We observed abnormal threshold voltage (VT) shift in amorphous InGaZnO (a-IGZO) thin-film transistors under negative gate bias stress (NBS) after soaking them in H2O (pH 8). Before NBS, we soaked a-IGZO TFTs in H2O. During application of NBS, VT decreased by −0.43 V, then increased to nearly the initial value. We hypothesize that the electrical field that was applied during NBS caused some dissociation of H2O to hydrogen ions (H+) and hydroxide ions (OH−); the effects between H+ and OH− are responsible for the changes of ΔVT. The initial decrease was a result of trapping of H+ at the front channel; the subsequent increase was caused by neutralization of the H+ and the OH−; the a-IGZO was very thin, so the front channel and the back channel could affect each other; therefore, mitigation of energy band bending was possible. Recovery after NBS also occurred in two-phases: VT first increased then decreased to its initial value. During the recovery process, accumulation of an OH− layer generated electric field that attracted H+ so that the two species recombined. Increase in ΔVT occurred due to desorption of H+ from the front-channel interface, and decrease in ΔVT occurred by recombination.