O3 Layer Research Articles

Contribution of vanadium particles to thermal movement of correlated two-dimensional pancake Abrikosov vortices in Bi-2223 superconducting system

This article breaks new ground in understanding of variation in the magnetic strength performance, flux pinning and energy dissipation mechanism of polycrystalline bulk Bi1.8Sr2.0Ca2.2Cu3.0Oy (Bi-2223) superconducting materials added with the different vanadium concentration level (0.0≤x≤0.30) under the magnetic field strengths applied up to 5T for the first time. We provide the sophisticated and phenomenological discussions on the magnetoresistivity measurement results in three main sections along the paper. All the findings show that the increase of both the vanadium concentration in the crystal structure and external magnetic field strength damages significantly the magnetic strength performance, vortex dynamics, flux pinning ability and vortex lattice elasticity of bulk Bi-2223 superconducting ceramics. The vanadium addition promotes thermally the movement of correlated two-dimensional (2D) pancake Abrikosov vortices between the in-plane Cu–O2 layers in the valance band, vortex lattice elasticity, vortex dynamics, distance for interlayer Josephson couplings and flux pinning centers and the theoretical computations confirm the remarkable degradation in the formation of super-electrons in the Bi-2223 crystal system. Thus, the vanadium addition is anticipated to be one of the best selectable materials to examine the differentiation in the thermal movement of correlated 2D Pancake Abrikosov vortices in the bulk Bi-2223 superconducting system.

Chiral Nanoparticles with Enhanced Thermal Stability of Chiral Structures through Alloying.

Metallic chiral nanoparticles (CNPs) promisingly function as asymmetric catalysts but lack an important study in thermal stability of optical activity that stems from metastable chiral lattices. In this work, annealing is applied to silver (Ag) CNPs, fabricated by glancing angle deposition (GLAD), and causes elimination of optical activity at 200 °C, mainly ascribed to chiral-to-achiral lattice transformation. The Ag CNPs are remarkedly enhanced in thermal stability through an alloying with aluminum (Al) via layer-by-layer GLAD to generate binary Ag0.5 Al0.5 CNPs composed of solid-state liquids, whose optical activity vanishes at 700 °C. Ease in the diffusion of Al atoms in the host Ag CNPs and thermal insulation from the Al2 O3 layers partially covering the binary CNPs effectively prohibit structural relaxation of the metastable chiral lattices, accounting for the significant enhancement in thermal stability of chiral lattices. This is a pioneering work to investigate the fundamental principles determining the thermal stability of metallic CNPs in terms of chiral structures and optical activity. It paves the way toward applying metallic CNPs to asymmetric catalysis at high temperature to accelerate an asymmetric synthesis of enantiomers with designable chirality, which is one of the most important topics in modern chemistry.

The <i>Fires, Asian, and Stratospheric Transport</i>–Las Vegas Ozone Study (<i>FAST</i>-LVOS)

Abstract. The Fires, Asian, and Stratospheric Transport–Las Vegas Ozone Study (FAST-LVOS) was conducted in May and June of 2017 to study the transport of ozone (O3) to Clark County, Nevada, a marginal non-attainment area in the southwestern United States (SWUS). This 6-week (20 May–30 June 2017) field campaign used lidar, ozonesonde, aircraft, and in situ measurements in conjunction with a variety of models to characterize the distribution of O3 and related species above southern Nevada and neighboring California and to probe the influence of stratospheric intrusions and wildfires as well as local, regional, and Asian pollution on surface O3 concentrations in the Las Vegas Valley (≈ 900 m above sea level, a.s.l.). In this paper, we describe the FAST-LVOS campaign and present case studies illustrating the influence of different transport processes on background O3 in Clark County and southern Nevada. The companion paper by Zhang et al. (2020) describes the use of the AM4 and GEOS-Chem global models to simulate the measurements and estimate the impacts of transported O3 on surface air quality across the greater southwestern US and Intermountain West. The FAST-LVOS measurements found elevated O3 layers above Las Vegas on more than 75 % (35 of 45) of the sample days and show that entrainment of these layers contributed to mean 8 h average regional background O3 concentrations of 50–55 parts per billion by volume (ppbv), or about 85–95 µg m−3. These high background concentrations constitute 70 %–80 % of the current US National Ambient Air Quality Standard (NAAQS) of 70 ppbv (≈ 120 µg m−3 at 900 m a.s.l.) for the daily maximum 8 h average (MDA8) and will make attainment of the more stringent standards of 60 or 65 ppbv currently being considered extremely difficult in the interior SWUS.

Existence of two-dimensional hole gas at the interface of Bi(Zn, Ti)O[formula omitted]/SrTiO[formula omitted] heterostructures: An ab-initio study

We present first-principles calculations for a system consisting of a varying number of layers of the ferroelectric semiconductor Bi(Zn, Ti)O3 (BZT) on top of SrTiO3 (STO) substrate. To begin with, we assume that a TiO2 layer in STO is connected to a BiO layer in BZT. We show that atomic relaxation has a significant effect on the electronic properties of the heterostructure. In the absence of relaxation, due to the large polarization in BZT, a two-dimensional electron gas is formed at the interface when one unit cell of BZT is placed on top of STO. When relaxation is taken into account, the polarization in BZT is reduced in value and reversed in direction; in this case the insulator-to-metal transition occurs when the number of BZT unit cells reaches four, and a two-dimensional hole gas is formed at the interface. We also consider the case where an SrO layer in STO connects to a (Zn, Ti)O2 layer in BZT, and show that, when three unit cells of BZT are added on top of STO, a two-dimensional electron gas is formed near the interface.

Vanadium-Incorporated CoP2 with Lattice Expansion for Highly Efficient Acidic Overall Water Splitting.

A proton exchange membrane water electrolyzer (PEMWE) in acidic medium is a hopeful scenario for hydrogen production using renewable energy, but the grand challenge lies in substituting noble-metal catalysts. Herein, a robust electrocatalyst of V-CoP2 porous nanowires arranged on a carbon cloth is successfully fabricated by incorporating vanadium into the CoP2 lattice. Structural characterizations and theoretical analysis indicate that lattice expansion of CoP2 caused by V incorporation results in the upshift of the d-band center, which is conducive to hydrogen adsorption for boosting the hydrogen evolution reaction (HER). Besides, V promotes surface reconstruction to generate a thicker Co3 O4 layer with an oxygen vacancy that enhances acid-corrosion resistance and optimizes the adsorption of water and oxygen-containing species, thus improving activity and stability toward the oxygen evolution reaction (OER). Accordingly, it presents a superior acidic overall water splitting activity (1.47 V@10 mA cm-2 ) to Pt-C/CC||RuO2 /CC (1.59 V@10 mA cm-2 ), and remarkable stability. This work proposes a new route to design efficient non-noble metal electrocatalysts for PEMWE.

Oxidation properties and microstructure of a chromium coating on zircaloy-4 fuel cladding material applied by atmospheric plasma spraying

To achieve a full protective coat on welding joints at both ends of zircaloy cladding tubes, we studied the rapid deposition of a thick chromium coating on zircaloy-4 cladding tubes by atmospheric plasma spraying. Microstructure, mechanical properties and high-temperature oxidation tests of chromium coatings were also studied. The initial screening oxidation test of the specimen was carried out at 1100 °C, 1200 °C and 1300 °C in dry air, and the oxidation properties of the specimen were explained. The nanohardness and modulus of the sprayed chromium coating were higher than those of the zircaloy-4 substrate. The nitride phase of Cr2N was formed after the high-temperature oxidation test. After oxidation at 1300 °C, there were multilayer structures: surface Cr2O3, residual Cr coating, thin (Zr,Cr)O2 layer, Cr-Zr layer and zircaloy substrate. There were bubble folds on the surface of the chromium coating and voids in the Cr2O3 layer. The oxidation test showed that the chromium coating can effectively slow the severe oxidation of zircaloy-4 cladding tubes. In summary, an APS-thick chromium coating has the potential to improve the oxidation resistance of zircaloy-4 cladding tubes in light water reactors.

Fingerprints of the cosmic ray driven mechanism of the ozone hole

There is long research interest in electron-induced reactions of halogenated molecules. It has been two decades since the cosmic-ray (CR) driven electron-induced reaction (CRE) mechanism for the ozone hole formation was proposed. The derived CRE equation with the stratospheric equivalent chlorine level and CR intensity as the only two variables has well reproduced the observed data of stratospheric O3 and temperatures over the past 40 years. The CRE predictions of 11-year cyclic variations of the Antarctic O3 hole and associated stratospheric cooling have also been well confirmed. Measured altitude profiles of the ozone and temperatures in Antarctic ozone holes provide convincing fingerprints of the CRE mechanism. A quantitative estimate indicates that the CRE-produced Cl atoms could completely deplete or even overkill the ozone in the CR-peak polar stratospheric region, consistent with the observed altitude profiles of the severest Antarctic ozone holes. After removing the natural CR effect, the hidden recovery in the Antarctic O3 hole since ∼1995 is clearly discovered, while the recovery of O3 loss at mid-latitudes is being delayed by ≥10 years. These results have provided strong evidence of the CRE mechanism. If the CR intensity keeps the current rising trend, the Antarctic O3 hole will return to the 1980 level by ∼2060, while the returning of the O3 layer at mid-latitudes to the 1980 level will largely be delayed or will not even occur by the end of this century. The results strongly indicate that the CRE mechanism must be considered as a key factor in evaluating the O3 hole.

Strain relaxation and dislocation annihilation in compositionally graded α-(AlxGa1-x)2O3 layer for high voltage α-Ga2O3 power devices

α-Ga2O3 of the corundum structure and the large bandgap of 5.3 eV has attracted great interest because it can be grown on a sapphire (α-Al2O3) substrate with the same crystal structure. However, the lattice mismatch (4.3%) and the different thermal expansion coefficients between α-Ga2O3 and the sapphire substrate induce crystalline defects and thermal strain, leading to a high density of threading dislocations and degraded electrical properties of the α-Ga2O3 films grown directly on the substrate. Herein, to circumvents these issues, compositionally graded α-(AlxGa1-x)2O3 layers are adopted to reduce threading dislocations for a high quality of epitaxial α-Ga2O3 films. The evolution of strain relaxation and the inclination of threading dislocations in graded α-(AlxGa1-x)2O3 layers are confirmed by reciprocal space mapping (RSM) and transmission electron microscopy (TEM). Through RSM and TEM studies, we confirmed that compressive strain enhances the inclination of dislocations, and therefore, the dislocations merge and annihilate in the graded α-(AlxGa1-x)2O3 layers. Moreover, owing to dislocations annihilation in the graded α-(AlxGa1-x)2O3 layers, the calculated density of threading dislocations in α-Ga2O3 films with a graded α-(AlxGa1-x)2O3 layer is reduced by 64.9% compared with that of α-Ga2O3 films deposited directly grown on a bare sapphire substrate. Furthermore, a fabricated lateral-structure Schottky diodes reveals enhanced breakdown voltages and forward current density due to the improved crystalline quality using the graded α-(AlxGa1-x)2O3 layer. This study provides an attractive approach for obtaining high-quality epitaxial α-Ga2O3 thin films for high voltage power devices.

Intrinsic Nature of Negative Capacitance in Multidomain Hf0.5Zr0.5O2‐Based Ferroelectric/Dielectric Heterostructures

AbstractHarnessing ferroelectric negative capacitance in Hf0.5Zr0.5O2‐based thin films is promising for applications in nanoscale electronic devices with ultralow power dissipation, due to their ultimate scalability and semiconductor process compatibility. However, so far, it has been unclear if negative capacitance is an intrinsic material property of ferroelectric Hf0.5Zr0.5O2, or if it is an extrinsic effect caused by specific domain configurations and lateral domain wall motion as seen in perovskite ferroelectrics. Here, symmetric and asymmetric Hf0.5Zr0.5O2/Al2O3‐based ferroelectric/dielectric heterostructures are investigated to understand the relationship among depolarization, interfacial charge, domain formation, and negative capacitance. To achieve this, detailed electrical characterization is combined with structural data, analytical modeling, and numerical simulations. The findings suggest that negative capacitance in these ferroelectric/dielectric heterostructures is an intrinsic property of the Hf0.5Zr0.5O2 layer, which has important implications for potential applications. Furthermore, it is experimentally observed that the energy barrier for polarization switching in Hf0.5Zr0.5O2 is largely independent of the domain configuration and layer thickness, which confirms recent predictions by first principles calculations.

Microstructure of high-performance thermochromic ZrO2/V0.984W0.016O2/ZrO2 coating with a low transition temperature (22 °C) prepared on flexible glass

We report on the microstructure of high-performance thermochromic ZrO2/V0.984W0.016O2/ZrO2 coating deposited on ultrathin flexible glass using a pulsed magnetron sputtering without any substrate bias voltage and post-deposition annealing. The coating combines a low transition temperature of 22 °C, an integral luminous transmittance approaching 50% and a modulation of the solar energy transmittance over 10%. The microstructure of the coating was studied mainly by high-resolution transmission electron microscopy and selected-area electron diffraction. The active V0.984W0.016O2 layer, prepared at a relatively low temperature of 330 °C, is ~70 nm thick. It is composed of closely packed vertically aligned single-crystalline W-doped VO2 nanocolumns that directly attach to the bottom and the top ZrO2 antireflection layer. The majority of the VO2 nanocolumns have a height of ~70 nm (equal to the thickness of the layer) and a lateral size of ~15 nm to 40 nm. The nanocolumns are formed predominantly by the high-temperature thermochromic tetragonal VO2(R) phase with only minor presence of the metastable non-thermochromic orthorhombic VO2(P) phase, which might be stabilized by the used low W-doping. An array of amorphous, low-density nanodomains of a size ~2–4 nm originated particularly along the interface between the V0.984W0.016O2 layer and the top ZrO2 layer. The V0.984W0.016O2 layer is well adhered to both ZrO2 layers. The ZrO2 layers, prepared at a very low temperature (<60 °C), consist of the monoclinic and the tetragonal ZrO2 phase. The bottom ZrO2 layer (~180 nm thick) exhibits an adherent and seamless interface with the flexible glass substrate. The top ZrO2 layer (~170 nm thick) is sufficiently compact to provide mechanical protection and environmental stability for the thermochromic coating. The results are important for further improvement of the performance of multilayer thermochromic coatings designed for smart-window applications.

Fabrication and interfacial characterization of Ni-rich thin-film cathodes for stable Li-ion batteries

Ni-rich LiNi0.6Co0.2Mn0.2O2 (NCM) and LiNbO3-protected LiNi0.6Co0.2Mn0.2O2 (NCM) thin-film cathodes have been prepared by radio frequency (RF) magnetron sputtering. Electrochemical investigations show enhanced stability of LiNbO3-protected cathodes compared with bare LiNi0.6Co0.2Mn0.2O2. The interfacial interaction of LiNbO3 and LiNi0.6Co0.2Mn0.2O2 layers has been investigated by XPS depth profiling and demonstrated different cathode electrolyte interface (CEI) film formation processes at the electrodes. The results elaborate on the interaction between LiNbO3 and LiNi0.6Co0.2Mn0.2O2, emphasizing the role of the LiNbO3 layer in improving the cycling performance of Ni-rich cathodes.

Monolayer Support Control and Precise Colloidal Nanocrystals Demonstrate Metal-Support Interactions in Heterogeneous Catalysts.

Electronic and geometric interactions between active and support phases are critical in determining the activity of heterogeneous catalysts, but metal-support interactions are challenging to study. Here, it is demonstrated how the combination of the monolayer-controlled formation using atomic layer deposition (ALD) and colloidal nanocrystal synthesis methods leads to catalysts with sub-nanometer precision of active and support phases, thus allowing for the study of the metal-support interactions in detail. The use of this approach in developing a fundamental understanding of support effects in Pd-catalyzed methane combustion is demonstrated. Uniform Pd nanocrystals are deposited onto Al2 O3 /SiO2 spherical supports prepared with control over morphology and Al2 O3 layer thicknesses ranging from sub-monolayer to a ≈4nm thick uniform coating. Dramatic changes in catalytic activity depending on the coverage and structure of Al2 O3 situated at the Pd/Al2 O3 interface are observed, with even a single monolayer of alumina contributing an order of magnitude increase in reaction rate. By building the Pd/Al2 O3 interface up layer-by-layer and using uniform Pd nanocrystals, this work demonstrates the importance of controlled and tunable materials in determining metal-support interactions and catalyst activity.

Homogeneous versus Inhomogeneous Polarization Switching in PZT Thin Films: Impact of the Structural Quality and Correlation to the Negative Capacitance Effect

Polarization switching in ferroelectric films is exploited in many applications, such as non-volatile memories and negative capacitance field affect transistors. This can be inhomogeneous or homogeneous, depending on if ferroelectric domains are forming or not during the switching process. The relation between the polarization switching, the structural quality of the films and the negative capacitance was not studied in depth. Here, Pb(Zr0.2Ti0.8)O3 (PZT) layers were deposited by pulse laser deposition (PLD) and sol-gel (SG) on single crystal SrTiO3 (STO) and Si substrates, respectively. The structural quality was analyzed by X-ray diffraction and transmission electron microscopy, while the electric properties were investigated by performing hysteresis, dynamic dielectric measurements, and piezo-electric force microscopy analysis. It was found that the PZT layers grown by PLD on SRO/STO substrates are epitaxial while the layers deposited by SG on Pt/Si are polycrystalline. The polarization value decreases as the structure changes from epitaxial to polycrystalline, as well as the magnitude of the leakage current and of the differential negative capacitance, while the switching changes from homogeneous to inhomogeneous. The results are explained by the compensation rate of the depolarization field during the switching process, which is much faster in epitaxial films than in polycrystalline ones.

In-situ constructing nanostructured magnesium ferrite on steel slag for Cr(VI) photoreduction

An innovative method is created for transforming iron-rich RO phase (MgO0.239FeO0.761) on steel slag surface into nanostructured Mg0.04Fe2.96O4 layer. The phase change process is investigated, and it is found that salicylic acid modification and alkaline roasting procedures remarkably increase the specific surface area from 0.46 m2/g (raw steel slag) to 69.5 m2/g (Mg0.04Fe2.96O4), and the generation of Mg0.04Fe2.96O4 enhances the absorption of visible light and Cr(VI) conversion with 2-times increasement than raw steel slag. Surface complexation between H2C2O4 ligands and Fe metal moiety on Mg0.04Fe2.96O4 induces the intramolecular electron transfer under visible light irradiation based on a ligand-to-metal charge transfer mechanism, thus resulting in Cr(VI) photoreduction, and the catalytic efficiency is above 90% for Cr(VI) (40 mg/L) under inherent pH= 5.5 conditions. Moreover, recyclability tests based on magnetic separation show that the photoreactivity is closely related to Mg content of Mg0.04Fe2.96O4 layer where Mg leaching occurs and finally generates cubic spinel configuration Fe3O4. This work highlights the importance of surface functionalization in post-use phases of steel slag in which surface reactivity and application potential can be greatly altered by chemical exposure history and surface transformations. It also provides valuable references for studying the metastable state mechanism of magnesium ferrite photocatalysts.

Structural Properties of Thin ZnO Films Deposited by ALD under O-Rich and Zn-Rich Growth Conditions and Their Relationship with Electrical Parameters.

The structural, optical, and electrical properties of ZnO are intimately intertwined. In the present work, the structural and transport properties of 100 nm thick polycrystalline ZnO films obtained by atomic layer deposition (ALD) at a growth temperature (Tg) of 100–300 °C were investigated. The electrical properties of the films showed a dependence on the substrate (a-Al2O3 or Si (100)) and a high sensitivity to Tg, related to the deviation of the film stoichiometry as demonstrated by the RT-Hall effect. The average crystallite size increased from 20–30 nm for as grown samples to 80–100 nm after rapid thermal annealing, which affects carrier scattering. The ZnO layers deposited on silicon showed lower strain and dislocation density than on sapphire at the same Tg. The calculated half crystallite size (D/2) was higher than the Debye length (LD) for all as grown and annealed ZnO films, except for annealed ZnO/Si films grown within the ALD window (100–200 °C), indicating different homogeneity of charge carrier distribution for annealed ZnO/Si and ZnO/a-Al2O3 layers. For as grown films the hydrogen impurity concentration detected via secondary ion mass spectrometry (SIMS) was 1021 cm−3 and was decreased by two orders of magnitude after annealing, accompanied by a decrease in Urbach energy in the ZnO/a-Al2O3 layers.

Using MoS2/Fe3O4 as Ion-Electron Transduction Layer to Manufacture All-Solid-State Ion-Selective Electrode for Determination of Serum Potassium

As an essential electrolyte for the human body, the potassium ion (K+) plays many physiological roles in living cells, so the rapid and accurate determination of serum K+ is of great significance. In this work, we developed a solid-contact ion-selective electrode (SC-ISE) using MoS2/Fe3O4 composites as the ion-to-electron transducer to determine serum K+. The potential response measurement of MoS2/Fe3O4/K+-ISE shows a Nernst response by a slope of 55.2 ± 0.1 mV/decade and a low detection limit of 6.3 × 10−6 M. The proposed electrode exhibits outstanding resistance to the interference of O2, CO2, light, and water layer formation. Remarkably, it also presents a high performance in potential reproducibility and long-term stability.

Electrical properties of heavily Sn-doped (AlGa)2O3 layers on β-Ga2O3 (010) substrates

We report on the critical layer thickness for (AlGa)2O3 hetero-epitaxial growth on β-Ga2O3 (010) substrates via plasma-assisted molecular-beam epitaxy and on the electrical properties of heavily tin-doped (AlGa)2O3 layers. The aluminum composition in the (AlGa)2O3 layers was reproducibly controlled within 19% by changing aluminum fluxes. We achieved the pseudomorphic growth of the 1050 nm thick (Al0.12Ga0.88)2O3 and 420 nm thick (Al0.15Ga0.85)2O3 layers on β-Ga2O3 (010) substrates. The electron concentration, contact resistivity, and sheet resistance of the (Al0.10Ga0.90)2O3 layer with a tin concentration of 4 × 1019 cm−3 were 1 × 1018 cm−3, 3 × 10−5 Ω cm2, and 9 × 102 Ω/⎕, respectively.

Characteristics of boundary layer ozone and its effect on surface ozone concentration in Shenzhen, China: A case study

In late September 2019, the longest and most extensive ozone (O3) pollution process occurred at Pearl River Delta. Base on the observational data, surface-level O3, vertical distribution characteristics boundary layer O3 as well as its effect on surface-level O3 are thoroughly analyzed. The O3 lidar results showed similar vertical O3 profiles both in pollution episodes and clean periods, from which a high O3 concentration layer between 300 and 500 m and a sub-high O3 concentration layer between 1300 and 1700 m (near the top of the mixing layer) can be found. Besides, the downward O3 transport paths from the high/sub-high O3 concentration layers could be observed along with the boundary layer evolution: At nighttime, large amounts of O3 were effectively stored into the residual layer (RL). Due to the upward development of Mixing layer (ML) in early morning, atmospheric vertical mixing carried the O3 inside the RL down to the surface, which led to a rapid increase in the surface-level O3. The sub-high O3 layer began the downward mixing at noon, and became well-mixed after the boundary layer was fully developed in the afternoon, by which the near surface O3 pollution deteriorated again. Further analysis of the heavy O3 pollution episodes show that, the high O3 concentration inside the RL contributed 54% ± 6% of the surface-level O3 at 9:00 LT and the average contribution of O3 in the sub-high concentration layer to the surface-level O3 at 14:00 LT was 26% ± 9%. Based on the quantitative analysis of the observational data, this paper focus to reveal the importance of the contribution of O3 inside the RL and near the top of the ML to the surface O3.

Bulk O2 formation and Mg displacement explain O-redox in Na0.67Mn0.72Mg0.28O2

Summary O-redox in compounds with Li on the transition-metal layers (TML) has recently been attributed to the formation of molecular O2 on charge, trapped in the lattice. Here, we show that a similar process occurs for P2-Na0.67[Mn0.72Mg0.28]O2, which contains Mg2+ on the TML. The molecular O2 is identified by high-resolution RIXS and quantified by magnetometry, showing that it equates to the charge passed. This O2 is trapped in voids that are formed by Mg2+ out-of-plane displacement and Mn4+ in-plane disordering and is then reduced on discharge associated with a large voltage hysteresis. In contrast to compounds containing Li+ in the TML, in which the honeycomb ordering and the high-voltage plateau are irreversibly lost after the first cycle, in P2-Na0.67[Mn0.72Mg0.28]O2, the plateau reappears partially on the second charge due to the partial reversibility of Mn in-plane and Mg out-of-plane migration and the local reformation of the honeycomb ordering.

Quasi-two-day wave characteristics in the mesopause region from airglow data measured at El Leoncito (31.8°S, 69.3°W)

A statistical study of strong quasi-two-day waves (QTDWs) is carried out from the intensities and rotational temperatures of OH(6–2) and O2b(0–1) emissions measured from the “El Leoncito” Astronomical Complex (31.8°S, 69.3°W) between 2006 and 2020. These emissions correspond to layers centered at 87 km and 95 km altitude, respectively. The period, amplitude and phase of each QTDW are obtained after applying rigorous data and spectral conditions. QTDW is the strongest planetary wave in January and is strong during the other summer months. In the rest of the year, the presence of strong QTDWs is more exceptional. Most QTDWs have periods between 45 and 52 h. In January, the periods are mostly concentrated in the range of 45–48 h, with medians of approximately 46 h, for both emissions. The peak of QTDW amplitudes is also reached in January, with total averages greater than 10 K for temperatures and 36% (45%) for OH (O2) relative intensities. Unlike what happens with the semidiurnal tide, there is no increase of the temperature amplitude with altitude: for January there is rather a slight decrease between the OH and the O2 layer. QTDWs affect airglow intensities more than temperatures, which is reflected in the large Krassovsky's η ratios (with mean vector modulus of 6.14 (±0.15) for OH and 8.08 (±0.11) for O2). In a high percentage of cases, the vertical wavelength is long (λz > 100 km), especially for the O2 layer. However, waves with λz from 20 km were also detected, and with both directions of vertical propagation. The January averages in the documented years (2008–2012, 2014–2015, 2019–2020), indicate the minimum amplitudes (in intensity and temperature) in 2009 and the maximum amplitudes in 2012. For each of the four observed parameters (intensities and temperatures of OH and O2) there is a different day-by-day evolution of the QTDW amplitudes.