Active-matrix Organic Light-emitting Diode Display Research Articles

P‐15: A New Pixel Design for Amorphous‐Silicon Backplane of Active‐Matrix Organic Light‐Emitting Diode Displays

AbstractA new pixel design for amorphous‐silicon backplane of active‐matrix organic light‐emitting diode displays (AMOLEDs), is proposed. The circuit, composed of four TFTs and two capacitors, can compensate the threshold voltage shift of hydrogenated amorphous silicon thin‐film transistors (a‐Si:H TFTs) and the turn‐on voltage shift of OLEDs during operation.

α‐Ｓｉ ＴＦＴによるアクティブマトリクス有機ＬＥＤディスプレイを目指した画素回路の提案

A voltage controlled four thin-film transistor (TFT) pixel circuit for an amorphous-silicon (a-Si) active-matrix organic light-emitting diode (AM-OLED) display was designed, simulated, and evaluated. Because deviation and aging of the properties of the drive TFT was the cause of image sticking and degradation of the image quality, these had to be compensated for. We propose a new and suitable circuit for an a-Si AM-OLED display. This circuit was composed of four TFTs and one storage capacitor, and had four stages : Preparation, Programing threshold voltage (VT), Writing data, and Emission.

Active-matrix organic light-emitting diode display driver based on second-generation current conveyor

A new voltage-programmed driver circuit for active-matrix organic light-emitting diode display based on the second-generation current conveyor is described. Simulation results show that the circuit successfully compensates for instability and spatial non-uniformity of thin-film transistors.

32.3: Metal‐Induced Unilaterally Crystallized Polycrystalline Silicon Thin‐Film Transistor Technology for Active‐Matrix Organic Light‐Emitting Diode Displays with Reduced Susceptibility to Cross‐Talk

AbstractIn active‐matrix organic light‐emitting diode displays, a pixel in its non‐emitting state is determined to be more sensitive to transistor leakage than one in its emitting state. An improved device design is proposed and implemented, employing gate‐modulated lightly‐doped drain to suppress transistor leakage and to improve image quality.