Two-dimensional (2D) nanosheets of layered transition metal dichalcogenides (TMDs) have received significant attention because some of them are semiconductors with sizable band gaps and are naturally abundant. Here, we report the photolithographic-pattern transfer (PPT) technology used to fabricate FETs of two-dimensional materials. To explore the electrical properties and realize functional optoelectronics and electronics from semiconductors, the fabrication of devices (such as field-effect transistors (FET), diodes and Hall bars) and integrated circuits is necessary and important. An essential step in fabricating micro-/nanoelectronics is making the metal electrode arrays. Such a PPT method can be used to efficiently design and prepare complicated electrode arrays for electronics and optoelectronics, and is especially suitable for 2D materials. Few-layer MoS2 made by electron beam lithography (EBL), gold-wire mask moving (GWM), and this method are used as templates for comparison. The mobility of our thin MoS2 flake is comparable to the results of devices from EBL and better than the results of the GWM method. Further complicated device applications such as a top-gate FET, a Hall bar, and heterostructure transistors could also be easily realized based on such a method. We also report the growth and electric transport of Co doped MoS2 bilayer. As the initial loading of the sulfur increases, the morphology of the Co x Mo1– x S2 (0 x x Mo1− x S2 nanosheet gradually and forms hexagonal film induced by the nanosheet. Electrical transport measurements reveal that the Co x Mo1− x S2 nanosheets and CoS2 films exhibit n-type semiconducting transport behavior and half-metallic behavior, respectively. Theoretical calculations of their band structures agree well with the experimental results. These alloy nanosheets of Co x Mo1− x S2 should have large potential applications in the tunable optoelectronics. Then, we report the vapor phase growth and optoelectronic property of vertical bilayer SnS2/MoS2 heterostructure. 2D van der Waals heterostructures with different types of band alignment have recently attracted great attention due to their unique optical and electrical properties. Most 2D heterostructures are formed by transfer-stacking two monolayers together, but the interfacial quality and controllable orientation of such artificial structures are inferior to those epitaxial grown heterostructures. An extremely Type II band alignment exists in this 2D heterostructure, with band offset larger than any other reported. Consistent with the large band offset, distinctive optical properties including strong photoluminescence quenching in the heterostructure area are observed in the heterostructure. The SnS2/MoS2 heterostructures also exhibit well-aligned lattice orientation between the two layers, forming a periodic Moire superlattice pattern with high lattice mismatch. Electrical transport and photoresponsive studies demonstrate that the SnS2/MoS2 heterostructures exhibit an obvious photovoltaic effect and possess high on/off ratio (>106), high mobility (27.6 cm2 V−1 s−1) and high photoresponsivity (1.36 A W−1). Efficient synthesis of such vertical heterostructure may open up new realms in 2D functional electronics and optoelectronics. Finally we give some perspectives on studies of two-dimensional materials in future.