AlInN Layer Research Articles

Growth of high quality GaN epilayer on AlInN/GaN/AlInN/GaN multilayer buffer and its device characteristics

The role of AlInN 1st /GaN/AlInN 2nd /GaN multi-layer buffer (MLB) on the growth of the high quality GaN epilayers was demonstrated by atomic force microscope (AFM), X-ray diffraction (XRD), photoluminescence, and Hall measurement. The surface morphology and crystalline quality of GaN epilayers were considerably dependent on AlInN layers thicknesses rather than those of GaN inter layers. With optimal thickness of 2 nd AlInN layer, the pit density of GaN epilayers was substantially reduced. Also, the RMS roughness of the well ordered terraces generated on the GaN surface was 1.8 A at 5 x 5 μm 2 . The omega-rocking width of GaN (0002) Bragg peak and Hall mobility of GaN epilayers grown on AlInN 1st /GaN/AlInN 2nd /GaN MLB were 190 arcsec and 500 cm 2 /Vs, while those values of GaN epilayers on single GaN buffer layer were 250 arcsec and 250 cm 2 /Vs, respectively. Especially, the light output power and operating voltage of the fabricated light emitting diodes with this new buffer layer was about 5 mW and 3.1 V (dominant luminous wavelength -460 nm) at 20 mA, respectively.

Optical Properties of Al1-xInxN Thin film on GaN Grown by MOVPE

We studied optical properties of films. Films were grown on GaN by metalorganic vapor-phase epitaxy. The AlInN layer was grown on GaN layer with an -AlOsubstrate. X-ray diffraction, optical absorption spectroscopy, photoluminescence(PL) and reflection high energy electron diffraction(RHEED) measurements of AlInN showed that the crystalline quality of layer was improved around x

Optical Properties of an AlInN Interface Layer Spontaneously Formed in Hexagonal InN/Sapphire Heterostructures

We report on the spontaneous formation of an AlInN interlayer in plasma-assisted molecular beam epitaxial growth of InN on sapphire substrates. Under our growth conditions, and with an initial growth stage corresponding to the best attainable InN film quality, the AlInN layer has a thickness of ≈︂100 nm and an aluminum content of around 0.3. The layer possesses a good crystalline quality as manifested by transmission electron microscopy and X-ray diffraction (XRD) studies. No evidence of binary phase separation within the layer is found by XRD and optical absorption measurements. The energy gap bowing of the AlInN is well approximated by the expression for a disordered alloy. The possibility of AlInN to emit light is demonstrated by photo- and cathodoluminescence measurements.