Practical applications require physical models for estimating the adhesion characteristics of interfaces between joint materials and the effect of crystal-structure defects in these materials on those characteristics [1]. In [2‐4], a thermodynamic model using the Gibbs equation was proposed for estimating the variation in the surface tension of interfaces with the content of vacancies, dislocations, and impurities. In this study, we developed a general model describing the effect of lattice defects on an important characteristic of the interlayer-connection strength, namely, the work w I of separation of two adjacent (crystalline) materials. The case where such defects are vacancies is analyzed in detail. It turns out that, as the concentration of vacancies increases, w I passes through a maximum (minimum) or decreases monotonically depending on the physical conditions and properties of materials. Generating a sufficient concentration of vacancies in one of the materials, it is possible to make w I vanish or even negative, which must result in the spontaneous separation of materials. These theoretical results for the strength properties of interfaces are important for designing new (in particular, layered) materials with an increased fracture strength and for estimating the durability of the joints under the action of mechanical loads and physicochemical fields. We consider a plane interface between two crystalline materials 1 and 2 with structural defects of types 1 and 2, respectively. Similar to [2‐4] (see also [5]), we consider the interface as a surface that can adsorb (desorb) defects from the bulk. Let these materials be subjected to a mechanical stress σ that is perpendicular to the interface and gradually increases the gap between them up to their complete separation. This stress σ = σ(δ) is a certain function of the displacement δ of the interface walls with respect to their position in the initial (unloaded) state. In this case, the work w I (per unit interface area) spent on the separation of materials is equal to
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