Advanced Solar Cells Research Articles

Nonlinear guided waves in improved silicon solar cells using mathematical modeling and a bio-inspired artificial intelligence algorithm

Solar cells are crucial in aerospace industries as they provide a reliable and sustainable power source for spacecraft and satellites, enabling long-duration missions without relying on conventional fuel. This study investigates the propagation of nonlinear guided waves in improved silicon solar cells reinforced by graphene platelet (GPL) nanocomposites. The microplate model of the solar cells is developed using the modified couple stress theory (MCST) to capture size-dependent effects, and the sinusoidal shear deformation theory (SSDT) is applied to account for realistic shear deformation behavior. Nonlinear governing equations describing the dynamic response of the system are derived using Hamilton's principle. The equations are then solved numerically using the Runge–Kutta method to analyze the phase velocity and wave characteristics under varying parameters. The effects of GPL weight fraction, length scale parameter, and wavenumber on wave propagation are thoroughly examined. In this investigation, an intelligent model based on deep neural networks as an artificial intelligent algorithm combined with a genetic algorithm (DNN-GA) as a bio-inspired optimization approach, is employed to predict nonlinear phenomena in guided waves within the solar cell, using datasets generated from mathematical simulations. The results demonstrate that the inclusion of GPL nanocomposites enhances the mechanical properties of the silicon solar cells, leading to higher phase velocities and improved wave propagation efficiency. Additionally, the influence of the length scale parameter on phase velocity is found to be significant, particularly for low wavenumbers. This study provides valuable insights into the optimization of advanced nanocomposite-reinforced silicon solar cells for applications requiring efficient guided wave propagation. The findings offer a promising approach for the design and enhancement of next-generation solar cells.

Efficiency Improvement on Indium Tin Oxide Films for Dye-Sensitized Solar Cell Using Oxygen Plasma by Bias-Magnetron RF Sputtering Process

Dye-sensitized solar cells (DSSCs) are among the most widely studied thin-film solar cells because of their cost-effectiveness, low toxicity, and simple fabrication method. However, there is still much scope for replacing current DSSC materials due to their high cost, low volume, and lack of long-term stability. Accordingly, indium tin oxide (ITO)-nanorod films were fabricated by electron (E)-beam evaporation using the glancing angle deposition method in this study. Then, the ITO-nanorod was treated with oxygen plasma via a bias-magnetron radio-frequency (RF) sputtering process to improve the efficiency of DSSCs under a varying gas flow rate of 20, 40, 60, 80, and 100 sccm. The field emission scanning electron microscopy (FE-SEM) investigation of the ITO film structure revealed that the obtained nanorod structures have slightly different diameters. At the same time, an increase in the oxygen flow rate resulted in a rougher film surface structure. In this, the lower sheet resistance was received because of rougher morphology. When comparing the DSSCs efficiency (η) test results, we found that at a gas flow rate of 100 sccm, the highest efficiency value showed 9.5%. On the other hand, the ITO-nanorod without plasma treatment exhibited the lowest η. Hence, plasma technology can be practically applied to improve the η of DSSC devices. This study will be a prototype of a highly advanced solar cell manufacturing method for the solar cell industry.

Fabrication of solid-state plasmonic solar cell device using FTO|TiO2|Ag-nanoparticle assembly to generate hot electrons surpassing Schottky barrier

This work presents a detailed investigation into the fabrication and performance evaluation of plasmonic solar cells, where a thin film of silver nanoparticles is deposited onto a TiO₂ layer, with the silver film itself functioning as the active layer for light absorption and energy conversion. The study compares two deposition techniques—DC Magnetron Sputtering and Thermal Vapor Deposition (TVD)—revealing significant differences in the resulting device performance. The device fabricated using TVD demonstrated a significantly higher open circuit voltage of 440.3 mV and short circuit current density of 1.6 mA/cm² compared to the device fabricated via DC Magnetron Sputtering, which recorded an open circuit voltage of 56.92 mV and a short circuit current density of 0.03 mA/cm². These results indicate that TVD offers superior electron-hole separation, reduced recombination losses, and enhanced light absorption efficiency. The main contribution of this work lies in demonstrating that the TVD technique significantly improves the photovoltaic performance of plasmonic solar cells compared to DC Magnetron Sputtering. The study validates the hot-electron mechanism at the TiO2|Ag junction using Kelvin probe force microscopy, contributing valuable insights into the role of plasmonic effects in enhancing solar cell efficiency. Additionally, it underscores the potential of TVD for developing advanced solar cell technologies with higher energy conversion efficiency.

Synthesis, spectral analysis, and DFT studies of the novel pyrano[3,2-c] quinoline-based 1,3,4-thiadiazole for enhanced solar cell performance

In this study, we synthesized a novel compound, 3-(5-amino-1,3,4-thiadiazol-2-yl)-6-ethyl-4-hydroxy-2H-pyrano[3,2-c]quinoline-2,5(6H)-dione (ATEHPQ), through a condensation reaction between 6-ethyl-4-hydroxy-2,5-dioxo-5,6-dihydro-2H-pyrano [3,2-c]quinoline-3-carboxaldehyde and thiosemicarbazide, followed by oxidative cyclization. We characterized ATEHPQ using elemental analysis, IR, 1H and 13C NMR spectroscopy, and mass spectrometry. Density Functional Theory (DFT) calculations with the B3LYP/6–311++G(d,p) basis set were employed to optimize the molecular geometry and analyze global reactivity descriptors, including HOMO-LUMO energies. The Molecular Electrostatic Potential (MEP) map was used to identify reactive sites, and drug-likeness studies indicated potential pharmaceutical applications. Notably, ATEHPQ showed a higher first hyperpolarizability (βtot) compared to urea, suggesting its suitability for nonlinear optical applications. We also determined the Miller indices for ATEHPQ's preferred orientations using a specialized program. Williamson–Hall analysis revealed an average crystal size of 26.08 nm and a lattice strain of 6.3 × 10−3. The thin films exhibited three distinct absorption peaks at 2.8, 3.41, and 4.21 eV, with a direct energy gap of 2.43 eV. Dispersion parameters from the single oscillator model provided oscillator and dispersion energies of 3.12 eV and 14.21 eV, respectively, with a high-frequency dielectric constant of 4.71. The ATEHPQ thin films, when combined with n-Si, demonstrated significant improvements in photovoltaic performance: the open-circuit voltage (Voc) rose from 0.13 V to 0.521 V, the short-circuit current (Isc) increased from 0.253 mA to 2.94 mA, the fill factor (FF) improved from 0.238 to 0.33, and the efficiency (η) grew from 0.71 % to 4.64 % with increased illumination intensity. These results highlight the excellent photovoltaic and photodetection capabilities of ATEHPQ thin films, underscoring their potential for advanced optoelectronic and solar cell applications.

Analyzing the operational versatility of advanced IBC solar cells at different temperatures and also with variation in minority carrier lifetimes

Analyzing the operational versatility of advanced IBC solar cells at different temperatures and also with variation in minority carrier lifetimes

Systematic Modeling and Optimization for High‐Efficiency Interdigitated Back‐Contact Crystalline Silicon Solar Cells

This study utilizes Quokka3, an advanced solar cell simulation program, specifically tailored for interdigitated back‐contact (IBC) crystalline silicon (c‐Si) solar cells. Through meticulous Quokka3 simulations, the influence of several geometric and wafer characteristics of the solar cell backside on current–voltage (I–V) performance has been scientifically explored for IBC c‐Si solar cells. The investigation encompasses parameters such as wafer thickness, bulk lifetime, resistivity, emitter and back surface field area fraction, and front‐ and rear‐surface passivation. Optimal values for these parameters have been proposed to enhance the efficiency of IBC solar cells. These recommendations contain an emitter percentage of 70%, a wafer thickness ranging from 200 μm, a wafer resistivity of 1 Ω cm, and a wafer bulk lifetime of at least 10 ms. Moreover, under conditions where the cell is not short‐circuited, the potential for achieving higher cell efficiency, up to 26.64%, has been shown.

Numerical simulation of one-dimensional perovskite solar cell model

Perovskite solar cell (PSC) is one of the advanced third-generation solar cells that have rapid efficiencies but instability issues in terms of air, moisture, and UV light sensitivity becomes a barrier to commercialization. The instability issue is due to the charge accumulation at the interface of the PSC reducing its efficiency. This research focuses on the operation of PSCs through a one-dimensional (1D) drift-diffusion model for planar heterojunction PSCs. The model also accounts for the electric potential by Poisson’s equation, the ion generation, and the recombination rate. The method of lines technique is applied to solve the model for the perovskite layer numerically using the finite difference method which is then solved forward in time using the ‘ode15s’ solver in MATLAB. It is highlighted that the comparison with the experimental data from the reference shows good agreement. The effect of parameter thickness variation of the perovskite layer upon the efficiency of PSCs is analyzed. The result shows that the best efficiency obtained is 19.77% obtained at thickness 0.25 𝜇𝑚. The results may prove useful for a guideline of the cell thickness that predicts the perovskites cell performance.

Multifaceted analysis of K2InAgX6 (X = F, Cl, Br, I) for photovoltaic and thermoelectric applications

Halide double perovskites represent a diverse class of materials, with wide range of properties and functionalities which opens up opportunities for innovation in various technological applications. In this study, we present a broad theoretical exploration of K2InAg(F/Cl/Br/I)6, halide double perovskites (HDPs) using Density Functional Theory focusing on its prospect for advanced solar cell applications and thermoelectric device design. We can tailor the material's band gap and thermoelectric efficiency by changing the halide atoms (F/Cl/Br/I) of the halide double perovskite. The HDPs K2InAg(Cl/Br/I)6 exhibits a bandgap of 2.69, 1.82 and 0.66 eV. The mechanical properties calculation shows that the studied compound is mechanically stable showing anisotropic behavior and ductile in nature. Moreover, our calculations reveal a promising thermoelectric efficiency of 1.29, 1.45 and 2.19 at room temperature for K2InAg(Cl/Br/I)6, suggesting its viability for waste heat recovery and power generation. Furthermore, our analysis using SCAPS-1D also indicates a noteworthy solar power conversion efficiency of 21.88 % for K2InAgBr6. This study provides a bird's-eye view of the theoretical analysis of these halide double perovskite compounds.

Highly stable two-dimensional Janus Transition Metal Dichalcogenide-Based van der Waals heterostructures for exceptional solar cell performance

The development and utilization of solar energy are extremely important for alleviating energy and environmental problems. Herein, we comprehensively fabricated a series of two-dimensional Janus MXY-based van der Waals heterostructures (M=Mo, W; X, Y=S, Se, Te, and X≠Y) and thoroughly investigated their potential applications in solar cells using first-principles density functional theory. Further analysis identifies 20 heterostructures with power conversion efficiencies (PCEs) exceeding 20 %. Additionally, the impact of spin-orbit coupling (SOC) effects and intrinsic dipole correction on band structures and PCEs is examined. Particularly noteworthy are the WSSe/WSeTe SeSe BB and WSeTe/WSTe TeTe BB' vdWHs, exhibiting superior PCEs of 19.25 % (23.51 %) and 21.53 % (20.49 %) with (without) SOC effects and dipole correction, alongside minimal exciton binding energies (0.36 and 0.32 eV), excellent stability, and high light absorption coefficients (105∼106 cm−1). These outstanding values surpass most reported results. These findings underscore the potential of Janus transition metal dichalcogenide (TMD) vdWHs, particularly WSSe/WSeTe SeSe BB and WSeTe/WSTe TeTe BB' configurations, for advanced solar cell applications, offering valuable theoretical insights for future experimental investigations.

Solar Surface Defect Detection Based on Optimized YOLOv5

This study introduces an advanced Solar Cell Surface Defect Detection method utilizing an improved YOLO v5, FaserRCNN and YOLOV6 algorithms. Addressing the challenges posed by complex image backgrounds, variable defect morphology, and large-scale differences, our approach incorporates deformable convolution in the CSP module for adaptive learning scale and perceptual field size. The integration of the ECA-Net attention mechanism enhances feature extraction capabilities, while the addition of a tiny defect prediction head improves detection accuracy across different scales. Optimization techniques, including Mosaic and MixUp data augmentation, K-meansCC clustering anchor box algorithm, and the CIOU loss function, contribute to superior model performance. Experimental results demonstrate an impressive accuracy of 97.14% for YOLOv5, outperforming Faster R-CNN's 90.66%. Further extension studies on YOLOv6, YOLOv7, and YOLOv8 reveal YOLOv6 as the most effective, achieving a remarkable accuracy of 98.28%. This research establishes a robust solution for solar cell defect detection, showcasing the efficacy of our proposed algorithm for industrial applications.

Optical characterization of La2SrFe2TiO9 triple perovskite: Insights for advanced optoelectronic and solar cell applications

In this work, powdered La2SrFe2TiO9 triple perovskite that was produced by a solid-state reaction is analyzed to determine its optical characteristics. The transmittance and absorbance were measured using UV–visible spectroscopy at room temperature, which allowed for the discovery of promising optical properties. Based on the Tauc technique, the material has been shown to have a direct bandgap of 2.02 eV. Furthermore, the DASF method study has confirmed that the material is a direct bandgap. The absorption coefficient, Urbach energy, refractive index, optical conductivity, and dielectric function were included among the investigated optical properties. Calculations were performed for first- and third-order nonlinear susceptibilities and static and nonlinear refractive indices. These calculations brought to light the material's potential for use in advanced optoelectronic and solar cell applications. The remarkable optical properties of La2SrFe2TiO9, which include both linear and nonlinear characteristics, have made it an attractive candidate for use in advanced optoelectronic and solar cell applications.

Surfaces properties correlation with optical parameters of thickness dependent self-affine nanostructured SnS thin films: A study based on scaling law

Fractal concepts are employed to investigate the surface properties of tin sulfide (SnS) thin films, which are deposited on Fluorine-doped tin oxide (FTO)- coated glass substrates by the thermal evaporation (TE) technique. The surface topography of each deposited film is captured by AFM. The fractal dimensions of the AFM image were extracted through the Higuchi algorithm, and it is found that the thinner sample surface exhibits the maximum fractal dimension. The autocorrelation function and height-height correlation function are used to investigate the self-affinity behavior of surfaces. Dynamic surface roughening is characterized by different scaling exponents, such as the roughness exponent, the growth exponent, the dynamic scaling exponent, and the steepening exponent. It was observed that the values of average roughness, interface width, lateral correlation length, and mean square local slope are strongly influenced by film thickness. The self-affine fractal nature of thin film is estimated by the roughness exponent; however, island- or mound-type growth with quick surface roughening behavior is predicted by the growth exponent and the dynamic scaling exponent. Further, we have tried to correlate the optical properties such as transmission, reflection, and refractive index with the fractal dimension of SnS thin film. The increase in optical reflection with decreasing roughness indicates that absorber surfaces of the best crystalline films have the lowest reflectivity. The present results suggest that such surfaces, having a maximum fractal dimension and minimum optical reflectance, can be used as photon absorber layers for advanced solar cell devices.

First-principles calculations to investigate impact of doping by chalcogen elements on the electronic, structural, and optical properties of SrTiO3 compounds

Doping techniques are commonly utilized to effectively modify the physical properties of a desired compound. In this study, we employed the first-principles DFT calculations with a GGA + TB-mBJ approach as implemented by the Wien2k code, by investigating the effects of oxygen group element concentrations on the structural, electronic, and optical properties of the perovskite substance SrTiO3. We calculated the formation energies of each doped structure to assess the viability of synthesis. The band gap is equal to 1.355 eV, 0.653 eV, and 0.632 eV for 12.5 % S, Se, and Te doped SrTiO3, respectively. For the pure SrTiO3, the band gap is 2.584 eV. According to our findings, raising the chalcogen concentrations resulted in a considerable decrease in band gaps and an improvement in the ability to absorb light in the visible range (380–790 nm), exceeding 105 cm−1 for Te doped SrTiO3 (STO). At zero frequency, the dielectric constant was found (ε1 (0)) to be 4.432 for SrTiO3 pure and 6.332 for SrTiO3 doped with Te (12.5 %) in GGA-PBE and (ε1 (0)) = 4.432 and 12.217 for GGA + mBJ. The optical conductivity of SrTO3 doped with Te is determined to be 0.322 * 104 /Ω.cm, in comparison to a value of 0.377 * 104/Ω.cm for mBJ. Our research revealed that raising the chalcogen concentrations significantly enhanced the electrical conductivity, as predicted, along with improvements in optical conductivity and reflectivity. SrTiO3-xYx (Y = S, Se, or Te) represents one of our quaternary alloys, demonstrating substantial potential as a promising material for advanced photovoltaic and solar cell applications. Our findings revealed that the doped materials exhibited significantly high absorption rates and productivity. We also examined additional optical parameters, including optical band gap, Urbach energy, and optical conductivity.

Theoretical limiting‐efficiency assessment on advanced crystalline silicon solar cells with Auger ideality factor and wafer thickness modifications

AbstractWith the improvement of surface passivation, bulk recombination is becoming an indispensable and decisive factor to assess the theoretical limiting efficiency () of crystalline silicon (c‐Si) solar cells. In simultaneous consideration of surface and bulk recombination, a modified model of evaluation is developed. Surface recombination is directly depicted with contact selectivity while bulk recombination is revised on the aspects of ideality factor and wafer thickness. The of the double‐side silicon heterojunction (SHJ) and double‐side tunneling‐oxide passivating contact (TOPCon) solar cells are numerically simulated using the new model as 28.99% and 29.19%, respectively. However, the of single‐side TOPCon solar cells, the more practicable scenario, is only 27.79%. Besides, the of the double‐side SHJ solar cells would exceed the double‐side TOPCon solar cells if the recombination parameter of the non‐contacted area is higher than 0.6 fA/cm2, instead of perfect passivation. Our results are instructive in accurately assessing efficiency potential and accordingly optimizing design strategies of c‐Si solar cells.

Practical Jsc Limits for SHJ Devices: Insights From Modelling

Modern industrial silicon heterojunction (SHJ) solar cells are increasingly limited by the short-circuit current density (Jsc) and there is a strong interest in understanding how much novel approaches such as window layers, novel transparent conductive oxides (TCOs) and anti-reflection coatings (ARCs) could improve the Jsc of SHJ solar cells. In this work, the practical Jsc limits of SHJ solar cells are determined using a carefully calibrated ray-tracing model, validated using empirical data from in-house solar cells as well as recently published high-efficiency front-and-back contacted (FAB) SHJ solar cells. The model is then further refined to obtain a detailed Jsc loss breakdown of the latest record efficiency FAB SHJ solar cells, for which there are no published Jsc loss breakdowns. Notable advances made in these advanced solar cells with regards to window layers, TCOs and ARCs at the cell level are analysed. Based on the magnitude of impact on the solar cell Jsc, the most critical factors for achieving high-Jsc SHJ solar cells are identified and ranked. Allowing for additional improvements and combining the best approaches identified, an estimate of the practical upper limit of Jsc for FAB SHJ solar cells is determined to be 41.81 mA/cm2. This work serves as a useful reference for the current state of play for Jsc improvements in SHJ solar cells, and highlights practical pathways and issues for improving commercial SHJ solar cells.

Investigation of efficiency and temperature dependence in RbGeBr3-based perovskite solar cell structures

This study is centered on the exploration of the inorganic perovskite material RbGeBr3 as an absorbing layer in various configurations of perovskite solar cells (PSCs). The Poisson, continuity, and transport equations are solved using the finite element method for calculation. Systematic variations in the thicknesses of the RbGeBr3 absorber layer and the electron transfer layer are performed, with gold (Au) and silver (Ag) utilized as metal contacts for the electrodes. The study also delves into the impact of temperature variations on the efficacy of these structures. Among the tested configurations, the FTO/TiO2/RbGeBr3/P3HT/Au configuration emerges as the most efficient, achieving a power conversion efficiency of 11.89 %, with a short-circuit current of 14.47 mA/cm2 and an open-circuit voltage of 0.96 V. Additionally, two alternative structures, FTO/ITO/RbGeBr3/PEDOT:PSS/Au and FTO/ITO/RbGeBr3/PEDOT:PSS/Ag, are investigated, yielding comparable power conversion efficiencies of 11.374 %. The findings of this study can serve as valuable insights for the design of more advanced and efficient perovskite solar cells based on mineral perovskite layers.

Three-Dimensional Numerical Simulation of Rear Point Contact Crystalline Silicon Solar Cells

High efficiency monocrystalline solar cells commonly adopts rear point contacts of limited extension and passivation of the uncontacted bottom silicon surface region in order to improve performance. Modeling and analysis of advanced solar cells is strategic to optimize the device design and to minimize the losses. Several competing physical mechanisms must be accounted for in order to properly analyze rear point contact solar cells and a three-dimensional (3D) analysis of complex geometries is required. In this work we describe the issues related to the design of the mesh grid for the 3D numerical simulations, the definition of appropriate boundary conditions and the main adopted assumptions. Examples of numerical simulations are reported.

Exploring high-performance functionalized corannulene dimers: A DFT-based investigation for novel photovoltaic applications

Our current research is focused on designing new corannulene derivatives that exhibit significantly improved photovoltaic characteristics. These improvements comprise reduced excitation energy, a narrower optical band gap, enhanced light absorption capabilities, a high dipole moment, and reduced reorganization energies. Theoretical calculations of these parameters could pave the way for the creation of superior molecules for use in advanced solar cell technologies. In this work, we conducted a computational study (TD-DFT/CAM-B3LYP/6–311 +G) to examine the optical and electronic characteristics of a series of short-chain materials derived from a central core-based corannulene (A, B, C, D, and E-systems). The effect of various electron-donor side groups (such as: (1) 4-di(2-thienyl) thieno[3,4][1,2,5]-thiadiazole, (2) 2,2-Methyl Cyclopenta dithiophene, (3) Cyclopenta dithiophene, (4) 3,4-ethylene dioxythiophene, and (5) 4,6-di(2-thienyl)thieno[3,4-c][1,2,5]-thiadiazole (DTTTD)) on the electronic and photovoltaic properties of corannulene derivative as an electron-acceptor (such as radiation lifetime (τ), light harvesting efficiency (LHE), and maximum open circuit voltage (Voc)) was studied computationally. Also, the electron localization function (ELF) and the localized-orbital locator (LOL) analyses are used to discover the electronic localizations and delocalizations that occur after the addition of various ligands. The electronic and photovoltaic properties of each of the designed molecular structures were compared with P3HT as a reference. The obtained results showed that each of the designed molecular structures (especially the D-structure) is very efficient in the field of photovoltaics. Therefore, it seems that the D-structure can act (as a more suitable electron-donor than P3HT) together with phenyl-C61-butyric acid methyl ester (PC61BM) (as a good electron-acceptor) and improve the efficiency of solar cells.

P‐Type PbS Quantum Dot Solar Ink via Hydrogen‐Bonding Modulated Solvation for High‐Efficiency Photovoltaics

AbstractLigand modulation of the electrical properties and surface solvation plays a crucial role in the development of functionalized colloidal quantum dots (CQDs) inks for solution‐processed optoelectronics. While inorganic halide ionic ligands can facilitate the n‐type doping of PbS CQDs and establish an electrical double layer in polar solvents for stable high‐concentration n‐type CQD inks, a plausible solvation strategy is still lacking to stabilize p‐type PbS CQDs, thereby resulting in a tedious multi‐step deposition involving short‐chain dithiol molecular ligands for advanced heterojunction CQD solar cells. Here an effective hydrogen bonding solvation strategy is proposed using 2‐mercaptoethanol (ME) ligands to realize stable p‐type PbS CQD ink. This strategy enables DMSO to form a dense solvation layer surrounding the ME‐modified PbS CQDs. With this approach, the PbS‐ME CQD ink exhibits a photoluminescence quantum yield of 52.03%, which is the highest record for PbS CQD inks. Finally, one‐step deposition of a p‐type PbS‐ME layer for PbS CQD photovoltaics is successfully achieved with an impressive power conversion efficiency (PCE) of 10.91%. This p‐type solar ink facilitates the fabrication of ready‐to‐use devices, enabling extensive applications in large‐scale and flexible optoelectronic devices.

Beyond 22% power conversion efficiency in type-II MoSi2As4/MoGe2N4 photovoltaic vdW heterostructure.

Nowadays, substantial progress has been achieved in developing advanced solar cell materials, including high-performance two-dimensional (2D) materials like chalcogenides, perovskites, and oxides, along with their van der Waals (vdW) heterostructures. These efforts target enhanced photovoltaic efficiency, cost reduction, and reduced environmental impact. Despite this, challenges remain in improving light absorption, carrier mobility, and power conversion efficiency (PCE), highlighting the need for materials with enhanced optoelectronic properties. Here, we build a 2D MoSi2As4/MoGe2N4 vdW heterostructure with a 3.39 Å layer spacing, featuring an indirect band gap of 1.14 eV and type-II band alignment. Computational assessments demonstrate that photo-generated electrons efficiently transfer from the MoSi2As4 to the MoGe2N4 layer, while holes move in the opposite direction, reducing electron-hole recombination. The heterostructure exhibits excellent stability and optical absorption, with absorption coefficients up to 105 cm-1 across an extensive spectral range from visible to ultraviolet light. Furthermore, it also showcases an impressive electron mobility of 9065 cm2 V-1 s-1 and a minimal conduction band offset of 0.05 eV, both of which contribute to an enhanced PCE, reaching up to 22.09%. These results position the MoSi2As4/MoGe2N4 heterostructure as a promising candidate for solar cell applications due to its superior optoelectronic properties.