The article reports for the first time some new results obtained for the memory device using As 10Ge 15Te 75 in the form of a compressed pellet. The measurements of the dependence on temperature, pressure and frequency of AC conductance and threshold voltage were made by subjecting the material to different DC voltages. The study reveals that (i) the AC conductance of the material increases with increasing temperature and pressure, (ii) the AC component of the total current decreases when the device is switched on by the application of DC bias across the device, (iii) the magnitude of frequency dispersion reduces considerably when the device is switched from the OFF to ON state, (iv) the value of threshold voltage, at given temperature, decreases when the device is subjected to a higher pressure, (v) the threshold voltage, at a given pressure decreases with increasing temperature, and (vi) the threshold voltage has a linear dependence on the product of temperature and pressure. To test the stability of the device-material, the article also reports measurements of AC conductivity and threshold voltage after subjecting the material to a rigorous strain under different stimuli, i.e. a temperature cycle (−15°C to +35°C), a pressure cycle (1 atmosphere to 10,000 Psi), and a DC voltage cycle (from −35 to +35 V). The results of measurements provide an evidence to the effect that even such low temperatures and pressure can induce structural changes in As 10Ge 15Te 75 resulting into its enhanced conductivity and a fall in the value of threshold voltage.