Al Doping Concentration Research Articles

Evolution of the Microstructure, Hybridization, and Internal Stress of Al-Doped Diamond-Like Carbon Coatings: A Molecular Dynamics Simulation.

This work modified some parameters related to the bond order in REBO-II of the C-C interaction and simulated the ta-C:Al film deposition using the large-scale atomic/molecular massively parallel simulator especially focused on the effect of the Al-doping content on the microstructural and mechanical properties of tetrahedral amorphous carbon films. According to the Al existence state, the Al content in the films can be divided into three ranges: range I─under 5 at % Al, a single Al atom or a small cluster with 2-3 Al atoms disperses separately in the matrix; range II─at 5-20 at. % Al, the number and incorporating Al atoms of the clusters increase with the Al content; range III─above 20 at. % Al, only a solid network of aluminum atoms forms, which becomes thickened and densified with Al content increment. The existence states of Al atoms play an essential role in determining mechanical and structural properties. With Al content increasing in the films, the isolated small cluster of atoms evolved into a whole network of aluminum inter-crossing with the C-network. With the evolution of Al existence states, the sp3C fraction decreases monotonically, while the sp2C fraction increases. In range III, the network of aluminum promotes the growth of sp1C sites. The residual compressive stress in the film decreased rapidly with the Al content increasing in range I and II, but it reached a low-level constant value in range III.

Preparation of AlxZn1-xO resistive switching film by sol–gel method and its corrosion behavior in 3.5 wt% NaCl solution

AlxZn1-xO films were prepared on SS304 by using sol–gel method combined with spinning and heat treatment. The surface morphology, composition and structure of films were observed and characterized by scanning electron microscopy, X-ray diffractometer and Fourier transform infrared spectroscopy. The oxygen vacancy content and semiconductor type of AlxZn1-xO films were determined by X-ray photoelectron spectroscopy, electronic para-magnetic resonance spectroscopy, Mott-Schottky curve and density function theoretical calculation. The corrosion resistance and resistive switching performance of AlxZn1-xO films were measured by using electrochemical methods and immersion-polarisation experiments. The results show that the prepared AlxZn1-xO films are in n-type semiconductor material with a homogeneous and dense surface, the oxygen vacancy content is decreased with the increasing of Al dopping content. The corrosive resistance of AlxZn1-xO film was increased with the increasing of Al doping content with the best corrosion resistance at the doping content of 4% Al. During the immersion process, the corrosion resistance of AlxZn1-xO film was firstly increased and then decreased. The corrosion resistance of AlxZn1-xO films could be switched in the high and low resistance states under the immersion-polarization process by adjusting of the oxygen vacancy content in film.

Aluminum Doped Titanium Dioxide Thin Film for Perovskite Electron Transport Layer

Aluminum (Al) doped titanium dioxide thin film with different Al doping concentration (Al = 0 mol%, 1 mol%, 3 mol%, 5 mol% and 7 mol%) were deposited using solution spin coating technique and the effect of Al concentration on the structural, morphological and optical properties were examine. All samples were annealed at 450°C for 1 hour. XRD reveal that the films exhibits anatase crystal phase at (101) peak orientation. Based on the FESEM and AFM image it is found that, surface morphology of the film was significantly affected with different doping concentration. Al doped titanium dioxide with 3 mol% Al concentration shows the highest transmittance compared to others samples. Consequently, it is shown that different Al doping concentration plays vital roles in producing an optimum Al doped titanium dioxide thin films samples.

Effects of Al-doping concentration on the structure and electromagnetic shielding properties of transparent Ag thin films

The ultra-thin Ag films with fascinating optical properties and shielding performance have broad applications in the fields of solar cells, transparent electrodes, optical spectrum filters, low-emissivity coatings, transparent electromagnetic shielding windows, etc. In this work, by introducing Al dopant, ultra-thin Ag transparent films were successfully prepared on quartz glass substrates using magnetron co-sputtering method. Effects of the Al-doping concentration on the structure, transmittance and electromagnetic shielding properties of Ag thin films were investigated in detail. It was found that a certain amount of Al can suppress the 3D island growth of Ag granules, and thus promote nucleation and continuous in plane growth. At the Al doped concentration of 5 mol%, the prepared 9 nm Al doped Ag thin films exhibited continuous, uniform and smooth surface morphology with the RMS roughness of only 0.89 nm. Meanwhile, it has good optical property with the highest transmittance value of 80.2% in the visible range and 76.8% at 550 nm. As the increase of Al concentration, the shielding effectiveness of the films goes up and then down, and the optimum concentration for maximum shielding effectiveness (SE) is about 5 mol% at which the maximum SE can reach up to 34.5 dB. These features make the Al-doped Ag thin films very useful and practical for transparent electromagnetic shielding window.

In-situ synthesis and chemical bonding of the Al-doped β-SiC particles in Al-Si-C light alloys

In this work, the Al-doped β-SiC particles are in-situ synthesized in Al-20Si-5C alloys using the novel liquid–solid multiphase reaction method. The morphological evolution with changed Al doped β-SiC particles has been carefully investigated, and it is observed that the β-SiC transforms from the hexagonal flake to the truncated pyramid and finally evolves to the irregular polyhedral with the decrease of Al doping in SiC. The influence mechanism of the Al doped amount of SiC on the Brinell hardness and wear resistance of the Al doped SiCp reinforced aluminum matrix composites has been explored. Furthermore, the density functional theory (DFT) calculations of the chemical structures of doped SiCp with different Al doping levels indicate the covalent bond proportion in SiCp and the electron density around carbon atoms are all decreased as the increase of the Al doping content. It is also found that the Young’s modulus and Vickers hardness of doped SiCp decrease as the Al doping content increases by DFT calculations. It is proposed that this work paves a new way to improve the properties of aluminum matrix composites by regulating the doped level and chemical bonding of reinforcing particles for potential light weighting applications.

Investigation of dilute aluminum doped zinc oxide thin films: structural and morphological properties for varies applicationss

To form a better view of the influences of Al in ZnO, the crystalline structure parameters and morphological (via SEM) of Zn1-xAlxO (x=0.0, 0.02, 0.04, 0.06, 0.08 and 0.10) thin films organized onto glass substrates using by spin coating technique. The effects of Al doping on the structural ZnO nano crystalline films are investigated using (XRD), (EDAX) and (SEM). Rietveld refinement was used to examine the XRD patterns of Zn1- xAlxO thin films. This was done using Fullprof software. The XRD results showed that Al ions successfully replaced the Zn2+ lattice sites without any major change in the structure after Zn2+ substitution, and their crystallinity decreased with increasing Al doping content. Also, The XRD analysis confirmed the hexagonal structure. Lattice constant, Cell volume, Atomic Packing Fraction and surface density have been calculated. The microstructural parameters, crystallite size and lattice strain of Zn1-xAlxO thin films were calculated. The changes in microstructural parameters were discussed as dependent Al concentration. The Zn–O bond lengths and bond angle of Zn1-xAlxO were determined and have changed.

Structural Optimization of Al-Doped Li[Ni0.90Co0.05Mn0.05]O2 Cathode for Li-Ion Batteries

Aluminum is a well-known dopant element as it is used in Li[Ni0.80Co0.15Al0.05]O2 but its optimized usage in Li[Ni x Co y Mn z ]O2 cathodes with x ≥ 0.90 has not been explored in depth. Here, we survey various Al-dopant concentrations (0.5, 1, 2, 3, and 5 mol%) to investigate the effect of Al-doping of highly Ni-rich layered Li[Ni0.90Co0.05Mn0.05]O2 cathode with respect to the electrochemical and structural properties. It is shown that Al is effective in enhancing the electrochemical performance of the Li[Ni0.90Co0.05Mn0.05]O2 cathode at higher than 1 mol% concentrations but becomes detrimental at 3 mol% or greater concentrations. In particular, Li[Ni0.90Co0.05Mn0.05]O2 with 2 mol% Al-doping delivers the most optimal electrochemical performance with 93% capacity retention over 100 cycles at 0.5 C within the 2.7–4.3 V voltage range as compared to the 85% retention of Li[Ni0.90Co0.05Mn0.05]O2 under the same conditions vs Li0/Li+ in half cells. Analyses of the ex situ and in situ X-ray diffraction patterns, cell impedances over 100 cycles, and cross-sectional electrode images reveal that appropriate amounts of Al in the layered structure alleviate the extent of unit cell volume changes during charge, but excessive Al-dopant addition leads to the formation of γ-LiAlO2 byproducts that consume available Li to significantly impair the efficacy of the cathode.

The Influence of Al Doping on the Optical Characteristics of ZnO Nanopowders Obtained by the Low-Cost Sol-Gel Method

In this work, the influence of Al (0, 2, 4, and 6 wt.%) on the optical properties of ZnO has been briefly investigated and described. The undoped and doped samples were characterized using a UV-visible spectrophotometer and Photoluminescence (PL). The X-ray diffraction (XRD) data in our preceding study is also indexed, and materials are said to have a wurtzite-structured hexagonal phase and exhibit no impurity phases. The average crystallite sizes of the pure ZnO were found to increase, i.e., from 14.19 nm to 34.17 nm with an increase in temperature, and in the case of Al-doped ZnO, at a constant temperature, from 35.05 nm to 18.89 nm, respectively. The average crystallite size of AZO (Al-doped ZnO) decreases with increasing Al content. With the increasing temperature, increases in crystallinity and size of the pure ZnO have been observed. In the case of Al doping, with an increase in the concentration of doping the crystallite size is seen to be decreased, without any change in the temperature. Al doping improves the formation of the well-ordered crystalline structure of ZnO up to a certain limit of doping. The absorbance spectra were used to determine the optical band gap of the samples. The optical photoluminescence (PL) spectra of both ZnO and AZO nanopowder are obviously influenced by the increasing temperature and Al doping content, respectively. Different optical properties of ZnO and AZO were observed for different contents of Al in ZnO. The band gap of AZO nanopowder with different concentrations has been seen to be lower than that of undoped ZnO (3.10 eV), suggesting broad application potential. Also, the optical properties of ZnO were tailored by Al doping in the near visible region, suggesting various potential uses.

Environmentally Benign Structural, Topographic, and Sensing Properties of Pure and Al-Doped ZnO Thin Films.

In the present research work, Zn1–xAlxO thin films with varying proportions of Al (x = 0.00, 0.01, 0.02, and 0.03) are prepared by a chemical sol–gel spin-coating technique. The crystal structural, morphological, and humidity-sensing properties of the synthesized Zn1–xAlxO thin films, with varying concentrations of Al (x = 0.00, 0.01, 0.02, and 0.03), were characterized by X-ray diffraction (XRD) and field-emission scanning electron microscopy (FE-SEM); a special humidity-controlled chamber was designed for the humidity-sensing studies. In structural and phase analyses, XRD patterns of Zn1–xAlxO thin films show a hexagonal wurtzite crystal structure. The average crystallite sizes of Zn1–xAlxO thin films were calculated and found to be ∼18.00, 22.50, 26.30, and 29.70 nm using the X-ray diffraction (XRD) pattern. The surface morphology of Zn1–xAlxO Al (x = 0.00, 0.01, 0.02, and 0.03) thin films obtained from AFM micrographs analysis indicates the modification of the spherical grains into nanorods, which were distributed throughout the surface of the films. The SEM image of 3 wt % Al-doped ZnO nanomaterials also shows that spherical nanoparticles changed to nanorod-like structures with a high packing density. Furthermore, increasing the Al-doping concentration from 0 to 3 wt % in ZnO NPs shows lower hysteresis loss, less aging effect, and good sensitivity in the range of 9.8–16.5 MΩ/%RH. The sensitivity of the sensing materials increased with increasing Al-doping concentration, which is very useful for humidity sensors.

The effects of Fe/Al co-modified Ni-rich Li[Ni1-x-yCoxMny]O2 for enhancing electrochemical performance

Various impurities such as Cu, Al, and Fe can be incorporated in the leachate of spent lithium-ion batteries (LIB) after a conventional acidic leaching process. Here, we synthesize Fe/Al co-modified Ni-rich Li[Ni1-x-yCoxMny]O2 (NCM) cathode materials via a coprecipitation reaction for Fe doping and the subsequent calcination process for additional Al doping. The purpose of this work is to seek a potential of utilizing the positive effects of impurity elements for improving the LIB performance of Ni-rich NCM. The physicochemical properties of cathode materials are compared by scanning electron microscopy, energy dispersive spectroscopy, inductively coupled plasma optical emission spectroscopy and X-ray diffraction analysis. Electrochemical analyses including galvanostatic intermittent titration technique, differential capacity curves from cycling data are systematically performed to assess the effects of the sequential doping processes. It is found that an Al doping content of 1% in Fe-doped NCM is optimal in terms of rate and cycle performances. This study proposes a rational design for upgrading the resynthesized Ni-rich NCM cathode materials from the leachate of spent LIBs.

Microstructure Engineering of Al Doped SrTiO3/TiO2 Heterostructure Nanorod Arrays Boosting Piezo‐Photocatalytic Performances

AbstractModulating the charge‐transfer pathway is of great significance for boosting the photocatalytic efficiency of the catalysts. Herein, well‐ordered Al doping SrTiO3/TiO2 heterojunction nanorod arrays (Al‐STO/TiO2 HNRAs) via a two‐step hydrothermal protocol for efficient piezo‐photocatalysis are reported. The piezoelectric field generated by the internal polarization of Al‐STO/TiO2 HNRAs can be tailored by Al doping content, which could help to modulate the migration and separation of charge carriers. The doping of Al also makes the charge lifetime from 1.14 ns increased to 1.76 ns. Under the co‐excitation of ultrasonic and ultraviolet irradiation, the oxidation rate constant of Al‐STO/TiO2 HNRAs can reach 0.037 min−1 for the degradation of Rhodamine B molecules, which was 3.42 times higher than that of the un‐doping sample. The piezo‐potential distribution and charge migration within Al‐STO/TiO2 HNRAs were explored by piezoelectric force microscopy and COMSOL simulation. This work provides a promising solution toward modulating charge carrier migration for boosting photocatalytic activities with the assistance of mechanic vibration.

Effects of electron doping on the d0 magnetism in N-implanted ZnO and ZnAlO films

In this paper, N ions are implanted into ZnO and ZnAlO films with different carrier concentrations prepared by radio frequency reactive magnetron sputtering on sapphire substrates. The structural, electrical, optical and magnetic properties of N-doped and (Al, N) co-doped ZnO films is investigated, and the particular emphasis is placed on the effects of carrier concentration on the defects induced magnetism in the films. Our results show that all the doped ZnO films are ferromagnetic at room temperature. A trace amount of additional Al doping has a significant effect on the improvement of ferromagnetic properties, and a maximum saturation magnetization of 73 emu/cm3 is obtained for (Al, N) co-doped ZnO films. The optical band gaps of ZnO films increase with the increasing Al doping content, which is owing to the combined effect of high carrier concentration and the Burstein Moss effect. The average transmittance of all ZnO films exceeds 80%. Our results confirm that appropriate electron doping can effectively enhance the magnetic moment in N implanted ZnO which may also apply to other ZnO systems with d0 magnetism.

White emitting 5ZnO-(5–2.5x)Ga2O3- 2.5xAl2O3–90SiO2 glass ceramic embedded with Mn doped Zn(Ga,Al)2O4 nanocrystals

Dual-emitting manganese ions singly doped 5ZnO-(5–2.5x)Ga 2 O 3 -2.5 xAl 2 O 3 –90SiO 2 glass-ceramic (GCs) samples, containing the alloyed Zn(Ga, Al) 2 O 4 nanocrystals with a size of about 5 nm, were successfully prepared by a sol-gel method under different heat treatment temperatures, demonstrating an excellent white light emission. We found that the formation of the ZnGa 2 O 4 nanocrystals began at 650 °C (absence of Al 2 O 3 , x = 0) while that of the ZnAl 2 O 4 crystals required a higher temperature of about 900 °C (presence of Al 2 O 3 , x = 2) in SiO 2 glasses. A nanostructured Zn(Ga, Al) 2 O 4 :Mn 2+ , Mn 4+ in the glass-ceramic was synthesized by Al 3+ replacing part of Ga 3+ . The doping of Al 3+ has effectively contributed to the existence of Mn 2+ , thus realizing the regulation of the valence state of manganese ions. The glass ceramic samples showed red emission arrived from the 2E g → 4A 2g transitions of Mn 4+ , green emission originated from the 4T 1 →6A 1 transition of Mn 2+ , and blue emission derived from the self-activation center of ZnGa 2 O 4 nanocrystalline. In particular, the 0.1%Mn doped the 5ZnO-(5–2.5x)Ga 2 O 3 -2.5xAl 2 O 3 –90SiO 2 glass-ceramic samples can provide white color emission depending on the Al doping concentration (x), x = 0.4–0.9 and the annealing temperature, 650–900 °C.

Structural, Morphological and Optical Properties of (Mn, Al) Co-Doped ZnO Thin Films Prepared by Sol-Gel Dip Coating Method

In this study, Aluminum (Al) and Manganese (Mn) co-doped ZnO thin films were successfully synthesized into glass substrates by the sol-gel dip-coating method with different Al concentrations (1%, 3%, and 5%). The structural, morphological, and optical properties of the obtained thin films were characterized by X-ray diffraction (XRD), Atomic force microscopy (AFM), and UV–VIS spectroscopy. XRD pattern revealed that the films have a polycrystalline hexagonal structure with a preferred orientation along (101) for undoped ZnO thin films, further the co-doped ZnO thin films show a shift in the preferred orientation to (002) direction without any Mn or Al related phases. The morphological analysis showed that the films have a uniform and dense ZnO grains, without any voids and cracks, and it was found that the surface roughness (RMS) increases from 8,27 to 14,43 nm when the Al doping concentration increased from 1% to 3%; however, when Al doping concentration is 5%, the RMS value decreased to 2,80 nm. From the optical analysis, the higher average transmittance was found to be corresponding to 5% Al doping concentration.

Effects of Al Doping Concentration and Top Electrode on the Ferroelectricity of Al-Doped Hfo2 Thin Films

Effects of Al Doping Concentration and Top Electrode on the Ferroelectricity of Al-Doped Hfo2 Thin Films

Al-doped SnO2 thin films: impacts of high temperature annealing on the structural, optical and electrical properties

Undoped Tin Oxide (SnO2) and 4, 8, 14 at.% Aluminum (Al) doped SnO2 thin films (hereafter Sn1-xO2:Alx) were fabricated by thermal vacuum evaporation and stacked layer method, respectively. Following this, a detailed investigation of the impacts of Al doping and annealing temperature on the structural, optical and electrical properties of the synthesized films were carried out. The XRD results show that the films possess tetragonal lattice structures and for both doped and undoped SnO2, the relative intensities of the major diffraction peaks increase with annealing temperature. The high temperature annealing improves the crystallinity and reduces the stacking faults of Sn1-xO2:Alx films. UV–Vis–NIR spectrophotometric studies revealed that Sn1-xO2:Alx films annealed at high temperature have good transmittance which can reach up to 87.84% in the visible region. The optical bandgap gradually decreases with higher annealing conditions and lies within the range of 3.36–3.86 eV. Other properties like penetration depth, Urbach energy, strength of electron–phonon interaction and photoluminescence spectra were also studied. Electrical characterization reveals that Al doping content reduces the carrier mobility and carrier concentration while annealing temperature enhances both of these. This can be attributed to the reduced grain boundary scattering and interatomic bonding at higher annealing temperatures and ionized impurities at higher Al concentration. High annealing suppresses the sheet resistance of all the Sn1-xO2:Alx films and the lowest sheet resistance (268.50 Ω/cm2) is observed at 550 °C annealing for the undoped SnO2 films.

Structure and photocatalytic properties of the composite of Al-doped porous ZnO hollow micro-spheres and Ag nanoparticles

Al-doped porous ZnO hollow micro-spheres were prepared using a sol-gel method with a template of agglomerates of polystyrene (PS) nanospheres, and the composite of these ZnO hollow micro-spheres and Ag nanoparticles was prepared with further photo-deposition. The effects of Al doped on the structure and the optical properties of the specimen were investigated by means of x-ray diffractometer, SEM, TEM, an UV-Vis diffuse reflectance analyzer, and photoluminescence (PL) spectroscopy. Different doping concentrations of Al affect not only the existing form of Al atoms in the crystal but also the concentration of the intrinsic defects of ZnO, thus influencing the morphology of the hollow micro-spheres. The appropriate amount of Al doping provides the hollow spheres with a porous, loose morphology, showing the largest specific surface area, which significantly improves the absorbance of light and the number of reaction sites in photocatalysis. For the composite specimen, the introduction of Ag nanoparticles improves the absorbance of light in the visible region because of the surface plasmon resonance: in the PL measurements, because many electrons in the ZnO crystal flow to the surface of Ag nanoparticles due to the difference of energy levels between Ag and ZnO crystals, the intensity of the intrinsic and defect-related emissions of ZnO is reduced. The photocatalytic properties of the specimens were evaluated with the degradation of a methyl orange dye solution under simulated solar irradiation at room temperature. The specimen of porous ZnO hollow micro-spheres with 3% Al dopant concentration demonstrates excellent photocatalytic performance due to its large specific surface area. However, with the designed energy structure, the composite of porous ZnO hollow micro-spheres and Ag nanoparticles exhibits the best photocatalytic performance among the specimens tested by separating electrons and holes in the ZnO crystal.

Synthesis of Al doped CoP2/rGO composite and its high electrocatalytic activity for hydrogen evolution reaction

A series of Al-doped CoP2/rGO composites have been fabricated by in-situ precipitation and phosphorization protocol. The well-ordered arrangement and widely adjustable mole ratio of cations within Co–Al layered double hydroxide (CoAl-LDH) make it suitable as a precursor for phosphiding and generating evenly dispersed Al element within CoP2 structure. The effect of Al doping content on the catalytic activities for hydrogen evolution reaction thus could be discussed in detail. Electrocatalytic performance indicates that the doping of Al element within CoP2 structure could efficiently prevent the oxidation of phosphide on the surface, and thus resulting in the high electrocatalytic activity for hydrogen evolution reaction (HER). Among all the Al-doped CoP2/rGO materials, the composite with the Co/Al mole ratio of 2/1 presents the highest HER activity and stability whatever under acidic or basic reaction conditions, which could be comparable to the most reported HER electrocatalysts and even the commercial 20% Pt/C. At the current density of −10 ​mA ​cm−2 in 0.5 ​M ​H2SO4, the overpotential is only 59 ​mV with a Tafel slope of 73.2 ​mV dec−1. Interestingly, the Al content could be dissolved under basic media and resulting in a porous structured electrode. Only the overpotential of 60 ​mV is needed to get the current density of −10 ​mA ​cm−2 in 1 ​M KOH.

Surface microtexture and wettability analysis of quasi two-dimensional (Ti, Al)N thin films using fractal geometry

In this work, image and fractal analysis of Aluminium doped Titanium Nitride (Ti, Al)N thin films deposited by direct current (DC)/radio frequency (RF) magnetron sputtering is reported. Atomic force microscopy (AFM) data were studied to understand the impact of the Al doping concentration on the quasi two-dimensional surface morphology as well as surface texture parameters, evaluated by fractal and advanced fractal analysis. Conventional analysis shows a decrease in roughness of film surfaces along with peaks, valleys, and high surface uniformity. Furrows and contour lines generated from the topographical profile and grains were analyzed to gain a deep insight into the microtexture of the film surfaces. Power spectrum density approaches confirmed the self-affine behavior of the films with a semi-regular behavior of fractal dimension. The surface entropy did not show any significant difference indicating a globally uniform surface. Succolarity study showed a different behavior from that of furrow analysis. The effect on wettability of TiN films due to Al doping is studied based on the modified Wenzel equation and curvature pressure for fractal surfaces The hydrophobic behavior of (Ti, Al)N thin films exhibits a dependence on the fractal dimension, Hurst coefficient and fractal succolarity of the film surfaces. This study offers a deep understanding about the applicability of (Ti, Al)N thin films.

X-ray Nanoimaging of Crystal Defects in Single Grains of Solid-State Electrolyte Li7-3xAlxLa3Zr2O12.

All-solid-state lithium batteries promise significant improvements in energy density and safety over traditional liquid electrolyte batteries. The Al-doped Li7La3Zr2O12 (LLZO) solid-state electrolyte shows excellent potential given its high ionic conductivity and good thermal, chemical, and electrochemical stability. Nevertheless, further improvements on electrochemical and mechanical properties of LLZO call for an in-depth understanding of its local microstructure. Here, we employ Bragg coherent diffractive imaging to investigate the atomic displacements inside single grains of LLZO with various Al-doping concentrations, resulting in cubic, tetragonal, and cubic-tetragonal mixed structures. We observe coexisting domains of different crystallographic orientations in the tetragonal structure. We further show that Al doping leads to crystal defects such as dislocations and phase boundaries in the mixed- and cubic-phase grain. This study addresses the effect of Al doping on the nanoscale structure within individual grains of LLZO, which is informative for the future development of solid-state batteries.