Aluminum Oxide Tunnel Barriers Research Articles

Enhanced coherence of all-nitride superconducting qubits epitaxially grown on silicon substrate

Improving the coherence of superconducting qubits is a fundamental step towards the realization of fault-tolerant quantum computation. However, coherence times of quantum circuits made from conventional aluminum-based Josephson junctions are limited by the presence of microscopic two-level systems in the amorphous aluminum oxide tunnel barriers. Here, we have developed superconducting qubits based on NbN/AlN/NbN epitaxial Josephson junctions on silicon substrates which promise to overcome the drawbacks of qubits based on Al/AlOx/Al junctions. The all-nitride qubits have great advantages such as chemical stability against oxidation, resulting in fewer two-level fluctuators, feasibility for epitaxial tunnel barriers that reduce energy relaxation and dephasing, and a larger superconducting gap of ~5.2 meV for NbN, compared to ~0.3 meV for aluminum, which suppresses the excitation of quasiparticles. By replacing conventional MgO by a silicon substrate with a TiN buffer layer for epitaxial growth of nitride junctions, we demonstrate a qubit energy relaxation time {T}_{1}=16.3;{{upmu }}{{{{{rm{s}}}}}} and a spin-echo dephasing time {T}_{2}=21.5;{{upmu }}{{{{{rm{s}}}}}}. These significant improvements in quantum coherence are explained by the reduced dielectric loss compared to the previously reported {T}_{1}approx {T}_{2}approx 0.5;{{upmu }}{{{{{rm{s}}}}}} of NbN-based qubits on MgO substrates. These results are an important step towards constructing a new platform for superconducting quantum hardware.

Toward the Absolute Spin-Valve Effect in Superconducting Tunnel Junctions.

A superconductor with a spin-split excitation spectrum behaves as an ideal ferromagnetic spin-injector in a tunneling junction. It was theoretically predicted that the combination of two such spin-split superconductors with independently tunable magnetizations may be used as an ideal absolute spin-valve. Here, we report on the first switchable superconducting spin-valve based on two EuS/Al bilayers coupled through an aluminum oxide tunnel barrier. The spin-valve shows a relative resistance change between the parallel and antiparallel configuration of the EuS layers up to 900% that demonstrates a highly spin-polarized current through the junction. Our device may be pivotal for realization of thermoelectric radiation detectors, a logical element for a memory cell in cryogenics, superconductor-based computers, and superconducting spintronics in general.

Local long-distance spin transport in single layer graphene spin filter

Spin transport through single layer graphene grown by chemical vapor deposition has been measured in the local measurement configuration using aluminum oxide tunnel barriers and Co electrodes. Unlike the case of non-local measurements we report positive magnetoresistance for graphene channels as long as 10 microns at room temperature. Our analysis shows that the spin diffusion length in graphene is 14 ±4 microns at room temperature, bringing us a step closer to spintronic applications based on graphene spin filters.

Reduced resistance drift in tunnel junctions using confined tunnel barriers.

Metal-insulator-metal (MIM) tunnel junctions with the aluminum oxide tunnel barriers confined between cobalt electrodes exhibit less resistance drift over time than junctions that utilize a thick, unconfined aluminum electrode. The improved long time stability is attributed to better initial oxide quality achieved through confinement (use of a potential energy well for the oxygen) and plasma oxidation. In this work, Co/AlOx/Co and Co/Al/AlOx/Co tunnel junction aging is compared over a period of approximately 9 months using transport measurements and Wentzel-Kramers-Brillouin (WKB) based modelling. The Co/AlOx/Co (confined) tunnel junction resistance increased by (32 ± 6) % over 5400 h, while Co/Al/AlOx/Co (unconfined) tunnel junction resistance increased by (85 ± 23) % over 5200 h. Fit parameters for the tunnel barrier width and potential energy barriers were extracted using WKB transport modelling. These values change only a small amount in the confined Co/AlOx/Co tunnel junction but show a significant drift in the unconfined Co/AlOx/Co tunnel junction.

Characterization of aluminum oxide tunnel barriers by combining transport measurements and transmission electron microscopy imaging

We present two approaches for studying the uniformity of a tunnel barrier. The first approach is based on measuring single-electron and two-electron tunneling in a hybrid single-electron transistor. Our measurements indicate that the effective area of a conduction channel is about one order of magnitude larger than predicted by theoretical calculations. With the second method, transmission electron microscopy, we demonstrate that variations in the barrier thickness are a plausible explanation for the larger effective area and an enhancement of higher order tunneling processes.

Different shape normal metal interlayers between niobium based SIS junctions and niobium titanium nitride leads and their influence on the electron temperature

In this paper we demonstrate the reduction of heating in a niobium superconductor-insulator-superconductor (SIS) junction with aluminum-oxide tunnel barrier embedded in a niobium-titanium-nitride circuit. Nonequilibrium quasiparticles which are created due to the Andreev trap at the interface between the niobium and the niobium-titanium-nitride layers are relaxed by inserting a normal-metal conductor of gold between these two layers. In an earlier work we explained the observed relaxation of nonequilibrium quasiparticles due to the geometrically assisted cooling effect. In this paper we investigate this cooling effect in dependence of the normal-metal layer shape and size. We expect that an adapted normal-metal layer is necessary for implementation in practical terahertz SIS heterodyne mixer circuits. We observe in DC-measurements of a large number of devices a clear relation between the volume of the gold layer and the effective electron temperature in the device. Our central finding is that the shape of the gold layer does not influence the cooling provided that the volume is sufficient.

Improved Nb SIS devices for heterodyne mixers between 700 GHz and 1.3 THz with NbTiN transmission lines using a normal metal energy relaxation layer

In this paper, we demonstrate experimentally the implementation of a niobium-trilayer junction with an aluminum-oxide tunnel barrier, embedded in a high-gap superconducting niobium-titanium-nitride circuit. Previously reported heating by quasiparticle trapping is removed by inserting a normal metal layer of gold between the niobium junction and the niobium-titanium-nitride layer. We analyze in dc-characterization measurements the cooling of the nonequilibrium quasiparticles in various device geometries having different gold layer thickness and shape. Our work is concluded with remarks for future heterodyne mixer experiments using our device technology.

Universality of transport properties of ultrathin oxide films

We report low-temperature measurements of current–voltage characteristics for highly conductive Nb/Al–AlOx–Nb junctions with thicknesses of the Al interlayer ranging from 40 to 150 nm and ultrathin barriers formed by diffusive oxidation of the Al surface. In a superconducting state these devices have revealed a strong subgap current leakage. Analyzing Cooper-pair and quasiparticle currents across the devices, we conclude that the strong suppression of the subgap resistance compared with conventional tunnel junctions is not related to technologically derived pinholes in the barrier but rather has more fundamental grounds. We argue that it originates from a universal bimodal distribution of transparencies across the aluminum oxide barrier proposed earlier by Schep and Bauer (1997 Phys. Rev. Lett. 78 3015). We suggest a simple physical explanation of its source in the nanometer-thick oxide films relating it to strong local barrier-height fluctuations in the nearest to conducting electrode layers of the insulator which are generated by oxygen vacancies in thin aluminum oxide tunnel barriers formed by thermal oxidation.

Laterally proximized aluminum tunnel junctions

This letter presents experiments on junctions fabricated by a technique that enables the use of high-quality aluminum oxide tunnel barriers with normal metal electrodes at low temperatures. Inverse proximity effect is applied to diminish the superconductivity of an aluminum dot through a clean lateral connection to a normal metal electrode. To demonstrate the effectiveness of this method, fully normal-state single electron transistors (SETs) and normal metal-insulator-superconductor (NIS) junctions applying proximized Al junctions were fabricated. The transport characteristics of the junctions were similar to those obtained from standard theoretical models of regular SETs and NIS junctions.

Highly charged ion interactions with thin insulating films

The electrical conductance of magnetic tunnel junction (MTJ) devices whose ultra-thin aluminum oxide tunnel barriers were irradiated by highly charged ions (HCIs) increases linearly with the fluence of HCIs, while retaining a current–voltage relationship indicative of a tunnel junction. The slope of the MTJ conductance σ c as a function of fluence varies with different tunnel barrier thicknesses d, levels of oxidation (stoichiometry) and charge state q. Since the MTJ conductance after HCI irradiation is due to tunneling, the increased conductance can result from thinning the barrier, reducing the effective tunnel barrier height φ, or both. Measurements of the current–voltage profile provide sufficient degrees of freedom to substantially constrain d and φ provided the reduction of the barrier remains within the assumptions of the commonly used WKB (Wentzel–Kramers–Brillouin) tunneling formalism. For the Xe 32+ ions discussed here the perturbation of the tunnel barrier is much weaker than in our previously reported measurements of Xe 44+ and application of WKB is still reasonable. This analysis reveals a trend of decreasing d while φ changes little.

Enhanced spin injection and detection in spin valves with integrated tunnel barriers

We study the spin-dependent transport in lateral spin-valve devices with aluminum oxide tunnel barriers at the interfaces between NiFe electrodes and an interconnecting Al strip. Different total conductivities per cross-sectional area are achieved by varying the oxygen pressure, the oxidation time, and the thickness of the oxidized aluminum layer. The experimental data are consistent with our theoretical description including spin diffusion, spin relaxation, and tunnel barriers at the interfaces between electrodes and aluminum strip. With decreasing tunnel conductance the amplitude of the nonlocal spin-valve effect increases by two orders of magnitude up to saturation.

Aluminum-oxide tunnel barriers with high field endurance

We have measured transport properties of all-metallic tunnel junctions, fabricated using rf-plasma-grown aluminum oxide layers and rapid thermal postannealing, in particular, their endurance in electric fields in excess of 10 MV/cm. The results indicate that such junctions may combine high-field endurance (corresponding to at least 1010 write/erase cycles in floating-gate memories) and high current density (corresponding to 30 ns scale write/erase time) at high voltages, with very low conductance (corresponding to ∼0.1 s scale retention time) at low voltages. We discuss the improvements necessary for the use of such junctions in advanced floating-gate memories.

Giant Tunneling Magnetoresistance in MgO-Based Magnetic Tunnel Junctions

A magnetic tunnel junction (MTJ), which consists of a thin insulating layer (a tunnel barrier) sandwiched between two ferromagnetic electrode layers, exhibits tunneling magnetoresistance (TMR) due to spin-dependent electron tunneling. Since the discovery of room-temperature (RT) TMR effect in 1995, MTJs with an amorphous aluminum oxide (Al–O) tunnel barrier have been studied extensively. The Al–O-based MTJs exhibit magnetoresistance (MR) ratios up to about 70% at RT and are currently used in the read heads of hard disk drives and magnetoresistive random access memory (MRAM). MTJs with MR ratios significantly higher than 70% at RT, however, are needed for next-generation spintronic devices. In 2001, first-principle theories predicted that the MR ratios of epitaxial Fe/MgO/Fe MTJs with a crystalline MgO(001) barrier would be over 1000% because of the coherent tunneling of fully spin-polarized Δ 1 electrons. In 2004, MR ratios of about 200% were obtained at RT in MTJs with a single-crystal MgO(001) barrier or a textured MgO(001) barrier. CoFeB/MgO/CoFeB MTJs for practical applications were also developed and found to have MR ratios up to 500% at RT. MgO-based MTJs are of great importance not only for device applications but also for clarifying the physics of spin-dependent tunneling.

Energy level alignment at Co/AlOx/pentacene interfaces

X-ray and ultraviolet photoemission spectroscopy (XPS and UPS) experiments were performed in order to study the energy level alignment and electronic structure at Co/AlOx/pentacene interfaces as a function of the aluminum oxide (AlOx) tunnel barrier thickness and the oxidation state of Co. XPS was used to determine the oxygen exposure for the optimum oxidation of 6, 8, and 10 Å thin layers of Al deposited on Co. The Fermi level (FL) position in the band gap of AlOx depends on the oxidation state of the underlying Co and on the thickness of the tunnel barrier. The energy level alignment at Co/AlOx interfaces is consistent with an interfacial dipole, its magnitude being sensitive to the oxidation of Co, and band bending phenomena in the thin AlOx tunnel barrier. UPS experiments revealed no chemical interaction at Co/AlOx/pentacene interface in contrast with hybridization effects found at Co/pentacene interface. The vacuum level of pentacene aligns with that of AlOx, following the position of AlOx energy levels with respect to FL. The hole injection barrier was found to increase with the thickness of the tunnel barrier and to decrease with the oxidation of Co at a fixed thickness of the AlOx layer.

Thickness determination of ultrathin oxide films and its application in magnetic tunnel junctions

In this study we propose a method for utilizing x-ray photoelectron spectroscopy (XPS), a surface sensitive technique, coupled with a wedge-shaped sample to determine the thickness of an ultrathin aluminum oxide tunnel barrier layer (∼2 nm) in a magnetic tunnel junction (MTJ). The uncertainty of the measured thickness is analyzed and the factors affecting the accuracy of this measurement are discussed as well as the advantages over the use of high-resolution transmission electron microscopy. Using this approach, we were able to quickly optimize the thickness of an aluminum oxide layer in a fabricated MTJ, yielding a high magnetoresistance ratio. In addition to XPS, one can also use Auger electron spectroscopy to determine the thickness of the oxidized tunnel barrier layer. This method can also be applied to other tunnel barrier materials such as the nitrides.

The formation mechanism of aluminum oxide tunnel barriers: Three-dimensional atom probe analysis

Magnetic tunnel junctions have applications in a range of spin-electronic devices. The functional properties of such devices are critically dependant on the nanoscale morphology of the insulating barrier (usually only a few atomic layers thick) that separates two ferromagnetic layers. Here we report atomic-resolution three-dimensional visualization of magnetic tunnel junctions with an aluminum oxide barrier, using three-dimensional atom probe analysis and cross-sectional high resolution electron microscopy. Our results on barriers with a range of degrees of oxidation have enabled a mechanism for the oxidation to be proposed. Low oxidation times result in discrete oxide islands and further oxidation leads to a more continuous, but nonstoichiometric, barrier. Post-deposition annealing leads to an increase in the barrier area and near stoichiometric chemistry with evidence that oxidation proceeds along the top of grain boundaries in the underlying CoFe. Our three-dimensional visualization enables us to show that even perforated barriers (formed at shorter oxidation times) can have reasonable transport properties.

Spin-dependent tunneling spectroscopy in single-crystal Fe∕MgO∕Fe tunnel junctions

We report a detailed spin-dependent tunneling spectroscopy in single-crystal Fe(001)∕MgO(001)∕Fe(001) magnetic tunnel junctions (MTJs) that show a giant tunnel magnetoresistance effect. Spectra for antiparallel magnetic configurations show asymmetry because of extrinsic electron scatterings caused by structural defects at the barrier/electrode interfaces. Surprisingly, spectra for parallel magnetic configurations exhibit a complex oscillatory structure that has never been observed in conventional MTJs with an aluminum-oxide tunnel barrier. The complex spectra reflect the tunneling process via interface resonant states. These results provide some information that helps to elucidate the physics of spin-dependent electron tunneling and to further enhance magnetoresistance.

Tunneling spectroscopy studies of treated aluminum oxide tunnel barrier layers

We report scanning tunneling microscopy and ballistic electron emission microscopy studies of the electronic states of the uncovered and chemisorbed-oxygen covered surface of AlOx tunnel barrier layers. These states change when chemisorbed oxygen ions are moved into the oxide by either flood gun electron bombardment or by thermal annealing. While untreated samples exhibit band tails extending to zero bias, the former, if sufficiently energetic, results in locally well defined conduction band onsets at ∼1V, while the latter results in a progressively higher local conduction band onset, exceeding 2.3 V for 500 and 600 °C thermal anneals.

Oxygen stoichiometry and instability in aluminum oxide tunnel barrier layers

We present X-ray photoelectron spectroscopy data which show that the chemisorbed oxygen previously observed to be on the surface of thin AlOx layers formed by room temperature thermal oxidation is bound by oxygen vacancies in the oxide. Increasing the electric field across the oxide, either by over-coating with a metallic electrode, or by electron bombardment, drives this surface chemisorbed oxygen into the vacancy sites. Due to the low bonding energies of these oxygen sites, subsequent oxygen exposures draw these ions back to the surface, reforming chemisorbed O$_2^-$. Al/AlOx/Al tunnel junctions incorporating electron bombarded AlOx barriers show a significant reduction in the low frequency junction resistance noise level at 4.2 K.

Aluminum oxide tunnel barriers for single electron memory devices

We report measurements on single electron memory devices where the memory island, a floating gate, is charged through aluminum oxide tunnel barriers, fabricated through plasma oxidation of aluminum and atomic layer deposition (ALD) of aluminum oxide. These devices are characterized at 300 mK and show a definite threshold for tunneling through the oxide barriers indicating a potential for nonvolatile memory.