AlN Layer Research Articles

Scanning Transmission Electron Microscopy Analysis of the Si(111)–AlN–GaN Nanowire Interface Grown by Polarity‐ and Site‐Controlled Growth Method

In GaN‐on‐Si nanowire integration schemes, where the nanowires are contacted through the substrate, the interfaces between silicon substrate, AlN buffer layer, and GaN nanowire are of high interest. Herein, analysis by scanning transmission electron microscopy (STEM) of GaN nanowires grown on Si(111) by metal–organic vapor phase epitaxy using a polarity‐ and site‐controlled growth method is presented. This method is based on prestructuring the substrate, ex situ oxidation of the surface, and in situ oxide layer desorption. First, an AlN layer is grown to prevent melt‐back etching. Samples are prepared for STEM by focused ion beam cutting. STEM measurements in three different regions reveal that the AlN buffer material is polycrystalline. The degree of polycrystallinity is found to depend on the observed region: the highest degree exists at the field area between nanowires and the lowest at the sidewall of the Si‐pillars. On the sidewall, the ‐direction of the AlN grain is tilted by 30.1° with regard to the Si{111} sidewall plane, leading to reduced lattice mismatch at this location. The growth of GaN is competing with diffusion of Ga atoms through grain boundaries. The dominant mechanism is dependent on the region, leading to site‐controlled growth of nanowires.

Numerical investigation on the polarization-dependent light extraction of 275-nm AlGaN based nanowire with bowtie antenna array or passivation layer

Abstract The low light extraction efficiency (LEE) is one of the major factors hindering the application of AlGaN based deep ultraviolet (DUV) light-emitting diodes (LEDs). Here we investigate the LEE of AlGaN based nanowire (NW) DUV LEDs emitting at 275 nm for bare NW, NW integrated with aluminum (Al) bowtie antenna array, and NW with passivation layer under transverse-electric (TE) and transverse-magnetic (TM) polarization. It is observed that by integrating plasmonic Al bowtie antenna array with AlGaN based NW, the LEE up to 83% and 74% can be achieved under TE and TM polarization. In addition, the effect of the three different passivation layer SiO2, SiNx and AlN on the LEE of AlGaN based NW is also analysed, the results suggests that SiO2, which has smaller refractive index than NW core, could extract more photons from the NW and lead to large enhancement of LEE. For SiNx and AlN passivation layer, which has refractive index similar to the NW core, have strong coupling with the NW core, when the thickness of passivation layer satisfy resonance coupling conditions, the LEE could be achieved more than 80% for both TE and TM polarization. These integrated NW/antenna array and NW with passivation layer system can provide guidelines for designing other nano-photonic devices.

Deep Ultraviolet Excitation Photoluminescence Characteristics and Correlative Investigation of Al-Rich AlGaN Films on Sapphire.

AlGaN is attractive for fabricating deep ultraviolet (DUV) optoelectronic and electronic devices of light-emitting diodes (LEDs), photodetectors, high-electron-mobility field-effect transistors (HEMTs), etc. We investigated the quality and optical properties of AlxGa1-xN films with high Al fractions (60-87%) grown on sapphire substrates, including AlN nucleation and buffer layers, by metal-organic chemical vapor deposition (MOCVD). They were initially investigated by high-resolution X-ray diffraction (HR-XRD) and Raman scattering (RS). A set of formulas was deduced to precisely determine x(Al) from HR-XRD data. Screw dislocation densities in AlGaN and AlN layers were deduced. DUV (266 nm) excitation RS clearly exhibits AlGaN Raman features far superior to visible RS. The simulation on the AlGaN longitudinal optical (LO) phonon modes determined the carrier concentrations in the AlGaN layers. The spatial correlation model (SCM) analyses on E2(high) modes examined the AlGaN and AlN layer properties. These high-x(Al) AlxGa1-xN films possess large energy gaps Eg in the range of 5.0-5.6 eV and are excited by a DUV 213 nm (5.8 eV) laser for room temperature (RT) photoluminescence (PL) and temperature-dependent photoluminescence (TDPL) studies. The obtained RTPL bands were deconvoluted with two Gaussian bands, indicating cross-bandgap emission, phonon replicas, and variation with x(Al). TDPL spectra at 20-300 K of Al0.87Ga0.13N exhibit the T-dependences of the band-edge luminescence near 5.6 eV and the phonon replicas. According to the Arrhenius fitting diagram of the TDPL spectra, the activation energy (19.6 meV) associated with the luminescence process is acquired. In addition, the combined PL and time-resolved photoluminescence (TRPL) spectroscopic system with DUV 213 nm pulse excitation was applied to measure a typical AlGaN multiple-quantum well (MQW). The RT TRPL decay spectra were obtained at four wavelengths and fitted by two exponentials with fast and slow decay times of ~0.2 ns and 1-2 ns, respectively. Comprehensive studies on these Al-rich AlGaN epi-films and a typical AlGaN MQW are achieved with unique and significant results, which are useful to researchers in the field.

Performance optimization of AlN ultrasonic thin-film sensors deposited by RF magnetron sputtering

The AlN thin-film ultrasonic transducers were deposited by reactive RF magnetron sputtering technique. The effects of deposition parameters: target-substrate distance, argon-nitrogen flow ratio, deposition time, substrate temperature and radial distance from the deposition center on the ultrasonic performance of AlN thin films were studied. A metal electrode layer was deposited on the AlN film transducer to fabricate an ultrasonic temperature sensor, and the effects of the size and thickness of the electrode layer on the performance of the sensor were studied. Piezoelectric response measurements were performed in air over a temperature range of −60 °C–900 °C, and the dependence of ultrasonic response (time-of-flight and pulse echo amplitude) on temperature was analyzed. Long-term heat treatment in air at 750 °C for 128 h showed that the high-entropy alloy oxide protective layer could effectively delay oxidation of the AlN layer and improve the service life of the sensor.

A 326 nm pure ultraviolet light sources achieved in a Ga[formula omitted]O[formula omitted] microwire heterojunction through interface optimization and surface-modification

Low-dimensional Ga2O3 single-crystals have caused widespread attentions in the potential of developing ultraviolet light sources due to its ultrabroad bandgap, low-budget, high thermally stable, high breakdown voltage and others. Herein, we exhibit a significant route to construct one-dimensional Ga2O3 microwire heterojunction deep-ultraviolet light-emitting diode (LED). The resulting electroluminescence is positioned at 326 nm with a narrow linewidth of about 22.5 nm, which is the shortest wavelengths once published for the Ga2O3-related light sources. In the well-fabricated LED, an intermediate AlN layer enables appropriately to manipulate band alignment of n-Ga2O3/p-GaN heterojunction, thus achieving efficient confinement of electron–holes spreading and radiative recombination within the Ga2O3 microwire active medium. Benefited from surface-modified Pt nanoparticles, the LED’s electroluminescence efficiency and brightness can be plasmonically boosted. More importantly, the peak energy at 3.8 eV obtained under forward bias, which is smaller than the Ga2O3 bandgap, could be resulted from radiative recombination of weakly-bounded electron–holes inside the Ga2O3 microwires. Therefore, the Ga2O3 monocrystalline wires synthesized using high-temperature carbothermal reduction, are expected as promising-looking candidates to develop environmentally friendly, easy miniaturization, highly-stable deep-ultraviolet light sources and photonic devices.

Relation of V/III ratio of AlN interlayer with the polarity of nitride

Abstract N-polar GaN film was obtained by using a high-temperature AlN buffer layer. It was found that the polarity could be inverted by a thin low-temperature AlN interlayer with the same V/III ratio as that of the high-temperature AlN layer. Continuing to increase the V/III ratio of the low-temperature AlN interlayer, the Ga-polarity of GaN film was inverted to N-polarity again but the crystal quality and surface roughness of GaN film greatly deteriorated. Finally, we analyzed the chemical environment of the AlN layer by x-ray photoelectron spectroscopy (XPS), which provides a new direction for the control of GaN polarity.

Low-temperature formation of Ti2AlN during post-deposition annealing of reactive multilayer systems

Mn+1AXn-phase Ti2AlN thin-films were synthesized using reactive sputtering-based methods involving the deposition of single-layer TiAlN, and Ti/AlN and TiN/TiAl multilayers of various modulation periods at ambient temperature and subsequent annealing at elevated temperatures. Ex situ and in situ x-ray diffraction measurements were used to characterize the Ti2AlN formation temperature and phase fraction. During annealing, Ti/AlN multilayers yielded Ti2AlN at a significantly lower in situ temperature of 650 °C compared to TiN/TiAl multilayers or single-layer TiAlN (750 °C). The results suggest a reactive multilayer mechanism whereby distinct Ti and AlN layers react readily to release exothermic energy resulting in lower phase transition temperatures compared to TiN and TiAl layers or mixed TiAlN. With a modulation period of 5 nm, however, Ti/AlN multilayers yielded Ti2AlN at a higher temperature of 750 °C, indicating a disruption of the reactive multilayer mechanism due to a higher fraction of low-enthalpy interfacial TiAlN within the film.

The role of grain boundary and alloy scattering within the Callaway model to calculate lattice thermal conductivity in GaN/AlN superlattice

The grain boundary and alloy scattering within the Debye-Callaway model were introduced to calculate the temperature-dependent lattice thermal conductivity (LTC) in the GaN/AlN superlattice. The superlattice layers are assumed to be grains, and the sample is then treated as a multigrain material. The computations include various physical parameters related to Aluminum alloy compositions, such as Debye temperature, atomic mass, lattice volume, density, alloy scattering factor and deformation energy. In general, the sample size effect on LTC in this superlattice structure was similar to any single component solids, but it has a significant influence from the grain boundaries represented by the thickness of layers in the form of LTCPeakpoint.=5.9925e0.0005L2 at the peak point maximum and LTC(600K)=0.344L at 600K, L is the sample size. The dislocations in these samples are controlled by the inbuilt AlN layers with the dependence of NDisl.=−0.542LAlN+7.4.

Metalorganic Vapor‐Phase Epitaxy of +c/−c GaN Polarity Inverted Bilayer for Transverse Quasi‐Phase‐Matched Wavelength Conversion Device

Photon‐pair generation based on optical parametric down‐conversion has attracted for the application as a light source for quantum information. Highly efficient wavelength‐conversion devices require a polarity‐inversion structure when using nitride semiconductors. A transverse quasi‐phase‐matching (QPM) polarity‐inverted GaN bilayer channel waveguide device is suitable for efficient wavelength conversion. This study designed a cross‐section device to satisfy the modal dispersion phase‐matching condition between the TM02 mode pump light and the TM00 mode signal/idler light. Moreover, an AlN oxidation interlayer fabricates the Ga‐polar/N‐polar (+c/−c) GaN layers via metalorganic vapor‐phase epitaxy (MOVPE). A 145 nm thick film layer with a macro‐step‐free surface is grown by optimizing the −c‐GaN growth conditions and reducing the substrate off‐angle to 0.2°. Next, the AlN layer is oxidized in an electric furnace and MOVPE is used to regrow a 1500 nm thick +c‐GaN layer. A macrosteps‐free surface can be achieved by reducing the off‐angle to 0.2° and optimizing the −c‐GaN growth conditions to avoid hillock formation. These results pave the way for improving the efficiency of GaN transverse QPM wavelength‐conversion devices.

Impact of thick N-polar AlN growth on crystalline quality and electrical properties of N-polar GaN/AlGaN/AlN FET

In this study, we attempted to fabricate N-polar GaN/AlGaN/AlN heterostructure FET by changing the thickness of the AlN layer. An Al-polar tiny-pit AlN layer and a polarity inversion method were used to grow N-polar AlN on vicinal sapphire via the metal-organic vapor phase epitaxy. The samples with an AlN thickness of up to 3.4 μm exhibited a crack-free surface. Additionally, the twist component of the crystal quality improved with an increasing AlN thickness. Consequently, the mobility, sheet conductivity, and surface flatness improved. The FET fabricated from the sample with a thicker AlN layer achieved a higher drain current of 279 mA mm−1 at a gate bias of V G = 3 V.

Tackling residual tensile stress in AlN-on-Si nucleation layers via the controlled Si(111) surface nitridation

This work is devoted to the study of the influence of controlled Si(111) surface nitridation on the epitaxial growth of AlN-on-Si nucleation layers with reduced tensile stress on ordered crystalline silicon nitride phase. The Si(111) surface nitridation process was performed at low ammonia flux and substrate temperatures in the range of 700–900 °C and was studied using RHEED and STM techniques. A universal criterion, namely the stage of the nitridation process completion is introduced, taking into account the influence of substrate temperature, ammonia flux and nitridation time. The 100 nm AlN nucleation layer on silicon substrates grown by ammonia molecular beam epitaxy is studied using AFM, XRD, HR-TEM and Raman spectroscopy techniques. The Raman data show that reducing the nitridation temperature from 900 °C to 700 °C not only deteriorates the crystalline quality of the subsequent AlN nucleation layers, but also reduces the residual tensile stress by almost 30 %. In the present contribution, micro-Raman spectroscopy is used to determine the nature of the defects formed during the high temperature growth of the AlN nucleation layers and confirms them to be inversion domains. The HR-TEM technique was used to study the AlN/Si interface in AlN-on-Si nucleation layers grown on a nitridated silicon surface at 700 °C and 900 °C at the optimum stage of the nitridation process completion. HR-TEM images of AlN nucleation layers revealed regions with different AlN/Si(111) interfaces: 1) AlN/amorph-Si3N4/Si, 2) AlN/SiN(8 × 8)/Si, and 3) AlN/Si with a sharp interface boundary. Using fast Fourier transform image analysis, it is shown that the presence of amorphous Si3N4 phase inclusions in the AlN/Si interface boundary introduces tensile stresses in the AlN nucleation layer which can be reduced by lowering the nitridation temperature. The results obtained clearly show that one of the causes of cracks in III-nitride layers grown on silicon substrates is the formation of tensile AlN layers with a high content of the amorphous Si3N4 phase at the AlN/Si interface, which is characteristic of silicon nitridation at elevated temperatures (> 700 °C).

First-Principles Investigation on the Tunable Electronic Structures and Photocatalytic Properties of AlN/Sc2CF2 and GaN/Sc2CF2 Heterostructures.

Heterostructure catalysts are highly anticipated in the field of photocatalytic water splitting. AlN/Sc2CF2 and GaN/Sc2CF2 heterostructures are proposed in this work, and the electronic structures were revealed with the first-principles method to explore their photocatalytic properties for water splitting. The results found that the thermodynamically stable AlN/Sc2CF2 and GaN/Sc2CF2 heterostructures are indirect semiconductors with reduced band gaps of 1.75 eV and 1.84 eV, respectively. These two heterostructures have been confirmed to have type-Ⅰ band alignments, with both VBM and CBM contributed to by the Sc2CF2 layer. AlN/Sc2CF2 and GaN/Sc2CF2 heterostructures exhibit the potential for photocatalytic water splitting as their VBM and CBM stride over the redox potential of water. Gibbs free energy changes in HER occurring on AlN/Sc2CF2 and GaN/Sc2CF2 heterostructures are as low as -0.31 eV and -0.59 eV, respectively. The Gibbs free energy change in HER on the AlN (GaN) layer is much lower than that on the Sc2CF2 surface, owing to the stronger adsorption of H on AlN (GaN). The AlN/Sc2CF2 and GaN/Sc2CF2 heterostructures possess significant improvements in absorption range and intensity compared to monolayered AlN, GaN, and Sc2CF2. In addition, the band gaps, edge positions, and absorption properties of AlN/Sc2CF2 and GaN/Sc2CF2 heterostructures can be effectively tuned with strains. All the results indicate that AlN/Sc2CF2 and GaN/Sc2CF2 heterostructures are suitable catalysts for photocatalytic water splitting.

Effect of the Twist Crystallinity of N‐Polar AlN Underlayer on the Electrical Properties of GaN/AlN Structures

Recently, N‐polar GaN/AlGaN/AlN high‐electron‐mobility transistors (HEMTs) have been demonstrated using molecular beam epitaxy (MBE). However, the MBE method is not suitable for mass production because of the need for ultrahigh vacuum, small chamber size, and long deposition time. This study fabricates N‐polar GaN‐ or AlGaN‐channel HEMTs on AlN with polarization directions opposite to those of Ga‐polar GaN‐based HEMTs without any cap layer and demonstrates field‐effect transistor static characteristics. In this article, the focus is on the crystal quality of the underlying layer and the effect of crystalline quality on electrical properties is investigated. The crystalline quality of the twist component of the N‐polar AlN layer is improved by combining the Al‐polar tiny‐pit layer and polarity inversion from Al‐ to N‐polar. Finally, it is shown that the crystalline quality of the twist component is a crucial factor for improving the electron mobility of the N‐polar GaN channel and simultaneously increasing IDS.

Contactless spectroscopy of photoactive centres in sapphire and nitride layered structures

Spectroscopy of photo-active centres in wide bandgap optical materials with absorption and emission bands in the range close to vacuum ultraviolet spectrum is complicated. In this work, the pulsed photo-ionization (PPI) transients, electron spin resonance (ESR) and proton induced luminescence spectroscopy techniques have been combined to evaluate the origin and parameters of deep centres in crystalline sapphire substrates. Additionally, the layered structures with MOCVD grown thin top layers of GaN, AlGaN and AlN on sapphire substrates were examined in order to clarify origin of emission bands related to the epilayers and sapphire. The sapphire assigned emission bands have been ascribed to the F+ centres, characterized by photo-activation energy of 4.8 eV. Prevailing of F+ centres has been confirmed by ESR spectroscopy results. The covering nitride layers of AlN, AlGaN and GaN led to appearance of the additional PPI spectral peaks ascribed to recombination on the interface between epitaxial material and sapphire substrate.

A Novel high-voltage DMG Fe-doped AlGaN/AlN/GaN HEMTs with sheet charge density model

In this work, two-dimensional electron gas of the dual material gate Fe doped AlGaN/AlN/GaN High Electron Mobility Transistors (HEMTs) device, sheet charge density model is demonstrated. The model is constructed by considering the electron charge in the barrier layer and the quasi triangular quantum well. This sheet charge density is calculated by Fermi-Dirac statistics by the formation of various sub energy bands and it is valid for all bias voltages. Higher carrier densities are produced and the introduction of the Fe-doped AlN layer reduces the electrons penetration to pass through the AlGaN barrier layer. The model's transcoductance variation is basically constant over an extensive variety of gate source voltages, thereby rendering it perfect regarding high-performance amplifications. The developed analytical model is demonstrated and the simulation results are validated with TCAD simulation. A good agreement is achieved with both analytical and simulation results for all of the voltages employed and device geometries.

Low-defect and stress-free AlN(0001) nanoprisms and microrods selectively grown on micro-patterned c-sapphire substrate by plasma-assisted molecular beam epitaxy

This paper describes different growth modes of AlN layers on micro-cone patterned c-sapphire substrates (μ-PSSs) using plasma-assisted molecular beam epitaxy. Ordered arrays of AlN nanoprisms and microrods were selectively grown on the tips of μ-PSS's microcones according to a bottom-up formation mechanism using sequential migration enhanced and metal-modulated epitaxy (MME) under metal-rich growth conditions at 820 °C. Transmission electron microscopy revealed structurally perfect AlN regions above the tips of the μ-PSSs, which initiate as inverted nanopyramids with {1011¯} side faces, evolving into hexagonal nanoprisms with orientations of {11¯00} and (0001) for side and top surfaces, respectively. The diameter and height of these ordered hexagonal nanoprisms, which have a 60% probability of nucleating, were about 1 μm. Long-term MME growth of these nanoprisms in both vertical and lateral directions led to the formation of AlN(0001) microrods with a maximum possible diameter of two micrometers and a height of up to 6 μm. Atomic force microscopy revealed a mixed step-flow and 2D nucleation growth mechanism for the flat tops of these AlN nanoprisms and microrods with an average surface roughness of 1–2 monolayers. Micro-Raman spectroscopy demonstrated narrow E2 (high) linewidths of 3.8 and 4.2 cm−1 for essentially stress-free AlN nanoprisms and microrods, respectively.

Direct high-temperature growth of GaN on Si using trimethylaluminum preflow enabling vertically-conducting heterostructures

In this work, we demonstrate that GaN can be directly grown at high temperature on Si(111) substrates by metalorganic CVD without using any intentional AlN buffer, by simply employing a trimethylaluminum (TMAl) preflow. We found that n-GaN layers directly grown on n-Si with a TMAl preflow not only present a better crystalline quality compared to the use of thin AlN buffers, but also exhibit orders-of-magnitude improvement in vertical current conduction between GaN and Si, thanks to the absence of highly resistive AlN layers. Our proposed technique opens a new pathway for the effective realization of fully-vertical GaN-on-Si devices.

Regulation of oxygen defects in AlGaN-based epilayers grown on high temperature annealed AlN template

The regulation of oxygen (O) point defects in AlGaN-based epilayers grown on high-temperature annealed AlN (HTA-AlN) template by metal–organic chemical vapor deposition (MOCVD) is systematically investigated in this work. The concentration of O impurity in AlN epilayers is restricted to 1 × 1017 cm−3, but decreases by 59 % and 27 % when the AlN layer is replaced by the Al0.5Ga0.5N interlayer (IL) and AlN/Al0.5Ga0.5N superlattice (SL), respectively. By analyzing the growth conditions, the O impurity can be inhibited by raising V/III ratio or decreasing Al component, which increases the formation energy of O point defects according to first-principles calculation. This work provides accurate guidance for regulating O point defects in AlGaN-based materials.

Controllable regulation of diamond nucleation and growth on GaN substrates through pulse bias duty ratio

GaN/AlN/diamond composite structures were prepared by the pulsed-DC bias-enhance nucleation (BEN) technique. Smooth diamond interface on GaN surface obtained for the first time by BEN technique. Different bias duty ratios (30%–70 %) can regulate the nucleation of diamond. The nucleation density increases and then decreases with the increase of duty ratio. The highest nucleation density was 1011 cm−2 which enough to grow a dense diamond layer on GaN. The effect of BEN treatment on the interface was investigated and some positive and negative results were obtained. After diamond deposition, GaN layer was protected by amorphous carbon and dielectric layers from hydrogen plasma, which implies that the BEN technique has the potential to be applied to grow diamond on GaN surfaces. A smooth and complete interfacial structure was obtained after diamond deposition. After the BEN treatment, 10 nm AlN layer was carbonized into an amorphous structure. BEN duty cycle can modulate GaN/AlN/diamond interface structure, which may reduce interfacial thermal conductivity. These results demonstrate the potential of BEN technique for diamond deposition on GaN substrates and provides a reference for further optimization.

Perpendicular magnetic anisotropy of Pd/Co2MnSi/AlN/Pd multilayer films

In this paper, the perpendicular magnetic anisotropy（PMA）of Pd/Co2MnSi (CMS)/AlN/Pd multilayer film is studied, which is designed based on the two-interface interaction, the orbital hybridization effect of Pd5d-Co3d electrons at the Pd/CMS interface and the orbital hybridization effect of Co3d-N2p electrons at the CMS/AlN interface. Compared with the Pd/CMS/Pd multilayer film, the PMA of the Pd/CMS/AlN/Pd structure shows significant enhancement with the insertion of the AlN layer. The Hall resistance (RHall) of the Pd/CMS/AlN/Pd structure reached 0.02 Ω (increased by 300 %) and the coercive force (Hc) is 388 Oe (increased by about 76 %). The magnetic anisotropic energy density (Keff) is 0.61Merg/cm3 (increased by about 135 %). The PMA was optimized with the film factor (layer thickness) of Pd(6 nm)/CMS(5 nm)/AlN(6 nm)/Pd(6 nm). The X-Ray Diffraction（XRD）and High Resolution Transmission Electron Microscope（HRTEM）analysis showed that the PMA is affected by the crystallinity and interface quality of multilayer films.