This paper presents the results of a study on the energy spectra of activation of intrinsic defects in photosensitive films of solid solution CdSexS1-x depending on the conditions of their preparation and thermal treatment in different environments. This study investigates the photoconductivity spectra of thin films composed of the solid solution CdSexS1-x, focusing on the impact of preparation and thermal treatment conditions on the activation energy spectra of intrinsic defects. The films were synthesized using thermal evaporation in a vacuum and subjected to various thermal processes. The results indicate that the photoconductive properties are highly influenced by structural defects and point defects within the crystalline lattice, which create deep levels in the forbidden zone of the semiconductor. These findings advance the understanding of the physical processes in polycrystalline films and highlight the potential of CdSexS1-x films for developing light-emitting diodes and lasers in the infrared and visible spectra.
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