Light Absorption In Semiconductors Research Articles

Two-wavelength transmission: a rapid and precise method for measuring the light absorption in semiconductors

By means of two-wavelength transmission the reflection and scattering losses at surfaces are canceled out experimentally. A signal which is directly proportional to the light absorption is derived and measured in real time. The performance of the method for measuring the concentrations of EL2 in GaAs, of Fe in InP and of the thicknesses of InGaAsP/InP layers is demonstrated.

Multiphoton interband absorption of light in semiconductors in external parallel electric and magnetic fields

AbstractThe coefficient of the multiphoton interband absorption of light (MPA) in semiconductors in the presence of constant external, parallel electric and quantizing magnetic fields is calculated. It is shown that the MPA coefficient has an oscillatory character and the peaks correspond to the optical transitions on Landau levels. The following particular cases are considered: multiphoton electroabsorption (MPEA) and multiphoton magnetoabsorption (MPMA).

Note on multi-quantum intraband absorption of intense laser light in semiconductors

The electron-acoustic phonon scattering in the presence of intense laser light is considered. A kinetic equation for electrons is derived from which the absorption coefficient is obtained. It is shown that in the limit of ultrastrong fields the absorption coefficient is vanishing small as a result of the weakening of the electron-phonon interaction under intense fields.

Two‐photon interband absorption of light in semiconductors in external parallel electric and magnetic fields

AbstractThe constant of the two‐photon interband absorption of light (TPA) in a semiconductor placed in external, parallel quantizing electric and magnetic fields is calculated. It is shown that the TPA constant near each Landau level must have an oscillatory behaviour due to the presence of discrete Stark levels, that is, at high electric field strengths the “Stark ladder” must be observed. The following particular cases are considered: the one‐photon absorption (OPA), the two‐photon electroabsorption (TPEA), and the two‐photon magneto absorption (TPMA).

K.p perturbation theory for light absorption in semiconductors doped by 3d metals

A theory of light absorption in semiconductors doped by transition metal impurities is constructed. The absorption cross section near the edge of the optical band is calculated by means of k.p perturbation theory within the framework of the Kane model supplemented by the d impurity levels. Special attention is given to the problem of gauge invariance in k.p theory. It is shown that in the case of an impurity state with definite parity the Lucovsky formula is valid when modified by the more detailed account of the central cell corrections. In the substitutional positions without the inversion centre the impurity states possess no definite parity which allows the dipole transitions forbidden by the conventional crystal field theory and causes the linear Stark effect for the t2 levels.

Light Absorption in Semiconductors with Superlattice in Quantizing Magnetic Field

AbstractThe interand optical transition in semiconductors with superlattice (SL) in the presence of a quantized magnetic field are considered. Investigations are performed for two cases: H ∥ to the axis of SL, and H ⟂ to the axis of SL. In the first case the magnetic field affects the electron motion In the direction of the SL‐axis and the energy spectrum is determined in the effective‐mass approximation from the solution of Schrödinger equation which reduces to the Mathieu equation in the second case the energy spectrum is sufficiently anisotropic and has minibond character in the direction of the SL‐axis, but in the planes of layers an oscillatory structure. The selection rules for interband transitions are obtained for both cases. For H ∥ z the absorption coefficient has the form of a saw‐tooth curve; with increasing H the slope of the curve decreases, but the distance between peaks increases.

Effect of Spin‐Magnetophonon Interaction on the Light Absorption in Semiconductors

physica status solidi (b)Volume 12, Issue 2 p. K101-K104 Short Note Effect of Spin-Magnetophonon Interaction on the Light Absorption in Semiconductors S. I. Uritsky, S. I. Uritsky Ural State University, SverdlovskSearch for more papers by this authorG. V. Shuster, G. V. Shuster Ural State University, SverdlovskSearch for more papers by this author S. I. Uritsky, S. I. Uritsky Ural State University, SverdlovskSearch for more papers by this authorG. V. Shuster, G. V. Shuster Ural State University, SverdlovskSearch for more papers by this author First published: 1965 https://doi.org/10.1002/pssb.19650120243AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onFacebookTwitterLinked InRedditWechat Volume12, Issue21965Pages K101-K104 RelatedInformation