Nanoporous Cu (np-Cu) films can be employed in the electronic packaging as materials facilitating chip-to-substrate interconnections, which is realized by Cu-on-Cu bonding. Unlike their bulk counterparts, np metals feature unique interconnected pore-ligament structure with a length scale in the range of single-to-tens of nanometers. This results in a high surface area-to-volume ratio accompanied with a substantially lower melting temperature. Research has been done in the field to experiment with Cu-on-Cu interconnects realized by np-Cu precursor films (1). While the initial results are undoubtedly promising, difficulties haver been met with sufficiently lowering the sintering / soldering temperature below 380-400oC. A way to address these shortcomings is to develop of approaches to sintering at much lower temperatures by introducing Sn into the np-Cu structures either directly or by coating then followed by processing to produce at lower sintering temperature Cu-Sn bonds with low resistivity and a greater current carrying capability than bare np-Cu. The foundation of this study relies on the development of fine structured np-Cu films with an open and uniform interconnected network of ultra-fine ligaments and pores of size preferably in the single digit nanometer range.The present report is focused on the development of a two-step all-electrochemical approach for the synthesis of the targeted np-Cu structures including (i) a controlled electrodeposition of Cu-based precursor alloy with a less-noble counterpart that is then (ii) selectively removed (de-alloyed) by anodization at appropriate potential to leave behind the desired “spongy” np-Cu structure (2). Therefore, the first part of this report introduces and discusses the development of protocols for flat and uniform deposition of Cu-Zn and Cu-Mn alloys that could both serve as precursors of the synthetically targeted np-Cu films. The choice of said alloy systems is motivated by the ability of Zn and Mn to form single-phase alloys or intermetallic compounds with Cu thus ensuring the ultra-fine length scale of the eventually synthesized np Cu structure. The alloy deposition routines included use of a pyrophosphate (P2O7 4-) plating bath for Cu-Zn alloys which were shown to have high stability and optimizable for the plating of smooth and fine-grained brass deposits (3). Also, ammonium sulfate with excess of ammonia as complexing agent, was employed in the optimization activity aimed at the deposition of continuous and relatively smooth Cu-Mn deposits (4). The report discusses the optimization of plating parameters and conditions along with the subsequent structural and compositional characterization of the accordingly deposited precursor alloys with 60 at % and higher representation of the less noble constituent.Next, the electrochemical de-alloying of as-deposited CuxZn(1-x) and CuxMn(1-x) precursor alloys on a gold substrate is introduced and discussed. Alike with the first part of the report, the emphasis is on the optimization routines that looked at the effect of de-alloying scan rate, de-alloying at different constant potentials, de-alloying bath, and precursor alloy composition on the morphology and composition of the resulting np-Cu. A valuable part of the report is the demonstration of how the implementation of best combinations of optimized parameters and conditions leads to the synthesis of interconnected pore-ligament thin film networks of np-Cu structures with average ligament sizes in the range of 15-30 nm. In conclusion, the discussion takes direction towards ideas and perspectives for improvement of the uniformity and further refinement of the pore ligament length scale. Finally, consideration is also given to the intended approaches to introduce Sn on or into the accordingly synthesized np-Cu films and eventually convert them to np-Cu-Sn alloy ready for sintering/soldering at low temperatures.