Adjacent Quantum Wells Research Articles

Staggered-lineup heterojunctions as sources of tunable below-gap radiation: Operating principle and semiconductor selection

Heterojunctions in which both the conduction and the valence band edges of one semiconductor are shifted upward relative to those of the other, can exhibit adjacent dual quantum wells for electrons and holes on the two sides of the interface. Tunneling-assisted radiative recombination between the wells should be an efficient, bias-tunable source of radiation at below-gap quantum energies. Several semiconductor combinations that exhibit the proper lineup are available.