Driven by performance, 3D packaging with through silicon vias (TSVs) has become a reality for memory and advanced logic. New versions are emerging. High Bandwidth Memory (HBM) is one of the most important 3D IC developments in the last 10 years. In the last decade, stacked DRAM with through silicon vias has transitioned from a handful of research programs to rapidly increasing volumes. Tezzaron has been providing small quantities of 3D ICs for high-speed memory applications since 2005. Micron, Samsung, and SK Hynix began producing DRAM stacks with TSVs in late 2014 and early 2015. Micron began shipments of its Hybrid Memory Cube (HMC) in 2015. DRAMs and the logic controller were interconnected with TSVs. HMC was packaged in a BGA and tested before assembly on the board. The HMC has been used in Intel’s Knights Landing. The silicon-on-insulator (SOI) logic layer was fabricated by GLOBALFOUNDRIES (which purchased IBM’s fab) and the memory was fabricated by Micron. Micron used a thermo-compression bond (TCB) process with a non-conductive film (NCF) underfill for its die stacking in the HMC. Thermal issues were a challenge. Today Samsung and SKHynix are providing HBM stacks to the industry and Micron is expected to ship products next year. In February 2018, Samsung announced that its first “three-layer” stacked CMOS image sensors (CIS) were in mass production and found in the Galaxy S9/S9+. This follows Sony’s adoption of three-layer CIS technology one year earlier in February 2017. A third silicon layer in the form of DRAM is added to the pixel array and signal processing layers to significantly improve data readout speeds. These devices are manufactured with 3D IC technologies using TSVs, but Samsung and Sony use different design approaches. Technically speaking, Samsung’s solution is a two-layer image sensor with a stacked DRAM. Sony uses a true three-layer bonded approach. In its three-layer CIS technology, Sony places the DRAM between the pixel array die and the image processor, with all three layers interconnected using TSVs. The pixel array, DRAM, and logic wafers are manufactured with 90nm, 30nm, and 40nm processes, respectively. While logic and memory stacks have remained elusive, Intel and TSMC have introduced new packaging technology with active interposers that are considered 3D. Intel has introduced its Foveros 3D integration technology as a form of heterogeneous system integration. The technology uses a 3D face-to-face stacking process. In the process, logic die are bumped and mounted on an active interposer next to memory or die with other functions. The active interposer can contain active parts of the system, such as the platform controller hub (PCH) that manages I/O for the system. The active interposer is mounted on a package substrate with solder bumps. TSMC has introduced its SoIC with face-to-face stacking and wafer-on-wafer (WoW). These technologies are front-end packaging and use direct or fusion bonding. The SoIC is a wafer with logic, with our without TSVs.