8-hydroxyquinoline Aluminum Research Articles

Long-term thermal stability of NPB molecule under high-vacuum

Abstract During the deposition of organic light emitting diodes (OLEDs) using thermal evaporation, the purity of the deposition-source materials varies due to thermal stress, resulting in a reduced device stability. We developed an apparatus to evaluate the long-term thermal stability of deposition-source materials used in OLEDs, which is applicable even under high-vacuum conditions (below 10−4 Pa) where the materials under test run out very quickly when exposed to temperature greater than 300 °C, which is above their deposition temperature. The goal of this work is to understand how thermal stresses imposed on OLED materials for a certain duration affect the material purity and, ultimately, the device performance. We used this apparatus to expose N,N′-Di(1-naphthyl)-N,N′-diphenyl-(1,1′-biphenyl)-4,4′-diamine (NPB), a commonly used hole-transport material for OLEDs, to thermal stresses for various durations. After maintaining the samples at 330 °C (380 °C) for 25 h (50 h), we performed high-performance liquid chromatography to analyze the material purity. In addition, OLEDs with a simple bilayer structure (NPB/tris(8-hydroxyquinoline)aluminum, Alq3) were fabricated from the heated samples to investigate how material impurities that are induced by thermal stresses affect the device stability. The results show that slight changes in the NPB purity caused by prolonged exposure to high temperatures significantly influence the electrical and optical characteristics of OLEDs fabricated from the heated NPB.

Tris‐(8‐hydroxyquinoline) aluminium thin film as saturable absorber for passively Q‐switched erbium‐doped fibre laser

A passively Q-switched erbium-doped fibre laser was demonstrated by using tris-(8-hydroxyquinoline)aluminium (Alq3) organic material as a passive saturable absorber (SA). The SA was fabricated by a drop casting technique at room temperature and incorporated into a laser cavity by inserting it between two optical fibre ferrules. The Q-switched fibre laser operates at a centre wavelength of 1559 nm with a full-width half maximum of 1 nm. The generated pulse train is stable and has a pulse width decreased from 6.65 to 1.2 I¼s and the pulse repetition rate increased from 31.65 to 144.5 kHz as the pump power increased from 20 to 122 mW. The maximum pulse energy obtained is 63.89 nJ. This work indicates that the Alq3 as SA has a great potential to be utilised for pulsed laser generation. To the best of the authors' knowledge, this is the first time an organic material is utilised as a SA device for generating a stable Q-switched laser pulse. © 2019 Institution of Engineering and Technology. All rights reserved.

Propeller-Shaped Aluminum Complexes with an Azaperylene Core in the Ligands

Tris(8-hydroxyquinoline) aluminum(III) (Alq3) and its derivatives, characterized by a propeller-shaped three-dimensionally π-conjugated structure, have been intensively studied in the few past decades on account of their potential utility in optoelectronic applications. Reported herein are the synthesis and properties of π-extended Alq3 complexes that contain an azaperylene core in each ligand. Intramolecular palladium-catalyzed direct C–H arylations or base-promoted arylations were employed to prepare these large Alq3 analogues. A single-crystal X-ray diffraction analysis of one of the obtained Al complexes revealed a unique three-dimensional packing structure within the crystal, i.e., a honeycomb packing along the ab-plane and columnar π-stacks along the c-axis. An Alq3 analogue with azaperylene-dicarboximide ligands exhibited deep blue color in solution with an intense absorption band that extended to 780 nm (λmax = 634 nm; ε = 58,000 M−1 cm−1).

Achieving large and nonvolatile tunable magnetoresistance in organic spin valves using electronic phase separated manganites

Tailoring molecular spinterface between novel magnetic materials and organic semiconductors offers promise to achieve high spin injection efficiency. Yet it has been challenging to achieve simultaneously a high and nonvolatile control of magnetoresistance effect in organic spintronic devices. To date, the largest magnetoresistance (~300% at T = 10 K) has been reached in tris-(8-hydroxyquinoline) aluminum (Alq3)-based organic spin valves (OSVs) using La0.67Sr0.33MnO3 as a magnetic electrode. Here we demonstrate that one type of perovskite manganites, i.e., a (La2/3Pr1/3)5/8Ca3/8MnO3 thin film with pronounced electronic phase separation (EPS), can be used in Alq3-based OSVs to achieve a large magnetoresistance (MR) up to 440% at T = 10 K and a typical electrical Hanle effect as the Hallmark of the spin injection. The contactless magnetic field-controlled EPS enables us to achieve a nonvolatile tunable MR response persisting up to 120 K. Our study suggests a new route to design high performance multifunctional OSV devices using electronic phase separated manganites.

Characterization of aluminum 8-hydroxyquinoline microbelts and microdots, and photodiode applications

In the present study, we investigated the electrical, optical, and photoresponse characteristics of aluminum 8-hydroxyquinoline (Alq3)/silicon heterojunctions. The Alq3 thin film was successfully coated using the spin coating method on p-type Si. In order to determine the energy band gap diagram, the highest occupied molecular orbital-lowest unoccupied molecular orbital energy diagram was simulated with the density functional theory program. The quality of the coating and morphological properties of the Alq3 thin film were characterized using atomic force microscopy and scanning electron microscopy. The optical characteristics of the organic layer were investigated using ultraviolet–visible spectrophotometry. A reference diode was also fabricated with an Alq3/p-Si photodiode to obtain a better understanding of the electrical and optical properties of the device. The photodiode and diode parameters comprising the saturation current, ideality factor, barrier height, short circuit current, open circuit voltage, fill factor, and power conversion efficiency were obtained from the current–voltage measurements. These measurements were performed in the dark and under different illumination conditions at room temperature. The experimental results showed that the properties of the photodiode device were improved by using organic Alq3 microdots, and thus the device may have optoelectronic and photovoltaic applications.

High-energy Q-switched ytterbium-doped all-fiber laser with tris-(8-hydroxyquinoline) aluminum as saturable absorber

We have experimentally demonstrated a Q-switched fiber laser operating in the 1 µm region by using tris-(8-hydroxyquinoline) aluminum (Alq3) as a saturable absorber (SA). The Alq3 was fabricated through a drop-casting technique, where the material was embedded into a polyvinyl alcohol (PVA) film so that it can effectively incorporated into a laser cavity. The fiber laser has produced a high pulse energy of 0.8 µJ and peak power of 90 mW. When the laser cavity was reduced from 25 m to 5 m, the peak power increased and the pulse energy dropped to 237.62 mW and 451.5 nJ, respectively. Additionally, the minimum pulse width was reduced from 9 µs to 1.9 µs.

Large-area, liftoff nanoporous GaN distributed Bragg reflectors: Fabrication and application

Abstract A facile one-step electrochemical etching based on NaNO3 solution was developed for use in the chemical lift-off nanoporous- (NP-) GaN distributed Bragg reflectors (DBRs) over a macroscopic area (>1 cm2). The reflectivity of the lift-off DBR mirror is ~85%, which is far lower than that (~97%) of the NP-GaN DBR on the sapphire substrate. The decrease should be attributed to light scattering due to higher roughness in the lift-off mirror. To study its possible applications, tris(8-hydroxyquinoline) aluminum (III) (Alq3) thin film was grown on transferred NP-GaN DBR mirror onto silicon substrate via a thermal evaporation deposition. Compared to the reference Alq3 thin film, the photoluminescence of the Alq3 thin film on the transferred mirror presents significant enhancement and slight blue-shift, which should be attributable to reflectivity enhancement by the DBR and inner channel surface in the DBR mirror, respectively.

Pure Red Iridium(III) Complexes Possessing Good Electron Mobility with 1,5-Naphthyridin-4-ol Derivatives for High-Performance OLEDs with an EQE over 31.

Three iridium(III) complexes (Ir(4tfmpq)2mND, Ir(4tfmpq)2mmND, and Ir(4tfmpq)2mpND) with the 4-(4-(trifluoromethyl)phenyl)quinazoline (4tfmpq) main ligand and 1,5-naphthyridin-4-ol derivatives (mND: 8-methyl-1,5-naphthyridin-4-ol, mmND: 2,8-dimethyl-1,5-naphthyridin-4-ol, mpND: 8-methyl-2-phenyl-1,5-naphthyridin-4-ol) as ancillary ligands were studied. The complexes (Ir(4tfmpq)2mND, Ir(4tfmpq)2mmND, and Ir(4tfmpq)2mpND) emit pure red emissions of 626-630 nm with high photoluminescence quantum yields of 85.2-93.4% in CH2Cl2 and better electron mobilities than that of tri(8-hydroxyquinoline)aluminum. By employing three pure red emitters, all the phosphorescent organic light-emitting diodes exhibited superior performances with a maximum external quantum efficiency of 31.48% and the efficiency roll-off is very mild, which are among the best results ever reported for pure red organic light-emitting diodes using Ir(III) complexes. In addition, CIE( x, y) coordinates of (0.670, 0.327) are also close to the standard red emission required by the National Television System Committee.

EFFECT OF LOW-TEMPERATURE ANNEALING ON STRUCTURE AND OPTICAL PROPERTIES OF AMORPHOUS TRIS(8-HYDROXYQUINOLINE) ALUMINUM FILMS

Needle-shaped nanostructured tris(8-hydroxyquinoline) aluminum nanowires (Alq3) have been obtained by annealing Alq3 amorphous films at 150∘C which is lower than the glass transition temperature of Alq3 (172∘C). The growth of Alq3 nanowires is attributed to the migration and stacking of Alq3 molecules which acquire thermal energy from the annealing process. X-ray diffraction analysis and scanning electronic microscopy spectra show that the Alq3 nanowires are composed of the well-known [Formula: see text]-phase Alq3. The intensity of the photoluminescence spectra firstly increases and then decreases as the annealing time increases, along with a spectral blue shift. The optical transmittance spectra of the annealed Alq3 films show a smaller average absorption in the visible range and a wider optical bandgap compared with that of the amorphous films, as a result of the decrease of [Formula: see text] overlapping in the Alq3 molecules.

Analysis of OLED Fine Metal Mask Cleaning Process Using a Microstructure

In the manufacture of flat panel displays for television screens, cell phone displays, computer monitors, and so on, organic electroluminescent displays (OLEDs) have attracted attention due to their large angle visibility, high brightness, wide range of working temperature, fast response time, high contrast and vivid color compared with traditional flat panel displays such as liquid crystal displays. A typical OLED display structure consists of multi-organic layers such as an electron injection layer, an electron transport layer, a hole transport layer, and a hole injection layer which are sandwiched between a transparent indium-tin-oxide anode and a reflective metallic cathode. To form pixels emitting red(R), green(G) and blue(B) colors, pixels patterns are selectively deposited onto a thin film transistor (TFT) backplane panel with pixel bank array by evaporation of organic light emitting materials through a fine metal shadow mask (FMM) with tiny pixel-shaped apertures after highly precise alignment of the FMM to the TFT backplane. The FMM is typically fabricated by laser welding of a thin metal sheet onto a stainless steel frame. The thin metal sheet includes tiny openings formed by electroforming or micro photo etching of stainless steel or Invar (64% Fe-36% Ni alloy). When an FMM is used repeatedly during the continuous manufacturing of a full color OLED, evaporated organic materials accumulate on the surface and interface of the FMM as well as inside the gap between the metal sheet and the stainless steel frame. The long time usage of the FMM causes the blocking of the tiny apertures and the distortion of the FMM, and eventually, the organic material cannot be accurately patterned to form an organic light emitting layer. Therefore, the FMM should be regularly cleaned to avoid patterning error caused by the accumulated materials, however, cleaning can lead to the damage of the FMM. To find suitable cleaning conditions for minimizing FMM damage, it is important to analyze the efficiency of the FMM cleaning process. In general, the residual contaminant on the surface of an FMM can be analyzed by traditional analytical techniques such as VPD/ICP-MS, TXRF, XRF, AES, XPS and SIMS which are used to detect ionic and organic contamination on the wafer surfaces. The particle contamination on the surface can also be measured by light-scattering-based surface scanners used for measuring particle in the efficiency evaluation of wafer cleaning systems. However, it is impossible to investigate the residual contaminant inside the gap between the welded thin metal sheet and the frame because the metal sheet is opaque and the separation of the welded metal sheet is impossible until the last stage of FMM recycling. Our study was aimed to find a unique method to analyze the residual contaminants inside the gap as well as on the surface of an FMM. Instead of an FMM, we developed a FMM-mimic microstructure that can be used for the evaluation of cleaning efficiency after FMM cleaning process. A 1.4 mm-thick Tris-(8-hydroxyquinoline) aluminum (Alq3) film was deposited on the FMM-mimic microstructure as a contaminant by vacuum thermal evaporation. We analyzed the residual contaminants inside the gap using an optical and fluorescence microscope after the Alq3-deposited FMM-mimic microstructure was cleaned by N-methly-2-pyrrolidone. Funding This study was supported by Grant from the Ministry of Trade, industry & Energy (MOTIE, Korea) under Industrial Technology Innovation Program. No. 10063277, "Development of pattern deposition system based on roll to roll processing under low temperature and atmospheric pressure condition for smart thin film device fabrication."

Efficient Organic Light Emitting Diodes Using Solution-Processed Alkali Metal Carbonate Doped ZnO as Electron Injection Layer.

In this study, we demonstrate highly efficient, inverted organic light-emitting diodes (IOLEDs) using solution-processed alkali metal carbonate doped ZnO as an electron injection layer (EIL) and tris-(8-hydroxyquinoline) aluminum (Alq3) as an emitter layer. In order to enhance the electron injection efficiency of the IOLEDs, the ZnO EIL layers were modified by doping various alkali metal carbonate materials, including Li2CO3, Na2CO3, K2CO3, and Cs2CO3, using the low-temperature wet-chemical method. Compared to the control neat ZnO EIL-based IOLEDs, the alkali metal carbonate doped ZnO EIL-based IOLEDs possess obviously improved device performance. An optimal current efficiency of 6.04 cd A−1 were realized from the K2CO3 doped ZnO EIL based IOLED, which is 54% improved compared to that of the neat ZnO EIL based device. The enhancement is ascribed to the increased electron mobility and reduced barrier height for more efficient electron injection. Our results indicate that alkali metal carbonate doped ZnO has promising potential for application in highly efficient solution-processed OLEDs.

Enhancement in electron transport and exciton confinement in OLEDs: role of n-type doping and electron blocking layers

Doped transport layers are essential for achieving high efficiency in organic light emitting diodes (OLEDs). We have studied the effect of doping the electron transport layer (ETL), tris-(8-hydroxyquinoline) aluminum (Alq3) with different percentages of lithium fluoride (LiF). We have also studied the effect of different electron blocking layers (EBLs) such as Tris (4-carbazoyl-9-ylphenyl)amine (TCTA), N,N'-Bis (naphthalen-1-yl)-N,N'-bis(phenyl)-benzidine(NPB), and Di-[4-(N,N-di-p-tolyl-amino)-phenyl]cyclohexane (TAPC) in an Alq3:2,3,6,7-Tetrahydro-1,1,7,7,-tetramethyl-1H, 5H, 11H −10-(2-benzothiazolyl)quinolizino[9,9a, 1gh] coumarin (C545T) based organic light emitting diode (OLED) with optimized ETL doping. TCTA was found to effectively block the electrons and influence the recombination region in the process. At a brightness of 1000 cd/m2, an improvement of 27.8% was observed in external quantum efficiency (EQE) for the device with TCTA as the EBL and doped Alq3 as the ETL, compared to the one with just NPB as both EBL and HTL.

The origin of changes in electrical properties of organic films fabricated at various vacuum-deposition rates

We investigated the dependence of electrical properties on vacuum-deposition rate for films of N,N՛-diphenyl-N,N՛-bis(1-naphthyl)-1,1՛-biphenyl-4,4՛-diamine (α-NPD) and tris-(8-hydroxyquinoline)aluminium (Alq3), hole- and electron-transport materials widely used in organic light-emitting diodes (OLEDs), respectively. Hole-only devices (HODs) of α-NPD showed an increase of hole current when α-NPD layers were fabricated at high deposition rates, while the tendency was opposite for electron-only devices (EODs) of Alq3. We found that the increased hole current at high deposition rates for HODs was caused by a horizontal orientation of α-NPD molecules relative to a substrate plane which facilitates hole transport through the films. On the other hand, the decreased electron current at high deposition rates for EODs could be ascribed to the increased surface roughness of Alq3 films which decreases electron injection. Additionally, we demonstrated that long-term operational stability was enhanced for HODs fabricated at high deposition rates and operated at a constant current. Use of a high deposition rate means a reduction of deposition time which is helpful in OLED manufacturing. The improved device performance when high deposition rates were used and the detailed understanding of its origins as we demonstrated here would lead to fabrication of high-performance OLEDs at a low cost in the future.

Modelling and fitting the Polaron Pair Magnetoconductance model to obtain a realistic local hyperfine field in Tris-(8-hydroxyquinoline)aluminium based diodes

The Polaron Pair (PP) model has been successfully applied to magnetoconductance (MC) in organic semiconductor devices under ultra-small magnetic fields (USMFE). We report µT resolution MC measurements carried out with high sensitivity (better than 10−6) on the common organic semiconductor tris-(8-hydroxyquinoline)aluminium in the range ±500 µT displaying clear minima at ~±240 µT. Unlike traditional approaches, where device MC is simply evaluated using the PP model using nominal parameters for microscopic quantities such as the local hyperfine magnetic field, we have carried out actual fitting of the PP MC model to the experimentally obtained data. The fitting procedure yields physically realistic values for the polaron pair decay rate, local hyperfine magnetic field and triplet contribution to dissociation namely: k = 28.6 ± 9.7 MHz, {B}_{hf} = 0.34 ± 0.04 mT and {delta }_{TS} = 0.99 ± 0.01 respectively. The local hyperfine field obtained by fitting is in excellent agreement with independently calculated values for this system and is reproducible across different devices and independent of drive conditions. This demonstrates the applicability of the fitting approach to any organic USMFE MC data for obtaining microscopic parameter values.

Organic light-emitting devices based on 4,4’-bis(2,2’-diphenyl vinyl)-1,1’-biphenyl as a spacer between dual ultrathin layers

White organic light-emitting devices (WOLEDs) were fabricated by using a highly blue fluorescent dye of 4,4’-bis(2,2’-diphenyl vinyl)-1,1’-biphenyl (DPVBi) and a red fluorescent dye of 5H-benzo[ij] quinolizin-9-yl) ethenyl]-4H-pyran-4-ylidene] propane-dinitrile (DCM2), together with a green fluorescent dye of 10-(2-benzothiazolyl)-2,3,6,7-tetrahydro-1,1,7,7-tetramethyl-1H,5H,11H-(1)-benzopyroyran-o(6,7-8-i,j) quinolizin-11-one (C545T). The multilayer WOLEDs does not involve the doping process. The structure of the device is indium tin oxide (ITO)/4,4’,4”-tris{N,-(3-methylphenyl)-N-phenylamin}triphenylamine (m-MTDATA) (55 nm)/ N,N’-bis-(1-naphthyl)-N,N’-diphenyl-1,1’-biph-enyl-4,4’-diamine (NPB) (10 nm)/ DPVBi (8 nm)/ C545T (x nm)/ DPVBi (5 nm)/ DCM2 (y nm)/ tris- (8-hydroxyquinoline) aluminum (Alq3) (60nm)/ LiF (1 nm)/ Al, where the DPVBi is introduced as a spacer. By changing the thicknesses of dual ultrathin layers of C545T and DCM2, the WOLED is obtained. When x=y=0.05, the Commission Internationale de 1’Eclairage (CIE) coordinates of the device change from (0.262 6, 0.351 4) at 4 V to (0.214 7, 0.269 3) at 12 V that are well in the white region. Its maximum luminance is 41400 cd/m2 at 13 V, and the maximum current efficiency and the maximum power efficiency are 7.95 cd/A at 6 V and 5.37 lm/W at 5 V, respectively.

Selected Organometallic Compounds for Third Order Nonlinear Optical Application.

In this paper, we present the third harmonic generation response of Znq2 (Bis-(8-hydroxyquinolinato)zinc), Cuq2 (8-Hydroxyquinoline copper(II)), and Alq3 (Tris-(8-hydroxyquinoline)aluminum) organometallic compounds. An experiment was conducted for s and p polarizations of incident beam, using the Maker fringes technique. The third order nonlinear susceptibility χ(3) was estimated using the Kubodera and Kobayashi comparative model, on the grounds that presented compounds exhibit high linear absorption of the generated third harmonic wavelength (355 nm). These complexes were deposited as thin films using the physical vapor deposition (PVD) method. Investigated complexes vary in terms of the coordination center and number of quinoline ligands, which visibly influence their nonlinear response. The global hybrid B3LYP functional with the basis set 6-31G(d) was used in computing the linear and non-linear optical properties. The computed γtot value (8765.36 × 10−36 esu for Cuq2) is superior to that of methylene blue (γ = 32.00 × 10−36 esu). The calculated theoretical values were found to be in good agreement with the experimental results.

Effects of Active layer thickness on optical properties of polymer OLEDs

We have proposed and described precisely remarkable improvements of emitted power and corresponding optical parameters of Indium Tin Oxide (ITO)/Emissive Layer (EL)/Electron Transport Layer (ETL)/Aluminum based Organic Light Emitting Diode (OLED). Changing EL thickness we perceived the emitted power, although maximum emissive power (18.4 mW/ m2-nm -S) is obtained at approximate 490 nm wavelength for 60 nm EL, along with observed recombination rate, exciton density, electric field and carrier density. Bilayer OLED is simulated in which active layer is EL by using BAlq [Bis(2-methyl-8- quinolinolate)-4-(phenylphenolato) Aluminum] polymer and other is ETL by using Alq [tris(8-hydroxyquinoline) aluminum] polymer between two electrodes anode (ITO) and cathode (Al).

Origin of Anisotropic Molecular Packing in Vapor-Deposited Alq3 Glasses.

Anisotropic molecular packing is a key feature that makes glasses prepared by physical vapor deposition (PVD) unique materials, warranting a mechanistic understanding of how a PVD glass attains its structure. To this end, we use X-ray scattering and ellipsometry to characterize the structure of PVD glasses of tris(8-hydroxyquinoline) aluminum (Alq3), a molecule used in organic electronics, and compare our results to simulations of its supercooled liquid. X-ray scattering reveals a tendency for molecular layering in Alq3 glasses that depends upon the substrate temperature during deposition and the deposition rate. Simulations reveal that the Alq3 supercooled liquid, like liquid metals, exhibits surface layering. We propose that the layering in Alq3 glasses observed here as well as the previously reported bulk dipole orientation are inherited from the surface structure of the supercooled liquid. This work significantly advances our understanding of the mechanism governing the formation of anisotropic structure in PVD glasses.

Efficient Triplet-Triplet Annihilation Upconversion in an Electroluminescence Device with a Fluorescent Sensitizer and a Triplet-Diffusion Singlet-Blocking Layer.

Solid-state triplet-triplet annihilation upconversion (TTAUC) blue emission in an electroluminescence device (i.e., an organic light-emitting diode (OLED)) is demonstrated. A conventional green fluorophore, tris-(8-hydroxyquinoline)aluminum (Alq3 ), is employed as the sensitizer that generates 75% triplet under electrical pumping for the blue triplet-triplet annihilation emitter, 9,10-bis(2'-naphthyl) anthracene (ADN), with the heterojunction bilayer structure. The operation lifetime is elongated both for ADN blue (4.1x) and Alq3 green (34.8%) emission due to efficient use of excitons and separation of recombination and emission zone. To reduce the singlet quenching (SQ) of blue TTAUC signal by the Alq3 sensitizer with lower bandgap, 1-(2,5-dimethyl-4-(1-pyrenyl)phenyl)pyrene (DMPPP) is inserted between the Alq3 and ADN as a triplet-diffusion-and-singlet-blocking layer. DMPPP exhibits triplet energy close to Alq3 and higher than ADN, as well as higher singlet energy than both Alq3 and ADN. It allows triplet diffusion from Alq3 to ADN, but blocks the SQ of the blue TTAUC signal by Alq3 . 86.1% intrinsic efficiency of TTAUC is demonstrated in this trilayer (Alq3 /DMPPP/ADN) OLED.

An Investigation on the Pharmacological Profile of Titanium (IV) and Aluminum (III) 8-Hydroxyquinoline Derivatives Grafted on MCM-41 Mesoporous Silica

8-hydroxyquinoline and 5-chloro-8-hydroxyquinoline were treated with a titanium (IV) and Aluminum (III) alkoxide reagents to generate (Q)2(2-BuO) Al (Q = 8-hydroxyquinoline and 5-chloro-8-hydroxyquinoline) and (Q)2(O-iPr)2Ti (Q = 5-chloro-8-hydroxyquinoline) complexes. These active complexes underwent successive grafting on MCM-41 mesoporous silica in order to improve overall toxicity and stability of them. The prepared nanocomposites were characterized. Anti-bacterial activity of the compounds on Escherchia coli (ATCC 1330), Salmonella typhi (PTCC 1609) and Staphylococcus aureus subsp. Areas (PTCC 1113) were tested and the anti-fungal activity of them was determined using the agar well diffusion assay method on SCC (for yeasts) and Muller Hinton Agar medium (for filamentous fungi). The results showed that the anti-microbial (bacterium and fungi) effect of the Ti & Al complexes can be improved in the solid-state using appropriate chlorine substituent on the 8-hydroxyquinoline ligand and grafting to the mesoporous silica.