth rate and substrate temperature Tsub, as well as the ITO shoulders pro®le and ZnS moisture content, were analyzed to clarify the origin of image retention. Before environmental and electrical testing, each structure was stabilized by a burn-in procedure. The optical and SEM studies of cross-sectioned and layer-by-layer etched samples were used as basic failure and structural analysis techniques in this series of experiments. The layer-by-layer etching technique was used to clarify the position of the damage region in the stack. All reactants were properly prepared to attack only each individual layer, without touching the adjacent one. The image retention can be described as undesirable and unrecoverable changes in driven areas of the device, leading to the appearance of the remaining image in non-energized displays (Fig. 1). It was found that the image retention can be brought on by aggressive drive conditions, such as high voltage (V . 180 V for device with threshold voltage 130 V), square wave-form pulse, and=or high frequency (.1 kHz). The ®rst two drive parameters result in the current overshooting at the onset of the pulse. The high frequency of the addressing signal leads to additional stress on the insulator= semiconductor interfaces (ISI), as well as extra heat energy release. Fig. 2a shows the typical ACTFEL ITO electrode pro®le. We suggest that in the case of a steep pro®le, electrode edges are too sharp to provide a uniform thickness distribution of the phosphor layer. As a result, the ZnS layer becomes thinner along the column edges. This results in a higher electric ®eld