ABSTRACTIn this paper, a bandgap reference (BGR) circuit that combines the capacitively biased diode (CBD) structure and the proportional‐to‐absolute‐temperature (PTAT) voltage‐embedded amplifier has been proposed. In order to enhance compatibility with digital domain supply voltage and achieve low power consumption, the supply voltage of the circuit is set at , benefiting from the fact that both the CBD structure and the PTAT‐embedded amplifier can operate at sub‐1 V supply voltages. The circuit generates a complementary‐to‐absolute‐temperature (CTAT) voltage through the CBD structure. PTAT voltage is achieved by a PTAT‐embedded amplifier in a unity‐gain feedback configuration. The calibration of temperature coefficient (TC) is realized by applying a time‐domain trimming method through an on‐chip RC delay circuit. The reference clock frequency is a typical 32‐kHz crystal oscillator clock frequency, enabling high versatility of the circuit. Implemented in 0.13‐m CMOS, measurement results show that the proposed BGR achieves an average temperature coefficient of 28 ppm/°C over −40°C to 125°C, voltage accuracy of 0.25%, power supply rejection (PSR) of , with an active area of , and a power consumption of .
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