Addition Of Cl2 Research Articles

Activation mechanism of ruthenium etching by Cl-based radicals in O2/Cl2 plasma

The Ru etching mechanism was investigated using O2/Cl2 plasma with O, ClO, and Cl radicals. The etch rate drastically increased with a 10%–20% addition of Cl2 to O2 and was lower when using pure O2 or Cl2-rich gas in an ECR etcher. Experimental results indicate that chemical reactions involving Cl-based radicals contributed to the etching reactions. The chemical role of the Cl-based radicals was investigated by density functional theory simulations. The hypothesis tested was that O, ClO, and Cl adsorb on the RuO2 surface when it is irradiated with O-rich plasma. The reactivities of the topmost Ru atoms, where O, ClO, and Cl adsorbed, were compared in terms of the d-band structures. The ClO and Cl were found to enhance the reactivity of the Ru atoms more than O. These findings suggest that Cl-based radicals activate surface Ru atoms, resulting in the formation of volatile RuO4 or RuCl x O y .

A comparative study of chlorine and bromine species addition on the explosion limits of hydrogen-oxygen mixtures

In this work, we investigate the effects of chlorine (Cl) and bromine (Br) containing species additions on the pressure-temperature explosion limits of hydrogen-oxygen (H2-O2) mixtures computationally. It is shown that, with the addition of HCl, Cl2, HBr and Br2, the explosion limit evolves from being a non-monotonic Z-shaped curve to monotonic or maintains its non-monotonic response depending on the different types of additives. Specifically, with the addition of HCl to the mixtures, the limit always maintains the non-monotonic structure, while with the addition of around 18% of Cl2, it loses its Z-shaped structure. Compared with HCl and Cl2, more sensitive responses were found for HBr and Br2. With the addition of around 1% of HBr and 0.7% of Br2 to the H2-O2 mixtures, the limit's non-monotonic feature disappears rapidly, and becomes a monotonic curve. Further detailed kinetics analysis explains that after the addition of the halogen species, the radical competitions are different at the low- (P = 1.0 × 102 Pa), intermediate- (P = 1.0 × 104 Pa) and high- (P = 1.0 × 106 Pa) pressures respectively, resulting in the change of the dominant reactions. These findings enhance the understanding of Cl and Br containing species sensitization for the explosion limits of the H2-O2 mixtures and help to understand the kinetic interaction between the H2-O2 system and halogen.

Enhancement of catalytic activity by addition of chlorine in chemical vapor deposition growth of carbon nanotube forests

In carbon nanotube (CNT) growth, the role of catalytic nanoparticles involves complex processes of feedstock gas decomposition, carbon feedstock transport, and CNT crystal precipitation. We report on the improvement of the catalytic activity by chlorine addition during the CNT forest growth process. The addition of Cl2 enhanced the diffusion rate of carbon in the catalysts, and thus changed the rate-limiting step from iron diffusion in the catalyst to the feedstock gas decomposition on the catalyst surface, leading to a higher growth rate and longer catalyst lifetime. The addition of Cl2 directly affected numerous CNT structural parameters, including the CNT diameter, number of walls, and crystal quality. Furthermore, the Cl2 addition made the CNT forest super-aligned, and it enhanced the dry spin capability of the CNT forests, allowing CNT webs to be continuously drawn from the forests.

Removal of selected antibiotics and antiretroviral drugs during post‐treatment of municipal wastewater with UV, UV/chlorine and UV/hydrogen peroxide

AbstractActive pharmaceutical ingredients (APIs) are only partially removed by convectional wastewater treatment plants. This study aimed at assessing the post‐treatment degradation of selected antibiotics and antiretroviral drugs by direct UV photolysis and advanced oxidation processes (UV/H2O2 and UV/Cl2) using low‐pressure mercury lamp. The rate of degradation largely followed pseudo first‐order reaction kinetics. Amongst the six studied APIs, sulfamethoxazole, ciprofloxacin and zidovudine were readily degraded by more than 90% using direct UV photolysis. Addition of Cl2 and H2O2 to the UV process led to an increase in the rate of degradation for all the compounds. The effectiveness UV/Cl2 process was affected to a greater extent by the background effluent organic matter. This implies that higher electrical energy and oxidant would be required in the UV/Cl2 process relative to UV/H2O2 process. Generally, electrical energy required to remove 90% of the target compounds increased in the order UV/H2O2 < UV/Cl2 < UV processes.

Neutral, Cationic and Hydride-substituted Siloxygermylenes.

The introduction of the labile trimethylsiloxy group to GeII centers in the presence of an N-heterocyclic carbene donor is reported. The new complex IPr⋅GeCl(OSiMe3 ) (IPr=[(HCNDipp)2 C:]; Dipp=2,6-iPr2 C6 H3 ) was readily converted into the structurally unique GeII siloxy(hydrido)germylene IPr⋅GeH(OSiMe3 )⋅BH3 by treatment with lithium borohydride. Additionally, the reactive siloxygermylene cation [IPr⋅Ge(OSiMe3 )]+ was synthesized and clean oxidative addition of CH2 Cl2 was demonstrated. The two-coordinate [IPr⋅Ge(OSiMe3 )]+ cation also promoted the catalytic hydroborylation of sterically hindered ketones under mild conditions, with enhanced reactivity stemming from an open coordination site at Ge.

Inductive couple plasma reactive ion etching characteristics of TiO2 thin films

Changes in the inductively coupled plasma reactive ion etching characteristics of TiO2 thin films in response to the addition of HBr, Cl2 and C2F6 to Ar gas were investigated. As the HBr, Cl2 and C2F6 concentration increased, the etch rate increased; however, the etch profile degree of anisotropy followed a different trend. As HBr concentration increased, the greatest anisotropic etch profile was obtained at 100% HBr, while the greatest anisotropic etch profile was obtained at concentrations of 25% when etching was conducted under C2F6 and Cl2. Field emission scanning electron microscopy revealed that 25% C2F6 generated the greatest vertical etch profile; hence, etch parameters were varied at this concentration. The effects of rf power, dc-bias voltage and gas pressure on the etch rate and etch profile were also investigated. The etch rate and degree of anisotropy in the etch profile increased with increasing rf power and dc-bias voltage and decreasing gas pressure. X-ray photoelectron spectroscopy analysis of the films etched under a C2F6/Ar gas mixture revealed the existence of etch byproducts containing F (i.e. TiFx) over the film. CxFy compounds were not detected on the film surface, probably due to contamination with atmospheric carbon.

Formation of S–Cl Phosphorothioate Adduct Radicals in dsDNA S-Oligomers: Hole Transfer to Guanine vs Disulfide Anion Radical Formation

In phosphorothioate-containing dsDNA oligomers (S-oligomers), one of the two nonbridging oxygen atoms in the phosphate moiety of the sugar-phosphate backbone is replaced by sulfur. In this work, electron spin resonance (ESR) studies of one-electron oxidation of several S-oligomers by Cl2(•-) at low temperatures are performed. Electrophilic addition of Cl2(•-) to phosphorothioate with elimination of Cl(-) leads to the formation of a two-center three-electron σ(2)σ*(1)-bonded adduct radical (-P-S-̇Cl). In AT S-oligomers with multiple phosphorothioates, i.e., d[ATATAsTsAsT]2, -P-S-̇Cl reacts with a neighboring phosphorothioate to form the σ(2)σ*(1)-bonded disulfide anion radical ([-P-S-̇S-P-](-)). With AT S-oligomers with a single phosphorothioate, i.e., d[ATTTAsAAT]2, reduced levels of conversion of -P-S-̇Cl to [-P-S-̇S-P-](-) are found. For guanine-containing S-oligomers containing one phosphorothioate, -P-S-̇Cl results in one-electron oxidation of guanine base but not of A, C, or T, thereby leading to selective hole transfer to G. The redox potential of -P-S-̇Cl is thus higher than that of G but is lower than those of A, C, and T. Spectral assignments to -P-S-̇Cl and [-P-S-̇S-P-](-) are based on reaction of Cl2(•-) with the model compound diisopropyl phosphorothioate. The results found for d[TGCGsCsGCGCA]2 suggest that [-P-S-̇S-P-](-) undergoes electron transfer to the one-electron-oxidized G, healing the base but producing a cyclic disulfide-bonded backbone with a substantial bond strength (50 kcal/mol). Formation of -P-S-̇Cl and its conversion to [-P-S-̇S-P-](-) are found to be unaffected by O2, and this is supported by the theoretically calculated electron affinities and reduction potentials of [-P-S-S-P-] and O2.

Selective epitaxial growth of Si1−xGex films via the alternating gas supply of Si2H6, GeH4, and Cl2: Effects of Cl2 exposure

Si1−xGex films were epitaxially grown on Si(001) substrates at various ratios of flow rates of Si2H6 and GeH4. Si1−xGex films were also selectively grown on Si windows through modified alternating gas supply manner, repeating the unit cycle which consists of the Si1−xGex growth step and Cl2 exposure step. Injection of Cl2 enhanced the selectivity of the selective growth of Si1−xGex by etching away the spurious nuclei or deposits formed on oxide area. The separate addition of Cl2 resulted in decrease of the growth rate and Ge concentration of Si1−xGex film. Meanwhile, Ge concentration in Si1−xGex films was insignificantly affected by the variation of the flow rates and exposure durations of Cl2.

Cyclopropyl Iminium Activation: Reactivity Umpolung in Enantioselective Organocatalytic Reaction Design

Trick the iminium! The concept of cyclopropyl iminium activation for the organocatalytic desymmetrization of meso-cyclopropylcarbaldehydes is presented. A combination of nucleophilic and electrophilic chlorinating reagents leads to a formal addition of Cl2 across one of the cyclopropyl bonds giving access to 1,3-dichlorides in an enantioselective, catalytic fashion. Detailed facts of importance to specialist readers are published as ”Supporting Information”. Such documents are peer-reviewed, but not copy-edited or typeset. They are made available as submitted by the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.

Copper formal oxidation states above +1 in organometallic chemistry: the possibility of synthesizing cyclopentadienylcopper chlorides by oxidative addition reactions

Although organometallic compounds of Cu(I) have been known for some time, including cyclopentadienyl derivatives of the type CpCuL (Cp = η5-cyclopentadienyl ligand; L = phosphine or CO), organometallic compounds of copper in higher formal oxidation states are essentially unknown except for a few alkylcopper(III) and allylcopper(III) derivatives, only stable at very low temperatures. Theoretical studies on the cyclopentadienyl derivatives Cp2Cu2Cl n (n = 1, 2, 3) indicate a preference for structures with terminal Cp rings and bridging Cl atoms up to a maximum of two of the latter. However, Cp2Cu2Cl n (n = 1, 2, 3) structures with bridging Cp rings are found at only slightly higher energies. The lowest energy doublet mixed Cu(II/III) oxidation state Cp2Cu2Cl3 structure with a single bridging Cl atom can be formally derived from the lowest energy doublet Cu(I/II) mixed oxidation state Cp2Cu2Cl structure by oxidative addition of Cl2.

A Comparative Study of HBr-Ar and HBr-Cl2 Plasma Chemistries for Dry Etch Applications

The effects of HBr/Ar and HBr/Cl2 mixing ratios in the ranges of 0–100% Ar or Cl2 on plasma parameters, densities of active species influencing the dry etch mechanisms were analyzed at fixed total gas flow rate of 40 sccm, total gas pressure of 6 mTorr, input power of 700 W and bias power of 300 W. The investigation combined plasma diagnostics by Langmuir probes and the 0-dimensional plasma modeling. It was found that the dilution of HBr by Ar results in maximum effect on the ion energy flux with expected impact on the etch rate in the ion-flux-limited etch regime, while the addition of Cl2 influences mainly the relative fluxes of Br and Cl atoms on the etched surface with expected impact on the etch rate in the reaction-rate-limited etch regime.

Etching of high aspect ratio features in Si using SF6∕O2∕HBr and SF6∕O2∕Cl2 plasma

We have investigated the etching of high aspect ratio holes (∼4μm deep, ∼0.2μm diameter) in silicon using plasmas maintained in mixtures of SF6, O2, and HBr or Cl2 gases. The etching experiments were conducted in a low pressure (25mTorr), high density, inductively coupled plasma etching reactor with a planar coil. Visualization of the profiles with scanning electron microscopy is used in conjunction with plasma diagnostics such as optical emission and mass spectroscopies to understand the key factors that control the feature profile shape and etch rate. HBr addition to SF6∕O2 mixture reduces the F-to-O ratio, increases sidewall passivation and reduces mask undercut. Addition of Cl2 to SF6∕O2 discharge also decreases the F-to-O ratio, but Cl-enhanced F chemical etching of silicon significantly increases the mask undercut and lateral etching. In both SF6∕O2∕HBr and SF6∕O2∕Cl2 mixtures, reduction of O2 flow rate and subsequent increase of the halogen-to-O ratio eventually results in significant lateral etching because of the lack of oxygen required to form a siliconoxyhalide passivating film on the sidewalls.

Dry etching of (Pb,Sr)TiO3 thin films using inductively coupled plasma

In this study (Pb,Sr)TiO3 (PST) thin films were etched with inductively coupled Cl2∕(Cl2+Ar) plasmas. The etch characteristics of PST thin films as a function of Cl2∕(Cl2+Ar) gas mixtures were analyzed by using a quadrupole mass spectrometer. Systematic studies were carried out as a function of the etching parameters, including the radio frequency power and the working pressure. The maximum PST film etch rate is 56.2nm∕min, because a small addition of Cl2 to the Cl2∕Ar mixture increased the chemical effect. It was proposed that sputter etching is the dominant etching mechanism while the contribution of a chemical reaction is relatively low due to low volatility of the etching products.

First metallamacrocyclic complexes of Pt(iv) with 3,3,3′,3′-tetraalkyl-1,1′-phenylenedicarbonylbis(thioureas): synthesis by direct or electrolytic oxidative addition of I2, Br2 and Cl2

Elemental I(2) and Br(2) cleanly react with the 3:3 Pt(ii) metallamacrocycle of 3,3,3',3'-tetra(n-butyl)-1,1'-terephthaloylbis(thiourea)(cis-[Pt(II)(3)(L(p)(1)-S,O)(3)]3), in chloroform at room temperature, to yield oxidative addition products; (195)Pt NMR studies reveal that a stepwise oxidative addition readily occurs to each of the Pt(ii) centres in the metallamacrocycle to yield the mixed valence species cis-[Pt(II)(2)Pt(IV)I(2)(L(p)(1)-S,O)(3)] and cis-[Pt(II)Pt(IV)(2)I(4)(L(p)(1)-S,O)(3)], and the fully oxidised cis-[Pt(IV)(3)I(6)(L(p)(1)-S,O)(3)] in solution, depending on the mole ratio I(2):3. Similar results are obtained on treatment of solutions of 3 with elemental Br(2). Treatment of the corresponding 2:2 Pt(ii) complex of 3,3,3',3'-tetraethyl-1,1'-isophthaloylbis(thiourea)(cis-[Pt(II)(2)(L(m)(1)-S,O)(2)]4) with iodine, results in facile oxidative addition to yield cis-[Pt(IV)(2)(L(m)(1)-S,O)(2)I(4)], with a trans-Pt(iv)-iodo arrangement. Molecules in the crystal structure of 5 have their trans-Pt(iv)-iodo axes essentially aligned, with very close intermolecular iodide contacts (3.775(1)A), resulting in chains of weakly bound metallamacrocycles in the solid. An alternative electrolytic synthesis method, using a simple two-compartment glass cell containing 4 and a chosen halide salt in dichloromethane, led to the formation of cis-[Pt(IV)(2)(L(m)(1)-S,O)(2)Br(4)] 6 and cis-[Pt(IV)(2)(L(m)(1)-S,O)(2)Cl(4)] 7, completing characterization of a series of first-reported trans-Pt(iv)-X (X=I, Br, Cl) metallamacrocyclic complexes.

Dry etching characteristics of TiN film using Ar/CHF3, Ar/Cl2, and Ar/BCl3 gas chemistries in an inductively coupled plasma

Dry etching characteristics of TiN film have been studied in the case of using Ar/CHF3, Ar/Cl2, and Ar/BCl3 chemistries in an inductively coupled plasma. The TiN film was not etched at all without the addition of CHF3, BCl3, or Cl2 to the Ar gas flow. On the other hand, it was found that the TiN film was etched with one of the earlier additional gases. It was also found that a nontapered profile of etched TiN is obtained by Cl2 addition and a tapered profile by CHF3 or BCl3 addition. Moreover, a lower taper angle is obtained by increasing the amount of additional BCl3. X-ray photoelectron spectroscopy and Auger electron spectroscopy analyses for the etched samples of TiN show that TiF3 exists on the etched surface of TiN in the case of CHF3 addition and that BOxNy exists in the case of BCl3 addition. On the basis of these results, the effect of the gas addition to Ar on the characteristics of TiN reactive ion etching is considered as follows; under the Ar/CHF3 condition, although N in the TiN film is removed by evaporation in the form of NFx, Ti is fluorinated to form TiFx having low vapor pressure, which results in the low etching rate. Under the Ar/Cl2 condition, since NClx and TiClx have high vapor pressures, TiN is easily etched off, resulting in the highest etching rate with a nontapered profile. Under the Ar/BCl3 condition, although Cl plays the same role as it does under the Ar/Cl2 condition, B is likely to form a nonvolatile compound such as BOxNy, resulting in the deposition of the nonvolatile films on both the upper surface and sidewall of the TiN, which leads to a lower etching rate than that in the case of Cl2 addition and a lower taper angle of the etched profile.

Anthropogenic Sources of Chlorine and Ozone Formation in Urban Atmospheres

In this paper, we present ambient monitoring data from Houston, TX along with results from environmental chamber studies to suggest that molecular chlorine (Cl2), a photolytic source of chlorine atoms (Cl•), may contribute significantly to ozone (O3) formation in some urban environments. The ambient data were collected during an ozone episode in August 1993 that involved an alkane-rich hydrocarbon plume passing over anthropogenic sources of Cl2. Two unusual observations were made about the plume a few hours after it had passed over the Cl2 sources: (1) a rapid loss of alkanes and (2) a large increase in ozone concentration. Neither of these observations could be explained with models employing hydroxyl radical (OH•) chemistry (OH• are generally accepted to control oxidative chemistry in the daytime troposphere). Environmental chamber experiments were performed to determine whether the addition of Cl2 to a mixture of air, hydrocarbons, and nitrogen oxides (NOx) representative of conditions in the Houston ...

Platinum etching in Ar/Cl2 plasmas with a photoresist mask

Experimental studies of the etching of platinum have been performed with a photoresist mask in Ar/Cl2 plasmas. The etch rate of platinum decreased with addition of Cl2, showing no enhancement of etching by Cl2 addition. Moreover, the etch rate of platinum was found to be independent of substrate temperature in pure Cl2 plasmas. These results indicated that the platinum etching with chlorine-containing plasmas is proceeded mainly by physical sputtering due to incident ions, not by chemical reactions that produce volatile etch products. Thus, in platinum etching with Ar/Cl2 plasmas, the redeposition of nonvolatile etch products was observed to occur on sidewalls of the photoresist mask and platinum pattern; in this situation the etched profiles of platinum were tapered outwardly, because the redeposited films acted as etching masks for platinum. The thickness of deposited films on sidewalls increased with increasing Cl2 concentration, but they were found to be removed by wet treatment with HCl solutions. It was further demonstrated that by optimizing the Cl2 concentration, platinum could be etched without redeposition residues on sidewalls, although the etched profiles still remained outwardly tapered.

Etch Properties of Gallium Nitride Using Chemically Assisted Ion Beam Etching (CAIBE)

Dry etching properties of GaN were investigated using chemically assisted ion beam etching (CAIBE) with Cl2, BCl3, and HCl gases. The measured GaN etch rate with increasing tilt angle showed the maximum at a 30° tilt angle, similar to the effect of tilt angle on sputter yield. The GaN etch rate was the highest with Cl2 and the lowest with BCl3. In the case of GaN etching with BCl3, the GaN etch rate was even lower than that in the case of GaN etched with Ar ion source only. The lower etch rate appears to be related to the higher binding energy of BCl3 and high degree of condensation on the substrate maintained at 0°C. A highly anisotropic etch profile with smooth sidewalls could be obtained with Cl2. The addition of Cl2 to BCl3 did not improve GaN etch profile. The lowest roughness value of about 10 Å was obtained for the etching with Cl2. The GaN surface etched by Cl2 and BCl3 showed an N-rich surface possibly due to the removal of Ga preferentially by forming GaClx, and GaN surface etched by HCl showed near-stoichiometric surface possibly due to the removal of Ga by forming GaClx and N by forming NHx.

Reactive Ion Etching Mechanism of RuO2 Thin Films in Oxygen Plasma with the Addition of CF4, Cl2, and N2

In this study, we thoroughly investigated the reactive ion etching mechanism of RuO2 film in oxygen plasma with the addition of CF4, Cl2, and N2. The etch rate of RuO2 was examined as functions of flow rates of input gases, substrate temperature, DC bias applied to the substrate, and pressure. The concentrations of the etching species in the plasma were determined using optical emission spectroscopy (OES) and a quadrupole mass spectrometer (QMS). The etch products were determined with a QMS and the etched surface of RuO2 film was examined with X-ray photoelectron spectroscopy (XPS). RuO4 and RuO3, which are formed by the reactions between RuO2 film and oxygen radicals, are the only etch products regardless of the kind of additive gas. The additive gases (CF4, Cl2, and N2) are not directly involved in the chemical reaction with the RuO2 film, but they increase the concentration of oxygen radicals and accordingly, appreciably increase the etch rate of the RuO2 films. The etch rate is limited by the formation rate of the etch products, which is enhanced by the bombardment of energetic ions. Therefore, the etch rate depends not only on the concentration of oxygen radicals, but also on the flux and energy of the ions bombarding the film surface. In this study, for the first time, we introduced the use of the O2/N2 plasma system in RuO2 etching.

Synthesis and Characterization of the Bis-Cyclometalating Ligand 3,3‘,5,5‘-Tetrakis[(dimethylamino)methyl]biphenyl and Its Use in the Preparation of Bimetallic M(II), M(IV) (M = Pt, Pd), and Mixed-Valence Pt(II)−Pt(IV) Complexesviaa Dilithio-Derivative. Crystal Structure of the Pd Dimer [ClPd{2,6-(Me2NCH2)2C6H2}]2

The potentially bis-cyclometalating ligand 3,3‘,5,5‘-tetrakis[(dimethylamino)methyl]biphenyl, was prepared from 3,5-(Me2NCH2)2C6H3Br in a one-pot synthesis involving lithium−halogen exchange, transmetalation, and reductive-elimination reactions. This ligand undergoes selective dilithiation in the 4 and 4‘ positions of the biphenyl group to form [Li2{2,6-(Me2NCH2)2C6H2}2]n, which is a versatile precursor to bimetallic complexes via a double transmetalation reaction. The syntheses and characterization of the new homobinuclear Pt(II) and Pd(II) compounds, [(MeCN)Pt{2,6-(Me2NCH2)2C6H2}−]2(CF3SO3)2 and [ClPd{2,6-(Me2NCH2)2C6H2}−]2, is reported in addition to a novel synthetic route to the complex [ClPt{2,6-(Me2NCH2)2C6H2}−]2. The solid-state structure of Pd dimer was determined by single-crystal X-ray diffraction. Oxidative addition of Cl2 to the latter Pt compound produced the bis-platinum(IV) complex [Cl3Pt{2,6-(Me2NCH2)2C6H2}−]2, which reacts with 2 equiv of Ag(O3SCF3) in MeCN solution to form [(MeCN)Cl2Pt{2,6-(Me2NCH2)2C6H2}−]2(CF3SO3)2. This complex could also be obtained directly by reaction of the former PtII dimer with 2 equiv of Cl2IPh. 1H NMR spectroscopic studies show that mixtures of the PtII and PtIV dimers in acetonitrile solution are in equilibrium with a mixed-valence (PtII,PtIV) species [(MeCN)PtII{2,6-(Me2NCH2)2C6H2−C6H2(CH2NMe2)-2,6}PtIVCl2(NCMe)](CF3SO3)2, which, however, could not be isolated in pure form. The reaction of the PtII dimer with ≤1 equiv of Cl2IPh also gave a PtIV dimer, along with unreacted starting material and the mixed-valence complex. A reversible double C−C bond formation has been achieved by reaction of the PtII dimer with excess of methyl iodide. This procedure yields the bis(arenonium) species [IPtII{2,6-(Me2NCH2)2-1-MeC6H2}−]2(CF3SO3)2 in which both the Me groups derived from I−Me bond cleavage are bound to the Cipso of the aryl rings. The mono(arenonium) compound [IPtII{2,6-(Me2NCH2)2-1-MeC6H2-C6H2(CH2NMe2)2-2‘,6‘}PtII](CF3SO3)2 has been identified as an intermediate in this reaction by 1H NMR spectroscopy.