The experimental investigation of the mechanical behavior at the interface between a few-layer Bi2Se3 nanoflake and flexible substrate is of great significance for the structural design and performance development of electronic devices based on topological insulator nanostructure. A quantitative micro-Raman study of the interfacial deformation transfer behavior was performed in this work. Combined with micro-Raman spectroscopy and in-situ loading, the Raman shift-strain coefficients of A1g phonon modes for Bi2Se3 nanoflakes with different longitudinal and transverse dimensions on the flexible substrate were calibrated, and the longitudinal dimensions were determined using a rapid and reliable optical identification method developed based on the optical contrast difference. In addition, an interfacial bonding phenomenological model was proposed to analyze the process of interfacial re-bonding after debonding with increasing strain and the interfacial bonding enhancement after cyclic loading. The influences of transverse dimension and thickness of Bi2Se3 nanoflakes on the interfacial bonding and deformation transfer were quantified by calibrating Raman shift-strain coefficients for multiple samples and were further attributed to the edge effect of the interfacial shear force and decline of interfacial deformation transfer with the layers, respectively.
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