All-optical Memory Research Articles

High Switching-Speed Operation of Optical Memory Based on Polarization Bistable Vertical-Cavity Surface-Emitting Laser

Operation conditions of all-optical buffer memories based on polarization bistable vertical-cavity surface-emitting lasers (VCSELs) were investigated. The switching power dependence on the frequency detuning of the input optical signal was measured for a 980-nm polarization bistable VCSEL. The proper operating conditions for 10-Gb/s memory operation were also measured and found to be on the negative detuning side. Calculations based on a two-mode rate-equation model successfully explained the measured characteristics of the switching power dependence on the frequency detuning and the operating conditions. Maximum data rates for the memory operation strongly depended on the <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">Q</i> factor (i.e., photon lifetime) of the VCSELs. A possibility of 40-Gb/s memory operation using a polarization bistable VCSEL with a <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">Q</i> factor as low as 500 was shown.

All-optical flip-flop memory using SOA-based modelocked ring lasers with optical feedback

An all-optical flip-flop memory is built-up based on two ring lasers, where a semiconductor optical amplifier (SOA) is shared in two laser cavities. The flip-flop outputs short pulses that have tunable central wavelengths, a pulsewidth of 1.5 ps (FWHM) at 10 GHz, generated by actively modelocking using phase modulation. Bistability of the flip-flop is observed by introducing optical feedback via an external cavity. The static contrast ratio of the device is over 20 dB between the dominating and suppressed states and the switching power is as low as 18 dBm.

All-optical memory operation of 980-nm polarization bistable VCSEL for 20-Gb/s PRBS RZ and 40-Gb/s NRZ data signals

The fastest known operation of all-optical flip-flop memory was experimentally demonstrated using a 980-nm polarization bistable vertical-cavity surface-emitting laser (VCSEL). Operating conditions of the input signal power and the frequency detuning to achieve the fast optical memory operation were characterized experimentally. At the optimum condition, 1-bit data signals were arbitrarily sampled and memorized from a 2(6)-1 pseudorandom bit sequence return-to-zero signal at 20 Gb/s by using AND gate and memory functionalities obtained from the polarization bistability. In addition, 1-bit memory operation was achieved for a 6-bit non-return-to-zero signal at 40 Gb/s. Both memory operations required 250-microW data signal power and had optical gain. The high potential of all-optical flip-flop memories based on polarization bistable VCSELs for use in ultrafast all-optical future networks was demonstrated.

Design and applications of discrete mode Fabry-Perot diode lasers

We describe how the multimode spectrum of a Fabry-Perot diode laser can be tailored using a non-periodic patterning of the cavity effective index. The cavity geometry is obtained from the solution of an inverse problem based on a perturbative calculation of the threshold gain of the longitudinal modes of the cavity. Experimental measurements are presented that demonstrate an all-optical memory element based on the injection locking bistability of a two-mode device. We also demonstrate passive harmonic mode-locking of a device designed to support a comb of six modes. Near-transform limited pulsed output with 2 ps pulse duration at 100 GHz repetition rate was obtained. Prospects for the extension of our approach to locking of larger numbers of modes over wider bandwidths are discussed. Similarities between the effective index profiles found in these devices and those of related devices and grating structures are also highlighted.

An ultra-small, low-power, all-optical flip-flop memory on a silicon chip

Ultra-small, low-power, all-optical switching and memory elements, such as all-optical flip-flops, as well as photonic integrated circuits of many such elements, are in great demand for all-optical signal buffering, switching and processing. Silicon-on-insulator is considered to be a promising platform to accommodate such photonic circuits in large-scale configurations. Through heterogeneous integration of InP membranes onto silicon-on-insulator, a single microdisk laser with a diameter of 7.5 µm, coupled to a silicon-on-insulator wire waveguide, is demonstrated here as an all-optical flip-flop working in a continuous-wave regime with an electrical power consumption of a few milliwatts, allowing switching in 60 ps with 1.8 fJ optical energy. The total power consumption and the device size are, to the best of our knowledge, the smallest reported to date at telecom wavelengths. This is also the only electrically pumped, all-optical flip-flop on silicon built upon complementary metal-oxide semiconductor technology. Scientists demonstrate that a single 7.5-μm-diameter microdisk laser coupled to a silicon-on-insulator wire waveguide can work as an all-optical flip-flop memory. Under a continuous bias of 3.5 mA, flip-flop operation is demonstrated using optical triggering pulses of 1.8 fJ and with a switching time of 60 ps. This device is attractive for on-chip all-optical signal buffering, switching, and processing.

All-optical functions based on semiconductor ring lasers (Invited Paper)

Semiconductor ring laser (SRL) has been shown to possess robust bistability between its two possible directions, i.e., clockwise (cw) and counter-clockwise (ccw) lasing, routinely demonstrating directional extinction ratio (DER) of > 25 dB. In this paper, experimental schemes and results using the SRL as a universal photonic digital element to form all-optical logic, memory, and signal processing circuits are summarized. It is demonstrated that the SRL can be used for both combinatorial and sequential logic functions, and as all-optical regeneration devices. Furthermore, it is shown that a SRL logic circuit can be all-optically reconfigured to perform different all-optical logic functions.

Experimental Demonstration of Multi-Bit Optical Buffer Memory Using 1.55-$\mu{\hbox {m}}$ Polarization Bistable Vertical-Cavity Surface-Emitting Lasers

We demonstrate a novel all-optical buffer memory using 1.55-μm polarization bistable vertical-cavity surface-emitting lasers (VCSELs). A one-bit data is stored as one of two orthogonal polarization states of a VCSEL in this memory. The polarization state is transferred from the VCSEL to another VCSEL which is optically connected in cascade as a shift register. A 4-bit optical buffer memory is constructed using two sets of the shift-register memory connected in parallel. These results show the technical feasibility of multi-bit optical buffer memory.

All-optical binary flip-flop with the help of Terahertz Optical Asymmetric Demultiplexer

The memory device is very important as they store various values either temporary or permanently. Optical flip-flop memories form a fundamental building block for all-optical packet switches in the next generation communication networks. All-optical flip-flop memory with the help of Terahertz Optical Asymmetric Demultiplexer (TOAD) is proposed and described. Principles and possibilities of all-optical circuits for TOAD based S---R, J---K, D and T flip-flop are reported. Numerical simulation confirming described method is also given in this paper.

Design of all-optical read-only memory

A semiconductor optical amplifier-based all-optical read-only memory (ROM) is successfully demonstrated through simulations using a one-level simplification method optimized for optical logic circuits. Design details are presented, and advantages are discussed in comparison with an all-optical ROM-employing decoder. We demonstrate that eight characters can be stored at each address in the American Standard Code for Information Interchange.

Quaternary Galois field adder based all-optical multivalued logic circuits

Galois field (GF) algebraic expressions have been found to be promising choices for reversible and quantum implementation of multivalued logic. For the first time to our knowledge, we developed GF(4) adder multivalued (four valued) logic circuits in an all-optical domain. The principle and possibilities of an all-optical GF(4) adder circuit are described. The theoretical model is presented and verified through numerical simulation. The quaternary inverter, successor, clockwise cycle, and counterclockwise cycle gates are proposed with the help of the all-optical GF(4) adder circuit. In this scheme different quaternary logical states are represented by different polarized light. A terahertz optical asymmetric demultiplexer interferometric switch plays an important role in this scheme.

Time-delayed entanglement from coherently coupled nonlinear cavities

The output fields of a pair of coherently coupled nonlinear optical cavities are found to exhibit strong optical entanglement. For sufficiently strong coupling time-delayed quantum correlations are observed providing a resource for quantum information protocols such as all-optical quantum memories. A straightforward experimental implementation applicable to whispering gallery mode resonators such as microtoroids is proposed.

All-optical memory based on the injection locking bistability of a two-color laser diode

We study the injection locking bistability of a specially engineered two-color semiconductor Fabry-Pérot laser. Oscillation in the uninjected primary mode leads to a bistability of single mode and two-color equilibria. With pulsed modulation of the injected power we demonstrate an all-optical memory element based on this bistability, where the uninjected primary mode is switched with 35 dB intensity contrast. Using experimental and theoretical analysis, we describe the associated bifurcation structure, which is not found in single mode systems with optical injection.

Observations of ultraslow light-based photon logic gates: NAND/OR

We report observations of photon logic gate operations using ultraslow light phenomena in a rare-earth doped solid medium. Unlike conventional optical logic gates based on semiconductor optical amplifiers, the present photon logic gate utilizes spin coherence, which is completely free from the optical population constraint and gives potential for ultrahigh speed operations. In addition to the possibility of ultralow power operations, the usage of ultraslow light gives a benefit of all-optical buffer memory functions. Thus, the present demonstration has potential applications to cascadable photon logic devices.

All-optical on-chip bit memory based on ultra high Q InGaAsP photonic crystal

We demonstrate all-optical bit memory operation with photonic crystal (PhC) nanocavities based on an InGaAsP substrate with a band gap at a wavelength of about 1.3 microm. The optical bistability is based on a refractive index modulation caused by carrier-plasma dispersion. The operating energy required for switching is only 30 fJ, and the minimum optical bias power for bistability is 40 microW, which is about one hundred times less than that required for laser based bistable memories.

Observations of self-induced ultraslow light in a persistent spectral hole burning medium

We present observations of self induced ultraslow light in a persistent spectral hole-burning rare-earth doped crystal. The observed group delay (velocity) is as long as 40 micros (75 m/s), which is comparable to that obtained using electromagnetically induced transparency or coherent population oscillations. We analyze the observed ultraslow light as a function of frequency detuning, light intensity, and atom population (oscillator strength). The present observation of ultraslow light in a persistent spectral hole-burning medium gives potentials to all-optical information processing such as on-demand all-optical buffer memories.

SOA Fiber Ring Laser-Based Three-State Optical Memory

By exploiting three coupled semiconductor optical amplifier (SOA) fiber ring lasers, a compact, integratable, and polarization-independent three-state all-optical memory is demonstrated, with 40-dB extinction ratio for each state. Dynamic flip-flop operation between states is also demonstrated with switching pulse energy of 13.6 nJ. Due to the broad bandwidth of SOA gain spectrum, the wavelength range of set pulses is large. Finally, the transition behavior of state switching is investigated.

On-Chip All-Optical Switching and Memory by Silicon Photonic Crystal Nanocavities

We review our recent studies on all-optical switching and memory operations based on thermo-optic and carrier-plasma nonlinearities both induced by two-photon absorption in silicon photonic crystal nanocavities. Owing to high-Q and small volume of these photonic crystal cavities, we have demonstrated that the switching power can be largely reduced. In addition, we demonstrate that the switching time is also reduced in nanocavity devices because of their short diffusion time. These features are important for all-optical nonlinear processing in silicon photonics technologies, since silicon is not an efficient optical nonlinear material. We discuss the effect of the carrier diffusion process in our devices, and demonstrate improvement in terms of the response speed by employing ion-implantation process. Finally, we show that coupled bistable devices lead to all-optical logic, such as flip-flop operation. These results indicate that a nanocavity-based photonic crystal platform on a silicon chip may be a promising candidate for future on-chip all-optical information processing in a largely integrated fashion.

Demonstration and characterisation of a non-inverting all-optical read/write regenerative memory

An all-optical regenerative memory device using a single loop mirror and a semiconductor optical amplifier is experimentally demonstrated. This configuration has potential for a low power all-optical stable memory device with non-inverting characteristics where packets are stored by continuously injecting the regenerated data back into the loop.

Two-soliton interaction in the vicinity of a defect inside a fiber Bragg grating and its application for obtaining an all-optical memory

We study the interaction between two Bragg solitons in the vicinity of a defect inside a fiber Bragg grating. A soliton that is trapped in the defect can be released by launching a second soliton. The effect can be used to obtain an all-optical memory that is not strongly sensitive to the phase and the timing arrival of the solitons.

Storing light in optical fibers using sound waves

Increasing traffic on the Internet demands faster optical transmission networks. Future high-speed communication networks may rely largely on all-optical components that are intrinsically faster than their electronic counterparts. To achieve such networks, however, one needs to overcome a number of obstacles that exist at levels from devices to systems. For example, the lack of all-optical memory for storing optical data remains a bottleneck in modern optical information networks.1 There has been substantial progress in addressing this problem using spatial-spectral holography in systems that operate at cryogenic temperatures2 or stored light based on electromagnetically induced transparency, where optical information is impressed upon internal degrees of freedom of an ensemble of atoms or ions.3 Both of these methods, however, are limited to operating at the resonance wavelength of the ions or atoms used. These limitations have recently been partially overcome using a dynamically controlled resonator in which a single optical pulse was stored for ∼100ps.4 We recently presented a different approach: a simple storedlight approach5 in which optical pulse information is transferred onto a slowly moving hypersonic wave (∼1/40,000 of the light speed) in an optical fiber and converted back at a later time through stimulated Brillouin scattering (SBS) as illustrated in Figure 1. In the storage process, optical data pulses (of carrier frequency ν0) interact with a counterpropagating short intense ‘write’ pulse (of carrier frequency ν0 + νB, where νB is the Brillouin frequency shift of the fiber). The optical data pulses become depleted as energy is shifted to a hypersonic wave in the fiber. In the retrieval process, a short intense ‘read’ pulse at the same frequency as the ‘write’ pulse depletes the acoustic wave and releases the data back to the original optical frequency, thereby generating a replica of the incident data pulses. This stored-light approach has advantages such as room-temperature Figure 1. Stimulated Brillouin scattering allows data storage in an optical fiber. In the storage process, (a) optical data pulses interact with a ‘write’ pulse . (b) The optical data pulses become depleted as the information shifts to an acoustic wave in the fiber. To retrieve the data, (c) a ‘read’ pulse depletes the acoustic wave, (d) generating a replica of the original data pulses.5