Acceptor Impurities Research Articles

Optimization of the solar cell based on cadmium telluride by adding the CdSeTe absorbing layer (heterostructure simulation)

Cadmium telluride solar cells are among the most common devices for photovoltaic applications. However, the energy conversion efficiency of these elements remains insufficiently high. Using the SCAPS programming environment, research and optimization of a classical thin-film solar cell based on CdTe were carried out. The structure of this element consisted of ITO as a transparent conductive contact, a cadmium sulfide (CdS) layer, and a cadmium telluride (CdTe) absorber layer with a metal contact. To optimize this structure in terms of power conversion efficiency, the influence of the thickness and concentration of acceptor impurities in the CdTe absorbing layer, as well as the influence of the thickness and concentration of donor impurities in the CdS buffer layer, were considered. It was established that the optimal thicknesses for the CdS buffer layer and absorption CdTe layers are 50 nm and 3000 nm, respectively. An additional CdSeTe layer between the CdS and CdTe layers has been proposed as one of the optimization options to improve the device efficiency. The main photovoltaic parameters of such a solar cell were analyzed depending on the thickness of the CdSeTe layer and its selenium content. It has been demonstrated that adding CdSeTe solid solution to the 1500 nm thick CdTe absorber layer increases the efficiency of the solar cell by 6.84 %. The main photovoltaic characteristics of CdS/CdTe and CdS/CdSeTe/CdTe solar cells were compared. The results showed that the simulated CdS/CdSeTe/CdTe structure provides better photoconversion efficiency in the AM1.5G light spectrum compared to the classical CdS/CdTe structure. Such elements can be used to form highly efficient solar panels

Defect-mediated Fermi level modulation boosting photo-activity of spatially-ordered S-scheme heterojunction

Spatially-ordered S-scheme photocatalysts are intriguing due to their enhanced light harvesting, spatially isolated redox sites, and strong redox abilities. Nonetheless, heightening the performance of S-scheme photocatalysts via controllable defect engineering is still challenging to now. In this work, multi-armed MoSe2/CdS S-scheme heterojunction with intimate Mo-S bond coupling and adjustable Se vacancies (VSe) and Mo5+ concentrations was constructed, which consisted of few- or even single-layered MoSe2 growing on the {11–20} facets of wurtzite CdS arms. The S-scheme charge transmission mechanism of MoSe2/CdS heterojunction was validated by density functional theory calculation combined with in situ photo-irradiated X-ray photoelectron spectroscopy, surface photovoltage, and radical measurements. Moreover, the Fermi level gap between CdS and MoSe2 was enlarged by regulating the contents of donor (VSe) and acceptor (Mo5+) impurities with synthesis temperature, which strengthens the built-in electric field and carriers transfer driving force of MoSe2/CdS composites, contributing to an outstanding H2 evolution activity of 52.62 mmol·g−1·h−1 (corresponding to an apparent quantum efficiency of 34.8 % at 400 nm) under visible-light irradiation (λ > 400 nm), 25.8 times that of Pt-loaded CdS counterpart and a substantial amount of reported CdS-containing photocatalysts. Our study results are anticipated to facilitate the rational design of advanced semiconductor nanostructures for efficient solar conversion and utilization.

Fermi energy modulation by tellurium doping of thermoelectric copper(I) iodide

Copper(I) iodide (CuI) is the leading inorganic p-type transparent conductor, attracting major attention for its promising optoelectronic properties and facile growth methods, although, commercial uptake is limited due to its as-of-yet insufficient electrical conductivity. Doping CuI with the chalcogens (O, S, Se, Te) is a viable route to tune its electrical conductivity for applications such as in thin film transistors, hole transport layers in solar cells, and transparent thermoelectric generators. The heaviest chalcogen element, Te, is yet to be explored in heavily intrinsically p-type doped CuI at non-alloying concentrations, the subject of the present work. We report the effects of tellurium at the boundary between the doping and alloying regime (up to a maximum of 2.4 % Te) in CuI thin films and investigation the variation in the thermoelectric properties and electronic band structure of the material. Ion implanting tellurium into CuI led to a progressive reduction in the films' work functions from 4.9 eV to 4.5 eV while the ionization potential remained unchanged, measured through photoemission spectrometry. This signified a modulation of the Fermi energy relative to the valence band edge, having a major effect on the materials' electrical conductivity and Seebeck coefficient, the former decreasing by 3 orders of magnitude, while the latter increased by 80 %. We conducted density functional theory (DFT) calculations to elucidate the effect of tellurium doping on the band structure of CuI. Tellurium doping corroborated the shift of Fermi energy, the incorporation of impurity acceptor states deeper into the band gap, in addition to disordering the valence band maximum. This work shows that, the Fermi energy in heavily p-type doped CuI can be moved away from the valence band through Te doping in addition to introducing band disorder, useful for controlling the hosts’ transport properties.

Hydrogen-like impurities in Si and Ge quantum dots in connection with 5 nm and beyond metal-oxide-semiconductor technologies

The industrial drive towards smaller semiconductor devices is at less than 10 nano-meters. In the next few years a three-dimensional quantum confined device structure is expected. We have studied the electronic structure of hydrogen-like donor impurities in Si and Ge quantum dots with varied shape of the confinement potential. These calculations are carried out within the Density-Functional-Effective-Mass Theory (DF-EMT). We have paid particular attention to the electron-electron interaction energy in a negative charge state of the donor impurity. The effect of electron correlation on the binding energy has been explored. In addition to these, we show that the second order correction to the ground state energy obtained through perturbative approach agrees well with the DF-EMT based numerical results, down to very small sizes of the quantum dots when the depth of the confinement is moderate or small. A non-monotonic shallow-deep transition of the binding energy of neutral and charged donors of hydrogen-like impurities is expected to occur with the reduction in the size of the quantum dot. A similar effect is expected for hydrogen-like acceptor impurities as well. Furthermore, the optical gap also shows non-monotonic shallow-deep behaviour with the quantum dot size reduction. Deepening of shallow donor or acceptor level implies that the carriers will freeze out at small sizes of the dot. We believe this is quite important in the context of metal-oxide-semiconductor (MOS) devices beyond 5 nm technologies, based on Si, Ge or a combination (SiGe). We also point out possible variabilities in the binding energy of donors and acceptors if there are variations in the size of host quantum dots in a large assembly of devices in future integrated circuits. This will lead to the variabilities in the characteristics from device to device. These results should be incorporated in the Technology Computer Aided Design (TCAD) simulation of less than or equal to 5 nm MOS devices.

Optical properties of HgCdTe epitaxial films doped with arsenic

Subject of study. Epitaxial films of Hg0.7Cd0.3Te solid solutions grown by molecular beam epitaxy and doped with arsenic to obtain hole-type conductivity in order to form p-n junctions for the production of infrared photodetector structures are studied. Aim of study. The types and characteristics of defects formed during arsenic doping of epitaxial films of Hg0.7Cd0.3Te solid solutions grown by molecular beam epitaxy and the effect of doping on the level of disorder in the solid solution are determined. Method. Ellipsometry, optical transmittance, photoluminescence, and photoreflectance are used. Main results. The initial material is shown to have high quality in terms of film bulk and surface quality, and the quality was found to improve after two-stage activation thermal annealing. Annealing has been shown to activate the arsenic with the formation of shallow (7–8 meV) acceptor levels. No side defects were found to occur as a result of the introduction of arsenic into the films during growth and annealing. Practical significance. This research demonstrated the effectiveness of doping epitaxial films of Hg0.7Cd0.3Te solid solutions with arsenic as an acceptor impurity in order to produce layers with hole conductivity during the production of photodiode structures.

Deep polaronic acceptors in LiGa5O8

Recently, LiGa5O8 was claimed to be a p-type dopable ultrawide-bandgap oxide, based on measurements of undoped material. Here, the electronic properties of potential acceptor dopant impurities in LiGa5O8 are calculated using hybrid density functional theory to evaluate their potential for causing p-type conductivity. As with the related compound LiGaO2, the heavy oxygen-derived valence bands lead to stable self-trapped holes in LiGa5O8. Acceptor defects and dopants also bind trapped holes (or small polarons), which lead to large acceptor ionization energies. The calculations here indicate that neither native acceptor defects (such as cation vacancies or antisites) nor impurity dopants can give rise to p-type conductivity in LiGa5O8. Optical transitions associated with these defects are also calculated, in order to allow for possible experimental verification of their behavior.

Dual configuration of shallow acceptor levels in 4H-SiC

Acceptor dopants in 4H-SiC exhibit energy levels that are located deeper in the band gap than the thermal energy at room temperature (RT), resulting in incomplete ionization at RT. Therefore, a comprehensive understanding of the defect energetics and how the impurities are introduced into the material is imperative. Herein, we study impurity related defect levels in 4H-SiC epitaxial layers (epi-layers) grown by chemical vapor deposition (CVD) under various conditions using minority carrier transient spectroscopy (MCTS). We find two trap levels assigned to boron impurities, B and D, which are introduced to varying degrees depending on the growth conditions. A second acceptor level that was labeled X in the literature and attributed to impurity related defects is also observed. Importantly, both the B and X levels exhibit fine structure revealed by MCTS measurements. We attribute the fine structure to acceptor impurities at hexagonal and pseudo-cubic lattice sites in 4H-SiC, and tentatively assign the X peak to Al based on experimental findings and density functional theory calculations.

Copper-Enriched Nanostructured Conductive Thermoelectric Copper(I) Iodide Films Obtained by Chemical Solution Deposition on Flexible Substrates

The objects of our research are flexible thin-film thermoelectric materials with nanostructured CuI layers 0.5–1.0 μm thick, fabricated by the chemical solution method Successive Ionic Layer Adsorption and Reaction (SILAR) on flexible polyethylene terephthalate and polyimide substrates. These cubic γ-CuI films differ from films obtained by other chemical solution methods, such as spin-coating, sputtering, and inject printing, in their low resistivity due to acceptor impurities of sulfur and oxygen introduced into CuI from aqueous precursor solutions during SILAR deposition. Energy barriers at the boundaries of 18–22 nm CuI nanograins and a large number of charge carriers inside the nanograins determine the transport properties in the temperature interval 295–340 K characterized by transitions from semiconductor to metallic behavior with increasing temperature, which are typical of nanostructured degenerate semiconductors. Due to the resistivity of about 0.8 mΩ· m at 310 K and the Seebeck coefficient 101 μV/K, the thermoelectric power factor of the CuI film 1.0 μm thick on the polyimide substrate is 12.3 μW/(m · K2), which corresponds to modern thin-film p-type thermoelectric materials. It confirms the suitability of CuI films obtained by the SILAR method for the fabrication of promising inexpensive non-toxic flexible thermoelectric materials.

Investigation of Si incorporation in (010) β-Ga2O3 films grown by plasma-assisted MBE using diluted disilane as Si source and suboxide Ga2O precursor

Traditionally, elemental Ga and Si have been used to supply Ga and Si, respectively, in molecular beam epitaxy (MBE) to grow Si-doped β-Ga2O3. In this work, we investigated the feasibility of enhancing the β-Ga2O3 growth rate by using a Ga-suboxide precursor in a plasma-assisted MBE. Additionally, Si doping of β-Ga2O3 using diluted disilane and Ga-suboxide as the Si and Ga precursors, respectively, was studied. The growth rate and film quality under different suboxide fluxes were inspected. We found that Si concentration has an inverse relationship with Ga2O flux due to atom competition. A room-temperature mobility of 115 cm2/V s was measured for an electron concentration of 1.2 × 1017 cm−3 on the sample grown using a Ga2O beam equivalent pressure of 1.1 × 10−7 Torr and a disilane flow rate of 0.006 sccm. Temperature-dependent Hall characterization was performed on this sample, revealing compensating acceptor and neutral impurity densities of 2.70 × 1015 and 8.23 × 1017 cm−3, respectively.

Modifying the electronic and magnetic properties of the scandium nitride semiconductor monolayer via vacancies and doping.

In this work, the effects of vacancies and doping on the electronic and magnetic properties of the stable scandium nitride (ScN) monolayer are investigated using first-principles calculations. The pristine monolayer is a two-dimensional (2D) indirect-gap semiconductor material with an energy gap of 1.59(2.84) eV as calculated using the GGA-PBE (HSE06) functional. The projected density of states, charge distribution, and electron localization function assert its ionic character generated by the charge transfer from the Sc atoms to the N atoms. The monolayer is magnetized by a single Sc vacancy with a total magnetic moment of 3.00μB, while a single N vacancy causes a weaker magnetization with a total magnetic moment of 0.52μB. In both cases, the magnetism originates mainly from the atoms closest to the defect site. Significant magnetization is also reached by doping with acceptor impurities. Specifically, a total magnetic moment of 2.00μB is obtained by doping with alkali metals (Li and Na) in the Sc sublattice and with B in the N sublattice. Doping with alkaline earth metals (Be and Mg) in the Sc sublattice and with C in the N sublattice induces a value of 1.00μB. In these cases, either magnetic semiconducting or half-metallicity characteristics arise in the ScN monolayer, making it a prospective 2D spintronic material. In contrast, no magnetism is induced by doping with donor impurities (O and F atoms) in the N sublattice. An O impurity metallizes the monolayer; meanwhile, F doping leads to a large band-gap reduction of the order of 82%, widening the working regime of the monolayer in optoelectronic devices. The results presented herein may introduce efficient methods to functionalize the ScN monolayer for optoelectronic and spintronic applications.

Doping of thermoelectric nanostructured solid solution Si1–xGex (x ~ 0,3) with donor and acceptor impurities during the synthesis process by spark plasma sintering

Doping of thermoelectric nanostructured solid solution Si1–xGex (x ~ 0,3) with donor and acceptor impurities during the synthesis process by spark plasma sintering

A p-type dopable ultrawide-bandgap oxide

A major shortcoming of ultrawide-bandgap (UWBG) semiconductors is unipolar doping, in which either n-type or p-type conductivity is typically possible, but not both within the same material. For UWBG oxides, the issue is usually the p-type conductivity, which is inhibited by a strong tendency to form self-trapped holes (small polarons) in the material. Recently, rutile germanium oxide (r-GeO2), with a band gap near 4.7 eV, was identified as a material that might break this paradigm. However, the predicted acceptor ionization energies are still relatively high (∼0.4 eV), limiting p-type conductivity. To assess whether r-GeO2 is an outlier due to its crystal structure, the properties of a set of rutile oxides are calculated and compared. Hybrid density functional calculations indicate that rutile TiO2 and SnO2 strongly trap holes at acceptor impurities, consistent with previous work. Self-trapped holes are found to be unstable in r-SiO2, a metastable polymorph that has a band gap near 8.5 eV. Group-III acceptor ionization energies are also found to be lowest among the rutile oxides and approach those of GaN. Acceptor impurities have sufficiently low formation energies to not be compensated by donors such as oxygen vacancies, at least under O-rich limit conditions. Based on the results, it appears that r-SiO2 has the potential to exhibit the most efficient p-type conductivity when compared to other UWBG oxides.

Tuning electron orbits and reducibility of spinel Co3O4 via defect engineering for enhanced acetone sensing

Defect engineering is an effective method to regulate the electronic structure and chemical properties of functional materials to improve the catalytic, electrochemical and gas-sensitive properties. However, it is still a major challenge to rationally design defects to boost the amounts and activity of reaction sites. Herein, a strategy is proposed for regulating the content of Co2+ (Oh, octahedron) and oxygen vacancies in spinel Co3O4 (Co-LDH-x, x refers to temperature) via calcination of Co layered double hydroxides (Co-LDH). Where Co2+ (Oh) serves electrons in eg orbitals with a high energy state, and rich oxygen vacancies can act as strong Lewis acid sites to generate Lewis acid-base effects with lone pair electrons. Co-LDH-700 shows excellent repeatability, stability and selectivity in acetone sensing, as well as a low detection limit of 80 ppb. The response of the sensor to 100 ppm acetone is 262.3 at 185 °C, with a rapid response rate (9.8 s). In addition, the formation of the acceptor impurity CoCo′ establishes an acceptor level above the top of the valence band, which is beneficial to the formation of thermal-induced electrons. H2-TPR confirms that the increase of Co2+ content improves the reducing capacity and catalytic effect of Co-LDH-700 in the sensing process. This work proposes a method to increase active sites by modulating Co2+ (Oh) eg orbital and rich oxygen vacancies, which provides a new idea for enhancing the activity of sensitive materials.

Research on vertical GaN devices based on gradient Al components

A groove-gate power device with a linearly gradient Al composition P-type AlGaN superjunction (abbreviated as LG-SJCAVET) is proposed, which uses polarized P-type AlGaN material instead of the traditional P-type GaN buried layer, avoiding the technical bottleneck of achieving high-aspect-ratio P-type doping in GaN materials. Simulation results show that, under the same structural parameters, the breakdown voltage of LG-SJCAVET reaches 2954V, and the on-resistance is 1.669 mΩ⋅cm2, which is due to no current flowing through the P-pillar, resulting in an increase in on-resistance, while affecting the DC characteristics of the device. The power figure of merit of the device is 5.27 GW/cm2, which is 67.11% and 27.38% higher than that of the traditional device and P-type GaN buried layer device, respectively. Therefore, the LG-SJCAVET device solves the problems of the high technical difficulty of the traditional P-type GaN buried layer process, difficulty in activating acceptor impurities, and poor thermal stability of the device, exhibiting superior breakdown voltage characteristics.

Phonon Characteristics of Gas-Source Molecular Beam Epitaxy-Grown InAs1−xNx/InP (001) with Identification of Si, Mg and C Impurities in InAs and InN

The lattice dynamical properties of dilute InAs1−xNx/InP (001) epilayers (0 ≤ x ≤ 0.03) grown by gas-source molecular beam epitaxy were carefully studied experimentally and theoretically. A high-resolution Brüker IFS 120 v/S spectrometer was employed to measure the room-temperature infrared reflectivity (IRR) spectra at near-normal incidence (θi = 0). The results in the frequency range of 180–500 cm−1 revealed accurate values of the characteristic In-As-like and In-N-like vibrational modes. For InAs1−xNx alloys, a classical “Drude–Lorentz” model was constructed to obtain the dielectric functions ε~ω in the far IR regions by incorporating InAs-like and InN-like transverse optical ωTO modes. Longitudinal optical ωLO phonons were achieved from the imaginary parts of the simulated dielectric loss functions. The theoretical results of IRR spectra for InAs1−xNx/InP (001) epilayers using a multi-layer optics methodology provided a very good agreement with the experimental data. At oblique incidence (θi ≠ 0), our study of s- and p-polarized reflectance (Rs,p(ω)) and transmission (Ts,p(ω)) spectra allowed the simultaneous perception of the ωTO and ωLO phonons of the InAs, InN and InAs0.97N0.03 layers. Based on the average t-matrix Green’s function theory, the results of local vibrational modes for light SiIn+ donors and SiAs−, CAs− acceptors in InAs were found in good agreement with the existing Raman scattering and infrared spectroscopy data. InInN, however, the method predicted an in-band mode for the MgIn− acceptor while projecting an impurity mode of the SiIn+ donor to appear just above the maximum ωmaxInN[≡595 cm−1] phonon frequency region. In InAs1−xNx/InP (001) epifilms, the comparison of reflectivity/transmission spectra with experiments and the predictions of impurity modes for isoelectronic donor and acceptor impurities in InAs and InN can be valuable for appraising the role of defects in other technologically important semiconductors.

Hybrid DFT of electronic and vibrational properties of irondoped Β-GA2O3 crystals

This paper presents the results of calculations of energy and electron-opticalproperties of iron-doped β-Ga2O3. By analyzing the arrangement of the electronic levels of theimpurity in the band gap for different charge states, it is shown that Fe is an acceptor impurity.Evaluation of both optical and thermodynamic transition levels indicates the deep nature of theiron acceptor impurity. In addition, iron can play the role of a donor at very low Fermi energies,but the probability of forming such a state is extremely low. We find that iron modifies Ramanscattering in an ambiguous manner. Due to the low effective atomic mass of the substitutediron atom, doping leads to a pronounced enhancement of phonon modes of vibrations in thehigh-frequency range (~ 600÷800 cm-1). The results obtained are in good agreement withexperimental observations, confirming the acceptor character of the iron impurity.

SЕNSORS BASED ON POLYCRYSTALLINE 3C-SiC: IMPACT OF BORON DOPING

As a chemically inert wide bandgap semiconductor material with high hardness and thermal conductivity, stable electrical characteristics, silicon carbide SiC is attractive for harsh environment electronics and sensors applications. The concept of harsh environment includes extremes of temperature, pressure, shock loads, radiation and chemical attacks those arise in aircraft and automotive engines, industrial gas turbines, during oil and gas exploration, etc.
 Lower growing temperatures of polycrystalline cubic silicon carbide, pc-3C-SiC, compared to monocrystalline allow to significantly reduce its cost and expand the possibilities of application. It follows from previous works that the thermal sensitivity of pc -3C-SiC can be significantly increased by doping with an acceptor impurity of boron during the growth of the material. The purpose of this work is to determine the properties of pc-3C-SiC doped with boron for the creation of photosensors and thermosensors, as well as thermal anemometers for extreme operating conditions.
 It is shown that pс-3C-SiC doping with a boron impurity in the growth process causes the formation of acceptor-type centers in the band gap and the appearance of features in the photosensitivity spectrum, which may be of practical interest for photovoltaics. For temperatures T > 150K, the conductivity of the doped sample increases almost exponentially with an activation energy of 0.28 eV, which is close to the activation energy of the photoconductivity of the same sample. This indicates that the ionization process of equilibrium and non-equilibrium charge carriers occurs from the same impurity centers. Boron doping causes the appearance of a broad photoconductivity band with a maximum at 1.7 eV in the impurity absorption region of pc-3C-SiC, similar to the situation in single crystal 3C-SiC.
 It was determined that the temperature coefficient of resistance for boron-doped pc-3C-SiC is 3.0´10-2 K-1 at T=300K and 1.1´10-2 K-1 at T=700K, which is almost an order of magnitude higher than for thermocouples, as well as for metals from which anemometer threads are made. The discussion of the obtained results allows to associate the value of the activation energy E=0.28 eV with the level of shallow boron in pc-3C-SiC and to assume this center is a point defect containing a boron atom that replaces a silicon atom in the 3C-SiC lattice, i.e. BSi.
 Photosensors that can be used as solar cells in the near-IR range of 0.6 - 1.8 μm, and as photocells in the visible range of 0.4 - 0.6 μm are proposed. The ability of pc-3C-SiC to work in extreme operating conditions, as well as the low cost of device manufacturing technology based on it, compared to other SiC polytypes, allow it to be considered a suitable material for creating temperature sensors, thermo-anemometers and photosensors, as well as detectors for monitoring nuclear facilities.

Investigation of Electrical Conductivity and EHD Flows of a Weakly Concentrated Transformer Oil Solution with an Electron Acceptor Impurity (Iodine)

The results of experimental and theoretical studies of the electrical conductivity of weakly concentrated solu-tions of liquid dielectrics (LD) with a chemically active impurity and associated electrohydrodinamic (EHD) flows are presented. The studies were carried out on the base of a multi-ion model of electrical conductivity, which makes it possible to adequately describe both the dissociation-recombination interactions of ions and the electrochemical injection of ions from the electrode surface. It is shown that recombination processes in the volume of the LD lead to a slow disappearance of the space charge with a characteristic time of hours and days, which does not allow to significantly reduce the distribu-tion of the space charge in the LD, which reduces the intensity of EHD flows. On the base of the obtained theo-retical and experimental data on electrical conductivity, numerical calculations were carried out which confirmed the results of observations on the development and structure of EHD flows and current characteristics.

Improved Simulated-Daylight Photodynamic Therapy and Possible Mechanism of Ag-Modified TiO2 on Melanoma.

Simulated-daylight photodynamic therapy (SD-PDT) may be an efficacious strategy for treating melanoma because it can overcome the severe stinging pain, erythema, and edema experienced during conventional PDT. However, the poor daylight response of existing common photosensitizers leads to unsatisfactory anti-tumor therapeutic effects and limits the development of daylight PDT. Hence, in this study, we utilized Ag nanoparticles to adjust the daylight response of TiO2, acquire efficient photochemical activity, and then enhance the anti-tumor therapeutic effect of SD-PDT on melanoma. The synthesized Ag-doped TiO2 showed an optimal enhanced effect compared to Ag-core TiO2. Doping Ag into TiO2 produced a new shallow acceptor impurity level in the energy band structure, which expanded optical absorption in the range of 400-800 nm, and finally improved the photodamage effect of TiO2 under SD irradiation. Plasmonic near-field distributions were enhanced due to the high refractive index of TiO2 at the Ag-TiO2 interface, and then the amount of light captured by TiO2 was increased to induce the enhanced SD-PDT effect of Ag-core TiO2. Hence, Ag could effectively improve the photochemical activity and SD-PDT effect of TiO2 through the change in the energy band structure. Generally, Ag-doped TiO2 is a promising photosensitizer agent for treating melanoma via SD-PDT.

Trap sensitivity of splitted source Z Shape horizontal pocket and hetero stack TFETs: a simulation study

This paper reports the trap sensitivity analysis of split source horizontal pocket Z shape tunnel field effect transistor (ZHP-TFET) and hetero stack TFET (HS-TFET) using technology computer aided design (TCAD) simulator. The sensitivity analysis elaborates the significance of ideal trap charges at the interface of oxide and semiconductor material for both acceptor and donor like traps. The trap sensitivity analysis is highlighted for variation in trap-concentrations, temperature, gate-metal work function, and peak energy position, for both the TFETs. Furthermore, we have implemented digital inverter on taking into account the interface trap charges effect. Result reveals that tarp sensitivity on various electrical parameter of HS-TFET is significantly higher than ZHP-TFET. It is seen that ZHP-TFET provides sensitivity around 11 and 33 under acceptor and donor impurities, respectively, whereas, for HS-TFET sensitivity is around 22 and 60 for acceptor and donor impurities, respectively, for wide variation in trap concentration. The voltage transfer characteristic and voltage gain of digital inverter are improved by observable amount in ZHP-TFET than HS-TFET for both donor and acceptor like trap. The noise margin of ZHP-TFET based resistive inverter comes 0.75 V, 0.73 V, and 0.77 V, while in case of HS-TFET these value noted as 0.32 V, 0.13 V and 0.37 V under consideration for no trap, acceptor trap, and donor trap, respectively.