We report on the fabrication, at high growth temperature (685°C) of low-pressure metalorganic vapor-phase epitaxy InAs quantum dots (QDs) with GaAs barriers. The 2D–3D transition of the growth mode was observed by both high-resolution X-ray diffraction spectroscopy and photoluminescence (PL) measurement. The QDs observed by TEM show a density distribution 4×10 7 cm −2. This density distribution is also confirmed from the analysis of PL measurements on square mesas (40×40–1×1 μm 2). Furthermore, we show that these QD arrays have been inserted in an AlAs/GaAs planar cavity on which we have measured a record cavity quality factor of 11 900 at 965 nm.